JPS58169918A - ワイヤボンダ - Google Patents

ワイヤボンダ

Info

Publication number
JPS58169918A
JPS58169918A JP57051237A JP5123782A JPS58169918A JP S58169918 A JPS58169918 A JP S58169918A JP 57051237 A JP57051237 A JP 57051237A JP 5123782 A JP5123782 A JP 5123782A JP S58169918 A JPS58169918 A JP S58169918A
Authority
JP
Japan
Prior art keywords
wire
electrode
ball
tip
wire bonder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57051237A
Other languages
English (en)
Other versions
JPH0474859B2 (ja
Inventor
Susumu Okikawa
進 沖川
Michio Okamoto
道夫 岡本
Hitoshi Horimuki
堀向　仁
Michio Tanimoto
道夫 谷本
Hiromichi Suzuki
博通 鈴木
Wahei Kitamura
北村　和平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57051237A priority Critical patent/JPS58169918A/ja
Priority to KR1019830001087A priority patent/KR920005630B1/ko
Priority to US06/476,268 priority patent/US4564734A/en
Priority to GB8308622A priority patent/GB2117299B/en
Priority to FR8305253A priority patent/FR2524704B1/fr
Priority to IT2038283A priority patent/IT1161808B/it
Publication of JPS58169918A publication Critical patent/JPS58169918A/ja
Priority to GB08412000A priority patent/GB2137914A/en
Publication of JPH0474859B2 publication Critical patent/JPH0474859B2/ja
Granted legal-status Critical Current

