JPH03157989A - Bonding structure of ceramic board and metal plate - Google Patents
Bonding structure of ceramic board and metal plateInfo
- Publication number
- JPH03157989A JPH03157989A JP29713189A JP29713189A JPH03157989A JP H03157989 A JPH03157989 A JP H03157989A JP 29713189 A JP29713189 A JP 29713189A JP 29713189 A JP29713189 A JP 29713189A JP H03157989 A JPH03157989 A JP H03157989A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- ceramic
- material layer
- ceramic substrate
- board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 80
- 239000002184 metal Substances 0.000 title claims abstract description 80
- 239000000919 ceramic Substances 0.000 title claims abstract description 77
- 239000002131 composite material Substances 0.000 claims abstract description 28
- 239000007769 metal material Substances 0.000 claims abstract description 16
- 239000000203 mixture Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 12
- 229910000679 solder Inorganic materials 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 55
- 238000005219 brazing Methods 0.000 claims description 6
- 230000008646 thermal stress Effects 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 4
- 238000004299 exfoliation Methods 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 16
- 229910052802 copper Inorganic materials 0.000 description 16
- 239000010949 copper Substances 0.000 description 16
- 229910052721 tungsten Inorganic materials 0.000 description 13
- 239000010937 tungsten Substances 0.000 description 13
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 12
- 239000000843 powder Substances 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000010344 co-firing Methods 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Landscapes
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、セラミック基板と金属板を強固に接合させる
ための構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a structure for firmly bonding a ceramic substrate and a metal plate.
さらに具体的にいえば、例えばＩＣパッケージやパワー
ダイオード等の発熱部品を搭載するセラミック基板と放
熱用の金属板を接合させるための技術に関する。More specifically, the present invention relates to a technique for bonding a ceramic substrate on which a heat generating component such as an IC package or a power diode is mounted, and a metal plate for heat radiation.
［背景技術］
一般に、パワーダイオード等の発熱部品は、その内部温
度が所定の限界温度を超えないよう、常に放熱性を良好
にしておく必要がある。このため、パワーダイオード等
を搭載したセラミック基板を金属板（例えば、銅板）の
上に接合させ、放熱性を良好にしている。[Background Art] In general, heat-generating components such as power diodes must always have good heat dissipation so that their internal temperature does not exceed a predetermined temperature limit. For this reason, a ceramic substrate on which power diodes and the like are mounted is bonded onto a metal plate (for example, a copper plate) to improve heat dissipation.
第２図に示すものは、従来のセラミック基板１１と銅板
１４との接合構造である。この構造にあっては、セラミ
ック基板１１の両表面に例えば厚膜焼付は法によってあ
らかじめ銅メタライズ層１５．１２を形成しておき、前
記セラミック基板１１の他方表面の銅メタライズ層１２
を半田１３を介して銅板１４に接合させ、それによって
銅板１４とセラミック基板１１を一体化させている。さ
らに、セラミック基板１１の一方表面の銅メクライズ層
１５の上に半田１６によりパワーダイオード１７を接合
させ、これによってセラミック基板１１の上にパワーダ
イオード１７を搭載している。What is shown in FIG. 2 is a conventional bonding structure between a ceramic substrate 11 and a copper plate 14. As shown in FIG. In this structure, copper metallized layers 15 and 12 are formed in advance on both surfaces of the ceramic substrate 11 by, for example, a thick film baking method, and the copper metallized layers 15 and 12 on the other surface of the ceramic substrate 11 are
is bonded to a copper plate 14 via solder 13, thereby integrating the copper plate 14 and the ceramic substrate 11. Further, a power diode 17 is bonded to the copper meclyzed layer 15 on one surface of the ceramic substrate 11 by solder 16, thereby mounting the power diode 17 on the ceramic substrate 11.
よって、銅板１４はヒートシンクとして有効に機能し、
パワーダイオード１７で発生した熱は、パワーダイオー
ド１７からセラミック基板１１゜銅板１４へと伝導され
て銅板１４から放熱される。Therefore, the copper plate 14 effectively functions as a heat sink,
The heat generated by the power diode 17 is conducted from the power diode 17 to the ceramic substrate 11° and the copper plate 14, and is radiated from the copper plate 14.
