JPS59111995A - Device for liquid-phase epitaxial phase - Google Patents

Abstract

PURPOSE:To obtain a simple device capable of treating a large number of substrates by the same process without transferring a reaction tube extremely, by keeping plural substrates to be brought into contact with melt in a heat-resistant sealed tube in a specific state in the sealed tube, rotating the sealed tube. CONSTITUTION:The cylindrical supporting member 12A to be inscribed in a thin quartz tube with a bottom is inserted into the tube and it is charged with the epitaxial layer forming material 16 such as Hg, Cd, or Te to be formed on substrates. The supporting plate 15 and the substrate 14 are inserted into the hollows 13 of the member 12A and the member 12B at positions apart from the diameter lines facing each other in such a way that the substrate 14 of CdTe is piled on the supporting member 15, and it is sandwiched by both members. Similarly, the plural substrates are sandwiched, the thin quartz tube is evacuated, the end E of the thin quartz tube is sealed while the member 12C is fixed by the quartz bar 17, and the sealed tube 11 is prepared. The sealed tube 11 is inserted into a heating furnace, heated, the material 16 is melted, the sealed tube 11 is rotated in the direction D, sludge on the material 16 is removed by the ends of the plates 15, the material melt is brought into contact with the substrates 14, the temperature is dropped, and an epitaxial layer is formed on the substrates 14.

Description

【発明の詳細な説明】 （ａ）　　発明の技術分野 本発明は傾斜法を用いた密閉端の液相エビクキシャル成
長装置に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a closed-end liquid phase evictional growth apparatus using a tilting method.

（１））　　技術の力県 鉛（ｐｂ）を含む化合物半得体結晶２例えば鉛−錫一テ
ルル（ＰＩ）１−ｘＳｎＸＴｅ　）や水銀（Ｈｇ）を含
む化合物半尋体結晶１例えば水銀、刀ドミクム。(1)) Technological strength Compound semi-solid crystal containing lead (PB) 2 For example, lead-tin-tellurium (PI) 1-xSnXTe) and compound semi-solid crystal containing mercury (Hg) 1 For example, mercury, sword domicium .

テルル（Ｈｇ１−ＸＣｄｘＴθ）等はエネルキーキャン
プが狭く赤外線検知素子、赤外線レーサ歯子１等の光電
変換素子の形成材料として用いられているのＩ″ｉｉ崗
知る。It is well known that tellurium (Hg1-XCdxTθ) has a narrow energy camp and is used as a material for forming photoelectric conversion elements such as infrared detection elements and infrared laser teeth 1.

このような）（ｇｌ−ＸＣ！ｄＸＴｅのような化合物半
棒体結晶を簡単な装置で容易に形成する方法として傾斜
法を用いた液相エピタキシャル成長方法が従来より几い
られている。As a method for easily forming compound half-bar crystals such as (gl-XC!dXTe) using a simple apparatus, a liquid phase epitaxial growth method using a tilting method has been conventionally used.

（ｃ）従来技術と問題点 このよう々傾斜型液相エピタキシャル成長方法に用いる
従来の装置について第１図を用いながら説明する。(c) Prior Art and Problems The conventional apparatus used in the tilted liquid phase epitaxial growth method will be explained with reference to FIG.

図示するようにシーソーのように１点Ａを支点として上
）に移動する環状型加熱炉１の内部には。As shown in the figure, inside the annular heating furnace 1, which moves upwards with one point A as a fulcrum like a seesaw.

