JPS5926998A - Method for epitaxial growth in liquid phase - Google Patents
Method for epitaxial growth in liquid phaseInfo
- Publication number
- JPS5926998A JPS5926998A JP13413682A JP13413682A JPS5926998A JP S5926998 A JPS5926998 A JP S5926998A JP 13413682 A JP13413682 A JP 13413682A JP 13413682 A JP13413682 A JP 13413682A JP S5926998 A JPS5926998 A JP S5926998A
- Authority
- JP
- Japan
- Prior art keywords
- liquid reservoir
- substrate
- solution
- crystal
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/063—Sliding boat system
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
（ａン 発明の技術分野
本発明は液相エピタキシャル成長方法の改良に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to improvements in liquid phase epitaxial growth methods.
（ｂ） 技術の背景
赤外線検知素子等の光電変換素子の形成材料としては、
水銀（Ｈｇ）１を含む化合物半導体結晶、例えば水銀、
カドミウム、テルル（ｋ！ＩｇＩ−ｘＣｄ８Ｔｅ）のよ
うなエネルギーギャップの狭い化合物半導体結晶が用い
られているのは周知である。(b) Background of the technology Materials for forming photoelectric conversion elements such as infrared sensing elements include:
Compound semiconductor crystals containing mercury (Hg) 1, such as mercury,
It is well known that compound semiconductor crystals with narrow energy gaps such as cadmium and tellurium (k!IgI-xCd8Te) are used.
このようなＬｉ１−、（ｄ、Ｔｅの結晶を素子形成上都
合が良いように大面積で、しかも薄層の状態で得るよう
にするには、カドミウムテルル（（支）Ｉｌｌｅ）の基
板を用い、その上に前述したＬｌｇｌ−エＱ１１！Ｔｅ
の結晶層をスライディング法を用いた液相エピタキシャ
ル成長方法で形成している。In order to obtain such Li1-, (d, Te crystals in a large area and in a thin layer for convenience in device formation, a substrate of cadmium telluride ((sub) Ille) is used. , and the above-mentioned Llgl-EQ11!Te
The crystal layer is formed using a liquid phase epitaxial growth method using a sliding method.
（Ｃ） 従来技術と問題点
このような液相エピタキシャル成長の従来の方法につい
°て第１図を用いながら説明する。(C) Prior Art and Problems The conventional method of liquid phase epitaxial growth will be explained with reference to FIG.
図示するように直方体形状のカーボンよりなる支持台ｌ
の凹所２にはカドミウム、テルル（ＱｉＴｅ）よりなる
基板８を埋設し、凹所４にはＱｉＴｅよりなるダミー用
薄板５を埋設している。As shown in the figure, a support l made of rectangular parallelepiped carbon
A substrate 8 made of cadmium and tellurium (QiTe) is buried in the recess 2, and a dummy thin plate 5 made of QiTe is buried in the recess 4.
−万、該支持台１の七をスライドして移動し、カーボン
よりなる直方体形状のスライド部材６には方形の貫通孔
よりなる液だめ７を設け、該液だめ７内には基板３上に
形成すべき結晶層の権１−ｘＣｄ、Ｔｅの材料８を収容
している。- 7 of the support base 1 is moved by sliding, and a rectangular parallelepiped slide member 6 made of carbon is provided with a liquid reservoir 7 consisting of a rectangular through hole, and the liquid reservoir 7 is provided with a liquid reservoir 7 on the substrate 3. It contains materials 8 of Cd and Te for the crystal layer to be formed.
このような支持台１とスライド部材６とからなるエピタ
キシャル成長装置を水素（馬）ガス算囲気の反応管中に
挿入したのち、該反応管を加熱炉にて約５００°Ｃの温
度に加熱する。After the epitaxial growth apparatus consisting of the support stand 1 and the slide member 6 is inserted into a reaction tube surrounded by hydrogen (horse) gas, the reaction tube is heated to a temperature of about 500° C. in a heating furnace.
