JPS58207369A - Vacuum deposition device - Google Patents
Vacuum deposition deviceInfo
- Publication number
- JPS58207369A JPS58207369A JP8946782A JP8946782A JPS58207369A JP S58207369 A JPS58207369 A JP S58207369A JP 8946782 A JP8946782 A JP 8946782A JP 8946782 A JP8946782 A JP 8946782A JP S58207369 A JPS58207369 A JP S58207369A
- Authority
- JP
- Japan
- Prior art keywords
- film thickness
- crucibles
- turntable
- vapor
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/548—Controlling the composition
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photoreceptors In Electrophotography (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、とくに膜厚方向の成分比勾配が問題となる光
導電膜まだはその他の真空蒸着膜の製造に適した真空蒸
着装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a vacuum evaporation apparatus suitable for producing photoconductive films and other vacuum-deposited films in which the component ratio gradient in the film thickness direction is particularly problematic.
従来、複数種の元素からなる光導電膜を真空蒸着により
形成する場合、この膜を成分比の異なる多数の層でもっ
て多層構造に形成することが行なわれている。しかし、
このような積層法では、各層の厚みを十分に小さくしな
い限り、各層間で光のモ渉を生じる惧れがある。また、
膜厚方向における成分比勾配の規正が容易でなく、荷電
キャリアの移動にばらつきを生じるなど、良好な光導電
膜を得難い欠点がある。Conventionally, when a photoconductive film made of a plurality of types of elements is formed by vacuum evaporation, the film is formed into a multilayer structure with a large number of layers having different component ratios. but,
In such a lamination method, unless the thickness of each layer is made sufficiently small, there is a risk of light interference between the layers. Also,
It is difficult to regulate the component ratio gradient in the film thickness direction, which causes variations in the movement of charge carriers, making it difficult to obtain a good photoconductive film.
本発明の真空蒸着装置によると、第１の元素の蒸発源と
蒸着処理位置との間に第１のアイレスを、そして、前記
元素とは異なる第２の元素の蒸発源と前記蒸着処理位置
との間に第２のアイレスをそれぞれ挿入自在に設け、前
記第１および第２のアイレスの各開口度を膜厚モニタか
らの信号にもとづき選択的に制御することにより、両蒸
発源から前記蒸着処理位置へ向う蒸気流の量を制御する
のであって、これを以下図面に示しだ実施例とともに詳
しく説明する。According to the vacuum evaporation apparatus of the present invention, the first airless is provided between the evaporation source of the first element and the evaporation processing position, and the evaporation source of the second element different from the above element is connected to the evaporation processing position. The vapor deposition process is performed from both evaporation sources by selectively controlling the opening degree of each of the first and second eyeres based on the signal from the film thickness monitor. The control of the amount of steam flow to a location will be described in more detail below with reference to the embodiments shown in the drawings.
第１図において、回転シャフト１とともに一定速度の回
転をなすターンテーブル２ｆｄ、その円周に沿う板面領
域に１６個の円形の透孔３ａ、’３ｂ。In FIG. 1, a turntable 2fd rotates at a constant speed together with the rotary shaft 1, and 16 circular through holes 3a, '3b are formed in the plate surface area along the circumference of the turntable 2fd.
３Ｃ３ｐを有し、蒸着膜厚検出用の透孔３ａを除く１５
個の透孔３ ｂ 、 ３ ｃ −３ｐ内には、１５個の
被蒸着基板としてのガラス円板４ｂ、４ｃ４ｐがそれぞ
れ嵌め込みにより装着されている。ガラス円板４ｂ、４
ｃｍ ・４ｐは、撮像管のフェースプレートとなるもの
で、その下面には透明導電膜がすでに付設されており、
この透明４ ′ｔｙ膜の膜面上に光導電膜が真空蒸着さ
れる。3C3p, excluding the through hole 3a for detecting the thickness of the deposited film 15
Fifteen glass disks 4b, 4c4p serving as substrates to be deposited are fitted into the through holes 3b, 3c-3p, respectively. Glass discs 4b, 4
cm ・4p is the face plate of the image pickup tube, and a transparent conductive film is already attached to the bottom surface of the face plate.
A photoconductive film is vacuum deposited on the surface of this transparent 4'ty film.