［発明が解決しようとする課題］
しかしながら、上記のようなセラミック基板と金属板と
の接合構造では、セラミック基板と金属融液との濡れ性
が悪いため、セラミック基板と銅メタライズ層の間で必
要な接合強度を得ることが困難であった。[Problems to be Solved by the Invention] However, in the above-mentioned bonding structure between a ceramic substrate and a metal plate, the wettability of the ceramic substrate and the metal melt is poor, so that a bond between the ceramic substrate and the copper metallized layer is necessary. It was difficult to obtain sufficient bonding strength.
また、セラミック基板と金属板は互いに熱膨張率の差が
大きいため（特に、窒化アルミニウムなどは、熱膨張率
が小さい）、作業温度や使用雰囲気温度の影響により熱
応力が生じ、金属板とセラミック基板との間に剥離が起
こり易く、接合体の品質に対する信頼性が低いという問
題があった。In addition, since the ceramic substrate and the metal plate have a large difference in thermal expansion coefficient from each other (aluminum nitride, etc., have a small thermal expansion coefficient), thermal stress occurs due to the influence of the working temperature and the operating atmosphere temperature, and the metal plate and the ceramic There was a problem in that peeling easily occurred between the bonded body and the substrate, and the reliability of the quality of the bonded body was low.
本発明は、上記従来例の欠点に鑑みてなされたものであ
り、その目的とするところは、セラミック基板と金属板
の間の接合強度を改善すると共に、セラミック基板と金
属板の間に熱膨張率の差に基因する剥離が生じるのを防
止することにある。The present invention has been made in view of the above-mentioned drawbacks of the conventional examples, and its purpose is to improve the bonding strength between the ceramic substrate and the metal plate, and to reduce the difference in thermal expansion coefficient between the ceramic substrate and the metal plate. The purpose is to prevent the occurrence of peeling.
［課題を解決するための手段］
このため、本発明のセラミック基板と金属板の接合構造
は、セラミック基板と、当該セラミック基板と同じ組成
のセラミックと金属とからなり、一方表面から他方表面
へ向けて金属組成比が漸増し、セラミックリッチ側の一
方表面を同時焼成によって前記セラミック基板の表面に
接合させられたセラミック−金属領斜組成材料層と、前
記セラミック−金属領斜組成材料層の金属リッチ側の他
方表面に形成された金属材層と、ろう材もしくは半田に
よって前記金属材層に接合された金属板とからなること
を特徴としている。[Means for Solving the Problems] Therefore, the bonding structure of a ceramic substrate and a metal plate of the present invention consists of a ceramic substrate, a ceramic and a metal having the same composition as the ceramic substrate, and has a structure in which the bonding structure is made of a ceramic substrate and a metal having the same composition as the ceramic substrate. The metal composition ratio gradually increases, and the ceramic-metal diagonal composition material layer is bonded to the surface of the ceramic substrate by co-firing one surface on the ceramic-rich side, and the metal-rich ceramic-metal diagonal composition material layer is bonded to the surface of the ceramic substrate. It is characterized by comprising a metal material layer formed on the other surface of the side, and a metal plate joined to the metal material layer by brazing material or solder.
［作用］
本発明にあっては、セラミック−金属領斜組成材料層の
セラミックリッチ側の一方表面をセラミック基板に同時
焼成によって接合させているので、セラミック基板とセ
ラミック−金属領斜組成材料層とを強固に接合させるこ
とができる。また、セラミック−金属領斜組成材料層の
金属リッチ側の他方表面に金属材層を形成しているので
、強固な金属材層を形成できる。さらに、金属材層に半
田もしくはろう材によって金属板をろう付けしているの
で、しっかりと金属板を接合させることができる。この
結果、セラミック基板と金属板の接合強度を大きくでき
る。[Function] In the present invention, one surface of the ceramic-rich side of the ceramic-metal domain composition material layer is bonded to the ceramic substrate by simultaneous firing, so that the ceramic substrate and the ceramic-metal domain composition material layer are bonded to each other by simultaneous firing. can be firmly joined. Moreover, since the metal material layer is formed on the other surface of the metal-rich side of the ceramic-metal diagonal composition material layer, a strong metal material layer can be formed. Furthermore, since the metal plate is brazed to the metal layer using solder or brazing material, the metal plate can be firmly joined. As a result, the bonding strength between the ceramic substrate and the metal plate can be increased.