その後肢だめ７内の材料が溶融して、ｌ”ｇ １−ｘ（
支）、Ｔｅの溶液８が形成された時点でスライド部材６
を矢印入方向に移動させ、液だめ７をＱＩＴｅのタミー
用薄板５上に静置し、液だめ７内の溶Ｍ８をダＥ −用
薄板の成分にて飽和させる。The material in the hindlimb reservoir 7 melts and l”g 1-x(
), at the point when the Te solution 8 is formed, the slide member 6
is moved in the direction of the arrow, the liquid reservoir 7 is placed on the QITe thin plate 5 for Tammy, and the solution M8 in the liquid reservoir 7 is saturated with the components of the thin plate for DaE-.
次いで更にスライド部材６を矢印Ａ方向に移動させ、液
ｔごめ７を基板３上に静置させてから、加熱炉の温度を
所定の温度勾配で低下させて基板３上に１ｆｇｌ−ｘＣ
ｄｘＴｅのエピタキシャル層を成長させるようにしてい
る。Next, the slide member 6 is further moved in the direction of arrow A to leave the liquid tgome 7 still on the substrate 3, and then the temperature of the heating furnace is lowered with a predetermined temperature gradient to deposit 1fgl-xC on the substrate 3.
An epitaxial layer of dxTe is grown.
ところで液だめ７内の溶液８はＴｅを溶媒として（Ｅｄ
Ｊ（ｇが溶質の形で構成されており、液だめの温度を低
下させて基板上にエピタキシャル層を形成する際、Ｃｄ
、 １１ｇが形成されるエピタキシャル層中へ拡散す
る速度が遅く、溶液内にＣｄ、顯の成分が多い過冷却状
態が形成され、その過冷却部分を核として結晶核が溶液
内に発生する。このように結晶核が発生している溶液を
有する液だめ７を基板３上に静置し、加熱炉の温度を低
下させて基板３上’ ”ｇｌ−、Ｑｌ、Ｔ６の結晶層を
形成すると基板３と溶液８の固液界面の近傍に発生した
結晶核が、基板上に形成される結晶層に組成の不均一化
あるいは突起などの異常成長を発生させるといつｔコ問
題点を生じる。By the way, the solution 8 in the liquid reservoir 7 is prepared using Te as a solvent (Ed
J(g) is composed of solute, and when forming an epitaxial layer on the substrate by lowering the temperature of the liquid reservoir, Cd
, 11g is slow to diffuse into the epitaxial layer where it is formed, and a supercooled state is formed in which the solution contains a large amount of Cd and ash, and crystal nuclei are generated in the solution with the supercooled portion serving as a nucleus. When the liquid reservoir 7 containing the solution in which crystal nuclei are generated is placed on the substrate 3, and the temperature of the heating furnace is lowered to form crystal layers of 'gl-, Ql, and T6 on the substrate 3. Problems arise when crystal nuclei generated near the solid-liquid interface between the substrate 3 and the solution 8 cause compositional non-uniformity or abnormal growth such as protrusions in the crystal layer formed on the substrate.
（ｄ） 発明の目的
本発明は上述した欠点を除去し、液だめ内の溶液中に発
生した結晶核が原因となってエピタキシャル成長層の組
成の不均一化あるいはエピタキシャル成長層における突
起等の異常成長を生じさせないようにした新規な液相エ
ピタキシャル成長方法の提供を目的とするものである。(d) Purpose of the Invention The present invention eliminates the above-mentioned drawbacks and prevents non-uniform composition of the epitaxially grown layer or abnormal growth such as protrusions in the epitaxially grown layer due to crystal nuclei generated in the solution in the liquid reservoir. The object of the present invention is to provide a novel liquid phase epitaxial growth method that prevents this from occurring.
