JPS59121890A - Ceramic and metal bond - Google Patents

Ceramic and metal bond

Info

Publication number
JPS59121890A
JPS59121890A JP22722182A JP22722182A JPS59121890A JP S59121890 A JPS59121890 A JP S59121890A JP 22722182 A JP22722182 A JP 22722182A JP 22722182 A JP22722182 A JP 22722182A JP S59121890 A JPS59121890 A JP S59121890A
Authority
JP
Japan
Prior art keywords
metal
ceramic
plate
metal plate
component mounting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22722182A
Other languages
Japanese (ja)
Other versions
JPH0351119B2 (en
Inventor
水野谷　信幸
小浜　一
杉浦　康之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP22722182A priority Critical patent/JPS59121890A/en
Publication of JPS59121890A publication Critical patent/JPS59121890A/en
Publication of JPH0351119B2 publication Critical patent/JPH0351119B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal

Landscapes

  • Pressure Welding/Diffusion-Bonding (AREA)
  • Laminated Bodies (AREA)
  • Ceramic Products (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 ［発明の技術分野］ 本発明は、ジャイアントトランジスターモジュール用基
板やスイッチング電源モジュール用基板などの半導体モ
ジュール用基板等として使用される、反りのないセラミ
ックスと金属との接合体に関する。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a bonded body of ceramic and metal that does not warp and is used as a substrate for semiconductor modules such as a substrate for a giant transistor module or a substrate for a switching power supply module. Regarding.

［発明の技術的背景とその問題点］ 近年、セラミック板に銅等の金属板を接合させた半導体
モジュール用基板が知られている。[Technical background of the invention and its problems] In recent years, semiconductor module substrates in which a metal plate such as copper is bonded to a ceramic plate have been known.

このようなセラミックスと金属との接合体の製造は従来
、セラミック板をメタライズ処理することにより行われ
ていたが、近年、この方法に代ってセラミック板に金属
板を接触させ、加熱して直接セラミック板と金属板とを
接合する方法が検討されるようになってきている。Conventionally, manufacturing of such a bonded body of ceramic and metal was carried out by metallizing a ceramic plate, but in recent years, this method has been replaced by a method in which a metal plate is brought into contact with a ceramic plate and heated directly. A method of joining a ceramic plate and a metal plate is being studied.

しかしながら、この方法ではセラミック板の片面のみに
金属板を接合させると反りが生じたり、また接合させる
金属板の板厚が厚いとセラミック板が割れたりするとい
う問題があった。However, this method has the problem that warping occurs when a metal plate is bonded to only one side of a ceramic plate, and that the ceramic plate may crack if the metal plate to be bonded is thick.

ま、た、半導体モジュール用基板として使用する場合、
部品搭載の半田付けの際に基板に反りが生ずるという問
題もあった。Also, when used as a substrate for semiconductor modules,
There was also the problem that the board would warp when soldering the components.

［発明の目的］ 本発明はこのような問題を解消するためなされたもので
、部品搭載側のための半田付けの際に基板の反りや割れ
等がなく、また放熱性や耐電圧特性の改善された半導体
モジュール用基板として有用なセラミックスと金属との
接合体を提供することを目的とする。[Purpose of the Invention] The present invention has been made to solve these problems, and eliminates warping or cracking of the board during soldering on the component mounting side, and improves heat dissipation and withstand voltage characteristics. The present invention aims to provide a ceramic-metal bonded body useful as a semiconductor module substrate.

［発明の概要］ すなわち本発明のセラミックスと金属との接合体は、セ
ラミック板の両面に、セラミック板の板厚より薄い板厚
の金属板を接触配置させた状態で加熱し接合させてなる
ことを特徴とする。[Summary of the Invention] That is, the ceramic-metal bonded body of the present invention is obtained by heating and bonding metal plates having a thickness thinner than that of the ceramic plate in contact with both sides of the ceramic plate. It is characterized by

［発明の実施例］ 次に本発明の実施例について説明する。[Embodiments of the invention] Next, examples of the present invention will be described.

第１図は本発明の一実施例の断面図、第２図（ａ　）は
第１図の上面図、第２図（ｂ）は第１図の底面図である
。1 is a sectional view of an embodiment of the present invention, FIG. 2(a) is a top view of FIG. 1, and FIG. 2(b) is a bottom view of FIG. 1.

