JPH027918B2 - - Google Patents
Info
- Publication number
- JPH027918B2 JPH027918B2 JP22102482A JP22102482A JPH027918B2 JP H027918 B2 JPH027918 B2 JP H027918B2 JP 22102482 A JP22102482 A JP 22102482A JP 22102482 A JP22102482 A JP 22102482A JP H027918 B2 JPH027918 B2 JP H027918B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- epitaxial growth
- sealed tube
- sandwiched
- liquid phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 11
- 239000007791 liquid phase Substances 0.000 claims description 10
- 239000010453 quartz Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 239000003708 ampul Substances 0.000 description 6
- RPPBZEBXAAZZJH-UHFFFAOYSA-N cadmium telluride Chemical compound [Te]=[Cd] RPPBZEBXAAZZJH-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000000155 melt Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 239000010802 sludge Substances 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/061—Tipping system, e.g. by rotation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
【発明の詳細な説明】
(a) 発明の技術分野
本発明は傾斜法を用いた密閉型の液相エピタキ
シヤル成長装置に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a closed type liquid phase epitaxial growth apparatus using a tilting method.
(b) 技術の背景
鉛（Pb）を含む化合物半導体結晶、例えば鉛
−錫−テルル（Pb1-x Snx Te）や水銀（Hg）
を含む化合物半導体結晶、例えば水銀、カドミウ
ム、テルル（Hg1-x Cdx Te）等はエネルギー
ギヤツプが狭く赤外線検知素子、赤外線レーザー
素子、等の光電変換素子の形成材料として用いら
れているのは周知である。(b) Technical background Compound semiconductor crystals containing lead (Pb), such as lead-tin-tellurium (Pb 1-x Sn x Te) and mercury (Hg)
Compound semiconductor crystals containing mercury, cadmium, tellurium (Hg 1-x Cd x Te), etc. have a narrow energy gap and are used as forming materials for photoelectric conversion elements such as infrared detection elements, infrared laser elements, etc. It is well known that
このようなHg1-x Cdx Teのような化合物半
導体結晶を簡単な装置で容易に形成する方法とし
て傾斜法を用いた液相エピタキシヤル成長方法が
従来より用いられている。 A liquid phase epitaxial growth method using a tilting method has conventionally been used to easily form compound semiconductor crystals such as Hg 1-x Cd x Te using a simple device.
(c) 従来技術と問題点
このような傾斜型液相エピタキシヤル成長方法
に用いる従来の装置について第１図を用いながら
説明する。(c) Prior Art and Problems A conventional apparatus used in such a tilted liquid phase epitaxial growth method will be explained with reference to FIG.
図示するようにシーソーのように１点Ａを支点
として上下に移動する環状型加熱炉１の内部に
は、石英よりなる反応管２を設置し、この反応管
の内部には石英アンプル３を設けている。そして
該アンプル３中には、エピタキシヤル成長用のカ
ドミウムテルル（CdTe）の基板４と、該基板上
に形成すべきHg1-x Cdx Teの結晶層の材料５
の水銀（Hg）、カドミウム（Cd）、テルル（Te）
を所定の組成となるように秤量して、合金化した
材料を充填したのち、該アンプルを排気後一端を
封止している。 As shown in the figure, a reaction tube 2 made of quartz is installed inside an annular heating furnace 1 that moves up and down with a point A as a fulcrum like a seesaw, and a quartz ampoule 3 is installed inside this reaction tube. ing. The ampoule 3 contains a cadmium tellurium (CdTe) substrate 4 for epitaxial growth, and a material 5 for a Hg 1-x Cd x Te crystal layer to be formed on the substrate.
Mercury (Hg), Cadmium (Cd), Tellurium (Te)
The ampoule is weighed so as to have a predetermined composition and filled with the alloyed material, and after the ampoule is evacuated, one end is sealed.
そして前記基板４は適当な石英製の治具（図示
せず）を用いて傾斜させて封管３の一端部に設置
し、また前記Hg1-x Cdx Teの結晶層形成材料
５は封管３の他端部に基板４と対向して充填して
いる。 Then, the substrate 4 is tilted and installed at one end of the sealed tube 3 using a suitable quartz jig (not shown), and the Hg 1-x Cd x Te crystal layer forming material 5 is sealed. The other end of the tube 3 is filled facing the substrate 4.