（ｅ） 発明の構成
かかる目的を達成するための本発明の液相エピタキシャ
ル成長方法は、基板を埋設する支持台とその上をスライ
ドして移動するスライド部材とよりなる成長装置の該ス
ライド部材に、基板上に形成すべき結晶層の材料の溶液
を収容する液だめを設け、該基板上に液だめを静置した
のち、基板上に結晶層をエピタキシャル成長させる方法
において、前記液だめの溶液内に基板上に形成する結晶
層の材料からなる板状部材を設置し、該板状部材に液だ
め内の溶液で発生する不要な結晶核を析出させながら基
板上にエピタキシャル成長させることを特徴とするもの
である。(e) Structure of the Invention In order to achieve the above object, the liquid phase epitaxial growth method of the present invention includes a growth apparatus including a support base in which a substrate is buried and a slide member that slides on the support base, and a slide member that moves by sliding on the support base. In a method of epitaxially growing a crystal layer on a substrate after providing a liquid reservoir containing a solution of a material for a crystal layer to be formed on a substrate and leaving the liquid reservoir stationary on the substrate, A plate-shaped member made of the material of the crystal layer to be formed on the substrate is installed, and epitaxial growth is performed on the substrate while unnecessary crystal nuclei generated in the solution in the liquid reservoir are precipitated on the plate-shaped member. It is.
げ） 発明の実施例
以下図面を用いながら本発明の一実施例につき詳細に説
明する。(g) Embodiment of the Invention An embodiment of the present invention will be described in detail below with reference to the drawings.
第２図は本発明の液相エピタキシャル成長方法に用いる
装置の断面図で、第３図は該装置の故だめの部分を拡大
した要部の平面図である。FIG. 2 is a sectional view of an apparatus used in the liquid phase epitaxial growth method of the present invention, and FIG. 3 is an enlarged plan view of the main part of the apparatus.
本発明の液相エピタキシャル成長方法が従来と異なる点
は第２図、第８図に示すようにスライド部材１１の液だ
め１２に収容されているＨｇ１゜ＣｄｘＴｅの溶液１３
内に、該溶液と同じ成分のＩ（ｇ ｌ−ｚｃｄ ｘＴｅ
）結晶の材料よりなり厚す２〜３ｍｍ程度の板状部材
１４を複数枚設置している点にある。The difference between the liquid phase epitaxial growth method of the present invention and the conventional method is that, as shown in FIGS.
I(g l-zcd xTe
) A plurality of plate-like members 14 made of crystalline material and having a thickness of about 2 to 3 mm are installed.
このようなＨｇｔ−ｘＣｄｘＴ６よりなる板状部材１４
は第３図に示すようにＬ（ｇｌ−ｘＣｄｘ’Ｉ’ｅの液
だめ１２の上部に内接するようにして所定のピッチで溝
を切削した設置治具１５に差し込むようにして設置し、
該部材１４の底部は支持台１６の上面と接触しないよう
に約５００μｍ程度の間隙を設けておく。そして該スラ
イド部材１１を矢印Ｂ方向にスライドしたとき、ダミー
用薄板１７やＣｋｌ’ｌ’ｅの基板１８に前記部材１４
が接触しないようにしておく。A plate member 14 made of such Hgt-xCdxT6
As shown in FIG. 3, it is installed by being inserted into the installation jig 15 which has grooves cut at a predetermined pitch so as to be inscribed in the upper part of the liquid reservoir 12 of L(gl-xCdx'I'e).
A gap of about 500 μm is provided so that the bottom of the member 14 does not come into contact with the top surface of the support base 16. When the slide member 11 is slid in the direction of arrow B, the member 14 is attached to the dummy thin plate 17 and the Ckl'l'e substrate 18.
Make sure that they do not come in contact with each other.
