JPS5857871A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPS5857871A JPS5857871A JP56156286A JP15628681A JPS5857871A JP S5857871 A JPS5857871 A JP S5857871A JP 56156286 A JP56156286 A JP 56156286A JP 15628681 A JP15628681 A JP 15628681A JP S5857871 A JPS5857871 A JP S5857871A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- state image
- image pickup
- transparent
- base plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Abstract
Description
【発明の詳細な説明】
本発−は固体撮像装置Ｏ改良に係わり、特に同体撮１ｍ
素子を保−するための高信頼性てかつ低価格のパッケー
ジング構造に関する％Ｏである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the improvement of a solid-state imaging device O, and in particular to solid-state imaging of 1m.
%O for a highly reliable and low cost packaging structure to protect the device.
一般ＫＣＣＤ−？Ｍ０８等の局体蜂像素子ね、そのＩＰ
＃性管土管十分揮しかつ信頼性掘保のためＫは外界′Ｉ
ＩＩ！ｌ気から遮断して保額することが必要である。General KCCD-? Local bee image element such as M08, its IP
＃K is the outside world for sufficient excavation and reliable excavation and maintenance of earthen pipes.
II! It is necessary to protect yourself and protect yourself from the elements.
又、固体撮像素子は外部からの元情報を検知するもので
あるから、元情報が素子の受光１１１に正確に送られな
ければならない。Furthermore, since the solid-state image sensor detects original information from the outside, the original information must be accurately sent to the light receiver 111 of the element.
このような条件を満１＆させるためのパッケージング方
法を用いた一体撮像装置は、従来１１１図又は第２図の
よ５に構賊嘔れている。Ｍｉｌｌにおいて、１Ｆｉセラ
ミツク等て成形された基板、２は固体撮像素子、３は素
子と外部回路とｔ電気的に結合する導電性リード、４は
固体撮像素子２の受光面に元情報を伝えるための透明平
板で一般にはガラス板が用いられる。基［１と透明平１
４とて囲まれて成る中空ｉｉ１分内には、固体撮像素子
２、固体撮像素子２上の電極５および固体撮像素子２と
導電性リード３とを接続するボンディングワイヤ６の酸
化防止や水分等による腐食防止Ｏ目的で、一般に電素ガ
ス等の不活性ガスが充ｔ１４ちれている。An integrated imaging device using a packaging method that satisfies these conditions has conventionally been developed as shown in FIG. 111 or FIG. 2. In Mill, a substrate molded from 1Fi ceramic or the like, 2 is a solid-state image sensor, 3 is a conductive lead that electrically couples the element to an external circuit, and 4 is for transmitting original information to the light-receiving surface of the solid-state image sensor 2. A glass plate is generally used as a transparent flat plate. base [1 and transparent flat 1
In the hollow ii1 minute surrounded by the solid-state imaging device 2, the solid-state imaging device 2, the electrode 5 on the solid-state imaging device 2, and the bonding wire 6 connecting the solid-state imaging device 2 and the conductive lead 3 are protected against oxidation, moisture, etc. In order to prevent corrosion due to oxidation, it is generally filled with an inert gas such as an electric gas.
一方、固体撮像素子２は一般に２００〜２５０℃以上の
高温に加熱されると破壊されるため、基板と透明平板と
１低融点ガラスでに接シールすることがで自ない。この
ため、予め金属リング１１基板１および透鴫平１１４に
個々に低融点ガラス８で接着し”ＩＰ暑、基１１１に固
体ｍｕｇ子２１１４ ｄｉ ンゲイングし、導を性リー
ド島と固体撮像素子２との間をボンディングワイヤ６で
接続し＊ ｉｉＥ ％ Ａ ト１ｎ ａムｕ−８１等Ｏ
軟ろう材８９金属リング１関には名み、局部的に加熱し
て気密シール１行っている。On the other hand, since the solid-state imaging device 2 is generally destroyed when heated to a high temperature of 200 to 250° C. or higher, it is not possible to seal the substrate, the transparent flat plate, and the low melting point glass together. For this purpose, the metal ring 11 is individually bonded to the substrate 1 and the transparent glass plate 114 with low-melting glass 8, and then the solid glass plate 2114 is attached to the substrate 111 in advance to connect the lead island and the solid-state image sensor 2. Connect between them with bonding wire 6*
The soft filler metal 89 metal ring 1 is heated locally to create an airtight seal.