前記光導電膜がセレン（Ｓｅ）とひ素（Ａｓ）とからな
る場合、第１の元素たるＳｅが第１のルツボ６内に納め
られ、第２の元素たるＡｓが第２のルツボ６内に納めら
れる。第１および第２のルツボ５．６は、それぞれの中
心軸５ａ、６ａが透孔３ｄの中心部で交差するように傾
斜配置されており、中心軸５ａの延長線上に第１の膜厚
モニタ７が設けられ、中心軸６ａの延長線−Ｌに第２の
膜厚モニタ８が設けられている。すなわち、第１のルツ
ボ５は透孔３ａを通じて第１の膜厚モニタ７と向き合い
、第２のルツボ６は透孔３ａを１・ｂじて第２の膜厚モ
ニタ８と向き合う。When the photoconductive film is made of selenium (Se) and arsenic (As), the first element, Se, is contained in the first crucible 6, and the second element, As, is contained in the second crucible 6. It can be paid. The first and second crucibles 5.6 are arranged at an angle so that their central axes 5a and 6a intersect at the center of the through hole 3d, and the first film thickness monitor is located on an extension of the central axis 5a. 7 is provided, and a second film thickness monitor 8 is provided on an extension line -L of the central axis 6a. That is, the first crucible 5 faces the first film thickness monitor 7 through the through hole 3a, and the second crucible 6 faces the second film thickness monitor 8 through the through hole 3a.
ターンテーブル２は蒸着処理期間中、図示矢印の方向へ
回転するから、図示した透孔３ｄの位置、つまり単一の
蒸着処理゛位置Ａに、その他の透孔３ｂ、３Ｃ・ ３ｐ
およびガラス円板４ｂ、４ｃｍ４ｐが順次に送り込まれ
ることになり、この巡回動作が繰り返えされる。Since the turntable 2 rotates in the direction of the arrow shown in the figure during the vapor deposition process, the other through holes 3b, 3C, and 3p are placed at the position of the illustrated through hole 3d, that is, the single vapor deposition process position A.
Then, the glass disks 4b and 4cm 4p are sequentially fed in, and this circular operation is repeated.
第１および第２のルツボ５，６は加熱用ヒータ９．１０
によって加熱され、加熱温度は各ルツボ５．６の底部に
設けられだ熱電対１１．１２によって検出される。捷た
、両ルツボ５，６の周囲には円筒状のカバー１３．１４
が設けられており、カバー１３．１４および仕切り板１
６は、輻射熱を遮断するとともに蒸気流の好ましくない
方向への発散を防止する。なお、カバー１３．１４およ
び仕切り板１５は、必要により水や液体窒素等の寒剤に
より冷却される。The first and second crucibles 5 and 6 are heated by heating heaters 9.10
The heating temperature is detected by a thermocouple 11.12 provided at the bottom of each crucible 5.6. A cylindrical cover 13, 14 is placed around both the broken crucibles 5 and 6.
are provided, a cover 13.14 and a partition plate 1
6 blocks radiant heat and prevents vapor flow from dispersing in undesirable directions. Note that the covers 13, 14 and the partition plate 15 are cooled with water or a cryogen such as liquid nitrogen, if necessary.
膜厚モニタ７．８は水晶振動子形の膜厚計からなり、こ
、＃１を囲繞する第１および第２の筒状カバー１６ 、
１７は、それぞれに対応するルツボ５゜６からの蒸気の
みを当該膜厚モニタ７．８に導くだめのものであり、そ
の内径を小さくして筒長を大きくすればするほど他の蒸
発源からの蒸気混入を少なくすることができる。しかし
その反面、膜厚モニタの感度に低下をきたすので、蒸発
材料に応じて適当な内径および筒長に選ぶ必要がある、
１第１のルツボ５と蒸着処理位置Ａとの間に挿入自在に
設けられた箱形の第１のアイレス１８はその天板部１８
ａに、ルツボ中心軸５ｄの延長線を深く入り込ませるこ
とのできるくさび状の開［１１９を有している。また、
第２のルツボ６と蒸着処理位置Ａとの間に挿入自在に設
けられた箱形の第２のアイレス２ｏはその天板部２０
ａに、ルツボ中心軸６ａの延長線を深く入り込ませるこ
とのできるくさび状の開口２１を有している。したがっ
て、第１および第２のアイレス１８．２０を図示矢印の
方向へ移動させると、その移動（五に応じて両蒸発源か
ら蒸着処理位置Ａへ向う蒸気流の量を制御することがで
きる。なお、両アイレス１８．２０の回転中ＩＬ・は、
ターンテーブル２の回転中心と同軸である３゜
第１図に示す構体は、第２図にｚｌ：すようにベルジャ
２２内に納められ、ベルジャ２２外から駆動制御を受け
る３、ギヤー機構２３は、第１および第２のアイレス１
８ 、２０を駆動させるだめのもので、真空ポンプ２４
および真空弁２５は、ベルジャ２２内を真空に保つため
のものである。また、筒状カバー１６．１７は仕切り板
２６にとりつけられており、第１．第２のルツボ６．６
およびカバー１３．１４は台座２７にとりつけられてお
り、仕切り仮２８には蒸気導入筒２９がとりつけられて
いる。The film thickness monitor 7.8 consists of a crystal oscillator type film thickness meter, and includes first and second cylindrical covers 16 surrounding #1;
17 is for guiding only the vapor from the corresponding crucible 5.6 to the film thickness monitor 7.8, and the smaller the inner diameter and the longer the cylinder length, the more the vapor from other evaporation sources is removed. can reduce steam contamination. However, on the other hand, the sensitivity of the film thickness monitor decreases, so it is necessary to select an appropriate inner diameter and tube length depending on the evaporation material.
