JPS59217615A - Apparatus for forming amorphous silicon film - Google Patents
Apparatus for forming amorphous silicon filmInfo
- Publication number
- JPS59217615A JPS59217615A JP9029683A JP9029683A JPS59217615A JP S59217615 A JPS59217615 A JP S59217615A JP 9029683 A JP9029683 A JP 9029683A JP 9029683 A JP9029683 A JP 9029683A JP S59217615 A JPS59217615 A JP S59217615A
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- Japan
- Prior art keywords
- gas
- amorphous silicon
- reaction vessel
- film
- reaction chamber
- Prior art date
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Links
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、反応室内にＳｔを含む原料ガスを導入すると
ともに原料ガスを分解することにょシ被成膜体（４電性
基体）上にアモルファスシリコン膜を成膜するアモルフ
ァスシリコン成膜装置の改良に関する。Detailed Description of the Invention [Technical Field of the Invention] The present invention is directed to introducing a raw material gas containing St into a reaction chamber and decomposing the raw material gas to form an amorphous film on a film-forming target (a tetraelectric substrate). The present invention relates to an improvement of an amorphous silicon film forming apparatus for forming a silicon film.
アモルファスシリコン（ａ −Ｓ ｉ ：Ｈ） ｕソノ
耐摩耗性、高感度性、無公害性、耐熱性の面で他のＳｅ
、ＺｎＯ，ＣｄＳ等に比べ優れているため、近年電子写
真用感光体として注目を浴びて来た。Amorphous silicon (a-Si:H) is superior to other Se in terms of wear resistance, high sensitivity, non-pollution, and heat resistance.
, ZnO, CdS, etc., it has recently attracted attention as a photoreceptor for electrophotography.
従来の電子写真用感光体用のアモルファスシリコン成膜
装置は第１図に示す構成となっている。A conventional amorphous silicon film forming apparatus for an electrophotographic photoreceptor has a configuration shown in FIG.
図中１はベースで、このベース１の上面には反応室２を
形成する真空反応容器３が設置されている。さらに、上
記真空反応容器３内には円筒状の対向電極兼用ガス噴出
管４が設けられている。In the figure, 1 is a base, and on the upper surface of this base 1, a vacuum reaction vessel 3 forming a reaction chamber 2 is installed. Furthermore, a cylindrical gas ejection tube 4 which also serves as a counter electrode is provided within the vacuum reaction vessel 3 .
また、上記ベース１上にはモータ５を駆動源とする歯車
機構６を介して所定の速度で回転するターンテーブル７
が設けられ、このターンテーブル７上には受台８を介し
て加熱ヒータ９およびこの加熱ヒータ９に外嵌される状
態で被成膜体としてのＡｔ等の導電性のドラム状基体１
０が載置されるように構成されている。Further, a turntable 7 is mounted on the base 1 and rotates at a predetermined speed via a gear mechanism 6 using a motor 5 as a drive source.
A heater 9 is mounted on the turntable 7 via a pedestal 8, and a conductive drum-shaped substrate 1 such as At, which is a film-forming object, is fitted onto the heater 9.
0 is placed thereon.
また、上記対向電極兼用ガス噴出管４には高周波電源な
どの放電生起用電源Ｚ１が接続された状態となっている
。Further, a discharge generating power source Z1 such as a high frequency power source is connected to the gas ejection tube 4 which also serves as a counter electrode.
また、上記対向電極兼用ガス噴出管４のガス通路４ａの
下端側に対向する部分にはバルブ１２を備えたガス導入
管１３が接続されている。Further, a gas introduction pipe 13 provided with a valve 12 is connected to a portion of the counter electrode gas ejection pipe 4 facing the lower end side of the gas passage 4a.
