JPS58202535A - Film forming device - Google Patents
Film forming deviceInfo
- Publication number
- JPS58202535A JPS58202535A JP8488082A JP8488082A JPS58202535A JP S58202535 A JPS58202535 A JP S58202535A JP 8488082 A JP8488082 A JP 8488082A JP 8488082 A JP8488082 A JP 8488082A JP S58202535 A JPS58202535 A JP S58202535A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- deposits
- film forming
- internal structure
- internal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/028—Physical treatment to alter the texture of the substrate surface, e.g. grinding, polishing
Abstract
Description
【発明の詳細な説明】
本発明は真空蒸着、スパッタ、ＣＶＤ（化学気相成長）
等の被膜形成装置、特に被処理物を処理するチャンバ内
における各内部構造物の表面構造に関する。[Detailed description of the invention] The present invention uses vacuum evaporation, sputtering, CVD (chemical vapor deposition)
The present invention relates to a film forming apparatus such as the above, and particularly to the surface structure of each internal structure in a chamber for processing an object to be processed.
従来、真空蒸着装置等の内部構造物の表面はガス吸着防
止のために、第１図のように内部構造物１０表面はパフ
仕上による鏡面処理が施こされていた。しかし、この表
面に堆積する堆積物２がＡ４等の場合は剥離の問題はな
いが、付着強度の低い耐熱金属（Ｗ、 Ｍｏ、 Ｔａ
Ｌ シリサイド（ＭｏＳｉｚ、ＷＳｉｚＬ酸化物（Ｓ
ｉＱ、等）尋の堆積物２からなる薄膜は膜の内部応力が
大きく、ある膜以上堆積すると、内部構造物ｌと堆積物
２の界面から剥離し、異物となって被処理物であるウェ
ハに再付着し断線、ショート不良を発生する欠点があっ
た。Conventionally, in order to prevent gas adsorption on the surface of an internal structure of a vacuum evaporation apparatus or the like, the surface of an internal structure 10 has been subjected to a mirror finish using a puff finish, as shown in FIG. However, if the deposit 2 deposited on this surface is A4 or the like, there is no problem with peeling, but if the deposit 2 is made of heat-resistant metals (W, Mo, Ta, etc.) with low adhesion strength,
L silicide (MoSiz, WSizL oxide (S
iQ, etc.) A thin film made of thick deposits 2 has a large internal stress, and when a certain amount of film is deposited, it peels off from the interface between the internal structure 1 and the deposit 2, and becomes a foreign substance that damages the wafer, which is the object to be processed. There was a drawback that the wires would re-adhere and cause wire breaks and short circuits.
本発明の目的は、上記の欠点を改善し、堆積物の剥離を
防止し、被処理物に再付着する異物を低減することにあ
る。An object of the present invention is to improve the above-mentioned drawbacks, prevent the deposit from peeling off, and reduce foreign matter that re-adheres to the object to be treated.
上記目的を達成するために、本発明では、真空蒸着装置
等の被膜形成装置のチャンバ内の内部構造物表面をホー
ニング、サンドブラスト、エツチングなど罠よって加工
して内部構造物表面を、凹凸化することにより、内部構
造物表面に堆積する堆積物の内部応力を緩和し、剥離を
防止するように構成している。In order to achieve the above object, the present invention involves processing the surface of the internal structure in the chamber of a film forming apparatus such as a vacuum evaporation apparatus by means of honing, sandblasting, etching, etc. to make the surface of the internal structure uneven. This structure is configured to relieve the internal stress of deposits deposited on the surface of the internal structure and prevent peeling.
以下本発明を実施例によって詳細に説明する。The present invention will be explained in detail below using examples.
第２図は本発明の一実施例による真空蒸着装置の概要を
示す概略図、第３図は同じ（チャンバ内の内部構造物の
表面部分を示す拡大断面図である。FIG. 2 is a schematic diagram showing an outline of a vacuum evaporation apparatus according to an embodiment of the present invention, and FIG. 3 is an enlarged sectional view of the same (an enlarged sectional view showing a surface portion of the internal structure inside the chamber).
第２図に示すよ’）Ｋ、ｆｉ、空蒸着装置は機台３に対
して開閉可能なチャンバ４を有し７ていて、機台３の中
火部にはシャッター５によって所望特級われる蒸発物質
を収容するホートロを有している。As shown in FIG. It has a hotro that stores substances.