図において符号１は板厚Ｔが約０．５〜１．０鮨のアル
ミナ、窒化アルミニウム等のセラミック板であり、その
セラミック板１の両面に板厚ｔ１、ｔ２の銅、アルミニ
ウム等の金属板２ａ、２ｂが配置され、加熱により接合
されている。In the figure, reference numeral 1 is a ceramic plate made of alumina, aluminum nitride, etc. with a plate thickness T of about 0.5 to 1.0, and metal plates such as copper or aluminum with plate thicknesses t1 and t2 are on both sides of the ceramic plate 1. 2a and 2b are arranged and joined by heating.

しかして、本発明においてはセラミック板の板厚Ｔが金
属板２ａ、２ｂの板厚ｔ１、ｔ２より大きく、また金属
板のうち板厚の厚い方に部品３を搭載するのが好ましい
。セラミック板の板厚を金属板の板厚より厚くした理由
は、セラミック板の板厚を薄くするとセラミック板にク
ランクが生じることによる。また部品搭載側の金属板の
板厚を他方の金属板の板厚より厚くするのは部品搭載側
の金属板の板厚が薄いと半田付けの際に反りが生ずる理
由による。Therefore, in the present invention, it is preferable that the thickness T of the ceramic plate is larger than the thicknesses t1 and t2 of the metal plates 2a and 2b, and that the component 3 is mounted on the thicker metal plate. The reason why the thickness of the ceramic plate is made thicker than that of the metal plate is that if the thickness of the ceramic plate is made thinner, a crank will occur in the ceramic plate. The reason why the metal plate on the component mounting side is made thicker than the other metal plate is because if the metal plate on the component mounting side is thin, warping occurs during soldering.

さらにまた、反りを防止するために、部品搭載側の金属
板すなわちパターンの形成された金属板２ａの面積が第
２図（ａ　）、（ｂ）に見られるように、もう一方の金
属板２ｂの面積の５０％以上とし、またこのもう一方の
金属板２ｂにスリット４を形成するのが望ましい。また
部品搭載側の金属板において、部品搭載部分を伯の部分
より厚くすれば熱伝導が良くなり、熱抵抗が小さくなる
ので好ましい。Furthermore, in order to prevent warping, the area of the metal plate 2a on the component mounting side, that is, the metal plate 2a on which the pattern is formed, is larger than that of the other metal plate 2b, as shown in FIGS. 2(a) and 2(b). It is desirable that the slit 4 be at least 50% of the area of the other metal plate 2b. In addition, in the metal plate on the component mounting side, it is preferable to make the component mounting part thicker than the squared part because heat conduction will be improved and thermal resistance will be reduced.

さらにまた、耐電圧特性を改善するために、部品搭載側
の金属板のかどに第２図（ａ　）に示すように、アール
をつけるのが望ましい。アールはＯ９１寵アール以上が
好ましい。また、−置局板表面の結晶粒の大きざを１０
〜１０００μｍすなわち表面の凹凸を５〜１５μ籍にす
れば粒界が少なくなり、電気抵抗が小さくなるので好ま
しい。Furthermore, in order to improve the withstand voltage characteristics, it is desirable to round the corners of the metal plate on the component mounting side, as shown in FIG. 2(a). The radius is preferably O91 radius or higher. Also, - the size of the crystal grains on the surface of the station board is 10
-1000 .mu.m, that is, it is preferable to make the surface unevenness 5 to 15 .mu.m, since this reduces the number of grain boundaries and reduces the electrical resistance.

なおセラミック板１と金属板２ａおよび２ｂとの接合は
、例えば次のようにして行なう。Note that the ceramic plate 1 and the metal plates 2a and 2b are bonded, for example, as follows.

すなわち、セラミック板１の両面に金属板、例えば酸素
を１００〜２０００１］Ｄｍ含有する銅板あるいは表面
を酸化処理された銅板を配置し、不活性ガス雰囲気、例
えば窒素ガス中で１０６５〜１０８３℃で加熱させる。That is, a metal plate, for example, a copper plate containing 100 to 20,001 Dm of oxygen, or a copper plate whose surface has been oxidized, is placed on both sides of the ceramic plate 1, and heated at 1065 to 1083°C in an inert gas atmosphere, for example, nitrogen gas. let

あるいは耐水を含有しないあるいは酸化処理されていな
い銅板を使用する場合は、酸素を０．０３〜０．１ｖｏ
１％を含むガス雰囲気中で加熱させることにより行なう
。Alternatively, when using a copper plate that does not contain water resistance or has not been oxidized, add 0.03 to 0.1 vo of oxygen.
This is carried out by heating in a gas atmosphere containing 1%.