さらに真空反応容器３内はターンテーブル７に穿たれた
排気孔７ａ・・・およびベース１に穿たれたガス排気口
１ａを介して拡散ポンプ、回転ポンプ等を備えた高真空
排気系（図示しない）が接続されているとともにメカニ
カルブースタ−ポンプ１４ａ１回転ポンプ１４ｂ等の排
気装置１４を備えた大流量排気系１５が接続されている
。Further, the inside of the vacuum reaction vessel 3 is connected to a high vacuum exhaust system (not shown) equipped with a diffusion pump, a rotary pump, etc. via an exhaust hole 7a formed in the turntable 7 and a gas exhaust port 1a formed in the base 1. ) are connected thereto, and a large flow rate exhaust system 15 including an exhaust device 14 such as a mechanical booster pump 14a and a rotary pump 14b is connected.
さらに、大流量排気系１５の排気系路１６中、１
かつ排気装置１４よシも上流側に金網１７を備えた
活性種捕捉用のダストトラップ１８が設けられている。Further, in the exhaust system path 16 of the large flow rate exhaust system 15, 1
Further, a dust trap 18 for trapping active species is provided on the upstream side of the exhaust device 14 and is equipped with a wire mesh 17.
しかして、予め真空反応容器３内を図示しない拡散ポン
プ、回転ポンプ等の高真空排気系（図示せず）を用いて
１０−’ｔｏｒｒ程度の真空に引く。この時ドラム状基
体１０を加熱ヒータ９によシ１５０〜２５０℃の間の所
定の温度に昇温しておく。Therefore, the inside of the vacuum reaction vessel 3 is drawn in advance to a vacuum of about 10-'torr using a high vacuum evacuation system (not shown) such as a diffusion pump or a rotary pump (not shown). At this time, the temperature of the drum-shaped substrate 10 is raised to a predetermined temperature between 150 and 250° C. by the heater 9.
また円周方向の均一成膜、均一温度を目的として、導電
性ドラム状基体１０は、所定の周速で回転運動を行なっ
ている。Further, for the purpose of uniform film formation and uniform temperature in the circumferential direction, the conductive drum-shaped substrate 10 is rotated at a predetermined circumferential speed.
ついで、ガスバルブ１２を開いて原料ガスとしてＳ ｉ
Ｈ４又はＳｉ２Ｈ６等のｓｉを含むガスあるいはＳｔを
含むガスと必要に応じてＢ２Ｈ６又はＰＨ３等のガス混
合ガス、あるいは、ｓｉを含むガスとＣを含むガス、Ｎ
を含むガス、０を含むガスの混合ガスを真空反応容器３
内の対向電極兼用ガス噴出管４のガス通路４ａ内へ導入
する。そして、同時に図示しないパルプ類を切換えて排
気系“を図示しない拡散ポンプ、回転ポンプ等を備えた
高真空排気系（図示せず）からメカニカルグースターポ
ンプ１４ａ、回転ポンプ１４ｂ等の排気装置１４を備え
だ大流量排気系１５に切換える。Then, the gas valve 12 is opened to supply S i as the raw material gas.
A gas containing Si such as H4 or Si2H6 or a gas containing St and a gas mixture such as B2H6 or PH3 as necessary, or a gas containing Si and a gas containing C, N
A mixed gas of a gas containing
The gas is introduced into the gas passage 4a of the gas ejection pipe 4 which also serves as a counter electrode. At the same time, the pulps (not shown) are switched and the exhaust system 14 is changed from a high vacuum exhaust system (not shown) equipped with a diffusion pump, a rotary pump, etc. (not shown) to a mechanical Gooster pump 14a, a rotary pump 14b, etc. Switch to the prepared large-flow exhaust system 15.
つぎに、図示しない流量コントローラによってＳｉＱ含
むガス又はその他のドーピングガスは所定の流値になる
様調整するとともにメカニカルグースターポンプ１４３
に接続されているパルプ（図示せず）の開閉によって、
真空反応容器３内の圧力が０．１〜１ ｔｏｒｒの間の
所定の値になる様設定する。Next, the gas containing SiQ or other doping gas is adjusted to a predetermined flow value by a flow controller (not shown), and the mechanical Gooster pump 143
By opening and closing the pulp (not shown) connected to the
The pressure inside the vacuum reaction vessel 3 is set to a predetermined value between 0.1 and 1 torr.
