TWI280648B - Hermetic sealing of image sensor chip - Google Patents

Hermetic sealing of image sensor chip Download PDF

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Publication number
TWI280648B
TWI280648B TW093141422A TW93141422A TWI280648B TW I280648 B TWI280648 B TW I280648B TW 093141422 A TW093141422 A TW 093141422A TW 93141422 A TW93141422 A TW 93141422A TW I280648 B TWI280648 B TW I280648B
Authority
TW
Taiwan
Prior art keywords
image sensing
gas
wafer
cavity
sealing structure
Prior art date
Application number
TW093141422A
Other languages
Chinese (zh)
Other versions
TW200623358A (en
Inventor
Cheng-Ting Wu
Hui-Ping Liu
Ming-Te Hsia
Wu-Chang Tu
Original Assignee
Chipmos Technologies Inc
Chipmos Technologies Bermuda
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chipmos Technologies Inc, Chipmos Technologies Bermuda filed Critical Chipmos Technologies Inc
Priority to TW093141422A priority Critical patent/TWI280648B/en
Publication of TW200623358A publication Critical patent/TW200623358A/en
Application granted granted Critical
Publication of TWI280648B publication Critical patent/TWI280648B/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

A hermetic sealing of image sensor chip includes a chip carrier with a cavity. A chip-attaching area and a plurality of connecting pads are formed inside the cavity. A transplant plate seals the cavity to form a close space. An image sensor chip and a cleaning material dispose in the cavity. The image sensor chip is attached to the chip-attaching area and electrically connecting with the connecting pads of the substrate. The cleaning material is an adhesive glue for absorbing dusts inside the close space to maintain the sensing quality of the image sensor chip.

Description

五、發明說明（1) 【發明所屬之技術領域】 本發明係有關於一種影像感測晶片之氣閉密封構造， 特別係有關於一種提升影像感測晶片抗濕性之氣閉密封構 造。 、 【先前技術】 隨著數位影像之普及化（universal)，影像感測器 (image sensor)廣泛應用於數位相機、數位攝影機、可照 相式行動電話或其他較為簡易的光學感測用途，如玩具、 光學滑鼠等，而這些產品對使用環境的要求也愈來愈嚴 苛’對其關鍵零件-影像感測曰曰曰片之抵抗濕氣環境的能力 也相對受到重視。 習知之影像感測器封裝構造，如中華民國專利公告第 542493號「影像感測器構造」所揭示者，其包含有一 ^曰片 載體、一凸緣層、一影像感測晶片及一透光層，該影像感 測晶片係設於該凸緣層與該晶片載體所形成之凹槽中，^ 凸緣層之上表面形成有訊號輸入端，以供複數個導線電性 連接該些訊號輸入端與該影像感測晶片，再經由該凸緣層 之側邊電性連接至該晶片載體，該凸緣層之上表面塗佈有 部分之黏著層，以黏著該透光層，將該影像感測晶片密 封，、然而在黏著該透光層之封蓋過程中，仍會將殘存之濕 氣或污染物微塵封包入該凹槽内，而影響影像感 = 感應品質。 、日日月之 【發明内容】 本發明之主要目的在於提供一種影像感測晶片之氣閉 1280648 圖式簡單說明 【圖式簡單說明】 第1圖：依據本發明之第一具體實施例，一種影像感測晶 片之氣閉密封構造之截面示意圖；及 第2 圖：依據本發明之第二具體實施例，一種影像感測晶 片之氣閉密封構造之截面示意圖。 