1. The box-shaped first eyeless 18, which is freely inserted between the first crucible 5 and the vapor deposition processing position A, has a top plate portion 18.
a has a wedge-shaped opening [119] into which an extension of the crucible central axis 5d can be deeply inserted. Also,
A box-shaped second eyeless 2o, which is freely inserted between the second crucible 6 and the vapor deposition processing position A, has a top plate portion 20.
A has a wedge-shaped opening 21 into which an extension of the crucible center axis 6a can be deeply inserted. Therefore, by moving the first and second eyeres 18, 20 in the direction of the arrow shown in the figure, the amount of vapor flow from both evaporation sources toward the vapor deposition processing position A can be controlled depending on the movement. In addition, during rotation of both eyelets 18.20, IL.
The structure shown in FIG. 1 is housed in the bell jar 22 as shown in FIG. , first and second eyeless 1
8, 20, and the vacuum pump 24
And the vacuum valve 25 is for keeping the inside of the bell jar 22 in a vacuum. Further, the cylindrical covers 16 and 17 are attached to the partition plate 26, and the first cylindrical cover 16.17 is attached to the partition plate 26. Second crucible 6.6
The covers 13 and 14 are attached to a pedestal 27, and a steam introduction tube 29 is attached to the temporary partition 28.
前述のように構成されたＡ空蒸着装置によって、たとえ
ば９０原子％Ｓｅ、１０原子％Ａｓ組成の薄膜を形成す
るには、ベルジャ２２内を１Ｘ １０−６Ｔｏ ｒｒ以
下の真空度に保ち、ターンテーブル２を３０ｒｐ、ｍ
の速度で回転させ、ヒータ９，１０に加熱電流を通じ
る。このとき、第１および第２のアイレス１８ 、２０
はともに相互接近しており、開１１度は零であるが、両
ルツボ５，６からの蒸発か略一定の速度となった時点で
相反方向へ移動させる第１および第２のアイレス１８
、２０の開ＩＩ Ｉ＆か徐々に大きくなる。In order to form a thin film having a composition of, for example, 90 atomic % Se and 10 atomic % As using the A empty evaporation apparatus configured as described above, the inside of the bell jar 22 is kept at a vacuum level of 1X 10-6 Torr or less, and the turntable is 2 at 30rp, m
The heating current is passed through the heaters 9 and 10. At this time, the first and second eyelets 18, 20
are both close to each other, and the opening 11 degrees is zero, but when the evaporation from both crucibles 5 and 6 reaches a substantially constant rate, the first and second eyelets 18 are moved in opposite directions.
, 20's opening II I& or gradually becomes larger.
これによって、ターンテーブル２に嵌め込１れている１
５個のガラス円板のそれぞれに、５ｅｌ−１・よびＡｓ
が同時に真空蒸着されていくことになる、１そして、タ
ーンテーブル２が一回転する都度、第１および第２の膜
厚モニタ７．８から、ＳｓおよびＡｓの実質的蒸着量に
比例した大きさのデータ信号が送り出されるから、この
２種のデータＧｌ弓によるＳｅ対Ａｓが原子比換算で９
対１になるように両アイレノ） １８ 、２０を移動さ
せてその開［’１度を調整すればよい。ただし、両アイ
レット１８ 、２０の開口度制御だけでは十分に調整し
きれないときは、併用手段として、ヒータ９，１゜に流
れる電流の大きさを制御してもよい。This allows the 1 that is fitted into the turntable 2 to
5el-1 and As on each of the five glass disks.
will be vacuum-deposited at the same time, 1. Then, each time the turntable 2 makes one rotation, the first and second film thickness monitors 7.8 show that the thickness is proportional to the actual amount of Ss and As deposited. Since data signals of
All you have to do is move both Airenos) 18 and 20 so that they are one pair and adjust their opening ['1 degree. However, if the degree of opening of both eyelets 18 and 20 cannot be adjusted sufficiently by controlling the opening degree alone, the magnitude of the current flowing through the heaters 9 and 1° may be controlled as a combined means.