ろ英よりなる反応管２を設置し、この皮紐もの内部には
石英アシフル３を設けている。そしてムアンフル３中に
は、エピタキシャル成長用のカトミクムテルル（ＣｄＴ
ｅ）の基板４と、該基板上に形成すべきＨｇ１−ｘＣ６
ｘＴｅの結晶層の材料５の水銀（Ｈｇ）、　　カドミツ
ム（ｃａ）、　　テルル（Ｔｅ）を所定の組成となるよ
うに秤幼して７合金化した材Ｐ１・を充填したのち、該
アングルを排気後一端を封止している、 そしてｉ１ｊ記基板４は適当な石英製の沼共（図示せず
）を用いて傾斜させて封管３の一端部に設置し、また−
ｓ’Ｊｋ　”Ｆ　Ｉ　Ｘ　ＣｅＬＸ　Ｔｅの結晶層形成
材Ｐｉ５は封管３内の他端部に基＆４と対向して充填し
ている３゜ このような状態で加熱炉１の温度を昇温させ。A reaction tube 2 made of filtrate is installed, and a quartz ashful 3 is installed inside this leather strap. Muanghur 3 also contains catomic tellurium (CdT) for epitaxial growth.
Substrate 4 of e) and Hg1-xC6 to be formed on the substrate
After filling material P1, which is made by weighing mercury (Hg), cadmium (ca), and tellurium (Te) of material 5 of the xTe crystal layer and forming a 7-alloy to a predetermined composition, the angle is evacuated. The rear end of the tube is sealed, and the substrate 4 is installed at one end of the sealed tube 3 at an angle using a suitable quartz tube (not shown), and -
s'Jk "F I Let me.

前記形成材Ｐ１５を溶融して融液としたのち、加熱炉ｌ
を矢印Ｂの方向に傾けて融液５を基＆４の方向に移動さ
せ、該融液５に基＆４を浸漬させてから、加熱炉の温度
をＦ９ｒ定の温度勾配で低１させて。After melting the forming material P15 into a melt, it is heated in a heating furnace l.
The melt 5 is moved in the direction of the base &4 by tilting it in the direction of arrow B, and after the base &4 is immersed in the melt 5, the temperature of the heating furnace is decreased by a constant temperature gradient of F9r.

該基板４上にＨｇｌ　、　０（ｌＸＴｅの結晶層を形成
している。A crystal layer of Hgl,0(lXTe) is formed on the substrate 4.

セしてヒ１゛定の厚さに結晶層が形成されると加熱炉１
を矢印Ｃ方向に回転して移動させ、基板４上より融液を
（余いて結晶層の成長を停止させている。When a crystal layer is formed to a fixed thickness, heating furnace 1
is rotated and moved in the direction of arrow C, and the melt is left over from above the substrate 4 to stop the growth of the crystal layer.

しかしこのような従来の装置であると、加熱炉を上下に
所定の寸法で移動させ７反応管全体を大巾に移動させる
ような移動機構か必要で、装置か複雑となる欠点を生じ
る。However, such a conventional apparatus requires a moving mechanism to move the heating furnace up and down by a predetermined distance and to move the entire seven reaction tubes over a wide range, resulting in a disadvantage that the apparatus is complicated.

またこのような装置であるとエピタキシャル成長に要す
る融液をアンプル内で多足に必要、とする等欠点が多い
。Moreover, such an apparatus has many drawbacks, such as the need for multiple ampoules of melt for epitaxial growth.

（ｃｌｌ　　発明の目的 本発明は上述した欠点を除去し、ｉｌ」述した融液を傾
けて移動させて基板に接触させるいわゆる傾斜型液相エ
ピタキシャル成長用において、用いる融液の釦を少りに
して、また反応管を犬１］に移動させなくて済み同一の
工程で多数枚の基板を同時に処坤できつるような簡単な
装置の＆供を目的とするものである。Purpose of the Invention The present invention eliminates the above-mentioned drawbacks, and reduces the number of buttons of the melt used in so-called tilted liquid phase epitaxial growth, in which the melt is tilted and moved to contact the substrate. The purpose of the present invention is to provide a simple device that can process a large number of substrates at the same time in the same process without having to move the reaction tube to the dog 1.

