JPS59109164U - semiconductor equipment - Google Patents

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の半導体装置の構成例を示す断面図、第２
図ａおよび第２図すは、それぞれ従来の発光素子の断面
図、第３図は本考案の半導体装置の一実施例の構成を示
す断面図、第４図ａないし第４図Ｃは、それぞれ第３図
の半導体装置の製造工程を説明するための図である。 １３・・・発光素子部、１４・・・受光素子部、１５・
・・接合部、１６・・・金属材料、１７・・・接合周辺
、２゜・・・半導体基板、２１・・・ｎ層、２２川溝、
２５・・・拡散防止膜、２６・・・亜鉛、２７・・・発
光素子部のＰ層、２８・・・受光素子部のＰ層、２ｉ・
・・絶縁膜、３０゜３１・・・端子、３２・・・反射膜
。Figure 1 is a cross-sectional view showing an example of the configuration of a conventional semiconductor device;
Figures a and 2 are sectional views of a conventional light emitting element, Figure 3 is a sectional view showing the structure of an embodiment of the semiconductor device of the present invention, and Figures 4a to 4c are respectively sectional views of a conventional light emitting element. 4 is a diagram for explaining the manufacturing process of the semiconductor device of FIG. 3. FIG. 13... Light emitting element section, 14... Light receiving element section, 15.
... Junction part, 16... Metal material, 17... Junction periphery, 2°... Semiconductor substrate, 21... N layer, 22 River groove,
25... Diffusion prevention film, 26... Zinc, 27... P layer of light emitting element part, 28... P layer of light receiving element part, 2i.
...Insulating film, 30°31...Terminal, 32...Reflecting film.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 同一半導体基板上の発光素子部と受光素子部または、そ
の他の能動素子部の間に溝を形成し、この溝の壁面に金
属材料による反射膜を形成してなることを特徴とする半
導体装置。1. A semiconductor device characterized in that a groove is formed between a light emitting element part and a light receiving element part or other active element part on the same semiconductor substrate, and a reflective film made of a metal material is formed on the wall surface of the groove.