こＯよ５）＆パッケージング構造の場合、気密シールの
丸め外部からの水分、各種ガスの侵入を５！盆に防止で
きるため、長寿命で高侭ＩＩｌ性ＯＥ１体撮像装置ｔ′
４＠ることができる。しかし、このような装置ではシー
ル部分の構造が複雑である九めにシール作業工１１か多
くて作業性が悪く、ま危金属リング、金糸ろう材の費用
が高い等Ｏ問題があル１．クツケージングコストが極め
て高いという欠点１有している。5) & In the case of packaging structure, the airtight seal is rounded to prevent moisture and various gases from entering from the outside! It is a long-life and high-quality OE single-body imaging device because it can prevent damage.
4＠Can be done. However, in such a device, there are problems such as the structure of the sealing part is complicated, the number of sealing workers is large, the workability is poor, and the cost of the dangerous metal ring and gold thread brazing material is high. One drawback is that the packaging cost is extremely high.
第２図は別の従来方式Ｏ固体撮像装置である。FIG. 2 shows another conventional type O solid-state imaging device.
こＯ場合には、基ＩＩＩと透明平１１４とｔ肩砿接層剤
１０でシールしている。中空部分にａｌＲ１図の場合と
同様に不活性ガスが充填されている。この固体撮像ｓｍ
＃ｉ構造が簡単でシールｏｔｙｓｉがし易く、パンケー
ジングコスＦが極めて安いという長７９ｉを有している
。しかし、有機接着剤１０を通って、水分子各種ガスが
外部から内部へ侵入すＪｌえめ気ＩＩ性か悪く、寿命及
び信Ｉｌｌ性が劣るという欠点を有している。％に水分
が侵入して露点に達し光場合、透明平碩のＦ１３面に結
露して外から固体撮像原子への正確な党情＠Ｃ＠違が妨
げられるという致命的な障害が発生し易い。Ｗ機縁着剤
の代シにポリ塩化ビニリデン樹脂のような透ｌｌ皐の極
めて小さい有機物を用いれば、気ｍ性は著しく改善され
るが、基板やガラスとの接着性か悪いために寮用できな
いという間１１１がある。In this case, the base III, the transparent flat plate 114, and the T-layer adhesive 10 are used for sealing. The hollow part is filled with inert gas as in the case of alR1 diagram. This solid-state imaging sm
#i It has a length of 79i, with a simple structure, easy sealing, and an extremely cheap pancasing cost. However, it has disadvantages in that water molecules and various gases enter from the outside into the inside through the organic adhesive 10, resulting in poor corrosion resistance and poor service life and reliability. When moisture enters the lens and reaches the dew point, a fatal problem can easily occur where dew condenses on the transparent F13 surface and prevents accurate transmission of information from the outside to the solid-state imaging atoms. . If an organic substance with a very small transparency such as polyvinylidene chloride resin is used as a substitute for the W-edge adhesive, the air resistance can be significantly improved, but it cannot be used in dormitories because of its poor adhesion to substrates and glass. There is 111 between them.
本発明は従来のこのような欠点を解消するものであり、
その目的とするところは長寿命、高個幀性かつ低価格の
バンクージング構造ｔ−有する固体撮像装置を提供する
ことにある。The present invention solves these conventional drawbacks,
The objective is to provide a solid-state imaging device having a long life, high individuality, and low cost having a bankous structure.
このような目的を達成するためには、予め固体撮像装置
を基板にダイボンデインクし、さらにワイヤポジディン
グｔした後の中空部分に透明の物質ｔ−充填させるもの
である。To achieve this purpose, the solid-state imaging device is die-bonded to the substrate in advance, and the hollow portion after wire-positing is filled with a transparent material.
この構造によれば、中辛部分は気体以外の物質で隙間な
く充填されているために外部から内部、へＯ水分や各種
ガスの侵入はほとんどなく、たとえ中の物質がｌＩｋ渥
しても透明平板の内１１ｉＫ結露することはなく、又、
構造も単純で使用材料も低価格である。According to this structure, the middle part is filled with substances other than gas without any gaps, so there is almost no intrusion of moisture or various gases from the outside to the inside, and even if the substance inside is spilled, it is transparent. There is no condensation of 11iK inside the flat plate, and
The structure is simple and the materials used are inexpensive.