「発明の効果］ このように形成されたセラミックスと金属との接合体は
、セラミック板にクラックが生じることがなく、また反
りも生じることがない。さらにまた、部品搭載のための
半田付（ブの際に反りが生じないので、半導体モジュー
ル用基板として有効である。"Effects of the Invention" The bonded body of ceramic and metal formed in this way does not cause cracks or warpage in the ceramic plate.Furthermore, it is difficult to solder (bracket) for mounting components. Since no warping occurs during the process, it is effective as a substrate for semiconductor modules.

また、セラミック板の裏面にも金属板が形成されている
ので放熱性に優れ、特にセラミック板に窒化アルミニウ
ムを使用した場合は放熱性にも優れたものとなるＰIn addition, since a metal plate is formed on the back side of the ceramic plate, it has excellent heat dissipation. Especially when aluminum nitride is used for the ceramic plate, it has excellent heat dissipation.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の一実施例を示す断面図、第２図（ａ　
）は第１図の上面図、第２図（ｂ　）は第１図の底面図
である。 １・・・・・・・・・・・・セラミック板２ａ　、２ｂ
・・・金属板 ３・・・・・・・・・・・・部　品 代理人弁理士　　　則　近　憲　佑 （ばか１名） 第１図 第？図FIG. 1 is a sectional view showing one embodiment of the present invention, and FIG.
) is a top view of FIG. 1, and FIG. 2(b) is a bottom view of FIG. 1. 1... Ceramic plates 2a, 2b
・・・Metal plate 3・・・・・・・・・Parts agent Patent attorney Noriyuki Chika (1 idiot) Figure 1 No.? figure

Claims (1)

【特許請求の範囲】 （１）セラミック板の両面に、セラミック板の板厚より
薄い板厚の金属板を接触配置させた状態で加熱し接合さ
せてなることを特徴とするセラミックスと金属との接合
体。 （２）セラミックスと金属との接合体は、半導体モジュ
ール用基板である特許請求の範囲第１項記載のセラミッ
クスと金属との接合体。 （３）セラミック板の両面に接合させる金属板の板厚を
異なるようにし、板厚の厚い方の金属板上に部品を搭載
する特許請求の範囲第２項記載のセラミックスと金属と
の接合体。 （４）部品搭載側の金属板の面積がもう一方の金属板の
面積の５０％以上である特許請求の範囲第３項記載のセ
ラミックスと金属との接合体。 （５〉部品搭載側でない金属板にはスリットが形成され
ている第３項また第４項記載のセラミックスと金属との
接合体。 （６）部品搭載側の金属板において、部品搭載部分が他
の部分より厚い特許請求の範囲第３項〜第５項のいずれ
か１項記載のセラミックスと金属との接合体。 （７）部品搭載側の金属板のかどにはアールがつけられ
ている特許請求の範囲第２項〜第６項記載のいずれか１
項記載のセラミックスと金属との接合体。 （８）金属板表面の結晶粒の大きざが１０〜１０００μ
ｍである特許請求の範囲第１項〜第７項のいずれか１項
記載のセラミックスと金属との接合体。[Claims] (1) A combination of ceramic and metal, characterized in that the metal plates having a thickness thinner than that of the ceramic plate are placed in contact with each other on both sides of the ceramic plate and then heated and bonded. zygote. (2) The joined body of ceramic and metal according to claim 1, wherein the joined body of ceramic and metal is a substrate for a semiconductor module. (3) A joined body of ceramic and metal according to claim 2, in which the metal plates bonded to both sides of the ceramic plate have different thicknesses, and the component is mounted on the thicker metal plate. . (4) The ceramic-metal bonded body according to claim 3, wherein the area of the metal plate on the component mounting side is 50% or more of the area of the other metal plate. (5) A joined body of ceramic and metal according to item 3 or 4, in which a slit is formed in the metal plate that is not on the component mounting side. (6) In the metal plate on the component mounting side, the component mounting part is A joined body of ceramic and metal according to any one of claims 3 to 5, which is thicker than the part of the metal plate. (7) A patent in which the edges of the metal plate on the component mounting side are rounded. Any one of claims 2 to 6
A joined body of ceramics and metal as described in Section 1. (8) The size of the crystal grains on the surface of the metal plate is 10 to 1000μ
A joined body of ceramic and metal according to any one of claims 1 to 7, which is m.
JP22722182A 1982-12-28 1982-12-28 Ceramic and metal bond Granted JPS59121890A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22722182A JPS59121890A (en) 1982-12-28 1982-12-28 Ceramic and metal bond