しかも、本発明にあっては、セラミック基板と金属板と
の間に、セラミックと金属の組成比が徐々に変化してい
るセラミック−金属領斜組成材料層が設けられているの
で、セラミック−金属領斜組成材料層で熱膨張率が徐々
に変化している。このなめ、セラミック基板と金属板と
の間の熱応力がセラミック−金属領斜組成材料層中に分
散させられ、金属板とセラミック基板の熱膨張率の差に
基因して生じる熱応力を緩和させてセラミック基板と金
属板の間の剥離を防止できる。Moreover, in the present invention, the ceramic-metal diagonal composition material layer in which the composition ratio of ceramic and metal gradually changes is provided between the ceramic substrate and the metal plate. The coefficient of thermal expansion gradually changes in the layer of diagonal composition material. Due to this slant, the thermal stress between the ceramic substrate and the metal plate is dispersed in the ceramic-metal diagonal composition material layer, and the thermal stress caused due to the difference in thermal expansion coefficient between the metal plate and the ceramic substrate is alleviated. This can prevent peeling between the ceramic substrate and the metal plate.
［実施例］ 以下、本発明の実施例を添付図に基づいて詳述する。[Example] Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
第１図は、セラミック基板と金属板の接合構造体の一実
施例を示す断面図である。この実施例にあっては、パワ
ーダイオード等の発熱部品を搭載するための窒化アルミ
ニウムやアルミナ等のセラミック基板ｌの下面に、セラ
ミック基板１と同材質のセラミックとタングステン等の
重金属からなるセラミック−金属領斜組成材料層２が設
けられており、さらにセラミック−金属領斜組成材料層
２の表面には、ニッケル、銅または銀などの金属材料に
よって形成された金属材層３が設けられており、この金
属材層３の表面に半田又はろう材４を介して銅板等の金
属板５が接合されている。上記セラミック−金属領斜組
成材料層２は、セラミック基板】と同材質のセラミック
とタングステン等の金属からなるものであって、表面と
平行な層６
内では両材料の組成比がほぼ一定となっているが、厚み
方向では両材料は傾斜組成となっている。すなわち、セ
ラミック−金属領斜組成材料層２の一方表面ではセラミ
ック過多の組成（セラミックリッチ）となっており、他
方表面では金属過多の組成（金属リッチ）となっており
、その中間ではセラミックリッチ面から金属リッチ面に
向けてセラミックの組成比が徐々に減少している。また
、セラミック−金属領斜組成材料層２のタングステンリ
ッチ側の他方表面ではタングステン組成がほぼ１００％
となっている。そして、セラミック金属傾斜組成材料層
２は、セラミックリッチ側の一方表面がセラミック基板
１に接合され、金属リッチ側の他方表面に金属材層３が
設けられている。FIG. 1 is a sectional view showing an example of a bonded structure of a ceramic substrate and a metal plate. In this embodiment, on the bottom surface of a ceramic substrate l made of aluminum nitride, alumina, etc., on which heat-generating components such as power diodes are mounted, a ceramic-metal made of ceramic of the same material as the ceramic substrate 1 and a heavy metal such as tungsten is placed. A diagonal composition material layer 2 is provided, and a metal material layer 3 made of a metal material such as nickel, copper or silver is provided on the surface of the ceramic-metal diagonal composition material layer 2. A metal plate 5 such as a copper plate is bonded to the surface of this metal material layer 3 via solder or a brazing material 4. The ceramic-metal layer 2 is made of the same ceramic material as the ceramic substrate and a metal such as tungsten, and the composition ratio of both materials is almost constant within the layer 6 parallel to the surface. However, both materials have a gradient composition in the thickness direction. That is, one surface of the ceramic-metal gradient composition material layer 2 has a ceramic-rich composition (ceramic-rich), the other surface has a metal-rich composition (metal-rich), and in the middle there is a ceramic-rich surface. The ceramic composition ratio gradually decreases from 1 to 3 toward the metal-rich surface. Furthermore, on the other surface of the tungsten-rich side of the ceramic-metal gradient composition material layer 2, the tungsten composition is almost 100%.
It becomes. One surface of the ceramic-metal gradient composition material layer 2 on the ceramic-rich side is joined to the ceramic substrate 1, and the metal material layer 3 is provided on the other surface on the metal-rich side.
