JPS58212125A - Jig for heat treatment - Google Patents

Jig for heat treatment

Info

Publication number
JPS58212125A
JPS58212125A JP9312582A JP9312582A JPS58212125A JP S58212125 A JPS58212125 A JP S58212125A JP 9312582 A JP9312582 A JP 9312582A JP 9312582 A JP9312582 A JP 9312582A JP S58212125 A JPS58212125 A JP S58212125A
Authority
JP
Japan
Prior art keywords
wafer
heat treatment
film
susceptor
circumferential edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9312582A
Other languages
Japanese (ja)
Inventor
Toshiaki Kitahara
北原　敏昭
Ichiro Takei
武居　一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9312582A priority Critical patent/JPS58212125A/en
Publication of JPS58212125A publication Critical patent/JPS58212125A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To obtain the heat treatment jig enabled to unify on the whole rgion of a wafer film thickness and quality of a film to be generated by a method wherein thermal capacity of a susceptor consisting of a quartz plate larger than the wafer is utilized. CONSTITUTION:Thickness of the susceptor 10 is made to from several times to ten several times of thickness of the wafer 1 to enlarge thermal capacity, and is used as a buffer to make temperature variation received by the wafer 1 as to become gently at heating time when the heat treatment jig 8 is inserted in a core tube, and at cooling time when the jig is taken out from the core tube. Moreover, to make the buffer effect to the maximum, gaps 13 between nails 12 and a holding face 11 are made small, and the wafer 1 is made as to adhere closely to the holding face 11. Moreover, the circumferential edge part of the susceptor 10 is protruded further than the circumferential edge part of the wafer 1 so as to make the circumferential edge part of the wafer 1 to generate temperature variation the same with the central part, and when the wafer comes in contact with the temperature at the inside and the outside of the core tube, the structure is designed such that the circumferential edge of the wafer 1 only is inhibited to follow sensitively the temperature thereof. A poly-silicon film is formed on the surface of the wafer 1 according to the low pressure CVD method using the heat treatment jig 8 like this, and the respective wafers are porduced with unified film thickness, film quality at the respective parts of the wafer.

Description

【発明の詳細な説明】 本発明はウェハ等に熱処理を施す除用いる熱処理用治具
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a heat treatment jig used for heat treating wafers and the like.

半導体装置の製造工程において、半導体薄板（ウェハ）
の表面に各種の被膜を形成する作業があるが、この被膜
形成方法の一つとして、気相状態で処理ガスを反応させ
、順次ウェハの表面に反応物を沈着させるＣＶＤ（気相
化学成長）方法が広く用いられている。そして、高周波
トランジスタ、バイポーラＩＣ，シリコンゲート−パワ
ートランジスタ等の素子の形成においてポリシリコンを
形成する場合圧も、このＣＶＤ方法が採用されている。In the manufacturing process of semiconductor devices, semiconductor thin plates (wafers)
There is work to form various films on the surface of the wafer, and one of the methods for forming this film is CVD (vapor phase chemical growth), in which a processing gas is reacted in the vapor phase and reactants are sequentially deposited on the surface of the wafer. The method is widely used. This CVD method is also used to form polysilicon in the formation of elements such as high frequency transistors, bipolar ICs, and silicon gate power transistors.

この場合には、低圧ＣＶＤ法が採用され、第１図で示す
ように、ウェハｌを石英治Ａ２に林立状態で載置した後
、この石英治具２を炉心管（石英管）３内に入れ、供給
管４を有するキャップ５で炉心管３の開口端を塞ぐとと
もに、炉心管３０尾管６から真空排気を行なって炉心管
内の圧力ヲ０．５〜１．２　Ｔｈｒｒと低圧にし、かつ
供給管４からモノシラン（５ＩＨ４）ガスを供給して所
定時間処理を行なう。炉心管３はヒータ７によって５５
０〜６４０Ｃに加熱されていることから、炉心管３内で
は反応が進み、各ウェハｌの表面にポリシリコンが沈着
する。ポリシリコン膜の膜厚は、たとえば高周波トラン
ジスタの場合は１００ＯＡ、シリコンゲート・パワート
ランジスタの場合は４５００成される。In this case, a low-pressure CVD method is adopted, and as shown in FIG. The open end of the furnace core tube 3 is closed with a cap 5 having a supply pipe 4, and the furnace core tube 30 is evacuated from the tail tube 6 to reduce the pressure inside the furnace core tube to a low pressure of 0.5 to 1.2 Thrr. Monosilane (5IH4) gas is supplied from the supply pipe 4 and the treatment is carried out for a predetermined period of time. The furnace core tube 3 is heated to 55 by the heater 7.
Since it is heated to 0 to 640C, the reaction progresses within the furnace tube 3, and polysilicon is deposited on the surface of each wafer 1. The thickness of the polysilicon film is, for example, 100 OA for a high frequency transistor, and 4,500 OA for a silicon gate power transistor.