以下本発明の１ｊＩ施例を示す。Hereinafter, 1jI examples of the present invention will be shown.
貢施例１
１８３図に訃いて、ａ１１図、・謁２図と同一部分に状
に未硬化のエポキシ系接着剤１０を塗布した俵、基板の
中！２部分に透明、な未硬化のシリコーンゲル１１’ｌ
注入した。己かる後に・ガラス調の透明平板ＪｔＩ＆板
に貼ル合せ、透明子離４と基板１とを密層するように加
圧した状態で１５０℃で１５０分加熱し、シリコーンゲ
ル１１と接着剤１Ｇとを熱硬化させた。なお、硬化後の
シリコーンゲルは、液状の未硬化物からゲル状物質ＫＲ
化した。Tribute example 1: Figure 183, Figure A11, and the same part as Figure 2 of Audience are coated with uncured epoxy adhesive 10 inside the bale and board! 2 parts transparent, uncured silicone gel 11'l
Injected. After self-adhesion: Laminate on glass-like transparent flat plate JtI & plate, heat at 150° C. for 150 minutes under pressure so that transparent film 4 and substrate 1 are layered tightly, and apply silicone gel 11 and adhesive 1G. and was heat-cured. In addition, the silicone gel after curing is changed from a liquid uncured product to a gel-like substance KR.
It became.
このよりにして作製した固体撮像装置０［１１１性試験
を行ったところ、耐湿性試験では透明平ｌｌＯ内ｍに結
露することもなく、２０年以上の使用に耐えるａｍ性を
有していることがわかった。A solid-state imaging device manufactured in accordance with this method was subjected to a 0[111] property test, and in the moisture resistance test, no dew condensation occurred inside the transparent flat 110, and it had the property of being able to withstand use for over 20 years. I understand.
貢−例２
夷ｊｌｌｉＦ１１０未硬化シリコーンゲ身の代）に、透
明の未酸化シリコーンゴム（粘液状）ｔａスし、同じ方
法で熱酸化させた。硬化後のシリコーンゴムはゴム弾性
を有する固体物質であるが、このようにして作製した固
体撮像装置についても、＊麹例１と同様の儒ｍ１ｓｔ有
していることがわかった。Example 2 Transparent unoxidized silicone rubber (viscous) was applied to JlliF110 (uncured silicone material) and thermally oxidized in the same manner. The silicone rubber after curing is a solid material with rubber elasticity, and it was found that the solid-state imaging device thus produced also had the same elasticity m1st as *Koji Example 1.
ＩＩ論例３
１１１４ｗＡＫ示ｔ！５Ｋ、；／Ｊ）ｘｌｌＯａｌｌ平
職４の内１１１６１１Ｋｌａ所の部分に設けた封入口１
２１除いて窓枠状にシール剤として未硬化のエポキシ系
接着剤１０をｍ布した後、基１１１と貼シ合せて両者を
密着するように加圧し、１５０℃で１５０分閏加熱して
接着剤を熱硬化させえ。しかる後５ｓｌｉ！に示すよ５
に、シールしていない注入口１２か６３０重量ＳＯＷ明
なポリ塩化ビニリデンＩＩ！ＩＩ幡練１１１ｔｌＰｑｓ
分に完全に充填した後、凧６図に示すよ５に注入口１２
に未硬化のアクリル系紫外ｍ硬化用振層剤１３１児盆に
シールするように侶け、高圧水銀灯により紫外１１ｔ１
分関Ｗ＠制して完全硬化させた。このようにして作製し
た固体織＊１ｉｉｌｉ＃ｉ％めに耐温性が極めてよく、
２ｓ年以上ｏｔ！用に耐える信Ｉｌ性を有していること
を確認し喪。II Theory Example 3 1114wAK shown! 5K, ;/J)
After applying uncured epoxy adhesive 10 as a sealant to the window frame shape except for 21, paste it with the base 111, pressurize the two so that they are in close contact, and bond by leap heating at 150 ° C. for 150 minutes. Heat cure the agent. After that, 5sli! It is shown in 5
To, unsealed inlet 12 or 630 weight SOW clear polyvinylidene chloride II! II Hatanren 111tlPqs
After filling the kite completely for 6 minutes, fill the inlet 12 to 5 as shown in figure 6.