元件符號簡單說明 100影像感測晶片 110晶片載體 113上表面 11 5外導接端 120影像感測晶片 1 3 0清潔物質 1 6 0銲線 200影像感測晶片 210晶片載體 213 上表面 21 5黏晶區 220影像感測晶片 230清潔物質 260銲線 之氣閉密封構造 111 容晶穴 114 下表面 11 6黏晶區 121 主動面 140 透光片 之氣閉密封構造 211 容晶穴 214 下表面 216連接墊 221 主動面 240透光片 112攔壩 117連接墊 122銲墊 150黏晶膠 Φ 212攔壩 222銲墊 250黏晶膠 Φ5. Description of the Invention (1) Technical Field of the Invention The present invention relates to a hermetic sealing structure for an image sensing wafer, and more particularly to a hermetic sealing structure for improving image moisture resistance of an image sensing wafer. [Prior Art] With the popularity of digital images, image sensors are widely used in digital cameras, digital cameras, camera phones, or other relatively simple optical sensing applications, such as toys. , optical mouse, etc., and these products are becoming more and more demanding on the environment. The ability of their key parts-image sensing cymbals to resist the moisture environment is also relatively important. A conventional image sensor package structure, such as disclosed in the "Image Sensor Construction" of the Republic of China Patent Publication No. 542493, which comprises a carrier, a flange layer, an image sensing chip and a light transmission. a layer, the image sensing chip is disposed in the groove formed by the flange layer and the wafer carrier, and a signal input end is formed on the upper surface of the flange layer for electrically connecting the plurality of wires to the signal input And the image sensing wafer is electrically connected to the wafer carrier via a side of the flange layer, and a surface of the flange layer is coated with a partial adhesive layer to adhere the light transmissive layer to the image. The wafer seal is sensed, however, during the process of attaching the light-transmissive layer, residual moisture or contaminant dust is still encapsulated into the groove, which affects the image sense=inductive quality. [Draft] The main object of the present invention is to provide a gas sensing of an image sensing wafer 1280648. Brief description of the drawing [Simplified description of the drawing] FIG. 1 : According to a first embodiment of the present invention, A cross-sectional view of a gas-tight sealing structure of an image sensing wafer; and a second schematic view of a gas-tight sealing structure of an image sensing wafer according to a second embodiment of the present invention. Element symbol simple description 100 image sensing wafer 110 wafer carrier 113 upper surface 11 5 outer guiding end 120 image sensing wafer 1 30 cleaning material 1 60 bonding wire 200 image sensing wafer 210 wafer carrier 213 upper surface 21 5 sticky Crystal region 220 image sensing wafer 230 cleaning material 260 wire sealing gas sealing structure 111 Rongjing hole 114 lower surface 11 6 sticky crystal region 121 active surface 140 transparent sheet gas sealing structure 211 cavity 214 lower surface 216 Connection pad 221 active surface 240 light transmissive sheet 112 dam 117 connection pad 122 solder pad 150 adhesive crystal Φ 212 dam 222 solder pad 250 adhesive crystal Φ