Links

Classifications

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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K28/00—Welding or cutting not covered by any of the preceding groups, e.g. electrolytic welding
    • B23K28/02—Combined welding or cutting procedures or apparatus
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K31/00—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups
    • B23K31/02—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to soldering or welding
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K9/00—Arc welding or cutting
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明はワイヤボンダに関し、特にアルミニウム線など
の酸化しやすい金属の細線を熱圧着法でボンディングで
きるようＫしたワイヤボンダに関するものである。
半導体装置の製造工程のひとつに素子ペレットの電極パ
ッドとパッケージ側のリードとをワイヤにて接続するワ
イヤボンディング工程があり、現在では金線（Ａｕワイ
ヤ）を用いた熱圧着法と、アルミニウム＃　（１１ワイ
ヤ）を用いた超音波法が多く使用されている。Ａｕ　ワ
イヤの熱圧着法は、所闘ネイルヘッドポンディ／グと称
し、Ａｕワイヤの先端を水素トーチや放電アークにて加
熱溶融して金ボールを形成し、この金ボールをボンディ
ング部位に押圧させながら圧着させるもので、強固なボ
ンディングを可能にすると共にボンディングの方向性が
存在しないという利点を有するものの、ボンディング部
位がベレッ）を極バッドのようなアルミニウム材のとき
にはパープルブレーグ現象が生じてボンディング強度が
低下したり、金価格の高騰によってコスト嵩になる郷の
問題がある。一方、Ａ１ワイヤの超音波法はＡ！ワイヤ
を超音波振動によって固着させるため、低価格にできる
という利点を有するものの、ボンディングの方向性が存
在するためにワイヤボンダの構造が複雑になると共にボ
ンディングスピードが低いという問題がある。
このため、近年では両ボンディング法の夫々の利点を生
かし得るように、ＡＪワイヤを用いた熱圧着法、即ちＡ
１ワイヤの先端にボールを形成してネイルヘッドボンデ
ィングを行なう方法が考えられている。しかしながら、
従来のＡｕワイヤを使用して（・るワイヤボンダをその
まま用いて＾ｐワイヤでネイルヘッドボンディングを行
なってもＡＪワイヤの先端に良好なボールを形成するこ
とはできず、したがって高信頼性のワイヤボンディング
を行なうことは困難である。
【 即ち、本発明者が、第１図に示すように、Ａ１ワイヤー
と放電用の電＠２とに夫々高電圧、源３の負電位と正電
位を加え、かつＡ４ワイヤ先端をＡｒガス雰囲気に保っ
た状態で両者間に放電アークを発生させてＡ４のボール
を形成したところ、形成されたボールの真球度は悪くか
つボール直上のネック部位〈びれが生じた。このため、
このような状態でワイヤボンディングを行なうと圧着さ
れたボールの円形状が悪くかつ正しい位置へのボンディ
ングが困難になると共に前述したくびれの部分から断線
され易くなり、結果的にボンディングの信頼性が低下す
ることになる。
このように、Ａ１ワイヤのボールの真球度が悪くかつく
びれが生ずる原因としては、Ａ１ワイヤの表面に形成さ
れているアルミナ（Ａ　ＩＪｔ　Ｏｑ　）がＡｅワイヤ
の溶融およびボール形成の障害になること、また、放電
アークがＡＩ３ワイヤの先端近傍に式がってエネルギ分
散が生じてしまうこと等が大傘な原因になると考えられ
【いる。
したがって本発明の目的は、Ａ１などの酸化しやすい金
属からなるワイヤと放電用電極との間を還元性雰囲気に
保って両者間に放電アークを生成せしめるよう構成する
ことにより、金属ワイヤ表面の酸化物の影響をなくして
良好な球形のボールを形成することができるワイヤボン
ダを提供することにある。
また、本発明の他の目的は、ワイヤと放電電極との間の
放電にサーマルピンチ作用が生ずるように両者間のガス
雰囲気を構成し、更に好ましくはクリーニング作用が生
じないように両者の極性を設定することｋより、真球度
のよいボールの形成と共Ｋ〈びれのないボールの形成を
可能圧したワイヤボンダを提供することに４１ある。
以下１本発明を図示の実施例により説明する。
第２図は本発明のワイヤボンダの要部の構成図であり、
ＸＹテーブルｌｌ上上搭載したボンディングヘッドＩＩ
Ｋはボンディングアーム１２をその基端において枢支し
、キャピラリ１３を固設した先端を図外のカム磯構によ