このような状態で加熱炉１の温度を昇温させ、
前記形成材料５を溶融して融液としたのち、加熱
炉１を矢印Ｂの方向に傾けて融液５を基板４の方
向に移動させ、該融液５に基板４を浸漬させてか
ら、加熱炉の温度を所定の温度勾配で低下させ
て、該基板４上にHg1-x Cdx Teの結晶層を形
成している。 In this state, the temperature of the heating furnace 1 is raised,
After the forming material 5 is melted into a melt, the heating furnace 1 is tilted in the direction of arrow B to move the melt 5 in the direction of the substrate 4, and the substrate 4 is immersed in the melt 5. A crystal layer of Hg 1-x Cd x Te is formed on the substrate 4 by lowering the temperature of the heating furnace at a predetermined temperature gradient.
そして所定の厚さに結晶層が形成されると加熱
炉１を矢印Ｃ方向に回転して移動させ、基板４上
より融液を除いて結晶層の成長を停止させてい
る。 When the crystal layer is formed to a predetermined thickness, the heating furnace 1 is rotated and moved in the direction of arrow C to remove the melt from the substrate 4 and stop the growth of the crystal layer.
しかしこのような従来の装置であると、加熱炉
を上下に所定の寸法で移動させ、反応管全体を大
巾に移動させるような移動機構が必要で、装置が
複雑となる欠点を生じる。 However, such a conventional apparatus requires a moving mechanism to move the heating furnace up and down by a predetermined distance and to move the entire reaction tube over a wide range, resulting in a complicated apparatus.
またこのような装置であるとエピタキシヤル成
長に要する融液をアンプル内で多量に必要とする
等欠点が多い。 Furthermore, such an apparatus has many drawbacks, such as the need for a large amount of melt in the ampoule for epitaxial growth.
(d) 発明の目的
本発明は上述した欠点を除去し、前述した融液
を傾けて移動させて基板に接触させるいわゆる傾
斜型液相エピタキシヤル成長法において、用いる
融液の量を少量にして、また反応管を大巾に移動
させなくて済み同一の工程で多数枚の基板を同時
に処理できうるような簡単な装置の提供を目的と
するものである。(d) Object of the Invention The present invention eliminates the above-mentioned drawbacks and improves the so-called tilted liquid phase epitaxial growth method, in which the melt is tilted and moved to contact the substrate, by reducing the amount of melt used. Another object of the present invention is to provide a simple apparatus that can process a large number of substrates at the same time in the same process without having to move the reaction tube over a large distance.
(e) 発明の構成
かかる目的を達成するための本発明の液相エピ
タキシヤル成長装置は、耐熱封管と、該耐熱封管
に内接して所定の空間部を隔てて収容された複数
の円柱状の支持部材とよりなり、該円柱状の支持
部材の互いに対向する面上の直径線を外れた位置
に設けた凹所間でエピタキシヤル成長用基板を挟
持するとともに、前記支持部材の凹所で挟持され
た複数の基板の下方の空間部にエピタキシヤル層
形成材料を収容したことを特徴とするものであ
る。更には前記基板が当該基板の寸法より大きい
寸法の耐熱部材上に保持された形で、上記複数の
支持部材の対向面上の凹所間に挾持されてなるこ
とを特徴とするものである。(e) Structure of the Invention The liquid phase epitaxial growth apparatus of the present invention for achieving the above object includes a heat-resistant sealed tube and a plurality of circles inscribed in the heat-resistant sealed tube and housed with a predetermined space apart. A substrate for epitaxial growth is sandwiched between recesses provided at positions apart from the diameter line on mutually opposing surfaces of the cylindrical support member, and the recess of the support member is It is characterized in that an epitaxial layer forming material is accommodated in the space below the plurality of substrates sandwiched between the substrates. Furthermore, the substrate is held on a heat-resistant member having a size larger than that of the substrate, and is sandwiched between recesses on opposing surfaces of the plurality of support members.
(f) 発明の実施例
以下図面を用いながら本発明の一実施例につき
詳細に説明する。(f) Embodiment of the Invention An embodiment of the present invention will be described in detail below with reference to the drawings.