The uncured acrylic ultraviolet curing agent 131 was sealed in a tray, and exposed to ultraviolet 11t1 using a high-pressure mercury lamp.
I used Bunkan W@ to completely harden it. The solid woven fabric *1iii#i% produced in this way has extremely good temperature resistance,
Over 2s years old! We have confirmed that it has the credibility to withstand its use.
以上実施例はいずれも中空１１分に充填する物質とは別
の箇着削奄用いてシールしているが、中空部分に充鷹す
る物質が接着性Ｏ優れ良物質てあれば、ｑ＃に別の接着
剤を用てシールする必要はなく、一種類の物質で中空部
分への充填とシールを行うことも可能である。In all of the above examples, sealing was performed using a different material than the material filled in the hollow space, but if the material filled in the hollow space is a material with excellent adhesive properties, it would be better to use Q#. It is not necessary to use a separate adhesive for sealing, and it is also possible to fill and seal the hollow portion with one type of substance.
このように、本発明０個体撮像装置によれば、パッケー
ジングコストを従来の気密シール方式のものＣし１以下
にできるとともに、気密シール方式と同じ２０年以上の
０ＩＩｌｔ！Ｉｔを得ることができる。As described above, according to the zero solid imaging device of the present invention, the packaging cost can be reduced to less than 1 compared to the conventional airtight seal type, and the same packaging cost as the airtight seal type can be maintained for more than 20 years! It can be obtained.
第１図は従来の固体撮像装置の構造を示す断面図、ｓｚ
ｍは別の従来の固体撮像装置の構造を示す断ＩｉｉＩＩ
１％１１１３図は本発明の一実施例の固体撮像装置の構
造を示す断！ｊ８、第４ｗＪは他の実施例の透明平極内
面への接着剤塗布状ａｔ示す平面図、一纂５１１は同じ
実施例のポリ塩化ビｘリデシ樹脂濤液の注入状ｉｉ＋を
示す断面図、編６図は同じ実施例のシールされてｂなか
った注入口の部分を完全にシールした状態の断面図であ
る。
１●・●●基板、２・−●●同体撮儂素子、３・●●●
導電性リード、４●●●●透明平穢、Ｓ●●●●％極、
６ｅ●●●ボンデイングワイヤ、１０−−−一有機接着
剤、１１●●●φシリコーンゲル、１１ａ●●●●●ポ
リ塩化ビニリデン＃ｆｉ浴液、１２●●Φ●注入口、１
３・●●一紫外線硬化接着剤。Figure 1 is a cross-sectional view showing the structure of a conventional solid-state imaging device, sz
m is a section III showing the structure of another conventional solid-state imaging device.
Figure 1%1113 is a cross section showing the structure of a solid-state imaging device according to an embodiment of the present invention. j8, 4th wJ is a plan view showing the state of adhesive application on the inner surface of the transparent flat electrode of another example, and one line 511 is a cross-sectional view showing the state of injection of polyvinyl chloride x ride resin solution ii+ of the same example, Figure 6 is a cross-sectional view of the same embodiment, with the part of the inlet that was not sealed completely sealed. 1●・●● board, 2・−●● same body camera element, 3・●●●
Conductive lead, 4●●●●transparent plain, S●●●●% pole,
6e ●●● Bonding wire, 10 - Organic adhesive, 11 ●●●φ silicone gel, 11a ●●●●● Polyvinylidene chloride #fi bath liquid, 12 ●●Φ● Inlet, 1
3.●●1 Ultraviolet curing adhesive.