って上下に揺動できるよ５ＫＬ、ている。前記ボンディ
ングアーム１２のよ＠には１例えば電磁ソ・レノイド１
４にて作動される一対のクランパアーム１５．１６を設
置し、これらアーム１５．１６の各先端を前記キャピラ
リ１３の直上位ｆＫ配設してクランパ１７を形成してい
る。１はへ１ワイヤであり、図外のスプールから引き出
され、ガイド１８を挿通（７た後はクランパ１７間を通
ってキャピラリ１３に挿通されろ。なお、ワイヤとして
は、Ａ１ワイヤに限定されずＳｉ入り人１などの酸化し
やす（・金属ワイヤであってもよいことは勿論である。
一方、１９はボンディングステージであり、被ボンデイ
ング体としての半導体構体２０を載置し、前記キャピラ
リ１３の上下動くよってリードフレーム２１と素子ベレ
ット２２との間にＡ６ワイヤ１を接続させる。
更に、２３は本発明の特徴とする放電電極部であり、前
記キャピラリ１３の近傍に独立１２て設けている。この
放電電極部２３は、第３図および第４図に合わせて示す
ように１、全体を略ｌ、字状に形成した中空の電極２４
を有駿、、その上側の端部に一体的に設けた枢軸２５を
装置固定部の軸受２６に軸支させることにより、電極２
４全体を図示矢印方向に揺動でき、これにより電極２４
の下側部２４１を前記キャピラリ１３の下方位置、つま
りＡｎワイヤ１の先端の直下位置とキャピラリ１３０側
方位置（退避位置）との間で移動させることができる。
この場合、前記枢軸２５の一部にクランク２７を形成し
、このクランク２７と新たに設けた電磁ソレノイド２８
とを連結杆２９にて連結することにより、ンレノイド２
８の往復移動を電極２４の前記した揺動に変化で舞る。
更Ｋ、前記電極２４の下側部２４ｍ上面には複数個の透
孔３０を形成してその中空内部と連通させると共に、こ
の下側部２４ｍを包囲するよう圧して円筒状のカバー３
１を取着している。このカバー３１は上側一部に略円周
の４分の１の切欠き３２を形成し、電極２４が下動した
ときＫＡＪＡ１ワイヤ１端がこの切欠き３２を通してカ
バー３１内に侵入位置されるようＷＣしている。一方、
前記電極２４０基端には中空内部に連通するチェーブ３
３を連設し、このチ凰−プ３３を通して前記電極２４内
Ｋｕｋ述するガスを供給する。また、この電１に２４と
前記クランパ１７との関には、図示のような電源回路３
４を接続し、これによりクランパ１７、即ちこれに導通
されるＡ１ワイヤｌを陽極とすると共に電極２４を陽極
とし、電極２４からＡＩワイヤＩＫ向かって放電アーク
を生成させるようＫして（・る。
そして、本実施例においては前記したガスとして還元作
用のあるガス、例えばＨ，、ＣＯ，Ｎ、０゜ＣＨ，等の
ガスを使用し、これらのガスを電４ｉｌ１２４の下側部
２４ｍの透孔３０からカバー３１内に噴出させ、カバー
内つまり電極２４とＡ１ワイヤ１との間を還元性ガス雰
囲気に保つよ５Ｋしているのである。
以上の構成によれば、最初に電磁ルノイド２８の伸長作
用によってクランク２７および枢軸２５を揺動すれば、
電極下側部２４ｍは下方へ揺動してＡｇワイヤ１の直下
位置に揺動位置され、ｊｌワイヤ１の先端をカバー３１
内に侵入させる。そして、電極２４の中空内部を通して
透孔３０から噴出された還元性ガスにより、カバー３１
内、つまりＡ１ワイヤ１と電極２４との間を還元性ガス
雰囲気に保持した上で電源回路３４をオン作動すれば、
Ａ１ワイヤｌと電ｆｉ２４との間で放電アークが発生し
、このアークのエネルギによってＡ１ワイヤ１先端が溶
融してボールが形成されることｋなる。このとき、本例
ではＡＪワイヤ１は還元性ガス雰非気でポール形成が行
なわれるため、Ａ１７４１表面のアルミナが還元されて
アルミニウムとなりこの状態で溶融されるので、ＡＪワ
イヤ先端は内部および表面の全体が均一に溶融されるこ
とになり、したがって均一な表面張力が発生して真球度
の高いボールが形成されることになるのであろう また、このとき生成される放電アークは、Ａ６ワイヤと
電極の極性に基づき、礪１ｋ２４からＡＡワイヤ１に向
かつそ生ずるので、新組クリーニング作用（アークがＡ
４７４１表面の新しい配化膜を求めて走り回る現象、ｌ
ワイヤ先端からその近傍の広い範囲にわたってアークが
生じる作用）が生じることはなく、これによりＡ８ワイ
ヤのボール形成−所以外に熱の形番をおよばすことはな
い。したがって、ボール直上部にくびれを生成させるこ
ともない。
ボールの形成後は、電磁ソレノイド２８の短縮によって
枢軸２５および電極２４は上方へ向かって揺動され、電
極下側部２４ａはｆｉｌｊワイヤｌの直下位置から退避
される。したがって、ポジディングアーム１２の揺動に
伴なってキャピラリ１３を下動させれば、Ａ４ワイヤ１
を半導体構体２０のペレット２２上に熱圧着させること
ができ米のであり、形成したボールの真球度の向上によ
って信頼性の高いワイヤポンディレグを行なうことがで
きるのである。
次に本発明の他の実施例を説明する。他の例は電極２４
内に供給するガスとして、前例の還元性ガスに加えてサ
ーマルピンチ作用のあるガスを添加したガスを使用する
点に特徴を有する。この種□、：１・。
のガスとしてはＨ，、Ｈａ　　、ＣＨ４、Ｎ、勢があり
、このガスがＡｌワイヤｌと電４１２４との間の雰囲気