一方、対向電極兼用ガス噴出管４のガス通路４ａ内に導
入されたガスは対向電極兼用ガス噴出管４の内周面側に
形成されたガス噴出口４ｂ・・・よりト９ラム状基体ｌ
Ｏに向って噴き出される。On the other hand, the gas introduced into the gas passage 4a of the gas ejection tube 4 that also serves as a counter electrode is transferred from the gas outlet 4b formed on the inner peripheral surface side of the gas ejection tube 4 that also serves as a counter electrode.
It is ejected towards O.
そして、とＱのち高周波電源などの放電生起用電源１ノ
から周波数１３．５６ Ｗ（ｚの高周波電力をｉｏｗ−
ＩＫＷＯ間の所定の値で対向電極兼用ガス噴出管４に印
刀ｎされ、ドラム状基体１０と対向電極兼用ガス噴出管
４の間にグロー放電を生起させる。Then, after Q, the frequency of 13.56 W (high frequency power of z is iow-
A predetermined value between IKWO is applied to the gas ejection tube 4 that also serves as a counter electrode, and a glow discharge is generated between the drum-shaped base 10 and the gas ejection tube 4 that also serves as a counter electrode.
対向電極兼用ガス噴出管４は絶縁リング１９によって電
気的に絶縁されていて、導電性ドラム状基体１０及び反
応容器３等は接地されている。The gas ejection tube 4 which also serves as a counter electrode is electrically insulated by an insulating ring 19, and the conductive drum-shaped substrate 10, reaction vessel 3, etc. are grounded.
しかして、Ｓｌを含むガス又はＳｔを含むガスとの混合
ガスのプラズマを生起し、ドラム状基体１０上にアモル
ファスシリコン（ａ−８１：Ｈ）の堆積が開始する。Thus, a plasma of a gas containing Sl or a mixed gas with a gas containing St is generated, and amorphous silicon (a-81:H) starts to be deposited on the drum-shaped substrate 10.
なお、この時成膜に寄与しなかったｓｉを含むガス又は
その他のガスのラジカルは、図示しないメカニカルブー
スターポンプ、回転ポンプ、を備えた大流量排気系１５
を介して排出されたのち燃焼塔、水スクラバーを通過の
後、無害化されて大気中へ廃気される。Note that the radicals of the gas containing Si or other gases that did not contribute to film formation at this time are removed by a large-flow exhaust system 15 equipped with a mechanical booster pump and a rotary pump (not shown).
After passing through a combustion tower and a water scrubber, it is rendered harmless and discharged into the atmosphere.
このような成膜方式でａ −Ｓｉ ：Ｈ感光体の成膜を
行なう場合、成膜中にＳｔを含むガスのグロー放電分解
によって生成した活性種の気相中での反応はさけられず
、粉末状のａ−８ｔ二Ｈが生成する。When forming an a-Si:H photoreceptor using such a film forming method, reactions in the gas phase of active species generated by glow discharge decomposition of gas containing St during film formation cannot be avoided. Powdered a-8t2H is produced.
ａ −８１：Ｈ感光体ドラムの製造後に、真空反応容器
３中からこれらの粉末状ａ −Ｓｔ ：Ｈを除去するこ
となしに、次のａ −Ｓｉ ：Ｈ感光体ドラムの製造工
程を開始すると、真空反応容器３内を減圧する時に、粉
末状ａ −Ｓｉ ：Ｈが真空反応容器３中に舞い上がり
、導電性ドラム状基体表面に付着する。After manufacturing the a-81:H photoreceptor drum, if the next manufacturing process of the a-Si:H photoreceptor drum is started without removing these powdered a-St:H from the vacuum reaction vessel 3. When the pressure inside the vacuum reaction vessel 3 is reduced, powdered a-Si:H flies up into the vacuum reaction vessel 3 and adheres to the surface of the conductive drum-shaped substrate.