ｆた、ボート６０周辺にはヒーターを内蔵したヒーター
カバー７を配設するとともに、チャンバ４の上部にはチ
ャンバ４に支持されかつ回動するチャージ治具８が取り
付けられている。このチャージ治具８には、たとえはウ
ェハ等の被処理物が取り付けられる。また、チャンバ４
の内壁には蒸着物質の付着を防止する防着板９が配設さ
れている。Furthermore, a heater cover 7 containing a built-in heater is disposed around the boat 60, and a charging jig 8 that is supported by the chamber 4 and rotates is attached to the upper part of the chamber 4. A workpiece to be processed, such as a wafer, is attached to this charging jig 8 . Also, chamber 4
A deposition prevention plate 9 is provided on the inner wall of the chamber to prevent deposition substances from adhering.
また、この実施例ではチャンバ４内の内部構造物である
シャッター５．チャージ治具８．防着板９゜ヒーターカ
バー７等の表面はホーニング処理が施され、第３図に示
すように内部構造物１の表面はｌＯμｍ程度の深さの凹
凸面となっている。Further, in this embodiment, a shutter 5. which is an internal structure within the chamber 4. Charging jig 8. The surfaces of the anti-adhesion plate 9° heater cover 7, etc. are honed, and as shown in FIG. 3, the surface of the internal structure 1 has an uneven surface with a depth of about 10 μm.
このような実施例によれば、内部構造物ｌの表面が凹凸
面となっていることから、蒸着物質からなる堆積物２の
内部応力は緩和される。この結果、堆積物２の剥離は極
めて少なくなり、チャンバ４内のＮｓ（窒累）のリーク
中に異物となって巻上り、被処理物であるウェハの表面
に付着するような従来多発してい１こウェハの汚染は少
なくなり、異物不良率は軽減できろ。According to this embodiment, since the surface of the internal structure 1 is uneven, the internal stress of the deposit 2 made of the vapor-deposited material is relaxed. As a result, the peeling of the deposit 2 is extremely reduced, and unlike conventional methods, when Ns (nitrous deposits) leaks in the chamber 4, it becomes foreign matter and rolls up and adheres to the surface of the wafer, which is the object to be processed. 1) Contamination of wafers will be reduced, and the defect rate due to foreign substances will be reduced.
なお、前記実施例において、初期の蒸着物儒の堆積前に
は十分高真發に排気し、加熱ガス出しを行なうことによ
り、膜の剥離防止効果を高めることができる。In the above embodiments, the effect of preventing peeling of the film can be enhanced by exhausting at a sufficiently high level and releasing heated gas before the initial deposition of the evaporated material.
また、本発明は前記実施例に限定されプ、ｃい。すなわ
ち、被膜形成装置としては、スパッタ装置。Furthermore, the present invention is not limited to the above embodiments. That is, the film forming apparatus is a sputtering apparatus.
ＣＶＤ装置等であってもよい。また、内部ｍ遺物の表面
の凹凸加工は、サンドブラスト、部分エツチング等他の
加工方法でもよい。It may also be a CVD device or the like. In addition, other processing methods such as sandblasting, partial etching, etc. may be used to process the surface of the internal relic.
また、この表面処理は、鼻發チャンバ内部、蒸発シ、ヒ
ータ一部がすべて大気にさらされる。完全オープニング
チャンバ形装置はもとより、蒸発源、ヒータ一部などの
主要部分が大気−を卜されることなく常に高’Ｊ、壁に
たもたれる。ロードロック真空装考に適用すれば特に効
果がある。Furthermore, during this surface treatment, the inside of the rhinoplasty chamber, the evaporator, and a portion of the heater are all exposed to the atmosphere. In addition to the completely open chamber type device, the main parts such as the evaporation source and part of the heater are always leaning against the wall at a high height without being exposed to the atmosphere. It is particularly effective when applied to load-lock vacuum systems.
以上のように本発明によれば、内部構造物からの堆積物
の剥離を防止することができることから、ウェハ等の被
処理物に堆積物微片による異物の付着は大幅圧低減でき
るため、異物付着不良率を軽減でき、歩留の向上を図る
ことができる。As described above, according to the present invention, it is possible to prevent deposits from peeling off from internal structures, and the adhesion of foreign matter due to deposit particles to a processed object such as a wafer can be significantly reduced. The adhesion failure rate can be reduced and the yield can be improved.