次に、この接合構造体の製造方法をより具体的に説明す
る。まず、窒化アルミニウム（以下、ＡＱＮと記す）粉
末と、焼結助剤として酸化イツトリウム（以下、Ｙ２Ｏ
３と記す）粉末を用意し、ＡＱＮ粉末にＹ２Ｏ３粉末を
３ｗｔ％添加して混合し、さらに有機バインダーを加え
、ドクターブレード法等によってＡＱＮのグリーンシー
トを成形する。次に、セラミック−金属領斜組成材料層
を形成するため、上記ＡＱＮとＹ２Ｏ３の混合粉末に対
して２００ｗｔ％の割合でタングステン（Ｗ）粉末を添
加し、さらに有機バインダーを加えて混合攪拌し、ドク
ターブレード法等によって厚み１００ρのグリーンシー
トを成形する。この後、このグリーンシートを乾燥速度
を遅くして乾燥させることによりタングステン粉末を沈
降させる。この乾燥工程においては、乾燥速度を遅くし
ているので、硬化するまでの間にＡＱＮのスラリーより
も比重の大きなタングステン（重金属）が自重で沈降し
、他方表面側でタングステンリッチとなり、一方表面側
でＡＱＮリッチとなる。この後、ＡＱＮリッチ側の一方
表面を接触させるようにしてＡＱＮ−Ｙ２Ｏ３−タング
ステンのグリーンシートとＡＱＮ−Ｙ２Ｏ３のグリーン
シートを積層し、加圧して互いに圧着させる。この後、
ＡＱＮＹ２０３−タングステンのグリーンシートのタン
グステンリッチ側の他方表面にタングステンペーストを
塗布及び乾燥させ、セラミック−金属領斜組成材料層の
表面でタングステンの組成がほぼ１００％となるように
した。こうして圧着させた両グリーンシートの積層体を
、窒素雰囲気中において８００℃で２時間の脱バインダ
ー処理を行ない、この後、さらに窒素雰囲気中において
１８５０°Ｃで５時間一体焼成し、セラミック基板を焼
成すると同時に、セラミック基板の表面にセラミック−
金属領斜組成材料層を強固に接合させる。Next, a method for manufacturing this bonded structure will be explained in more detail. First, aluminum nitride (hereinafter referred to as AQN) powder and yttrium oxide (hereinafter referred to as Y2O
3) powder is prepared, 3 wt% of Y2O3 powder is added and mixed with AQN powder, an organic binder is further added, and an AQN green sheet is formed by a doctor blade method or the like. Next, in order to form a ceramic-metal domain gradient composition material layer, tungsten (W) powder was added at a ratio of 200 wt% to the mixed powder of AQN and Y2O3, and an organic binder was further added and mixed and stirred. A green sheet with a thickness of 100ρ is formed by a doctor blade method or the like. Thereafter, the green sheet is dried at a slow drying speed to precipitate the tungsten powder. In this drying process, the drying speed is slow, so tungsten (heavy metal), which has a higher specific gravity than the AQN slurry, settles under its own weight until it hardens, becoming tungsten-rich on the other surface side, and Become AQN rich. Thereafter, the AQN-Y2O3-tungsten green sheet and the AQN-Y2O3 green sheet are laminated so that one surface on the AQN rich side is in contact with each other, and pressure is applied to bond them to each other. After this,
A tungsten paste was applied to the other surface of the tungsten-rich side of the AQNY203-tungsten green sheet and dried so that the tungsten composition was approximately 100% on the surface of the ceramic-metal diagonal composition material layer. The laminate of both green sheets pressed together in this way was subjected to binder removal treatment at 800°C in a nitrogen atmosphere for 2 hours, and then integrally fired at 1850°C in a nitrogen atmosphere for 5 hours to form a ceramic substrate. At the same time, a ceramic coating is applied to the surface of the ceramic substrate.
To firmly bond the metal domain diagonal composition material layer.