この粉末状ａ−８ｔ二Ｈの付着は、ａ −Ｓｉ ：Ｈ感
光体膜のピンホールの原因になシ、このようなａ−８ｔ
：Ｈ感光体を使用した電子写真装置による被写工程を行
うと、ピンホール部分にはコロナ放電による電荷の蓄積
がされず、画像形成が行なわれないいわゆる白抜けが起
こる。This adhesion of powdered a-8t2H is not the cause of pinholes in the a-Si:H photoreceptor film.
When a photographing process is performed using an electrophotographic apparatus using a :H photoreceptor, charge is not accumulated in the pinhole portion due to corona discharge, and so-called white spots occur in which no image is formed.
またこのような成膜方式でａ −Ｓｉ ：Ｈ感光体の成
膜を行なう場合、ａ−８ｔ：Ｈ膜は導電性ドラム状基体
１０の表面だけではなく、対向電極兼用ガス噴出管４の
表面にも堆積する。この対向電極兼用ガス噴出管４に堆
積したａ −Ｓｔ ：Ｈを除去することなしに次のａ−
８１：Ｈ感光体ドラムの・？ 製造工程を開始す
ると、ａ−８ｔ二Ｈ感光体の成膜中に、対向電極兼用ガ
ス噴出管４に堆積したａ −Ｓｉ ：Ｈが剥離し、導電
性ドラム状基体１０上に付着する。Furthermore, when forming an a-Si:H photoreceptor using such a film-forming method, the a-8t:H film is applied not only to the surface of the conductive drum-shaped substrate 10 but also to the surface of the gas jet tube 4 which also serves as a counter electrode. It also accumulates. The next a-
81: H photoconductor drum? When the manufacturing process is started, a-Si:H deposited on the counter electrode-cum-gas ejection tube 4 is peeled off and adhered to the conductive drum-shaped substrate 10 during film formation of the a-8T2H photoreceptor.
この付着も粉末状ａ −Ｓｔ ：Ｈの付着と同様にａ−
８ｉ：Ｈ感光体膜のピンホールを作り、白抜けの原因と
なるといった問題があった。This adhesion is similar to the adhesion of powdered a-St:H.
There was a problem that pinholes were created in the 8i:H photoreceptor film, causing white spots.
本発明は以上の様な不具合点を改良するためになされた
もので、特性の良好な、たとえば電子写真用のアモルフ
ァスシリコン感光体ドラムを効率良く、連続的に製造す
るだめの新規なアモルファスシリコン成膜装置を提供す
る事を目的とする。The present invention has been made in order to improve the above-mentioned disadvantages, and is a novel amorphous silicon material for efficiently and continuously producing amorphous silicon photoreceptor drums with good characteristics, for example, for use in electrophotography. The purpose is to provide membrane equipment.
本発明は、かかる目的を達成するために、反応室内にＳ
ｔを含む原料ガスを導入するとともに電極に電圧を印加
してこの原料ガスを分解することによシ加熱ヒータによ
り加熱された被成膜体上にアモルファスシリコン膜を成
膜するアモルファスシリコン成膜装置において、上記電
極および加熱ヒータを反応室内に対して着脱自在な構成
としたものである。In order to achieve this object, the present invention provides S
An amorphous silicon film forming apparatus that forms an amorphous silicon film on a film-forming object heated by a heater by introducing a raw material gas containing t and applying a voltage to an electrode to decompose the raw material gas. In this method, the electrode and the heater are configured to be detachable from the inside of the reaction chamber.
