JPH0473305B2 - - Google Patents
Info
- Publication number
- JPH0473305B2 JPH0473305B2 JP57096908A JP9690882A JPH0473305B2 JP H0473305 B2 JPH0473305 B2 JP H0473305B2 JP 57096908 A JP57096908 A JP 57096908A JP 9690882 A JP9690882 A JP 9690882A JP H0473305 B2 JPH0473305 B2 JP H0473305B2
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- electrode
- spacer
- hollow body
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 23
- 239000007789 gas Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 16
- 125000006850 spacer group Chemical group 0.000 claims description 15
- 239000011261 inert gas Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 17
- 239000000853 adhesive Substances 0.000 description 13
- 230000001070 adhesive effect Effects 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 150000003377 silicon compounds Chemical class 0.000 description 5
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000005979 thermal decomposition reaction Methods 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- -1 SiH 4 Chemical class 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical class [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229920006127 amorphous resin Polymers 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000113 methacrylic resin Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57096908A JPS58215081A (ja) | 1982-06-08 | 1982-06-08 | アモルフアスシリコン太陽電池 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57096908A JPS58215081A (ja) | 1982-06-08 | 1982-06-08 | アモルフアスシリコン太陽電池 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58215081A JPS58215081A (ja) | 1983-12-14 |
| JPH0473305B2 true JPH0473305B2 (de) | 1992-11-20 |
Family
ID=14177455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57096908A Granted JPS58215081A (ja) | 1982-06-08 | 1982-06-08 | アモルフアスシリコン太陽電池 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58215081A (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6030163A (ja) * | 1983-07-28 | 1985-02-15 | Fuji Electric Corp Res & Dev Ltd | 薄膜太陽電池モジユ−ル |
| US4638111A (en) * | 1985-06-04 | 1987-01-20 | Atlantic Richfield Company | Thin film solar cell module |
| JPS62132371A (ja) * | 1985-12-05 | 1987-06-15 | Matsushita Electric Ind Co Ltd | 太陽電池モジュール |
| SG175565A1 (en) | 2006-09-29 | 2011-11-28 | Univ Florida | Method and apparatus for infrared detection and display |
| FR2947955B1 (fr) * | 2009-07-08 | 2014-07-04 | Total Sa | Procede de fabrication de cellules photovoltaiques multi-jonctions et multi-electrodes |
| US8490343B2 (en) * | 2009-09-09 | 2013-07-23 | Saint-Gobain Performance Plastics Corporation | Attachment system of photovoltaic cells to fluoropolymer structural membrane |
| EP2695205A4 (de) * | 2011-04-05 | 2014-10-08 | Univ Florida | Verfahren und vorrichtung zur integration einer infrarot (ir)-photovoltaikzelle auf einer dünnfilm-photovoltaikzelle |
| RU2014102650A (ru) | 2011-06-30 | 2015-08-10 | Юниверсити Оф Флорида Рисеч Фаундэйшн, Инк. | Усиливающий инфракрасный фотодетектор и его применение для обнаружения ик-излучения |
| KR20180018660A (ko) | 2015-06-11 | 2018-02-21 | 유니버시티 오브 플로리다 리서치 파운데이션, 인코포레이티드 | 단분산, ir-흡수 나노입자, 및 관련 방법 및 장치 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55141960U (de) * | 1979-03-29 | 1980-10-11 |
-
1982
- 1982-06-08 JP JP57096908A patent/JPS58215081A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58215081A (ja) | 1983-12-14 |
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