JPS5574190A - Photoelectro-converting semiconductor device - Google Patents

Photoelectro-converting semiconductor device

Info

Publication number
JPS5574190A
JPS5574190A JP14805078A JP14805078A JPS5574190A JP S5574190 A JPS5574190 A JP S5574190A JP 14805078 A JP14805078 A JP 14805078A JP 14805078 A JP14805078 A JP 14805078A JP S5574190 A JPS5574190 A JP S5574190A
Authority
JP
Japan
Prior art keywords
light
receiving
emitting
receiving portion
mesa
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14805078A
Other languages
Japanese (ja)
Inventor
Takuro Ishikura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP14805078A priority Critical patent/JPS5574190A/en
Publication of JPS5574190A publication Critical patent/JPS5574190A/en
Pending legal-status Critical Current

Links

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE: To integrate light emitting and light receiving and to miniaturize the device by providing a light-emitting portion and a light-receiving portion on the same semiconductor sybstrate with a distance being provided between both portions.
CONSTITUTION: An n-type GaAs0.62P0.38 layer 2 which indicates direct transition is epitaxially grown on an n-type GaAs semiconductor substrate 1. The epitaxial layer 2 is covered by a mask, and a Zn diffusion layer 3 is formed to make an LED. Then, the masked portion covering a light-receiving portion which is separated from a light-emitting portion on the same semiconductor substrate is etched out, and Zn is diffused into the light-receiving portion 4, thereby a light-receiving diode is formed. In order to minimize the reception of the light that is emitted by the light-emitting portion, transmitted through the semiconductor, and reached the light-receiving portion, the semiconductor material around the LED or light-receiving diode is etched out and a mesa portion is formed. A non-transparent screening film 5 is formed at the mesa-etched portion.
COPYRIGHT: (C)1980,JPO&Japio
JP14805078A 1978-11-29 1978-11-29 Photoelectro-converting semiconductor device Pending JPS5574190A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14805078A JPS5574190A (en) 1978-11-29 1978-11-29 Photoelectro-converting semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14805078A JPS5574190A (en) 1978-11-29 1978-11-29 Photoelectro-converting semiconductor device

Publications (1)

Publication Number Publication Date
JPS5574190A true JPS5574190A (en) 1980-06-04

Family

ID=15444016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14805078A Pending JPS5574190A (en) 1978-11-29 1978-11-29 Photoelectro-converting semiconductor device

Country Status (1)

Country Link
JP (1) JPS5574190A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59109164U (en) * 1983-01-14 1984-07-23 沖電気工業株式会社 semiconductor equipment
JPS61117883A (en) * 1984-11-14 1986-06-05 松下電工株式会社 Multilayer printed wiring board
US5061974A (en) * 1988-12-28 1991-10-29 Ricoh Company, Ltd. Semiconductor light-emitting device of array type
US5101246A (en) * 1988-12-08 1992-03-31 Ricoh Company, Ltd. Photo-functional device
US5365101A (en) * 1990-08-31 1994-11-15 Sumitomo Electric Industries, Ltd. Photo-sensing device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216988A (en) * 1975-07-28 1977-02-08 Philips Nv Reversible photoelectric device
JPS52149078A (en) * 1976-06-04 1977-12-10 Toshiba Corp Light semiconductor element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216988A (en) * 1975-07-28 1977-02-08 Philips Nv Reversible photoelectric device
JPS52149078A (en) * 1976-06-04 1977-12-10 Toshiba Corp Light semiconductor element

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59109164U (en) * 1983-01-14 1984-07-23 沖電気工業株式会社 semiconductor equipment
JPS61117883A (en) * 1984-11-14 1986-06-05 松下電工株式会社 Multilayer printed wiring board
JPH0570953B2 (en) * 1984-11-14 1993-10-06 Matsushita Electric Works Ltd
US5101246A (en) * 1988-12-08 1992-03-31 Ricoh Company, Ltd. Photo-functional device
US5061974A (en) * 1988-12-28 1991-10-29 Ricoh Company, Ltd. Semiconductor light-emitting device of array type
US5365101A (en) * 1990-08-31 1994-11-15 Sumitomo Electric Industries, Ltd. Photo-sensing device

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