JPS58215081A - アモルフアスシリコン太陽電池 - Google Patents

アモルフアスシリコン太陽電池

Info

Publication number: JPS58215081A
Authority: JP; Japan
Prior art keywords: electrodes; hollow body; amorphous silicon; spacer; substrate
Prior art date: 1982-06-08
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP57096908A

Other languages

English (en)

Japanese (ja)

Other versions

JPH0473305B2 (de

Inventor

Nobuhiro Fukuda

福田　信弘

Sadao Kobayashi

貞雄小林

Yutaka Ohashi

豊大橋

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Mitsui Toatsu Chemicals Inc

Original Assignee

Mitsui Toatsu Chemicals Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1982-06-08

Filing date

1982-06-08

Publication date

1983-12-14

1982-06-08 Application filed by Mitsui Toatsu Chemicals Inc filed Critical Mitsui Toatsu Chemicals Inc

1982-06-08 Priority to JP57096908A priority Critical patent/JPS58215081A/ja

1983-12-14 Publication of JPS58215081A publication Critical patent/JPS58215081A/ja

1992-11-20 Publication of JPH0473305B2 publication Critical patent/JPH0473305B2/ja

Status Granted legal-status Critical Current

Links

229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 25
239000000758 substrate Substances 0.000 claims abstract description 23
125000006850 spacer group Chemical group 0.000 claims abstract description 13
239000007789 gas Substances 0.000 claims description 12
239000011261 inert gas Substances 0.000 claims description 4
239000000853 adhesive Substances 0.000 abstract description 12
230000001070 adhesive effect Effects 0.000 abstract description 12
238000006243 chemical reaction Methods 0.000 abstract description 10
239000000463 material Substances 0.000 abstract description 10
238000000034 method Methods 0.000 abstract description 8
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 8
229920005989 resin Polymers 0.000 abstract description 6
239000011347 resin Substances 0.000 abstract description 6
238000010248 power generation Methods 0.000 abstract description 5
238000010438 heat treatment Methods 0.000 abstract description 4
239000011248 coating agent Substances 0.000 abstract description 3
238000000576 coating method Methods 0.000 abstract description 3
239000011521 glass Substances 0.000 abstract description 3
230000007423 decrease Effects 0.000 abstract description 2
238000001035 drying Methods 0.000 abstract 2
230000008595 infiltration Effects 0.000 abstract 1
238000001764 infiltration Methods 0.000 abstract 1
150000003377 silicon compounds Chemical class 0.000 description 5
230000015572 biosynthetic process Effects 0.000 description 4
239000007772 electrode material Substances 0.000 description 4
239000003822 epoxy resin Substances 0.000 description 4
229920000647 polyepoxide Polymers 0.000 description 4
238000005979 thermal decomposition reaction Methods 0.000 description 4
239000010409 thin film Substances 0.000 description 4
-1 511(4 Chemical class 0.000 description 3
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical class [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
238000000354 decomposition reaction Methods 0.000 description 3
238000000151 deposition Methods 0.000 description 3
239000012535 impurity Substances 0.000 description 3
239000002994 raw material Substances 0.000 description 3
238000007599 discharging Methods 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
229910000077 silane Inorganic materials 0.000 description 2
229920002050 silicone resin Polymers 0.000 description 2
XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
229910001887 tin oxide Inorganic materials 0.000 description 2
UKUVVAMSXXBMRX-UHFFFAOYSA-N 2,4,5-trithia-1,3-diarsabicyclo[1.1.1]pentane Chemical compound S1[As]2S[As]1S2 UKUVVAMSXXBMRX-UHFFFAOYSA-N 0.000 description 1
239000004925 Acrylic resin Substances 0.000 description 1
229920000178 Acrylic resin Polymers 0.000 description 1
239000000654 additive Substances 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
210000000078 claw Anatomy 0.000 description 1
239000004020 conductor Substances 0.000 description 1
230000003247 decreasing effect Effects 0.000 description 1
230000008021 deposition Effects 0.000 description 1
230000006866 deterioration Effects 0.000 description 1
238000010586 diagram Methods 0.000 description 1
239000010408 film Substances 0.000 description 1
LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
230000001678 irradiating effect Effects 0.000 description 1
WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
239000000113 methacrylic resin Substances 0.000 description 1
230000001590 oxidative effect Effects 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
239000001301 oxygen Substances 0.000 description 1
230000035515 penetration Effects 0.000 description 1
239000012466 permeate Substances 0.000 description 1
239000004033 plastic Substances 0.000 description 1
229920003023 plastic Polymers 0.000 description 1
229920000728 polyester Polymers 0.000 description 1
239000005060 rubber Substances 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1
230000006641 stabilisation Effects 0.000 description 1
238000011105 stabilization Methods 0.000 description 1
150000003606 tin compounds Chemical class 0.000 description 1
238000007738 vacuum evaporation Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Electromagnetism (AREA)
General Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Photovoltaic Devices (AREA)

JP57096908A 1982-06-08 1982-06-08 アモルフアスシリコン太陽電池 Granted JPS58215081A (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP57096908A JPS58215081A (ja)	1982-06-08	1982-06-08	アモルフアスシリコン太陽電池

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP57096908A JPS58215081A (ja)	1982-06-08	1982-06-08	アモルフアスシリコン太陽電池

Publications (2)

Publication Number	Publication Date
JPS58215081A true JPS58215081A (ja)	1983-12-14
JPH0473305B2 JPH0473305B2 (de)	1992-11-20

Family

ID=14177455

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP57096908A Granted JPS58215081A (ja)	1982-06-08	1982-06-08	アモルフアスシリコン太陽電池

Country Status (1)