次にこのようにしｔこスライド部材１１と支持台１６よ
りなる液相エピタキシャル成長装置を用いて、（）ｌｉ
”ｅ ｏ）基板１８上ニＩＱ ｌ−、Ｃｄ ｔＩｌｌｅ
のエピタキシャル層を形成する場合について述べると、
前述しｔこ支持台１６にＯ汀ｅのダミー用薄板１７とエ
ビタキシャル層成長用のＣｄ’ｉ’ｅの基板１８とを埋
設しスライド部材１１の液だめ１２内にＨｇ １−ｘｃ
ｄｘ’ｌ’ｅの材料１３を充填する。Next, using the liquid phase epitaxial growth apparatus consisting of the slide member 11 and the support stand 16 in this way, ()li
"e o) Ni IQ l-, Cd tIlle on the substrate 18
Regarding the case of forming an epitaxial layer,
As described above, the dummy thin plate 17 of O layer and the substrate 18 of Cd'i'e for epitaxial layer growth are buried in the support base 16, and Hg 1-xc is placed in the liquid reservoir 12 of the slide member 11.
Fill with material 13 of dx'l'e.
その後、該エピタキシャル成長装置を水素（鴇）ガス算
囲気の反応管中に挿入し、加熱炉にて反応管を加熱して
顯１−ｘＣｄＸＴｅの材料を溶融する。その後スライド
部材１１を矢印Ｂ方向に移動させダミー用薄板１７上に
液ｔごめ１２を静置したのち、液だめ１２の溶液１３内
にダミー用薄板の成分を飽和させる。Thereafter, the epitaxial growth apparatus is inserted into a reaction tube surrounded by hydrogen gas, and the reaction tube is heated in a heating furnace to melt the 1-xCdXTe material. Thereafter, the slide member 11 is moved in the direction of arrow B to leave the liquid 12 still on the dummy thin plate 17, and then the solution 13 in the liquid reservoir 12 is saturated with the components of the dummy thin plate.
次いでスライド部材１１を更に矢印Ｂ方向に移動させ、
Ｑｉ’ｌ’ｅの基板１８上に液だめ１２を０置してから
加熱炉の温度を所定の温度勾配で低下させて基板１８上
に？ｌ−８ＣｄｘＴｅのエピタキシャル層を成長させる
。Next, the slide member 11 is further moved in the direction of arrow B,
After placing the liquid reservoir 12 on the substrate 18 of Qi'l'e, the temperature of the heating furnace is lowered with a predetermined temperature gradient, and then the liquid reservoir 12 is placed on the substrate 18. Grow an epitaxial layer of l-8CdxTe.
この時１Ｊｇ １−ｘｃ（ｉ ｘＴ６の溶液の温度を低
下させる時に溶液内の拡散速度の遅いＨｇとＣｄとが過
飽和伏態となって残留し、結晶核を形成するようになる
が、この結晶核がＨｇ、−ｘｃｄｘ”ｅの板状部材１４
に発生−るようになる。At this time, when the temperature of the solution of 1Jg 1-xc (i Plate member 14 with core of Hg, -xcdx”e
It begins to occur.
このようにすれば基板１８上に成長するエピタキシャル
結晶１−中に結晶核が入り込まぬようになり高品質のエ
ピタキシャル層が得られるようになる。This prevents crystal nuclei from entering the epitaxial crystal 1- grown on the substrate 18, making it possible to obtain a high quality epitaxial layer.
また、液だめ１２の内壁面にあらかじめ前述した板状部
材をたてかけて、該液だめ内へ贈＋−ｘ（）ｌｉｘ′１
゛ｅ の飽和溶液を流し込んでから該液だめを基板上
に静置してエピタキシャル層を形成する方法においては
、板状部材の成分がＬｌｇ 、 −ｘＣｄ、＋ｌ′ｅの
飽和俗液中へ溶は込まないので、板状部材の材料として
は結晶層と成分の異なるＣｄｌ’ｅの結晶板を用いても
良い。In addition, the above-mentioned plate-like member is placed against the inner wall surface of the liquid reservoir 12 in advance, and the material is placed inside the liquid reservoir +−x()lix′1.
In the method of forming an epitaxial layer by pouring a saturated solution of ゛e and then leaving the liquid reservoir on a substrate, the components of the plate member are dissolved in the saturated solution of Llg, -xCd, +l'e. Since it does not fit in, a Cdl'e crystal plate having a different composition from the crystal layer may be used as the material for the plate member.