（≧）発明の構成 かかる目的を達成するだめの本発明の液ねエビクキシャ
ル成長装置は、耐熱封管とｂ動的に内接するように収納
され、かつ龜内で互いに対向する面上の直径線をはずれ
た位置に、それぞれ凹所をそなえた支持部材を複数個設
け、該支す都相の勾いに対向する凹所間に絶品成長させ
るべき基板を保持させた状態で＋　Ｕ記封管を回転させ
ることにより、支持部材相互聞の基板上に冗埃している
結晶層形成材狛の融液に基板を接触させて、基板上にエ
ピタキシャル層を形成することを特徴とするものである
。史には前記基板が当該塞板の寸法より大きい寸法の耐
熱部材上に保杓された形で、上記複数の支ｆＡ都槁の対
向面上の凹所−」に挾袴されてなることを特徴とするも
のである。(≧) Structure of the Invention In order to achieve the above object, the liquid eviaxial growth apparatus of the present invention is housed so as to be dynamically inscribed with a heat-resistant sealed tube, and the diameter lines on the surfaces facing each other in the bowl are A plurality of supporting members each having a recess are provided at a position apart from the support member, and the substrate to be grown is held between the recesses facing the slope of the support member. By rotating the substrate, the substrate is brought into contact with the melt of the crystal layer forming material that is scattered on the substrate between the supporting members, and an epitaxial layer is formed on the substrate. . Historically, it is said that the board is secured on a heat-resistant member having a size larger than that of the blocking plate, and is inserted into the recesses on the opposing faces of the plurality of supports. This is a characteristic feature.

（ｆ）　　発明の実施例 以下図面を用いながら零発ヴｊの一吠施例につき第２図
は木兄もの液相エビクキシャル成長装置の斜視図で第３
図はその要部の断面図である。(f) Embodiments of the Invention With reference to the drawings, FIG. 2 is a perspective view of the liquid phase eviaxial growth apparatus manufactured by Kiyoi, and FIG.
The figure is a sectional view of the main part.

第２図、第３図に示すように耐熱性の石英よりなる封管
１１の内部には、該封管に内接するようにして円筒状の
支持部材１２Ａ、１２．Ｂ、１２０が複数個配設されて
いる。ここで図においては該文袴都桐を３偏１配設して
いるが、更に３個以上多数設けてもよい。該支持部材に
１２Ａ、１２Ｂ、１２ｃの互いに対向する１面上の直径
線をはすれた位置には、それぞれ凹所を設ける。この凹
所内にエピタキシャル結晶を形成すべきＣｄＴｅの基板
１４と該基板を保持し基板を支える石英等の耐熱性部材
よりなる支持板１５とが設けられている。そして支持板
１５の…Ｊ槓は基＆１４よりも大きくしておき、基板上
にエピタキシャル層を形成する際、エピタキシャル形成
用溶液上のスクンジをあらかじめ支持１９１５にて除去
するようにする。As shown in FIGS. 2 and 3, inside the sealed tube 11 made of heat-resistant quartz, cylindrical support members 12A, 12. A plurality of B, 120 are arranged. Here, in the figure, the Hakama Togiri with patterns are arranged in three sections, but three or more may be provided. Recesses are provided in the support member at positions separated from the diameter lines on one surface of the support members 12A, 12B, and 12c that face each other. A CdTe substrate 14 on which an epitaxial crystal is to be formed and a support plate 15 made of a heat-resistant member such as quartz that holds and supports the substrate are provided in this recess. The support plate 15 has a larger diameter than the base &14, so that when forming an epitaxial layer on the substrate, the surface of the epitaxial formation solution is removed by the support 1915 in advance.

このようなエヒクキシャル成長県慴ｔを用いて基板上に
エピタキシャル〜を形成する除の手順を述べると、まず
前述した封管１１を形成するための胸底の石英細管の内
部へ支持部材１２Ａを挿入する。To describe the procedure for forming an epitaxial layer on a substrate using such an epitaxial growth method, first, the supporting member 12A is inserted into the inside of the quartz tube at the base of the chest to form the sealed tube 11 described above. .