Country	Link
JP (1)	JPS58215081A (de)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6030163A (ja) *	1983-07-28	1985-02-15	Fuji Electric Corp Res & Dev Ltd	薄膜太陽電池モジユ−ル
JPS628578A (ja) *	1985-06-04	1987-01-16	シーメンス　ソーラー　インダストリーズ，エル．ピー．	薄膜太陽電池モジュール
US4705911A (en) *	1985-12-05	1987-11-10	Matsushita Electric Industrial Co., Ltd.	Solar cell module
JP2013503993A (ja) *	2009-09-09	2013-02-04	サン−ゴバンパフォーマンスプラスティックスコーポレイション	フルオロポリマー構造膜への光起電力セル取付システム
JP2014511041A (ja) *	2011-04-05	2014-05-01	ユニバーシティーオブフロリダリサーチファウンデーション，インコーポレイテッド	赤外線（ｉｒ）光電池を薄膜光電池上に集積する方法及び装置
JP2015092642A (ja) *	2009-07-08	2015-05-14	トタルマルケタンセルヴィス	多接合及び多電極を有する光起電性電池の製造方法
US10134815B2 (en)	2011-06-30	2018-11-20	Nanoholdings, Llc	Method and apparatus for detecting infrared radiation with gain
US10700141B2 (en)	2006-09-29	2020-06-30	University Of Florida Research Foundation, Incorporated	Method and apparatus for infrared detection and display
US10749058B2 (en)	2015-06-11	2020-08-18	University Of Florida Research Foundation, Incorporated	Monodisperse, IR-absorbing nanoparticles and related methods and devices

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS55141960U (de) *	1979-03-29	1980-10-11

1982
- 1982-06-08 JP JP57096908A patent/JPS58215081A/ja active Granted

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS55141960U (de) *	1979-03-29	1980-10-11

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6030163A (ja) *	1983-07-28	1985-02-15	Fuji Electric Corp Res & Dev Ltd	薄膜太陽電池モジユ−ル
JPH0527278B2 (de) *	1983-07-28	1993-04-20	Fuji Denki Sogo Kenkyusho Kk
JPS628578A (ja) *	1985-06-04	1987-01-16	シーメンス　ソーラー　インダストリーズ，エル．ピー．	薄膜太陽電池モジュール
US4705911A (en) *	1985-12-05	1987-11-10	Matsushita Electric Industrial Co., Ltd.	Solar cell module
US10700141B2 (en)	2006-09-29	2020-06-30	University Of Florida Research Foundation, Incorporated	Method and apparatus for infrared detection and display
JP2015092642A (ja) *	2009-07-08	2015-05-14	トタルマルケタンセルヴィス	多接合及び多電極を有する光起電性電池の製造方法
JP2013503993A (ja) *	2009-09-09	2013-02-04	サン−ゴバンパフォーマンスプラスティックスコーポレイション	フルオロポリマー構造膜への光起電力セル取付システム
JP2014511041A (ja) *	2011-04-05	2014-05-01	ユニバーシティーオブフロリダリサーチファウンデーション，インコーポレイテッド	赤外線（ｉｒ）光電池を薄膜光電池上に集積する方法及び装置
US10134815B2 (en)	2011-06-30	2018-11-20	Nanoholdings, Llc	Method and apparatus for detecting infrared radiation with gain
US10749058B2 (en)	2015-06-11	2020-08-18	University Of Florida Research Foundation, Incorporated	Monodisperse, IR-absorbing nanoparticles and related methods and devices

Also Published As

Publication number	Publication date
JPH0473305B2 (de)	1992-11-20

Publication	Publication Date	Title
Cheacharoen et al.	2018	Encapsulating perovskite solar cells to withstand damp heat and thermal cycling
CN101490852B (zh)	2014-07-30	全密封的非平面太阳能电池
US5626688A (en)	1997-05-06	Solar cell with chalcopyrite absorber layer
US7915517B2 (en)	2011-03-29	Bifacial photovoltaic devices
JPS58216476A (ja)	1983-12-16	光発電蓄電装置
JP5869626B2 (ja)	2016-02-24	基板及びそれを用いた集光能力のある素子
KR20090085324A (ko)	2009-08-07	다층 투명전도층을 구비한 태양전지 이의 제조방법
JPS58215081A (ja)	1983-12-14	アモルフアスシリコン太陽電池
US4705911A (en)	1987-11-10	Solar cell module
JPH05504235A (ja)	1993-07-01	アモルフアス・ゲルマニウムをベースとする光劣化安定性半導体材料とその製造方法
JP3311873B2 (ja)	2002-08-05	半導体薄膜の製造方法
JP2005310821A (ja)	2005-11-04	光電変換素子
JPS57187975A (en)	1982-11-18	Photoelectric converter
JPH0456474B2 (de)	1992-09-08
JPH10214986A (ja)	1998-08-11	光起電力装置およびその製造方法
JPS57143874A (en)	1982-09-06	Manufacture of solar cell
JPS5935016A (ja)	1984-02-25	含水素シリコン層の製造方法
JPS6322633B2 (de)	1988-05-12
JPS5958874A (ja)	1984-04-04	アモルフアスシリコン太陽電池
JP3178248B2 (ja)	2001-06-18	半導体薄膜の製造方法
JPH0456475B2 (de)	1992-09-08
JPH1126790A (ja)	1999-01-29	半導体薄膜及びその製造方法並びに薄膜太陽電池
KR820002283B1 (ko)	1982-12-13	대표면적광전지(大表面積光電地)의 제조방법
JPH0888379A (ja)	1996-04-02	カルコパイライト型化合物薄膜太陽電池
JP3002162B2 (ja)	2000-01-24	太陽電池