第２図は本発明の液相エピタキシヤル成長装置
の斜視図で第３図はその要部の断面図である。 FIG. 2 is a perspective view of the liquid phase epitaxial growth apparatus of the present invention, and FIG. 3 is a sectional view of the main parts thereof.
第２図、第３図に示すように耐熱性の石英より
なる封管１１の内部には、該封管に内接するよう
にして円柱状の支持部材１２Ａ，１２ｂ，１２Ｃ
が複数個配設されている。ここで図においては該
支持部材を３個配設しているが、更に３個以上多
数設けてもよい。該支持部材に１２Ａ，１２Ｂ，
１２Ｃの互いに対向する面上の直径線をはずれた
位置には、それぞれ凹所１３を設ける。この凹所
内にエピタキシヤル結晶を形成すべきCdTeの基
板１４と該基板を保持し基板を支える石英等の耐
熱性部材よりなる支持板１５とが設けられてい
る。そして支持板１５の面積は基板１４よりも大
きくしておき、基板上にエピタキシヤル層を形成
する際、エピタキシヤル形成用溶液上のスラツジ
をあらかじめ支持板１５にて除去するようにす
る。そして支持板１５に保持されたCdTe基板１
４の下方の空間部に該基板上に形成すべきHg1-x
Cdx Teのエピタキシヤル層形成材料１６を収
容する。 As shown in FIGS. 2 and 3, inside the sealed tube 11 made of heat-resistant quartz, cylindrical support members 12A, 12b, 12C are inscribed in the sealed tube.
Multiple pieces are installed. In the figure, three supporting members are provided, but three or more supporting members may be provided. 12A, 12B,
Recesses 13 are provided at positions deviating from the diameter line on the mutually opposing surfaces of 12C. A CdTe substrate 14 on which an epitaxial crystal is to be formed and a support plate 15 made of a heat-resistant member such as quartz that holds and supports the substrate are provided in this recess. The area of the support plate 15 is made larger than that of the substrate 14, so that when an epitaxial layer is formed on the substrate, the sludge on the epitaxial formation solution is removed by the support plate 15 in advance. And the CdTe substrate 1 held on the support plate 15
Hg 1-x to be formed on the substrate in the space below 4
A Cd x Te epitaxial layer forming material 16 is contained therein.
このようなエピタキシヤル成長装置を用いて基
板上にエピタキシヤル層を形成する際の手順を述
べると、まず前述した封管１１を形成するための
有底の石英細管の内部へ支持部材１２Ａを挿入す
る。 To describe the procedure for forming an epitaxial layer on a substrate using such an epitaxial growth apparatus, first, the support member 12A is inserted into the bottomed quartz capillary tube for forming the sealed tube 11 described above. do.
次いで基板上に形成すべきHg1-x Cdx Teの
エピタキシヤル層形成材料１６としてHg、Cd、
Teをそれぞれ石英細管に充填する。次いで支持
板１５とCdTeの基板１４とを積層するようにし
て支持部材１２Ａと支持部材１２Ｂの凹所１３内
へ挿入し、支持部材１２Ａと支持部材１２Ｂとを
用いて該基板１４を挾み入む。 Next, Hg , Cd ,
Each quartz tube is filled with Te. Next, the support plate 15 and the CdTe substrate 14 are stacked and inserted into the recesses 13 of the support members 12A and 12B, and the substrate 14 is inserted between the support members 12A and 12B. nothing.
次いで前述したのと同様にして基板１４と支持
板１５とを支持部材１２Ｂと支持部材１２Ｃによ
つて挾みこみ、また支持部材１２Ｂと１２Ｃ間に
Hg1-x Cdx Teの材料１６を充填する。 Next, in the same manner as described above, the substrate 14 and the support plate 15 are sandwiched between the support members 12B and 12C, and the support plate 15 is sandwiched between the support members 12B and 12C.
Fill with material 16 of Hg 1-x Cd x Te.
次いで石英細管の内部を真空に排気してから石
英棒１７を用いて、支持部材１２Ｃを固定しなが
ら石英細管の一端Ｅを封止して封管１１とする。 Next, the inside of the quartz tube is evacuated to a vacuum, and then one end E of the quartz tube is sealed using a quartz rod 17 while fixing the support member 12C to form a sealed tube 11.