次いで基板上に形成すべきＨｇ１−ｘ　　ｃａＸ　Ｔｅ
のエビクキシャル層形成材料１６として）（ｇ、Ｃｄ、
Ｔｅをそれぞれ石英細管に充填する。次いで支持＆１５
とＣｄＴｅの基板１４とを積層するようにして支持部材
１２Ａと支持部材１２Ｂの凹所１３内へ挿入し。Next, Hg1-x caX Te to be formed on the substrate
(g, Cd,
Each quartz tube is filled with Te. Then support &15
and the CdTe substrate 14 are inserted into the recesses 13 of the support members 12A and 12B so as to be laminated.

支持部材１２Ａと支持部材１２Ｂとを用いて該基板１４
を挾み込む。The substrate 14 is
Insert.

次いで詣す述したのと同様にして基板１４と支持板１５
とを支持部材１２Ｂと支持部材１２０によって挾みこみ
、また支持部材１２Ｂと１２０闇にＨｇ１ｘＣｄＸＴｅ
の材料１６を充填する。Next, the substrate 14 and the support plate 15 are removed in the same manner as described above.
and are sandwiched between the support members 12B and 120, and Hg1xCdXTe is placed between the support members 12B and 120.
The material 16 is filled.

次いで石英細管の内部を真空に排気してから石英棒１７
を用いて、支持部材１２Ｃを固定しなから石英細管の一
端Ｅを封止して封管１１とする。Next, the inside of the quartz tube is evacuated, and then the quartz rod 17 is removed.
is used to fix the supporting member 12C and then seal one end E of the quartz tube to form the sealed tube 11.

その後封管１１を加熱炉内へ挿入したのち、加熱炉の温
度を所定の温度に昇温して＋Ｈｇｌ　Ｘ　ＣＣＩｘＴｅ
の材料を溶融してから、封管１１を矢印り方向に回転せ
しめ、あらかじめＨｇ１−エ　Ｃｄｘ　Ｔｅの溶液上の
スラツジを支持板１５の端部で除去してから基板１４上
にｌ（ｇｌ−Ｘ　Ｃ！ｄｘ　Ｔｅの溶液を接触させたの
ち、加熱炉の温度を一低）せしめて糸形成する。After that, the sealed tube 11 is inserted into the heating furnace, and the temperature of the heating furnace is raised to a predetermined temperature to +Hgl X CCIxTe.
After melting the material, the sealed tube 11 is rotated in the direction of the arrow, and the sludge on the Hg1-Cdx Te solution is removed in advance at the end of the support plate 15, and then the material is melted on the substrate 14. After contacting with the solution of X C!dx Te, the temperature of the heating furnace is lowered to form a thread.

このようにすれば多数の基板上に同一・にエピタキシャ
ル層が密閉状らで形成できるので、易蒸発性のＨｇを含
むＨｇＩ−Ｘ　Ｃｄｘ　Ｔｅのエピタキシャル層が組成
変動を生じることなく同時に多数枚形成でき、エヒクキ
シャル層形成に要するコストが低下する利点を生じる。In this way, the same epitaxial layer can be formed on a large number of substrates in a sealed manner, so that a large number of HgI-X Cdx Te epitaxial layers containing easily evaporable Hg can be formed simultaneously without compositional fluctuation. This has the advantage of reducing the cost required for forming an epiaxial layer.

なお本失施例においては支持部材を３個としてその支持
部材間に基板を２枚挾んだ状態を示したが、その他封愉
の長さを長くし支持部材を多数設けることで更に多数枚
の基板上に同時にエビクキシャル層か形成できる。また
基板１４を基板支持＆１５の片面でなく１両面に支持さ
せて２枚の基板が同時に溶液中に浸油できるようにして
おけ舘一層多量製造に適したものとなる。In addition, in this example, there are three supporting members and two substrates are sandwiched between the supporting members, but it is possible to increase the number of substrates by increasing the length of the seal and providing a large number of supporting members. It is possible to simultaneously form an evictional layer on two substrates. Furthermore, by supporting the substrate 14 not on one side but on one side of the substrate support &15 so that the two substrates can be immersed in oil at the same time, the system becomes more suitable for mass production.