上記のようにして、セラミック基板とセラミック−金属
領斜組成材料層を積層し、同時焼成しな後、このタング
ステン層の表面に電解メツキによってニラクルの金属材
層を形成しな。ついで、金属材層の上に半田によって銅
板を半田付けし、半田を介してセラミック基板に銅板を
強固に接合させる。After laminating the ceramic substrate and the ceramic-metal gradient composition material layer and co-firing them as described above, a Niracle metal material layer is formed on the surface of the tungsten layer by electrolytic plating. Next, a copper plate is soldered onto the metal material layer, and the copper plate is firmly joined to the ceramic substrate via the solder.
しかして、上記のような接合体においては、セラミック
−金属領斜組成材料層２のセラミックリッチ側の一方表
面をセラミック基板に同時焼成によって接合させている
ので、セラミック基板１の表面に強固にセラミック−金
属領斜組成材料層２を接合させることができる。また、
金属材層３はセラミック−金属領斜組成材料層２の金属
リッチ側の他方表面に強固に形成できる。さらに、金属
材層３に半田もしくはろう材４によって金属板５を接合
させているので、セラミック基板１と金属板５の間に接
合強度の弱い部分が生じることがなく、セラミック基板
１と金属板５とを強固に接合させることができる。さら
に、セラミック−金属領斜組成材料層２では、セラミッ
クと金属との組成比が徐々に変化しているので、セラミ
ック基板１と金属板５との間で熱膨張率が徐々に変化し
ており、熱応力がセラミック−金属領斜組成材料層２で
応力集中しに＜＜、セラミック基板１と金属板５とで剥
離を生じにくい。In the above-described bonded body, one surface of the ceramic-rich side of the ceramic-metal domain composition material layer 2 is bonded to the ceramic substrate by simultaneous firing, so that the ceramic is firmly bonded to the surface of the ceramic substrate 1. - The metal domain gradient composition material layer 2 can be bonded. Also,
The metal material layer 3 can be firmly formed on the other surface of the metal-rich side of the ceramic-metal diagonal composition material layer 2. Furthermore, since the metal plate 5 is bonded to the metal material layer 3 by solder or brazing material 4, there will be no weak bonding strength between the ceramic substrate 1 and the metal plate 5. 5 can be firmly joined. Furthermore, in the ceramic-metal diagonal composition material layer 2, the composition ratio of ceramic and metal gradually changes, so the coefficient of thermal expansion gradually changes between the ceramic substrate 1 and the metal plate 5. Since the thermal stress concentrates in the ceramic-metal diagonal composition material layer 2, peeling between the ceramic substrate 1 and the metal plate 5 is less likely to occur.
なお、本発明の効果を試験するため、上記のようにして
製造された接合構造体に、−４０℃〜１２５℃でヒート
サイクルテストを方伍しなところ、１００サイクル後で
もセラミック基板にクラックは発生せず、銅板の剥離も
生じなかった。In addition, in order to test the effects of the present invention, the bonded structure manufactured as described above was subjected to a heat cycle test at -40°C to 125°C. However, there were no cracks in the ceramic substrate even after 100 cycles. This did not occur, and no peeling of the copper plate occurred.
］０
［発明の効果］
本発明によれば、セラミック基板の表面に大きな接合強
度で金属板を接合することができる。しかも、セラミッ
ク−金属領斜組成材料層では組成比が徐々に変化してい
るので、熱膨張率が徐々に変化しており、熱応力集中が
緩和され、セラミック基板と金属板の熱膨張率の差によ
り生じる熱応力のためにセラミック基板と金属板が剥離
するのを防止できる。]0 [Effects of the Invention] According to the present invention, a metal plate can be bonded to the surface of a ceramic substrate with high bonding strength. Moreover, since the composition ratio of the ceramic-metal diagonal composition material layer gradually changes, the thermal expansion coefficient gradually changes, which alleviates thermal stress concentration and reduces the thermal expansion coefficient of the ceramic substrate and metal plate. It is possible to prevent the ceramic substrate and the metal plate from peeling off due to thermal stress caused by the difference.