ところで、このような低圧ＣＶＤ法でポリシリコン膜を
形成した場合、ａｓｏｏＸ、４５００Ａと膜ノＩが厚い
場合は、ウェハ内各部の膜厚および膜質は均一であるが
、１０（ＩＯＡと膜厚が薄い場合にはウェハの周縁部の
膜厚は中央部分に比較して厚くかつ膜質も悪いことが判
明した。　　　　゛この膜のバラツキについて検討した
ところ、第２図で示すように、１枚のウェハにおいて、
ウェハの中央部分の温度に対して周辺部分の温度は数Ｃ
と高くなり、この結果、膜の均一性が失われることが判
明した。また、膜厚を厚くする場合には、ウェハは長時
間熱処理されることから、ウェハ各部の温度は均一にな
り、膜は均一となることもわかった。By the way, when a polysilicon film is formed by such a low-pressure CVD method, if the film thickness is asoo It was found that when the film was thin, the film thickness at the periphery of the wafer was thicker and the film quality was poorer than that at the center. ゛When we investigated the variation in this film, we found that the In,
The temperature of the peripheral part of the wafer is several degrees Celsius compared to the temperature of the central part of the wafer.
It was found that as a result, the uniformity of the film was lost. It was also found that when increasing the film thickness, the wafer is heat-treated for a long time, so the temperature of each part of the wafer becomes uniform and the film becomes uniform.

したがって、本発明の目的は生成する膜の膜厚および膜
質がウェハ全域で均一となる熱処理用治具を提供するこ
とにある。Therefore, an object of the present invention is to provide a heat treatment jig in which the thickness and quality of the produced film are uniform over the entire wafer.

このような目的を達成するために本発明は、ウェハを垂
直面に接触状態で着脱自在に保持する石び： 英板かうなるサセプターを一定間隔に石英の台座に植設
した構造の熱処理用治具であって、サセプターのウェハ
よりも大きい熱容量を利用するものである。In order to achieve such an object, the present invention provides a heat treatment cure having a structure in which susceptors, which are made of quartz plates, are mounted at regular intervals on a quartz pedestal, and susceptors that removably hold the wafer in contact with a vertical surface. The heat capacity of the susceptor is larger than that of the wafer.

以下、実施例により本発明を説明する。The present invention will be explained below with reference to Examples.

第３図は本発明の一実施例による熱処理用治具を示す正
面図、第４図は同じく一部を示す斜視図、第５図は実施
例の熱処理用治具を用いた際の熱処理時のウェハ各部の
温度分布を示すグラフである。FIG. 3 is a front view showing a heat treatment jig according to an embodiment of the present invention, FIG. 4 is a perspective view showing a part of the same, and FIG. 5 is a heat treatment when using the heat treatment jig of the embodiment. 3 is a graph showing the temperature distribution of various parts of the wafer.

実施例の熱処理用治具８は第３図および第４図で示すよ
う圧、長い板状の台座９と、この台座９の上面に定間隔
に平行に設けた取付溝に下端を挿嵌して固定してなる略
正方形板からなるサセプター１０と、からなっている。As shown in FIGS. 3 and 4, the heat treatment jig 8 of this embodiment has a long plate-shaped pedestal 9, and its lower end is inserted into mounting grooves provided in parallel at regular intervals on the upper surface of the pedestal 9. and a susceptor 10 made of a substantially square plate fixed to the susceptor 10.