（ｇ） 発明の効果
以北述べｔコよう（こ本発明の方法によれば、基板上に
形成されるエピタキシャル層が結晶欠陥の生じない高品
質なものとなる利点を生じる。(g) Effects of the Invention The method of the present invention has the advantage that the epitaxial layer formed on the substrate is of high quality and free of crystal defects.
第１図は従来の液相エピタキシャル成長方法をこ用いる
装置の断面図、第２図、第３図は本発明の液相エピタキ
シャル成長方法に用いる装置の断面図および要部平面図
である。
図において１，１６は支持台、２．４は凹所、３．１８
はＣｄＴｅ基板、５．１７はダミー薄板、６．１１はス
ライド部材、７．１２は故だめ、１３はＬｌｇ １−ｘ
ｃｄＸＴｅの溶１１！、１４は”ｇ ｒ −ｘ（Ｊｄ；
ｌ’（３の板状部材、１５は設置治具、Ａ、Ｂはスライ
ド方向を示す矢印である。
第１図 Ａ
第３図
１：） ７４FIG. 1 is a sectional view of an apparatus using a conventional liquid phase epitaxial growth method, and FIGS. 2 and 3 are a sectional view and a plan view of a main part of an apparatus used for the liquid phase epitaxial growth method of the present invention. In the figure, 1 and 16 are support stands, 2.4 is a recess, and 3.18
is a CdTe substrate, 5.17 is a dummy thin plate, 6.11 is a slide member, 7.12 is a dam, 13 is Llg 1-x
Melting of cdXTe 11! , 14 is “g r −x(Jd;
l' (Plate member 3, 15 is an installation jig, A and B are arrows indicating the sliding direction. Fig. 1 A Fig. 3 1:) 74
Claims (1)
るスライド部材とよりなる成長装置の該スライド部材に
、基板上に形成すべき結晶層の材料の溶液を収容する液
だめを設け、該基板上に液だめを静置したのち、基板上
に結晶層をエピタキシャル成長させる方法において、前
記液だめの溶液内に基板上に形成する結晶層の材料から
なる板状部材を設置し、該板状部材に液だめ内の溶液で
発生する不要な結晶核を析出させながら上記基板上に結
晶層をエピタキシャル成長させることを特徴とオる液相
エピタキシャル成長方法。A growth device comprising a support base in which the substrate is buried and a slide member that slides on the support base is provided with a liquid reservoir containing a solution of the material for the crystal layer to be formed on the substrate. In a method of epitaxially growing a crystal layer on a substrate after a liquid reservoir is placed on a substrate, a plate-shaped member made of the material of the crystal layer to be formed on the substrate is placed in the solution of the liquid reservoir, and the plate-shaped member is placed in the solution of the liquid reservoir. A liquid phase epitaxial growth method characterized by epitaxially growing a crystal layer on the substrate while precipitating unnecessary crystal nuclei generated in a solution in a liquid reservoir onto the member.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13413682A JPS5926998A (en) | 1982-07-30 | 1982-07-30 | Method for epitaxial growth in liquid phase |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13413682A JPS5926998A (en) | 1982-07-30 | 1982-07-30 | Method for epitaxial growth in liquid phase |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5926998A true JPS5926998A (en) | 1984-02-13 |
Family
ID=15121308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13413682A Pending JPS5926998A (en) | 1982-07-30 | 1982-07-30 | Method for epitaxial growth in liquid phase |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5926998A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61105886U (en) * | 1984-12-17 | 1986-07-05 | ||
| JPS6451821U (en) * | 1987-09-29 | 1989-03-30 |
-
1982
- 1982-07-30 JP JP13413682A patent/JPS5926998A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61105886U (en) * | 1984-12-17 | 1986-07-05 | ||
| JPS6451821U (en) * | 1987-09-29 | 1989-03-30 |
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