Claims (1)
ル剤にてシールして曽記基職と透明平板Ｏ間に中空部分
を構成する一体撮像装置において、前記中空部分に＃ｉ
透明な物質管充填しであることを特徴どする一体撮像装
置。 ２ シール剤ね充填する物質を用いること１＊＊とする
特許請求ａＳＳ銀１項記載Ｏ固体操曽装置。[Scope of Claims] 1. In an integrated imaging device in which a peripheral portion of a packaging substrate and a transparent flat plate is sealed with a sealant to form a hollow portion between the packaging substrate and the transparent flat plate O, the hollow portion #i
An integrated imaging device characterized by being filled with a transparent substance tube. 2. The solid state imager according to claim 1, which uses a substance filled with a sealant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56156286A JPS5857871A (en) | 1981-10-02 | 1981-10-02 | Solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56156286A JPS5857871A (en) | 1981-10-02 | 1981-10-02 | Solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5857871A true JPS5857871A (en) | 1983-04-06 |
Family
ID=15624488
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56156286A Pending JPS5857871A (en) | 1981-10-02 | 1981-10-02 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5857871A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6152861A (en) * | 1984-08-24 | 1986-03-15 | 松下電器産業株式会社 | Ultrasonic probe |
| JPS6190258U (en) * | 1984-11-20 | 1986-06-12 | ||
| US5888106A (en) * | 1994-11-30 | 1999-03-30 | Hitachi, Ltd. | Pin contact and electric parts having the same |
| US7235873B2 (en) * | 2001-08-01 | 2007-06-26 | Infineon Technologies Ag | Protective device for subassemblies and method for producing a protective device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5478026A (en) * | 1977-12-05 | 1979-06-21 | Hitachi Ltd | Production of solid color image pickup unit |
| JPS551116A (en) * | 1978-06-16 | 1980-01-07 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS56116649A (en) * | 1980-02-19 | 1981-09-12 | Matsushita Electric Ind Co Ltd | Manufacturing of semiconductor device |
-
1981
- 1981-10-02 JP JP56156286A patent/JPS5857871A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5478026A (en) * | 1977-12-05 | 1979-06-21 | Hitachi Ltd | Production of solid color image pickup unit |
| JPS551116A (en) * | 1978-06-16 | 1980-01-07 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS56116649A (en) * | 1980-02-19 | 1981-09-12 | Matsushita Electric Ind Co Ltd | Manufacturing of semiconductor device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6152861A (en) * | 1984-08-24 | 1986-03-15 | 松下電器産業株式会社 | Ultrasonic probe |
| JPH044895B2 (en) * | 1984-08-24 | 1992-01-29 | ||
| JPS6190258U (en) * | 1984-11-20 | 1986-06-12 | ||
| US5888106A (en) * | 1994-11-30 | 1999-03-30 | Hitachi, Ltd. | Pin contact and electric parts having the same |
| US7235873B2 (en) * | 2001-08-01 | 2007-06-26 | Infineon Technologies Ag | Protective device for subassemblies and method for producing a protective device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4710797A (en) | Erasable and programable read only memory devices | |
| JP3173586B2 (en) | All-mold solid-state imaging device and method of manufacturing the same | |
| JP2008016693A (en) | Method of sealing solid-state imaging device | |
| JPS5857871A (en) | Solid-state image pickup device | |
| JPH0485859A (en) | Airtightly sealed package and bonding member | |
| JP2007249014A (en) | Liquid crystal display device | |
| US11183533B2 (en) | Method for manufacturing curved-surface detector, and curved-surface detector manufactured using the manufacturing method | |
| JPS60136254A (en) | Solid-state image pickup device and manufacture thereof | |
| JPS58127474A (en) | Silid state image pickup device | |
| JPH02229453A (en) | Semiconductor device and manufacture thereof | |
| JPH0311757A (en) | Semiconductor device and manufacture thereof | |
| JPH09186308A (en) | Manufacture of solid-state image pickup module | |
| JPS5869174A (en) | Solid-state image pickup device | |
| JP2005217322A (en) | Semiconductor element for solid-state imaging device and solid-state imaging device using it | |
| JPS6062279A (en) | Solid-state image pickup device | |
| JPH07114291B2 (en) | Optical sensor element | |
| JPS5857870A (en) | Solid-state image pickup device | |
| TWI280648B (en) | Hermetic sealing of image sensor chip | |
| TWI227942B (en) | Image sensor with metal sealing | |
| TWI273686B (en) | Chip-on-glass package of image sensor | |
| TW200539400A (en) | Image sensor package with a FPC surrounding a window | |
| TWI248665B (en) | Image sensor package and method for manufacturing the same | |
| JPS6269674A (en) | Solid-state image pickup device and manufacture of the same | |
| JPH081966B2 (en) | Method of manufacturing LED display element | |
| TWI224841B (en) | Film ball grid array package structure of an image sensor |