第１図は従来の真空蒸着装置の内部構造物の表面部分を
示す拡大断面図、
第２図は本発明の一実施例による真空蒸着装置の概要を
示すＲ略図、
第３図は同じ（チャンバ内の内部構造物の表面部分を示
す拡大断面図である。
１・・・内部構造物、２・・・堆積物、４・・・チャン
バ、５・・・シャッター、７・・・ヒーターカバー、８
・・・チャージ治具、９・・・防着板。
第 Ｔ 図
第 ３ 図
第 ２ 図
とよ５ひ■７FIG. 1 is an enlarged sectional view showing the surface part of the internal structure of a conventional vacuum evaporation apparatus, FIG. It is an enlarged cross-sectional view showing the surface portion of the internal structure inside. 1... Internal structure, 2... Deposit, 4... Chamber, 5... Shutter, 7... Heater cover, 8
...Charging jig, 9...Adhesion prevention plate. Figure T Figure 3 Figure 2 Figure 5 7
Claims (1)
いて、被処理物を処理するチャンバ内における各構造物
の表面を凹凸面状とすることを特徴とする被膜形成装置
。1. A film forming apparatus for vacuum evaporation, sputtering, CVD, etc., characterized in that the surface of each structure in a chamber for processing an object to be processed is made into an uneven surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8488082A JPS58202535A (en) | 1982-05-21 | 1982-05-21 | Film forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8488082A JPS58202535A (en) | 1982-05-21 | 1982-05-21 | Film forming device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58202535A true JPS58202535A (en) | 1983-11-25 |
Family
ID=13843082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8488082A Pending JPS58202535A (en) | 1982-05-21 | 1982-05-21 | Film forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58202535A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6235627A (en) * | 1985-08-09 | 1987-02-16 | Nec Kyushu Ltd | Semiconductor substrate holding jig of semiconductor manufacturing device |
| WO1998044538A2 (en) * | 1997-03-27 | 1998-10-08 | Heraeus Quarzglas Gmbh | Quartz glass component used in the production of semiconductors |
| JP2002309370A (en) * | 2001-04-10 | 2002-10-23 | Anelva Corp | Sputtering apparatus |
| US7648782B2 (en) | 2006-03-20 | 2010-01-19 | Tokyo Electron Limited | Ceramic coating member for semiconductor processing apparatus |
| US7767268B2 (en) | 2005-09-08 | 2010-08-03 | Tocalo Co., Ltd. | Spray-coated member having an excellent resistance to plasma erosion and method of producing the same |
| US7850864B2 (en) | 2006-03-20 | 2010-12-14 | Tokyo Electron Limited | Plasma treating apparatus and plasma treating method |
| US8231986B2 (en) | 2005-08-22 | 2012-07-31 | Tocalo Co., Ltd. | Spray coating member having excellent injury resistance and so on and method for producing the same |
| CN113594014A (en) * | 2020-04-30 | 2021-11-02 | 中微半导体设备(上海)股份有限公司 | Component, plasma reaction device and component processing method |
-
1982
- 1982-05-21 JP JP8488082A patent/JPS58202535A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6235627A (en) * | 1985-08-09 | 1987-02-16 | Nec Kyushu Ltd | Semiconductor substrate holding jig of semiconductor manufacturing device |
| WO1998044538A2 (en) * | 1997-03-27 | 1998-10-08 | Heraeus Quarzglas Gmbh | Quartz glass component used in the production of semiconductors |
| WO1998044538A3 (en) * | 1997-03-27 | 1998-12-30 | Heraeus Quarzglas | Quartz glass component used in the production of semiconductors |
| JP2002309370A (en) * | 2001-04-10 | 2002-10-23 | Anelva Corp | Sputtering apparatus |
| US8231986B2 (en) | 2005-08-22 | 2012-07-31 | Tocalo Co., Ltd. | Spray coating member having excellent injury resistance and so on and method for producing the same |
| US7767268B2 (en) | 2005-09-08 | 2010-08-03 | Tocalo Co., Ltd. | Spray-coated member having an excellent resistance to plasma erosion and method of producing the same |
| US8053058B2 (en) | 2005-09-08 | 2011-11-08 | Tocalo Co., Ltd. | Spray-coated member having an excellent resistance to plasma erosion and method of producing the same |
| US7648782B2 (en) | 2006-03-20 | 2010-01-19 | Tokyo Electron Limited | Ceramic coating member for semiconductor processing apparatus |
| US7850864B2 (en) | 2006-03-20 | 2010-12-14 | Tokyo Electron Limited | Plasma treating apparatus and plasma treating method |
| CN113594014A (en) * | 2020-04-30 | 2021-11-02 | 中微半导体设备(上海)股份有限公司 | Component, plasma reaction device and component processing method |
| CN113594014B (en) * | 2020-04-30 | 2024-04-12 | 中微半导体设备(上海)股份有限公司 | Component, plasma reaction device, and component processing method |
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