以下、本発明を第２図および第３図に示す一実施例を参
照して説明する。なお、前述の従来例と同一部分は同一
の符号を付して説明を省略する。図中３′は真空反応容
器であ）、この真空反応容器３′はシール部材としての
Ｏす／グ２０を境として環状の下部材３ａ’と有底筒状
の上部材３ｂとに２分割された構成となっていて、必要
に応じて上部材３ｂ’を取外すことができるようになっ
ている。The present invention will be described below with reference to an embodiment shown in FIGS. 2 and 3. Note that the same parts as those in the conventional example described above are given the same reference numerals, and the description thereof will be omitted. In the figure, 3' is a vacuum reaction vessel), and this vacuum reaction vessel 3' is divided into two parts, an annular lower member 3a' and a bottomed cylindrical upper member 3b, with an oxygen gas/glue 20 serving as a sealing member as a boundary. The upper member 3b' can be removed if necessary.
まだ、第３図に示すように対向電極兼用ガス噴出管４、
加熱ヒータ９、受台８、ターンチーグル７等の内部ユニ
ット２４は、反応室２内に対して着脱自在な構成となっ
ている。As shown in FIG.
The internal unit 24, such as the heater 9, the pedestal 8, and the turntable 7, is configured to be detachable from the inside of the reaction chamber 2.
しかして、成膜時においては、まず、被成膜体である導
電性ドラム状基体１０を受台８上にセットしたのち、対
向電極兼用ガス噴出管４の下端周縁部を絶縁リング１９
′の切欠段部１９ａ′に嵌合させるとともにターンテー
ブル７の歯部１ｂにモータ５によって駆動される歯車２
を噛合せる。ついで、対向電極兼用ガス噴出管４のガス
取入口４Ｃとガス導入管１３とを接続ナツト２２を介し
て接続する。Therefore, during film formation, first, the conductive drum-shaped substrate 10, which is the object to be film-formed, is set on the pedestal 8, and then the lower end peripheral portion of the gas jet tube 4 which also serves as a counter electrode is connected to the insulating ring 19.
A gear 2 that is fitted into the notch step 19a' of the turntable 7 and driven by the motor 5 is fitted onto the toothed portion 1b of the turntable 7.
mesh. Next, the gas intake port 4C of the gas ejection pipe 4 which also serves as a counter electrode and the gas introduction pipe 13 are connected via the connecting nut 22.
つぎに、真空反応容器３′の上部材３ｂ’を下部材３ａ
’上に載置し、第２図に示す状態とする。Next, the upper member 3b' of the vacuum reaction vessel 3' is replaced with the lower member 3a.
' Place it on top of the holder and set it in the state shown in Fig. 2.
そして、前述の従来例で説明したときと同様の手順によ
シ導電性ドラム状基体１０上にａ−８ｔ：Ｈ膜を形成さ
せる。Then, an a-8t:H film is formed on the conductive drum-shaped substrate 10 by the same procedure as described in the prior art example.
導電性ドラム状基体１０上にａ −Ｓｉ ：Ｈ膜が５μ
ｍ〜２５μｍ堆積した後でガス導入管１３のパルプ１２
を閉じてガスの導入を停止し、図示しないＮ２ガス導入
部よシＮ２ガスを導入し真空反応容器３′内の圧力を１
気圧にもどじ、０リング部２０で真空反応容器３′上部
材３ｂ’を分解し、第３図に示すように内部ユニット２
４を取シ出すＯ
続いて、内部ユニット２４からａ −Ｓｌ ：Ｈが堆積
された感光体ドラムＩＯを取シはずした後、対向電極兼
用ガス噴出管４０表面に堆積したａ −Ｓｔ ：Ｈを除
去し、また真空反応容器３′内の粉末状ａ−８ｔ ：Ｈ
を除去、清掃する。A 5 μm a-Si:H film is formed on the conductive drum-shaped substrate 10.
Pulp 12 of gas introduction pipe 13 after m ~ 25 μm deposit
to stop the introduction of gas, and introduce N2 gas through the N2 gas introduction port (not shown) to reduce the pressure inside the vacuum reaction vessel 3' to 1.