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22722182A JPS59121890A (en) 1982-12-28 1982-12-28 Ceramic and metal bond

Publications (2)

Publication Number Publication Date
JPS59121890A true JPS59121890A (en) 1984-07-14
JPH0351119B2 JPH0351119B2 (en) 1991-08-05

Family

ID=16857389

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22722182A Granted JPS59121890A (en) 1982-12-28 1982-12-28 Ceramic and metal bond

Country Status (1)

Country Link
JP (1) JPS59121890A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6459986A (en) * 1987-08-31 1989-03-07 Toshiba Corp Ceramic circuit board
JPS6461366A (en) * 1987-08-28 1989-03-08 Toshiba Corp Method for joining ceramic and metal together
JPH0268448U (en) * 1988-11-11 1990-05-24
US5100740A (en) * 1989-09-25 1992-03-31 General Electric Company Direct bonded symmetric-metallic-laminate/substrate structures
US5176309A (en) * 1990-05-25 1993-01-05 Kabushiki Kaisha Toshiba Method of manufacturing circuit board
JPH07193358A (en) * 1992-12-17 1995-07-28 Dowa Mining Co Ltd Manufacture of ceramic electronic circuit board
US5965193A (en) * 1994-04-11 1999-10-12 Dowa Mining Co., Ltd. Process for preparing a ceramic electronic circuit board and process for preparing aluminum or aluminum alloy bonded ceramic material
EP1243569A2 (en) 1994-04-11 2002-09-25 Dowa Mining Co., Ltd. Electrical circuit having a metal-bonded-ceramic material or MBC component as an insulating substrate
JP2007165600A (en) * 2005-12-14 2007-06-28 Omron Corp Power module structure, and solid-state relay using same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3529055B2 (en) * 1994-05-18 2004-05-24 電気化学工業株式会社 Insulating heat sink

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5443576A (en) * 1977-09-12 1979-04-06 Fujitsu Ltd Method of manufacturing printed board

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5443576A (en) * 1977-09-12 1979-04-06 Fujitsu Ltd Method of manufacturing printed board

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6461366A (en) * 1987-08-28 1989-03-08 Toshiba Corp Method for joining ceramic and metal together
JPS6459986A (en) * 1987-08-31 1989-03-07 Toshiba Corp Ceramic circuit board
JPH0525397B2 (en) * 1987-08-31 1993-04-12 Tokyo Shibaura Electric Co
JPH0268448U (en) * 1988-11-11 1990-05-24
US5100740A (en) * 1989-09-25 1992-03-31 General Electric Company Direct bonded symmetric-metallic-laminate/substrate structures
US5176309A (en) * 1990-05-25 1993-01-05 Kabushiki Kaisha Toshiba Method of manufacturing circuit board
US5280850A (en) * 1990-05-25 1994-01-25 Kabushiki Kaisha Toshiba Method of manufacturing circuit board
JPH07193358A (en) * 1992-12-17 1995-07-28 Dowa Mining Co Ltd Manufacture of ceramic electronic circuit board
US5965193A (en) * 1994-04-11 1999-10-12 Dowa Mining Co., Ltd. Process for preparing a ceramic electronic circuit board and process for preparing aluminum or aluminum alloy bonded ceramic material
US6183875B1 (en) 1994-04-11 2001-02-06 Dowa Mining Co., Ltd. Electronic circuit substrates fabricated from an aluminum ceramic composite material
EP1243569A2 (en) 1994-04-11 2002-09-25 Dowa Mining Co., Ltd. Electrical circuit having a metal-bonded-ceramic material or MBC component as an insulating substrate
JP2007165600A (en) * 2005-12-14 2007-06-28 Omron Corp Power module structure, and solid-state relay using same

Also Published As

Publication number Publication date
JPH0351119B2 (en) 1991-08-05

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