中に存在すれば、放電アークがＡ４ワイヤ１の先端部に
集中するという新組サーマルピンチ作用が得られ、これ
により放電エネルギがＡ１ワイヤ先端に集中してボール
形成に有効に利用され。
真球度の向上と共に省エネルギの点でも有効である。な
お、このサーマルピンチ作用はＡＪワイヤと電極の極性
に拘らず発生するので、電源回路３４が図示のものに限
定されることはない。また、ガス［Ｈ，、ＣＨ，、ＣＯ
を使用すれば、Ｈ，、Ｃ’桟。
ＣＯは両方の作用を有しているので単独で両方の効果を
得ることができる。
以上のよう圧して形成された半導体装置の一例を１１５
図に示すうこの半導体装置４（）けり一ド７ｖ−ム２１
上にべＬ／フット２をＡｕ−８ｉ共晶４１勢にて固着し
た上で、Ａ４ワイヤＩＫでベレット２２のパッド４２と
リードフレーム２１のインナリード４３をワイヤ接続し
、レジ７４４にてモールド刺止して（・る。ＡＪワイヤ
１は前述のようにボール形成した上で熱圧着により接続
を行なう。
また、ＡＪワ”イヤ１とインナリード４３との接続を良
好なものにするためにインナリード４３の表ｌｌＣＡｇ
またはＡｕのめっき−４５を形成している。
このような半導体装置では、Ａｇワイヤに代えてＡβワ
イヤを使用するので低価格に製作できる。
また、熱圧着法を用いているのでボンディングの方向性
がなく、ワイヤボンダの構成（特にボンディングステー
ジやボンディングヘッドの構成）を簡単化することがで
き、かつボンディングスピードが向上で舞る。また、ボ
ールの真球度が向上したことにより、ボンディングの信
頼性を向上することもで良る。
ここで、電極部２３の構成としては、第６図ないし第８
図に示すよ５な構成としてもよい。第６図のものは、電
極２４の下側部２ｊｌＫ取着するカバー３１Ａの一端を
開放する一方、カバー３１Ａの一部忙ガス供給口３５を
形成し、この供給口３５を通してカバー３１Ａ内にガス
を満たそうとするものであり、Ａ１ワイヤｌの先端にガ
スを吹舞かける方式である。第７図のものは、カバー３
１８の両端を閉塞する点では第３図のものと同時である
が、ガス供給口３６をカバー３１ＢＫ直接設けてガスを
切欠ｌｌ３２へ向けて直接的に直流させ、ＡＪ　’ツイ
ヤｌの近傍でガスを噴きＥげるよう忙した方式である。
、第８図のものは、前述の各側のものとは全く異なりキ
ャピラリ１３の外周にカバー３７を一体に８着し、キャ
ピラリ１３とカバー３７との間にガスを供給することに
より、ガスをカバー３７の下端開口３８からＡＩ３ワイ
ヤ１の先端に吹き下げるようＫした方式である。
これらの各側においても、Ａ１ワイヤの先端を所定のガ
ス雰囲気に保持する点では全て共通しており、このガス
Ｋｌ１元性ガスを使用すること、または還元性ガスとサ
ーマルピンチ作用のあるガスとの混合ガスを使用するこ
とは必要に応じて選択できる。
なお１本Ｑ明においては、放電用電源の電圧。
電流１時間等の電気的要因やｌワイヤと電極との距離等
の機械的′要因、更にはガス濃度等の化学的要因等圧よ
ってボールの真球度やその寸法等に若干の影響を受ける
ことがあり、これらの要因は要求されるボールの寸法等
に合わせて適宜設定することか肝要である。因みに、Ｈ
１濃度変化によるボール径／ワイヤ径の特性変化を第９
図に示す。
この特性はＮ、ガス中に含まれるＨｔ湊度で示しており
、Ｈ！濃度が高い程ポールが真球に近づくことがわかる
。したがって、Ｈ２消費量をコスト等を比較した上で満
足で舞るボールの得られるＨ７濃度に設定すればよい。
以上のように本発明のワイヤボンダによれば、ワイヤと
電極との間、更に首えばワイヤ先端の雰囲気を還元性雰
囲気に保って両者間に放電アークを生成せしめるよう構
成し、更にサーマルピンチ作用が生ずるようなガス雰囲
気に保つように構成しているので、Ａ１などの酸化容易
な金ｊＩ＆製ワイヤ先端に形成するボールの真球度を向
上すると共にワイヤのくびれを防止し、更にワイヤと電
極との極性を考慮することにより前述した真球度やくび
れを更に向上し、ＡＡなμの酸化容易な金属製ワイヤを
使用したワイヤボンディングの信頼性を一層向上するこ
とができるという効果を奏する。
【図面の簡単な説明】
第１図は従来装置の一部の概略構成図、第２図は本発明
のワイヤボンダの一部の正面図、第３図はその要部の拡
大斜視図、第４図は第３図の八−Ａ線断面図、１ｓ５図
は半導体装置の断面図、第６図ないし第８図は夫々異な
る変形例を示す斜視図および正面断面図、第９図はＨ，
濃度とボール形状の関係を示す特性図である。 １　・ＡＪ　ワイヤ、１０・・ＸＹテーブル、１１・・
・ボンディングヘッド、１２・・ボンディングアーム、
１３・・キャピラリ、１７・・クランパ、１９・・・ボ
ンディングステージ、２０・・・半導体構体、２１　・
リードフレーム、２２・・・ベレット、２３・・・放ｔ
ｔ極部、２４・・・電極、２４ａ・・・下側部、３０・
・・透孔、３１．３１Ａ、３１Ｂ・・・カバー、３２・
・・切欠き、３４・・電源、３５．３６・・・供給口、
３７・・・カバー、４０・・・半導体装置、４２・・・
パッド、４３・・・インナリード、４４・・・レジン。 代理人　弁場士　　薄　１）利、ｊｌｉ　、、’：、−
ヘ第　　３　　　［”４ ２．、？”　”　’ 第ｄ図