また、サセプター１０の垂直面である保持面１１にはＬ
字状の３個の爪１２が取り付けられている。そして、爪
１２と保持面１１との隙間１３にウェハｌを挾み込むよ
うになっている。爪１２は上方に並んで２個、下方に１
　ｉ＠配設され、下方の爪１２でウェハ１の重量を支え
るようになって（：：トる。また、ウェハ１の着１：１
１ 脱は側方から矢印のように行なう。この際、ウェハ１の
方向識別縁である直線状に延在するオリエンテーション
・フラット１４を上方にして脱着を行なう。Further, on the holding surface 11 which is the vertical surface of the susceptor 10, L
Three letter-shaped claws 12 are attached. Then, the wafer l is inserted into the gap 13 between the claw 12 and the holding surface 11. There are two claws 12 arranged above and one below.
i@ is arranged so that the weight of the wafer 1 is supported by the lower claw 12.
1. Remove from the side as shown by the arrow. At this time, the wafer 1 is attached and detached with the linearly extending orientation flat 14, which is the orientation edge of the wafer 1, facing upward.

一方、前記台座９．サセプター１０．爪１２は石英で形
成してお（。この結果、ポリシリコンの堆積が生じた場
合、熱処理用治具８をぶつ酸に所定時間浸漬させること
によって、石英に比較して遥かに溶解し易いポリシリコ
ンを簡単に除去できる。On the other hand, the pedestal 9. Susceptor 10. The claws 12 are made of quartz (as a result, if polysilicon is deposited, the heat treatment jig 8 can be immersed in butic acid for a predetermined period of time to remove polysilicon, which is much more soluble than quartz). Silicone can be easily removed.

他方、サセプター１０の厚さはウェハ１の厚さの数倍か
ら士数倍にしてウェハ１に比較して熱容量を大きくしで
ある。これは、熱処理用治具８を炉心管内に挿入した際
の加熱時および炉心管から出した際の冷却時のウェハ１
が受ける温度変化が緩かになるようにするためのバッフ
ァとして用いるためである。また、バッファ効果を最大
にするために、爪１２と保持面１１との隙間１３を小さ
くし、ウェハ１が保持面１１に密着させるようにする。On the other hand, the thickness of the susceptor 10 is made to be several times to several times as large as the thickness of the wafer 1 to increase the heat capacity compared to the wafer 1. This is the case when the wafer 1 is heated when the heat treatment jig 8 is inserted into the furnace tube and when it is cooled when taken out from the furnace tube.
This is because it is used as a buffer to slow down the temperature changes that it undergoes. Further, in order to maximize the buffer effect, the gap 13 between the claw 12 and the holding surface 11 is made small so that the wafer 1 is brought into close contact with the holding surface 11.

まｔこ、ウェハ１の周縁部が中央部と同様な温度変化を
起すように、サセプター１０の周縁部は第４図で示すよ
うに、ウェハ１の周縁よりも突出させ、炉心管内外の温
度に接した際、ウェハの周縁のみが敏感にその温度に追
従しないようになっている。As shown in FIG. 4, the periphery of the susceptor 10 is made to protrude beyond the periphery of the wafer 1 so that the temperature change at the periphery of the wafer 1 is similar to that at the center, and the temperature inside and outside the reactor tube is controlled. When in contact with the wafer, only the periphery of the wafer is sensitive and does not follow the temperature.

このような熱処理用治具８を用いて低圧ＣＶＤ法によっ
てウェハ１の表面に１００ＯＡの厚さのポリシリコン膜
を形成したところ、各ウニノーはウェハ各部で膜厚、膜
質が均一となった。これは、熱容量の大きいサセプター
１０にウニノ・１を密着保持させることによって、ウェ
ハｌの温度は、第５図のグラフで示すように、ウェハｌ
の中心とその周縁部では略均−となることによって、安
定した膜の成長が図れる結果である。したがって、特性
および歩留の向上を図ることができる。When a polysilicon film with a thickness of 100 OA was formed on the surface of the wafer 1 by the low-pressure CVD method using such a heat treatment jig 8, the film thickness and film quality of each Uni-No were uniform at each part of the wafer. By holding the UNINO-1 in close contact with the susceptor 10, which has a large heat capacity, the temperature of the wafer l can be reduced as shown in the graph of FIG.
The result is that stable film growth can be achieved by achieving approximately uniformity at the center and the periphery. Therefore, characteristics and yield can be improved.

なお、本発明は前記実施例に限定されない。す　　、な
わち、爪等の材質はシリコンたバイ）（Ｓｉｃ）等でも
よい。Note that the present invention is not limited to the above embodiments. In other words, the material of the claws etc. may be silicone (Sic) or the like.