膜厚モニタ７．８からのデータ（ｍ号を演算し、この演
舞結果にもとづぐ信号をアイレス駆動部またはヒータ電
流制御部に短時間でフィードバックさせるのに、コンビ
ーータを利用するのが好ましい。ただし、所定成分比の
演算値を前もって計算ｊ〜でおき、この演算値となるよ
うに前記アイレス駆動部壕だはヒータ電流制御部を手動
操作してもよく、この場合はコ／ピ＝−夕を要しない。It is preferable to use a conbeater to calculate the data (m) from the film thickness monitor 7.8 and feed back a signal based on the performance result to the airless drive unit or heater current control unit in a short time. However, it is also possible to calculate the calculated value of the predetermined component ratio in advance and manually operate the airless drive section or heater current control section so as to obtain this calculated value.In this case, the copy/pi = -Doesn't require evening.
手動操作では、たとえば、ペンレコーダを用い、その記
録紙に蒸着予定社を示す制御曲線をｆめ描いておく。そ
して、膜厚セ／ザの出力信号を前記ペンレコーダに４え
、ペンレコーダの出力ペン指示が前記制御曲線と一致す
るようにアイレス駆動部まだはヒータ電流制御部を操作
すればよい。In the manual operation, for example, a pen recorder is used and a control curve indicating the company to be deposited is drawn on the recording paper. Then, the output signal of the film thickness sensor is input to the pen recorder, and the eyeless drive unit and heater current control unit are operated so that the output pen instruction of the pen recorder matches the control curve.
Ｓｓを主成分とし、テルル（Ｔｅ）が膜厚方向に特定の
分布で添加きれている厚さ４μｍの薄膜を形成する場合
には、第１および第２のルツボ５゜６にＳｅおよびＴｅ
をそれぞれ充填しておき、ベルジャ２２内を１ｘ１ｏ
Ｔｏｒｒ以下の真空度に保つ。ター／テーブル２を３
Ｏｒ、 ｐ、 ｍ、の速度で回転させつつ、前述と同
様に第１および第２のアイレス１８．２０の各開口度お
よび要すればヒータ９，１ｏに流れる電流を膜厚モニタ
７．８からの信号にもとづき制御し、ＳｅおよびＴｅの
蒸着膜を調整する。そして、蒸着膜厚の総計が４μｍに
達した時点で両アイレス１８．２０の開口度を零にする
。When forming a thin film with a thickness of 4 μm containing Ss as the main component and tellurium (Te) added in a specific distribution in the film thickness direction, Se and Te are placed in the first and second crucibles at 5°6.
Fill each bell jar 22 with 1x1o
Maintain the degree of vacuum below Torr. tar/table 2 to 3
While rotating at speeds of Or, p, m, the opening degrees of the first and second eyelets 18.20 and, if necessary, the current flowing through the heaters 9 and 1o are measured from the film thickness monitor 7.8 in the same manner as described above. control based on the signal of , and adjust the deposited films of Se and Te. Then, when the total thickness of the deposited film reaches 4 μm, the opening degree of both eyelets 18 and 20 is made zero.
以上のように、本発明の真空蒸着装置は、蒸気圧の異な
る多元素系薄膜を多源回転蒸着法に１こり形成するもの
であるが、複数種の元素蒸気を膜Ｊ！、３モニタからの
信号にもとづき量制御して被蒸着面一ヒで混合させるだ
め、膜厚方向の成分比勾配を任意に制御でき、しかも、
完全に連続した勾配となすことができる。−１だ、多数
の膜を同一条件Ｆで精度よく高能率で形成することがで
き、従来のノラノシング蒸着法に比べて欠陥の少ない蒸
着膜を・得ることができる。その上、蒸着速度が安定化
するため、膜の電気的欠陥がほとんどみられず、尤の干
渉の問題もないので、とくに撮像管もしくは撮像素子の
光導電膜、受光素子−または干渉フィルタ等の製造に適
用し７て頗るすぐれた効果を得ることができる。As described above, the vacuum evaporation apparatus of the present invention forms multi-element thin films with different vapor pressures in one step using the multi-source rotary evaporation method. By controlling the amount based on the signals from the three monitors and mixing on the deposition surface, the component ratio gradient in the film thickness direction can be controlled arbitrarily.