Claims (1)

  1. 【特許請求の範囲】 １　ワイヤの先端に放電アークを利用してボールを形成
    し、このボールを被ボンデイング体に熱圧着してワイヤ
    の接続を行ｆｒうようＫしたワイヤボンダにおいて、前
    記ワイヤの先端と、これに対向配置される放電用の電極
    との間の雰囲気を還元性ガス雰囲気に保持できるように
    構成したことを特徴とするワイヤボンダ。 ２、　ワイヤを陽極に、電極を陰極として放電アークを
    発生させるよう構成してなる特許請求の範囲第１項記載
    のワイヤボンダ。 ３、電極をワイヤの先端直下位置から退避で伴るように
    構成してなる特許請求の範囲第１項又は第２項記載のワ
    イヤボンダ。 ４、電極を中空に形成すると共Ｋｔｆｉ下側部にはワイ
    ヤ先端を包囲し得るカバーを付設し、かつカバー内の電
    極下側部には中空内部に連通する透孔を形成してなる特
    許請求の範囲第１項乃至第３項のいずれかに記載のワイ
    ヤボンダ。 ５、　ワイヤの先端に放電、アークを利用してボールを
    形成し、このボールを被ボンデイング体に熱圧着してワ
    イヤの接続を行なうよ５Ｋしたワイヤボンダにおいて、
    前記ワイヤの先端と、これに対向配置される放電用の電
    極との間の雰囲気を還元性ガスおよびサーマルピンチ作
    用を有するガスの混合ガス雰囲気に保持できるように構
    成したことな特徴とするワイヤボンダ。 ６、　ワイヤを陽極に、電極を陰極として放電アークを
    発生させるよう構成してなる特許請求の範囲第５項記載
    のワイヤボンダう ７、　電極をワイヤの先端直下位置から退避できるよう
    に構成してなる特許請求の範囲第５項又は第６項記載の
    ワイヤボンダ。 ８、電極を中空に形成すると共に電極下側部にはワイヤ
    先端を包囲し得るカバーを付設し、かつカバー内の電極
    下側部には中空内部に連通する透孔を形成してなる特許
    請求の範囲第５項乃至第７項のいずれかに記載のワイヤ
    ボンダ。
JP57051237A 1982-03-31 1982-03-31 ワイヤボンダ Granted JPS58169918A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP57051237A JPS58169918A (ja) 1982-03-31 1982-03-31 ワイヤボンダ
KR1019830001087A KR920005630B1 (ko) 1982-03-31 1983-03-17 와이어본더를 사용한 수지봉지 반도체장치의 제조방법
US06/476,268 US4564734A (en) 1982-03-31 1983-03-17 Wire bonder
GB8308622A GB2117299B (en) 1982-03-31 1983-03-29 Improvements in wire bonders
FR8305253A FR2524704B1 (fr) 1982-03-31 1983-03-30 Appareil pour la fixation de fils par soudage, notamment pour composants a semi-conducteurs
IT2038283A IT1161808B (it) 1982-03-31 1983-03-30 Saldafili per saldare fili sottili di metallo facilmente ossidabile con voncolo per termocompressori
GB08412000A GB2137914A (en) 1982-03-31 1984-05-10 Wire bonders