その後封管１１を加熱炉内へ挿入したのち、加
熱炉の温度を所定の温度に昇温して、Hg1-x
Cdx Teの材料を溶融してから、封管１１を矢印
Ｄ方向に回転せしめ、あらかじめHg1-x Cdx
Teの溶液上のスラツジを支持板１５の端部で除
去してから基板１４上にHg1-x Cdx Teの溶液
を接触させたのち、加熱炉の温度を低下せしめて
基板上にHg1-x Cdx Teのエピタキシヤル層を
形成する。 After that, after inserting the sealed tube 11 into the heating furnace, the temperature of the heating furnace is raised to a predetermined temperature, and Hg 1-x
After melting the Cd x Te material, the sealed tube 11 is rotated in the direction of arrow D, and Hg 1-x Cd x
After removing the sludge on the Te solution at the end of the support plate 15 and bringing the Hg 1-x Cd x Te solution into contact with the substrate 14 , the temperature of the heating furnace is lowered and the Hg 1-x Cd x Te solution is placed on the substrate. -x Form an epitaxial layer of Cd x Te.
このようにすれば多数の基板上に同時にエピタ
キシヤル層が密閉状態で形成できるので、易蒸発
性のHgを含むHg1-x Cdx Teのエピタキシヤ
ル層が組成変動を生じることなく同時に多数枚形
成でき、エピタキシヤル層形成に要するコストが
低下する利点を生じる。 In this way, epitaxial layers can be formed simultaneously on many substrates in a hermetically sealed state, so a large number of Hg 1-x Cd x Te epitaxial layers containing easily evaporable Hg can be formed at the same time without compositional fluctuations. This has the advantage that the cost required for forming an epitaxial layer is reduced.
なお実施例においては支持部材を３個としてそ
の支持部材間に基板を２枚挾んだ状態を示した
が、その他封管の長さを長くして支持部材を多数
設けることで更に多数枚の基板上に同時にエピタ
キシヤル層が形成できる。また基板１４を基板支
持板１５の片面でなく、両面に支持させて２枚の
基板が同時に溶液中に浸漬できるようにしておけ
ば、一層多量製造に適したものとなる。 In the example, three supporting members are used and two substrates are sandwiched between the supporting members, but it is possible to increase the number of substrates by increasing the length of the sealed tube and providing a large number of supporting members. An epitaxial layer can be formed on the substrate at the same time. Further, if the substrate 14 is supported on both sides of the substrate support plate 15 instead of on one side so that the two substrates can be immersed in the solution at the same time, it becomes even more suitable for mass production.
(g) 発明の効果
以上述べたように本発明の液相エピタキシヤル
成長装置によれば、易蒸発性のHgを含む化合物
半導体のエピタキシヤル層が密閉状態で形成され
るので、組成の安定したエピタキシヤル層が得ら
れ、また同一の工程でエピタキシヤル結晶を有す
る基板が一度に多数枚形成できる利点を有する。(g) Effects of the Invention As described above, according to the liquid phase epitaxial growth apparatus of the present invention, an epitaxial layer of a compound semiconductor containing Hg, which is easily evaporated, is formed in a sealed state. It has the advantage that an epitaxial layer can be obtained and that a large number of substrates having epitaxial crystals can be formed at once in the same process.
第１図は従来の液相エピタキシヤル成長装置を
示す斜視図、第２図、第３図は本発明の液相エピ
タキシヤル成長装置を示す斜視図およびその要部
の断面図である。
図において１は加熱炉、２は反応管、３はアン
プル、４，１４はCdTe基板、５，１６はHg1-x
Cdx Teの材料、１１は封管、１２Ａ，１２
Ｂ，１２Ｃは支持部材、１３は凹所、１５は支持
板、１７は石英棒、Ａは炉の中心、Ｂ，Ｃ，Ｄは
回転方向を示す矢印、Ｅは端部である。
FIG. 1 is a perspective view showing a conventional liquid phase epitaxial growth apparatus, and FIGS. 2 and 3 are a perspective view and a sectional view of a main part thereof, showing the liquid phase epitaxial growth apparatus of the present invention. In the figure, 1 is a heating furnace, 2 is a reaction tube, 3 is an ampoule, 4 and 14 are CdTe substrates, and 5 and 16 are Hg 1-x
Cd x Te material, 11 is sealed tube, 12A, 12
B and 12C are support members, 13 is a recess, 15 is a support plate, 17 is a quartz rod, A is the center of the furnace, B, C, and D are arrows indicating the rotation direction, and E is an end.