After returning to atmospheric pressure, disassemble the upper member 3b' of the vacuum reaction vessel 3' using the O-ring part 20, and remove the internal unit 2 as shown in FIG.
Next, after removing the photoreceptor drum IO on which a-Sl:H was deposited from the internal unit 24, the a-St:H deposited on the surface of the gas ejection tube 40 which also serves as a counter electrode is removed. The powdered a-8t in the vacuum reaction vessel 3' was removed: H
Remove and clean.
真空反応容器３′と、内部ユニット２４を分離すること
により対向電極兼用ガス噴出管４の表面に付着したａ
−Ｓｔ ：Ｈ膜と、反応容器３′内で生成した粉末状ａ
−Ｓｔ ：Ｈの除去が短時間に効率よく完全に行える
ので、−ンホールのない良質の感光体を得ることができ
る。By separating the vacuum reaction vessel 3' and the internal unit 24, a deposited on the surface of the gas ejection tube 4 that also serves as a counter electrode is removed.
-St: H film and powder a generated in the reaction vessel 3'
Since the removal of -St:H can be carried out efficiently and completely in a short time, a high-quality photoreceptor without -holes can be obtained.
内部ユニット２４を複数個用いることによシ、真空反応
容器３′内に生成した粉末状ａ−８ｔ：Ｈの除去は短時
間に容易に行なえるのでメインテナンス時間を必要とせ
ずに、連続的にａ−８ｔ：Ｈ感光体ドラムを製造するこ
とができ、単位時間当シの生産量が増加することになる
。By using a plurality of internal units 24, the powdered a-8t:H generated in the vacuum reaction vessel 3' can be easily removed in a short period of time, so that it can be removed continuously without requiring maintenance time. a-8t:H photoreceptor drums can be manufactured, and the production amount per unit time will increase.
なお、本発明は上記実施例に限るものでない。Note that the present invention is not limited to the above embodiments.
すなわち、電子写真感光体の成膜用に適用したものにつ
いて説明しだが、これに限らず、たとえば光電変換部材
、太陽電池、薄膜トランジス、ｉ タ等の成膜用
に適用してもよいことは勿論である。That is, although the description has been given of the method applied to the film formation of electrophotographic photoreceptors, the present invention is not limited to this, and may be applied to the film formation of photoelectric conversion members, solar cells, thin film transistors, i-ta, etc. Of course.
その他、本発明は本発明の要旨を変えない範囲で種々変
形実施可能なことは勿論である。In addition, it goes without saying that the present invention can be modified in various ways without departing from the gist of the invention.
本発明は、以上説明したように、反応室内にＳｉを含む
原料ガスを導入するとともに電極に電圧を印加してこの
原料ガスを分解することによシ加熱ヒータによシ加熱さ
れた被成膜体上にアモルファスシリコンＦＩＮ 構成Ｆ
Ａ スルフ モル７アスシリコン成膜装置において、上
記電極および加熱ヒータを反応室内に対して着脱自在な
構成としたものである。As explained above, the present invention introduces a raw material gas containing Si into a reaction chamber and decomposes this raw material gas by applying a voltage to an electrode. Amorphous silicon FIN configuration F on the body
A sulfur mole 7 as silicon film forming apparatus is configured such that the electrode and the heater can be attached to and detached from the reaction chamber.
したがって、特性の良好なたとえば電子写真用のアモル
ファスシリコン感光体を効率良く、連続的に製造するの
に適したアモルファスシリコン成膜装置を提供できると
いった効果を奏する。Therefore, it is possible to provide an amorphous silicon film forming apparatus suitable for efficiently and continuously manufacturing an amorphous silicon photoreceptor for electrophotography, which has good characteristics, for example, for electrophotography.