（ロ））発明の効果 以上述べたように本発明の液相エヒクキシャル成長装置
によれば、ｈＸ発性のＨｇを舌む化合物半専体のエピタ
キシャル層が比閉状すで形成さｎるので１組成の安定し
たエビクキシャル層が得られ、捷だ同一の工程でエヒク
キシャル結晶を有する基板が一反に多数枚形成できる利
点を有する。(b)) Effects of the Invention As described above, according to the liquid phase epitaxy apparatus of the present invention, an epitaxial layer consisting of a semi-exclusive compound that absorbs hX-generated Hg is formed in a specific closed state. This method has the advantage that an eviaxial layer with a stable composition can be obtained, and that a large number of substrates having an echnical crystal can be formed in one roll in the same cutting process.

【図面の簡単な説明】 第１図は従来の欧相エピタキシャル成長装置１を示す斜
視図、第２図、第３図は本発明の液キ１エヒタキシャル
成長装置を示す斜視図およびその要部の断面図である。 図において１は加熱炉、２は反応管、３はフングル、４
．１４はｃａＴｅ恭＆、　　５．１６はＨＦ、１．　Ｃ
ＡｘＴｅの材％、　　１１はＴｈｉ％、　　１２Ａ、１
２Ｂ、１２ｃに文袴都相、１３は門１５ｉ−，１５は支
持板、１７はめ英捧。 Ａは炉の中心、Ｂ、Ｃ，Ｄは回転方向を示す矢印。 ＦｌはＮ部である。 ４９[BRIEF DESCRIPTION OF THE DRAWINGS] Fig. 1 is a perspective view showing a conventional European phase epitaxial growth apparatus 1, and Figs. 2 and 3 are perspective views showing a liquid epitaxial growth apparatus 1 of the present invention, and a cross section of the main parts thereof. It is a diagram. In the figure, 1 is a heating furnace, 2 is a reaction tube, 3 is a hungul, and 4 is a heating furnace.
．． 14 is caTe Kyo&, 5.16 is HF, 1. C
AxTe material%, 11 is Thi%, 12A, 1
2B, 12c is a hakama capital, 13 is a gate 15i-, 15 is a support plate, 17 is an inscription. A indicates the center of the furnace, and B, C, and D indicate the direction of rotation. Fl is the N part. 49

Claims (2)

【特許請求の範囲】[Claims] （１）耐熱封管と該封管に内接するように収納され。 かつ管内で互いに対向する面上の直径線をはずれた位置
に、それぞれ凹所をそなえた叉杓都桐を複数個設け１該
支持部材の互いに対向する凹所間に結晶成梃させるべき
基板を保持させだ状らで、前記封管を回転させることに
より、支持部桐相互間の基板下に充填している結晶脂形
成材刺の融液に基板を接触させて、基板上にエヒクキシ
ャル層を形成することを特徴とする液相エピタキシャル
成長装負。(1) It is housed in a heat-resistant sealed tube and inscribed in the sealed tube. In addition, a plurality of paulownia dippers each having a recess are provided at positions deviating from the diametrical line on surfaces facing each other within the pipe.1 A substrate on which crystal growth is to be made is placed between the recesses facing each other in the supporting member. By rotating the sealed tube using the holding ridges, the substrate is brought into contact with the melt of the crystal fat forming material barbs filled under the substrate between the support parts, thereby forming an epiaxial layer on the substrate. A liquid phase epitaxial growth device characterized by forming. （２）前記基板が当該基板の寸法より大きい寸法の１ｌ
Ｉｌｆ熱部材上に保持された形で、上記複数の支持部材
の対向面上の凹所間に挾持されてなることを特徴とする
特許請求の範囲第（１）項に記載の液相エビクキシャル
成長装置。(2) The size of the board is larger than that of the board.
The liquid phase eviaxial growth according to claim (1), wherein the liquid phase eviaxial growth is held on the Ilf heating member and sandwiched between recesses on the opposing surfaces of the plurality of supporting members. Device.