また、本発明の熱処理用治具は低圧ＣＶＤ以外のＣＶＤ
、エピタキシャル形成等の熱処理にも使用できる。特に
高温処理の場合には、サセプターがウェハの温度変化の
バッファとして働くことから、熱処理炉出入時の温度差
による転移の発生を低減できる特長もある。Further, the heat treatment jig of the present invention can be used for CVD other than low pressure CVD.
It can also be used for heat treatment such as epitaxial formation. Particularly in the case of high-temperature processing, the susceptor acts as a buffer for temperature changes in the wafer, which has the advantage of reducing the occurrence of transitions due to temperature differences between entering and exiting the heat processing furnace.

さらにサセプターにおけるウニへの保持構造も他の構造
でもよい。Furthermore, the structure for holding the sea urchin in the susceptor may also be other structure.

以上のように、本発明の熱処理用治具によれば、被処理
物であるウェハ各部は均一な熱処理が施される。この結
果、ポリシリコン膜の形成においてウェハの中心部およ
び周縁部各部は均一な膜厚。As described above, according to the heat treatment jig of the present invention, each part of the wafer, which is the object to be processed, is uniformly heat treated. As a result, when forming a polysilicon film, the thickness of the polysilicon film is uniform throughout the center and peripheral parts of the wafer.

膜質となり、特性の向上および歩留の向上を図ることが
できる。The film quality can be improved, and the characteristics and yield can be improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の石英治具を用いてウェハ面にポリシリコ
ン膜を生成する状態を示す説明図、第２図は同じくウェ
ハ各部の温度分布を示すグラフ、 第３図は本発明の一実施例による熱処理用治具を示す正
面図、 第４図は同じく一部を示す斜視１１１図、第５図は実施
例の熱処理治具を用いた際のウェハ各部の温度分布を示
すグラフである。 １・・・ウェハ、２・・・石英治具、３・・・炉心管、
８・・・熱処理用治具、９・・・台座、ｌＯ・・・サセ
プター、１１・・・保持面、１２・・・爪、１３・・・
隙間。、代理人　弁理士　　薄　１）利　幸 （゛：ｊFig. 1 is an explanatory diagram showing the state in which a polysilicon film is generated on a wafer surface using a conventional quartz jig, Fig. 2 is a graph showing the temperature distribution of each part of the wafer, and Fig. 3 is an embodiment of the present invention. FIG. 4 is a front view showing the heat treatment jig according to the example, FIG. 4 is a perspective view showing a part of the same, and FIG. 5 is a graph showing the temperature distribution of each part of the wafer when the heat treatment jig according to the example is used. 1... Wafer, 2... Quartz jig, 3... Furnace tube,
8... Heat treatment jig, 9... Pedestal, lO... Susceptor, 11... Holding surface, 12... Claw, 13...
gap. , Agent Patent Attorney Susuki 1) Toshiyuki (゛:j

Claims (1)

【特許請求の範囲】 １、　ウェハな垂直面に接触状態で着脱自在に保持する
板状のサセプターを一定間隔に台座に植設してなる熱処
理用治具。 ２、前記サセプターおよび台座は石英からなるとともに
、サセプターの周縁はウェハの周縁よりも実計している
ことを特徴とする特許請求の範囲第１項記載の熱処理用
治具。[Claims] 1. A heat treatment jig comprising plate-shaped susceptors that are removably held in contact with the vertical surface of a wafer and are planted on a pedestal at regular intervals. 2. The heat treatment jig according to claim 1, wherein the susceptor and the pedestal are made of quartz, and the periphery of the susceptor is larger than the periphery of the wafer.
JP9312582A 1982-06-02 1982-06-02 Jig for heat treatment Pending JPS58212125A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9312582A JPS58212125A (en) 1982-06-02 1982-06-02 Jig for heat treatment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9312582A JPS58212125A (en) 1982-06-02 1982-06-02 Jig for heat treatment

Publications (1)

Publication Number Publication Date
JPS58212125A true JPS58212125A (en) 1983-12-09

Family

ID=14073795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9312582A Pending JPS58212125A (en) 1982-06-02 1982-06-02 Jig for heat treatment

Country Status (1)

Country Link
JP (1) JPS58212125A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164335A (en) * 1990-06-14 1992-11-17 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus and method of manufacturing semiconductor device
CN106222629A (en) * 2016-08-26 2016-12-14 奥特斯维能源（太仓）有限公司 A kind of plated film graphite boat

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164335A (en) * 1990-06-14 1992-11-17 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus and method of manufacturing semiconductor device
CN106222629A (en) * 2016-08-26 2016-12-14 奥特斯维能源（太仓）有限公司 A kind of plated film graphite boat

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