第12頁Page 12

Claims (1)

12806481280648 【申請專利範圍】 1、一種影像感測晶片之氣閉密封構造，包含： 一晶片載體’其係具有一容晶穴以及一在該容晶穴内 之上表面，該晶片載體於該容晶穴内係形成有一黏晶區與 複數個連接墊； 一影像感測晶片，其係結合於該黏晶區，該影像感測 晶片係與該些連接塾電性連接； 一透光片’其係密封該容晶穴，使得該容晶穴形成一 氣閉密封空間；及[Scope of Application] 1. A gas-tight sealing structure for an image sensing wafer, comprising: a wafer carrier having a cavity and an upper surface in the cavity, the wafer carrier being in the cavity Forming a die-bonding region and a plurality of connecting pads; an image sensing wafer coupled to the die-bonding region, the image sensing chip is electrically connected to the connecting wires; and a light-transmissive sheet is sealed The cavity is formed such that the cavity is formed into a gas-tight sealed space; • 一清潔物質’其係位於該容晶穴内以及在該黏晶區與 該容晶穴之一内側壁之間並且貼附於該上表面，該清潔物 質係為具有黏性之膠體，以黏附該氣閉密封空間内之微 塵。 2、 如申請專利範圍第丨項所述之影像感測晶片之氣閉密 封構造，其中該清潔物質係具有吸濕性。 3、 如申請專利範圍第2項所述之影像感測晶片之氣閉密 封構造’其中該清潔物質係包含無機氧化物。• a cleaning substance that is located in the cavity and between the die bond and one of the inner walls of the cavity, and attached to the upper surface, the cleaning material being a viscous gel for adhesion The gas seals the dust in the sealed space. 2. The hermetic sealing structure of the image sensing wafer of the invention of claim 2, wherein the cleaning material is hygroscopic. 3. The gas-tight sealing structure of the image sensing wafer of claim 2, wherein the cleaning material comprises an inorganic oxide. 4、 如申請專利範圍第1項所述之影像感測晶片之氣閉密 封構造’其中該清潔物質係設於該黏晶區與該容晶穴之一 内侧璧之間。 5、 如申請專利範圍第4項所述之影像感測晶片之氣閉密 封構造’其中該清潔物質係以塗佈方式形成。 6、 如申請專利範圍第1項所述之影像感測晶片之氣閉密 封構造’其中該清潔物質係設於該黏晶區與該些連接墊之4. The gas-tight sealing structure of the image sensing wafer of claim 1, wherein the cleaning material is disposed between the die-bonding region and one of the inner sides of the cavity. 5. The gas-tight sealing structure of the image sensing wafer of claim 4, wherein the cleaning material is formed by coating. 6. The gas-tight sealing structure of the image sensing wafer of claim 1, wherein the cleaning material is disposed in the die bonding region and the connection pads 第13頁 1280648Page 13 1280648 1L月〆曰 修正 I號 93141422 六、申請專利範圍 間。 7、 如申請專利範圍第6堪& β七 .,^ ^ ^ 員所述之影像感測晶片之氣閉被 封構造’其中該清潔物質你 a μ ^ ^ 負係从貼帶（film)方式貼附於該晶 月載體。 ， 8、 如申請專利範圍第6頊邮^ ^ a ^ 封構造，•中該清潔物質以；=測晶片之氣閉密 二ΐ申ίΐΐϊΠ1項所述之影像感測晶片之氣閉密 封構造，其中該晶片載體係' 1糸包含有一電路基板以及一攔 1 0、如申請專利範圍第9頊肖 封構造，纟中該電路基板之影像感測晶片之氣閉密 面，该清潔物質覆蓋該^基f 一在該容晶穴内之上表 U、如申請專利範圍第之顯露上表面。 封構造，#中該晶片載體传影像感測晶片之氣閉密 架。 為一包含有預模膠體之導線 12、如申請專利範圍第1頊祕、+、 封_，$中該晶影像感測晶片之氣閉密 <下表面係設置有複數個外導接 ° 1 3、妒申請專利範圍第1頊辦、+、 封構造，以該透光片係則測晶片之氣閉密 14、如申請專利範圍第1頊辦、+、> 封構造 '其中該透光片係為_斤=像感測晶片之氣閉密 v 现月 Q lens)。1L 〆曰 修正 Amendment I No. 93141422 VI. Scope of application for patents. 7. If the patent application scope is 6th & beta VII, the ^ ^ ^ ^ member of the image sensing wafer is closed by the gas seal structure 'where the cleaning substance you a μ ^ ^ negative system from the film (film) The method is attached to the crystal carrier. 8. If the scope of the patent application is 6 顼 ^ ^ ^ ^ ^ 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封The wafer carrier system includes a circuit substrate and a barrier 10, as disclosed in the ninth aspect of the patent application, wherein the image sensing chip of the circuit substrate has a gas-tight surface, and the cleaning material covers the ^Base f is above the surface of the cavity, as shown in the patent application scope. In the sealing structure, the wafer carrier transmits an image blocking wafer of the wafer carrier. The wire 12 including the pre-molded gel, as in the patent application, the first secret, the +, the seal, the gas-tightness of the crystal image sensing wafer is provided with a plurality of outer guides. 1 3, 妒 apply for the scope of patents, the first, the +, the seal structure, the light-transmissive film system to measure the gas tightness of the wafer 14, as claimed in the patent scope, the first, the +, > The light-transmissive film is _ _ = the air-tightness of the image sensing wafer.
TW093141422A 2004-12-30 2004-12-30 Hermetic sealing of image sensor chip TWI280648B (en)

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TWI280648B true TWI280648B (en) 2007-05-01

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI819452B (en) * 2021-12-30 2023-10-21 同欣電子工業股份有限公司 Sensor package structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI819452B (en) * 2021-12-30 2023-10-21 同欣電子工業股份有限公司 Sensor package structure

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