JPS59128756U - semiconductor laser equipment - Google Patents

semiconductor laser equipment

Info

Publication number
JPS59128756U
JPS59128756U JP2320283U JP2320283U JPS59128756U JP S59128756 U JPS59128756 U JP S59128756U JP 2320283 U JP2320283 U JP 2320283U JP 2320283 U JP2320283 U JP 2320283U JP S59128756 U JPS59128756 U JP S59128756U
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser equipment
light
utility
registration request
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2320283U
Other languages
Japanese (ja)
Other versions
JPH0121572Y2 (en
Inventor
浜田　弘基
Original Assignee
三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Priority to JP2320283U priority Critical patent/JPS59128756U/en
Publication of JPS59128756U publication Critical patent/JPS59128756U/en
Application granted granted Critical
Publication of JPH0121572Y2 publication Critical patent/JPH0121572Y2/ja
Granted legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来例を示す断面図、第２図は本考案の一実施
例を示す断面図である。 ２１・・・半導体レーザ素子、２２ａ、２２ｂ・・・共
振器面（光取出面）、２６・・・受光素子。FIG. 1 is a sectional view showing a conventional example, and FIG. 2 is a sectional view showing an embodiment of the present invention. 21... Semiconductor laser element, 22a, 22b... Cavity surface (light extraction surface), 26... Light receiving element.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体レーザ素子、該発光素子の光取出面に形成された
アモルファス材料からなる受光素子で構成されることを
特徴とする半導体レーザ装置。1. A semiconductor laser device comprising a semiconductor laser element and a light receiving element made of an amorphous material formed on a light extraction surface of the light emitting element.
JP2320283U 1983-02-18 1983-02-18 semiconductor laser equipment Granted JPS59128756U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2320283U JPS59128756U (en) 1983-02-18 1983-02-18 semiconductor laser equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2320283U JPS59128756U (en) 1983-02-18 1983-02-18 semiconductor laser equipment

Publications (2)

Publication Number Publication Date
JPS59128756U true JPS59128756U (en) 1984-08-30
JPH0121572Y2 JPH0121572Y2 (en) 1989-06-27

Family

ID=30154289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2320283U Granted JPS59128756U (en) 1983-02-18 1983-02-18 semiconductor laser equipment

Country Status (1)

Country Link
JP (1) JPS59128756U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6218079A (en) * 1985-07-17 1987-01-27 Matsushita Electric Ind Co Ltd Optical integrated circuit device
JP2015518280A (en) * 2012-04-23 2015-06-25 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ Semiconductor laser light source having an edge-emitting semiconductor body

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6218079A (en) * 1985-07-17 1987-01-27 Matsushita Electric Ind Co Ltd Optical integrated circuit device
JP2015518280A (en) * 2012-04-23 2015-06-25 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ Semiconductor laser light source having an edge-emitting semiconductor body

Also Published As

Publication number Publication date
JPH0121572Y2 (en) 1989-06-27

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