It can be made into a completely continuous slope. -1, a large number of films can be formed with high precision and high efficiency under the same conditions F, and a deposited film with fewer defects can be obtained compared to the conventional nolanosing vapor deposition method. Furthermore, since the deposition rate is stabilized, there are almost no electrical defects in the film and there is no problem with interference, so it is especially useful for photoconductive films of image pickup tubes or image sensors, light receiving elements, or interference filters. It can be applied to manufacturing to obtain excellent effects.
第１図は本発明を実施した真空蒸着装置の装部の斜視図
、第２図は同装置の側断面図である。
２ ターンテーブル、３ａ−−・蒸着膜厚検出用透孔
、３ｂ〜３ｐ・ 被蒸着基板装着用透孔、５．６ ル
ツボ、７，８・・・膜厚モニタ、１８゜２ｏ−−−アイ
レス、Ａ・・−蒸着処理位置。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名＠１
図
第２図FIG. 1 is a perspective view of the mounting section of a vacuum evaporation apparatus embodying the present invention, and FIG. 2 is a side sectional view of the apparatus. 2 Turntable, 3a--Through hole for detecting the thickness of the deposited film, 3b-3p, Through-hole for attaching the substrate to be evaporated, 5.6 Crucible, 7, 8... Film thickness monitor, 18゜2o---Eyeless , A... - Vapor deposition processing position. Name of agent: Patent attorney Toshio Nakao and 1 other person @1
Figure 2
Claims (1)
とを円周に沿う板面領域に有し一定速度で回転するター
ンテーブル、前記透孔の通過位置に設定された単一の蒸
着処理位置に向き合うように前記ターンテーブルの下方
に配置された第１および第２のルツボ、前記第１および
第２のルツボにそれぞれ向き合うように前記ターンテー
ブルの上方に配置された第１および第２の膜厚モニタ、
前記第１のルツボと前記蒸着処理位置との間に挿入自在
に配置されて前記第１の膜厚モニタの出力信号にもとづ
き開口度が制御される第１のアイレスならびに前記第２
のルツボと前記蒸着処理位置との間に挿入自在に配置さ
れて前記第２の膜厚モニタの出力信号にもとづき開口度
が制御される第２のアイレスを備えてなることを特徴と
する真空蒸着装置。A turntable that has a through hole for detecting the thickness of a deposited film and a large number of through holes for attaching a substrate to be deposited in a plate surface area along the circumference and rotates at a constant speed, and a turntable that is set at a position where the through holes pass. first and second crucibles arranged below the turntable so as to face one vapor deposition processing position; and a first crucible arranged above the turntable so as to face the first and second crucibles, respectively. and a second film thickness monitor,
a first eyeless that is freely inserted between the first crucible and the vapor deposition processing position and whose opening degree is controlled based on the output signal of the first film thickness monitor;
Vacuum evaporation characterized by comprising a second eyeless that is freely inserted between the crucible and the evaporation processing position and whose opening degree is controlled based on the output signal of the second film thickness monitor. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8946782A JPS58207369A (en) | 1982-05-26 | 1982-05-26 | Vacuum deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8946782A JPS58207369A (en) | 1982-05-26 | 1982-05-26 | Vacuum deposition device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58207369A true JPS58207369A (en) | 1983-12-02 |
| JPS6130029B2 JPS6130029B2 (en) | 1986-07-10 |
Family
ID=13971509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8946782A Granted JPS58207369A (en) | 1982-05-26 | 1982-05-26 | Vacuum deposition device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58207369A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0152577A2 (en) * | 1984-02-16 | 1985-08-28 | Siemens Aktiengesellschaft | Process for the control and the regulation of the composition of layers of metallic conducting alloys during their production |
| JP2010121215A (en) * | 2010-01-14 | 2010-06-03 | Semiconductor Energy Lab Co Ltd | Deposition apparatus and deposition method |
-
1982
- 1982-05-26 JP JP8946782A patent/JPS58207369A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0152577A2 (en) * | 1984-02-16 | 1985-08-28 | Siemens Aktiengesellschaft | Process for the control and the regulation of the composition of layers of metallic conducting alloys during their production |
| JP2010121215A (en) * | 2010-01-14 | 2010-06-03 | Semiconductor Energy Lab Co Ltd | Deposition apparatus and deposition method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6130029B2 (en) | 1986-07-10 |
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