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57051237A JPS58169918A (ja) 1982-03-31 1982-03-31 ワイヤボンダ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP1078242A Division JPH01280330A (ja) 1989-03-31 1989-03-31 半導体装置

Publications (2)

Publication Number Publication Date
JPS58169918A true JPS58169918A (ja) 1983-10-06
JPH0474859B2 JPH0474859B2 (ja) 1992-11-27

Family

ID=12881333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57051237A Granted JPS58169918A (ja) 1982-03-31 1982-03-31 ワイヤボンダ

Country Status (6)

Country Link
US (1) US4564734A (ja)
JP (1) JPS58169918A (ja)
KR (1) KR920005630B1 (ja)
FR (1) FR2524704B1 (ja)
GB (2) GB2117299B (ja)
IT (1) IT1161808B (ja)

Cited By (3)

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US4732313A (en) * 1984-07-27 1988-03-22 Kabushiki Kaisha Toshiba Apparatus and method for manufacturing semiconductor device
JPH0737889A (ja) * 1993-07-16 1995-02-07 Nec Corp 半導体製造装置
US6455785B1 (en) 1998-10-28 2002-09-24 International Business Machines Corporation Bump connection with stacked metal balls

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US4476365A (en) * 1982-10-08 1984-10-09 Fairchild Camera & Instrument Corp. Cover gas control of bonding ball formation
US4549059A (en) * 1982-11-24 1985-10-22 Nec Corporation Wire bonder with controlled atmosphere
GB2165178A (en) * 1984-10-05 1986-04-09 Hitachi Ltd Method and apparatus for wire bonding
US4705204A (en) * 1985-03-01 1987-11-10 Mitsubishi Denki Kabushiki Kaisha Method of ball forming for wire bonding
FR2586599B1 (fr) * 1985-09-03 1990-01-12 Thomson Csf Dispositif de soudage par thermocompression
US4976393A (en) * 1986-12-26 1990-12-11 Hitachi, Ltd. Semiconductor device and production process thereof, as well as wire bonding device used therefor
DE3851901T2 (de) * 1987-01-26 1995-04-13 Hitachi Ltd Anschweissen eines Drahtes.
US5285949A (en) * 1987-01-26 1994-02-15 Hitachi, Ltd. Wire-bonding method, wire-bonding apparatus, and semiconductor device produced by the wire-bonding method
US5031821A (en) * 1988-08-19 1991-07-16 Hitachi, Ltd. Semiconductor integrated circuit device, method for producing or assembling same, and producing or assembling apparatus for use in the method
JP3455626B2 (ja) * 1996-03-13 2003-10-14 株式会社東芝 半導体装置の製造方法および製造装置
DE29608277U1 (de) * 1996-04-30 1996-09-19 F&K Delvotec Bondtechnik GmbH, 85521 Ottobrunn Vorrichtung zum Ball-Bonden
US6337453B1 (en) * 1999-06-25 2002-01-08 West Bond, Inc. Method and apparatus for arc-forming a bonding wire ball with attenuated electro-magnetic interference
US6234376B1 (en) * 1999-07-13 2001-05-22 Kulicke & Soffa Investments, Inc. Supplying a cover gas for wire ball bonding
US6450713B2 (en) * 1999-09-10 2002-09-17 Hewlett-Packard Company Print media ejection system
TWI222388B (en) * 2002-07-19 2004-10-21 Esec Trading Sa Device with an electrode for the formation of a ball at the end of a wire
JP4749177B2 (ja) * 2006-02-15 2011-08-17 パナソニック株式会社 接続構造体および接続構造体の製造方法
US7628307B2 (en) * 2006-10-30 2009-12-08 Asm Technology Singapore Pte Ltd. Apparatus for delivering shielding gas during wire bonding
US8357998B2 (en) * 2009-02-09 2013-01-22 Advanced Semiconductor Engineering, Inc. Wirebonded semiconductor package
US8096461B2 (en) * 2009-09-03 2012-01-17 Advanced Semiconductor Engineering, Inc. Wire-bonding machine with cover-gas supply device
JP5916814B2 (ja) * 2014-08-06 2016-05-11 株式会社カイジョー ボンディング方法及びボンディング装置