Claims (1)
間部を隔てて収容された複数の円柱状の支持部材
とよりなり、該円柱状の支持部材の互いに対向す
る面上の直径線を外れた位置に設けた凹所間でエ
ピタキシヤル成長用基板を挟持するとともに、前
記支持部材の凹所で挟持された複数の基板の下方
の空間部にエピタキシヤル層形成材料を収容した
ことを特徴とする液相エピタキシヤル成長装置。1 Consisting of a heat-resistant sealed tube and a plurality of cylindrical support members inscribed in the heat-resistant sealed tube and housed with a predetermined space apart, the diameter lines on mutually opposing surfaces of the cylindrical support members The substrate for epitaxial growth is sandwiched between the recesses provided at positions apart from the support member, and the epitaxial layer forming material is accommodated in the space below the plurality of substrates sandwiched between the recesses of the support member. Features of liquid phase epitaxial growth equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22102482A JPS59111995A (en) | 1982-12-15 | 1982-12-15 | Device for liquid-phase epitaxial phase |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22102482A JPS59111995A (en) | 1982-12-15 | 1982-12-15 | Device for liquid-phase epitaxial phase |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59111995A JPS59111995A (en) | 1984-06-28 |
| JPH027918B2 true JPH027918B2 (en) | 1990-02-21 |
Family
ID=16760287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22102482A Granted JPS59111995A (en) | 1982-12-15 | 1982-12-15 | Device for liquid-phase epitaxial phase |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59111995A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4704258A (en) * | 1986-04-01 | 1987-11-03 | Grumman Aerospace Corporation | Method and apparatus for growth of single crystal material in space |
| JPS6330395A (en) * | 1986-07-23 | 1988-02-09 | Nec Corp | Method and jig for growing thin film crystal |
-
1982
- 1982-12-15 JP JP22102482A patent/JPS59111995A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59111995A (en) | 1984-06-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH027918B2 (en) | ||
| JPS5846195B2 (en) | Manufacturing method of contact type image sensor | |
| JPH0625955Y2 (en) | Liquid phase epitaxial growth system | |
| JPH0516222Y2 (en) | ||
| JPS5913697A (en) | Liquid phase epitaxial growth device | |
| JPS5976433A (en) | Liquid phase epitaxial growth apparatus | |
| JPH01201094A (en) | Method for liquid-phase epitaxial growth | |
| JPS5921029A (en) | Liquid phase epitaxial growth device | |
| JPH0338736B2 (en) | ||
| JPH03204923A (en) | Manufacture of compound semiconductor crystal | |
| JPS634627A (en) | Jig for liquid phase epitaxial crystal growth | |
| JPS63236788A (en) | Production of melt for epitaxial growth | |
| JPH0278233A (en) | Liquid-phase epitaxial growth method and device therefor | |
| JPS5950532A (en) | Liquid epitaxial growth device | |
| US4774904A (en) | Multiple-layer growth of plural semiconductor devices | |
| JPH0247436B2 (en) | EKISOEPITAKISHARUSEICHOSOCHI | |
| JPH0451970B2 (en) | ||
| JPS5918644A (en) | Liquid phase epitaxial growth apparatus | |
| JPH0129242Y2 (en) | ||
| JPS58212142A (en) | Liquid phase epitaxially growth method | |
| JPH0536732A (en) | Jig for liquid phase epitaxial crystal growth and manufacture of multi-component semiconductor crystal using this jig | |
| JPH01122991A (en) | Apparatus for production of melt for epitaxial growth | |
| JPH0260226B2 (en) | ||
| JPS62214627A (en) | Liquid phase epitaxial growth process | |
| JPS63137436A (en) | Liquid phase epitaxial growing system |