第１図は本発明の一実施例を示す概略断面図、第２図は
従来例の概略断面図である。
１・・・セラミック基板
２・・・セラミック−金属領斜組成材料層３・・・金属
材層
４・・・半田又はろう材
５・・・金属板FIG. 1 is a schematic sectional view showing one embodiment of the present invention, and FIG. 2 is a schematic sectional view of a conventional example. 1...Ceramic substrate 2...Ceramic-metal diagonal composition material layer 3...Metal material layer 4...Solder or brazing material 5...Metal plate
Claims (1)
らなり、一方表面から他方表面へ向けて金属組成比が漸
増し、セラミックリッチ側の一方表面が同時焼成によっ
て前記セラミック基板の表面に接合させられたセラミッ
ク−金属領斜組成材料層と、 前記セラミック−金属領斜組成材料層の金属リッチ側の
他方表面に形成された金属材層と、ろう材もしくは半田
によって前記金属材層に接合された金属板とからなるこ
とを特徴とするセラミック基板と金属板の接合構造。(1) A ceramic substrate made of a ceramic and a metal having the same composition as the ceramic substrate, the metal composition ratio gradually increasing from one surface to the other surface, and one surface on the ceramic-rich side is co-fired to form the ceramic substrate. a ceramic-metal diagonal composition material layer bonded to the surface; a metal material layer formed on the other surface of the metal-rich side of the ceramic-metal diagonal composition material layer; and a brazing material or solder to bond the metal material layer. A bonding structure of a ceramic substrate and a metal plate, characterized by comprising a metal plate bonded to a ceramic substrate and a metal plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29713189A JPH03157989A (en) | 1989-11-15 | 1989-11-15 | Bonding structure of ceramic board and metal plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29713189A JPH03157989A (en) | 1989-11-15 | 1989-11-15 | Bonding structure of ceramic board and metal plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03157989A true JPH03157989A (en) | 1991-07-05 |
Family
ID=17842609
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29713189A Pending JPH03157989A (en) | 1989-11-15 | 1989-11-15 | Bonding structure of ceramic board and metal plate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03157989A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0533466U (en) * | 1991-10-08 | 1993-04-30 | 株式会社フジ電科 | Airtight terminal |
| JP2011009405A (en) * | 2009-06-25 | 2011-01-13 | Kyocera Corp | Thermoelectric conversion module |
-
1989
- 1989-11-15 JP JP29713189A patent/JPH03157989A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0533466U (en) * | 1991-10-08 | 1993-04-30 | 株式会社フジ電科 | Airtight terminal |
| JP2011009405A (en) * | 2009-06-25 | 2011-01-13 | Kyocera Corp | Thermoelectric conversion module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4969738B2 (en) | Ceramic circuit board and semiconductor module using the same | |
| JP5023165B2 (en) | Ceramic circuit board | |
| JPS6265991A (en) | High heat conductive ceramics substrate | |
| JPH06296084A (en) | Thermal conductor of high conductivity, wiring board provided therewith and manufacture thereof | |
| JPH05347469A (en) | Ceramic circuit board | |
| US20240006266A1 (en) | Direct bonded copper substrates fabricated using silver sintering | |
| JPH0810202Y2 (en) | Lightweight substrates for semiconductor devices | |
| JPH03157989A (en) | Bonding structure of ceramic board and metal plate | |
| JPH0770644B2 (en) | Thermal conductive substrate | |
| TWI654914B (en) | Method for improving adhesion of ceramic carrier board and thick film circuit | |
| JP2861357B2 (en) | Aluminum nitride-copper bonding method | |
| JPH06263554A (en) | Jointed substrate of ceramics-metal | |
| JP2517024B2 (en) | Ceramic package and its manufacturing method | |
| JP2001308519A (en) | Aluminum nitride circuit board | |
| JP2654868B2 (en) | Ceramic substrate with copper circuit | |
| JP2734170B2 (en) | Aluminum nitride multilayer substrate wiring paste | |
| JP2652014B2 (en) | Composite ceramic substrate | |
| JP2004327737A (en) | Compound substrate and manufacturing method therefor | |
| JP2715686B2 (en) | Method for manufacturing ceramic-metal joined body | |
| JPH03141169A (en) | Metallized structure of aluminum nitride substrate and bond structure of aluminum nitride substrate with metal plate | |
| JPH0344064A (en) | Junction structure of aluminum nitride substrate and metal substrate | |
| JPH0255271A (en) | Bond structure consisting of aluminum nitride substrate and metallic plate | |
| JP2000349098A (en) | Bonded body of ceramic substrate and semiconductor device, and its manufacture | |
| JPH02240995A (en) | Ceramic substrate for electronic component mounting | |
| JP3222348B2 (en) | Manufacturing method of ceramic package |