第１図は従来装置の概略的縦断側面図、第２図は本発明
の一実施例を示す概略的縦断側面図、第３図は同じく、
分解状態を示す概略的な縦断側面図である。
３′・・・真空反応容器、２・・・反応室、４・・・対
向電極兼用ガス噴出管、９・・・加熱ヒータ、１０・・
・被成膜体。FIG. 1 is a schematic longitudinal side view of a conventional device, FIG. 2 is a schematic longitudinal side view showing an embodiment of the present invention, and FIG. 3 is a schematic longitudinal side view of a conventional device.
FIG. 3 is a schematic vertical side view showing a disassembled state. 3'... Vacuum reaction vessel, 2... Reaction chamber, 4... Gas ejection tube that also serves as a counter electrode, 9... Heater, 10...
・Object to be coated.
Claims (1)
に電極に電圧を印加してこの原料ガスを分解することに
よυ加熱ヒータにより加熱された被成膜体上にアモルフ
ァスシリコン膜を成膜するアモルファスシリコン成膜装
置において、上記電極および加熱ヒータを反応室内に対
して着脱自在な構成としたことを特徴とするアモルファ
スシリコン成Ｍ装Ｒ０ （２）被成膜体が電子写真用感光体の基体であることを
特徴とする特許請求の範囲第１項記載のアモルファスシ
リコン成膜装置。[Claims] (Li) By introducing a raw material gas containing St into a reaction chamber and decomposing this raw material gas by applying a voltage to an electrode, an amorphous film is formed on a film-forming object heated by a υ heating heater. An amorphous silicon deposition apparatus R0 for depositing a silicon film, characterized in that the electrode and the heater are configured to be detachable from the reaction chamber. (2) The object to be deposited is an electron 2. The amorphous silicon film forming apparatus according to claim 1, wherein the amorphous silicon film forming apparatus is a substrate of a photographic photoreceptor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9029683A JPS59217615A (en) | 1983-05-23 | 1983-05-23 | Apparatus for forming amorphous silicon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9029683A JPS59217615A (en) | 1983-05-23 | 1983-05-23 | Apparatus for forming amorphous silicon film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59217615A true JPS59217615A (en) | 1984-12-07 |
| JPH0520502B2 JPH0520502B2 (en) | 1993-03-19 |
Family
ID=13994569
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9029683A Granted JPS59217615A (en) | 1983-05-23 | 1983-05-23 | Apparatus for forming amorphous silicon film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59217615A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62218570A (en) * | 1986-03-20 | 1987-09-25 | Canon Inc | Apparatus for producing deposited film |
| US11377731B2 (en) | 2017-12-22 | 2022-07-05 | Murata Manufacturing Co., Ltd. | Film-forming device |
| US11891692B2 (en) | 2017-12-22 | 2024-02-06 | Murata Manufacturing Co., Ltd. | Film-forming device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57192258A (en) * | 1981-05-19 | 1982-11-26 | Oki Electric Ind Co Ltd | Film forming apparatus using glow discharge |
| JPS5953672A (en) * | 1982-09-21 | 1984-03-28 | Canon Inc | Plasma cvd apparatus |
-
1983
- 1983-05-23 JP JP9029683A patent/JPS59217615A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57192258A (en) * | 1981-05-19 | 1982-11-26 | Oki Electric Ind Co Ltd | Film forming apparatus using glow discharge |
| JPS5953672A (en) * | 1982-09-21 | 1984-03-28 | Canon Inc | Plasma cvd apparatus |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62218570A (en) * | 1986-03-20 | 1987-09-25 | Canon Inc | Apparatus for producing deposited film |
| US11377731B2 (en) | 2017-12-22 | 2022-07-05 | Murata Manufacturing Co., Ltd. | Film-forming device |
| US11891692B2 (en) | 2017-12-22 | 2024-02-06 | Murata Manufacturing Co., Ltd. | Film-forming device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0520502B2 (en) | 1993-03-19 |
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