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JPS5440570A (en) * 1977-07-26 1979-03-30 Welding Inst Method of bonding high voltage aluminum ball
JPS55123198A (en) * 1979-03-16 1980-09-22 Tokyo Shibaura Electric Co Method of forming ball of aluminum wire end

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JPS5623750A (en) * 1979-08-01 1981-03-06 Hitachi Ltd Ultrasonic wire bonding apparatus
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US4388512A (en) * 1981-03-09 1983-06-14 Raytheon Company Aluminum wire ball bonding apparatus and method
US4390771A (en) * 1981-05-11 1983-06-28 Fairchild Camera & Instrument Corp. Bonding wire ball forming method and apparatus
US4387283A (en) * 1981-08-03 1983-06-07 Texas Instruments Incorporated Apparatus and method of forming aluminum balls for ball bonding
JPS58154241A (ja) * 1982-03-10 1983-09-13 Hitachi Ltd 半導体装置及びその製法
US4476365A (en) * 1982-10-08 1984-10-09 Fairchild Camera & Instrument Corp. Cover gas control of bonding ball formation

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JPS5440570A (en) * 1977-07-26 1979-03-30 Welding Inst Method of bonding high voltage aluminum ball
JPS55123198A (en) * 1979-03-16 1980-09-22 Tokyo Shibaura Electric Co Method of forming ball of aluminum wire end

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4732313A (en) * 1984-07-27 1988-03-22 Kabushiki Kaisha Toshiba Apparatus and method for manufacturing semiconductor device
JPH0737889A (ja) * 1993-07-16 1995-02-07 Nec Corp 半導体製造装置
US6455785B1 (en) 1998-10-28 2002-09-24 International Business Machines Corporation Bump connection with stacked metal balls
US7021521B2 (en) 1998-10-28 2006-04-04 International Business Machines Corporation Bump connection and method and apparatus for forming said connection

Also Published As

Publication number Publication date
JPH0474859B2 (ja) 1992-11-27
KR920005630B1 (ko) 1992-07-10
GB8412000D0 (en) 1984-06-13
FR2524704A1 (fr) 1983-10-07
GB2117299B (en) 1986-05-21
FR2524704B1 (fr) 1987-03-06
US4564734A (en) 1986-01-14
GB8308622D0 (en) 1983-05-05
KR840004306A (ko) 1984-10-10
GB2117299A (en) 1983-10-12
GB2137914A (en) 1984-10-17
IT8320382A0 (it) 1983-03-30
IT1161808B (it) 1987-03-18

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