JPS58153344A - Retainer type wafer chuck - Google Patents
Retainer type wafer chuckInfo
- Publication number
- JPS58153344A JPS58153344A JP3375982A JP3375982A JPS58153344A JP S58153344 A JPS58153344 A JP S58153344A JP 3375982 A JP3375982 A JP 3375982A JP 3375982 A JP3375982 A JP 3375982A JP S58153344 A JPS58153344 A JP S58153344A
- Authority
- JP
- Japan
- Prior art keywords
- retainer
- chuck
- ring
- thickness
- flatness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、半導体製造装置に用いるウェハチャックに関
するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wafer chuck used in semiconductor manufacturing equipment.
まず従来から半導体製造装置に用いられるウェハチャッ
クを第１図（イ）、（ロ）により説明する。第１図（イ
）は従来のウェハチャックの平面図でめ９、同図（ロ）
はその断面図でるる。第１図（イ）、（ｃＯにおいて、
ウェハＩＶｉｆｓ２内を真空吸引３することによシ、大
気圧でチャック面４に密着している。このチャック面４
は、鳥い吸着力と、良好な平面度を有し、かつメンテナ
ンスが容易なことおよび耐久力があること等が要求され
る。従来はフライス盤による形状製作、研削盤による面
仕上げ、さらにラップ仕上げおよび面処理等の憬械加工
で製作していた。First, a wafer chuck conventionally used in semiconductor manufacturing equipment will be explained with reference to FIGS. 1(a) and 1(b). Figure 1 (a) is a plan view of a conventional wafer chuck.
is its cross-sectional view. Figure 1 (a), (at cO,
By vacuum suction 3 inside the wafer IVifs 2, it is brought into close contact with the chuck surface 4 at atmospheric pressure. This chuck surface 4
It is required to have strong adsorption power, good flatness, easy maintenance, and durability. Conventionally, they were manufactured using a milling machine to create the shape, a grinder to finish the surface, and further machining such as lapping and surface treatment.
第２図（イ）は、ウェハを平坦にするダイヤフラム式チ
ャックの平面図で、同図（ロ）はその断面図である。こ
のダイヤフラム式チャック面５の厚さｔは０．４５μｍ
と薄く、かつ平面度が０，２〜０．３μｍを要求される
。このダイヤプラム式チャック面５を前記の如き従来の
機械加工で仕上げ九ところ、機械加工歪が発生し、平面
度が２００μｍ程度しかならず使用に耐え得ないという
問題があった。FIG. 2(a) is a plan view of a diaphragm chuck for flattening a wafer, and FIG. 2(b) is a sectional view thereof. The thickness t of this diaphragm chuck surface 5 is 0.45 μm
It is required to be thin and have a flatness of 0.2 to 0.3 μm. When this diaphragm type chuck surface 5 was finished by conventional machining as described above, machining distortion occurred and the flatness was only about 200 μm, making it unusable.
本発明は、前記の如き従来技術の欠点をなくし、容易に
高精度のウェハチャック面を有するリテーナ式ウェハチ
ャックを提供せんとするものである０本発明は、前記の
目的を達成せんがため、真空引きの丸め大のあいた平坦
な面上に、等厚で剛性の小さなリテーナを固定し、該リ
テーナの外周はリング状に閉じており、リング内は上下
を貫通する穴と２リンダと等厚の凸部およびリングよシ
薄い凹部からなシ、これが前記平坦な面上に固定されて
おシ、該リテーナ上に載置され九ウェハをリテーナを介
して平坦な面上に真空吸着される如く。The present invention aims to eliminate the drawbacks of the prior art as described above and easily provide a retainer type wafer chuck having a highly accurate wafer chuck surface. A retainer of equal thickness and small rigidity is fixed on a flat surface with a round-sized opening for vacuuming, and the outer periphery of the retainer is closed in a ring shape, and the inside of the ring has a hole passing through the top and bottom and two cylinders of equal thickness. A convex portion and a thin concave portion of the ring are fixed on the flat surface, and the wafer is placed on the retainer and vacuum-adsorbed onto the flat surface through the retainer. .
したものである。This is what I did.
次に第３図（イ）、（Ｅ４によシ本発明の一実施例を説
明する。Next, an embodiment of the present invention will be described with reference to FIGS. 3(A) and 3(E4).
第３図０）は本発明のリテーナを備えたクエ・・チャッ
クの平面図で、同図（ロ）はその断面図である。FIG. 3 (0) is a plan view of a square chuck equipped with the retainer of the present invention, and FIG. 3 (B) is a sectional view thereof.
第３図（イ）、（弓において、６は真空引きの穴のあい
た台１０上に接着固定９されたフェノ・チャック面、７
はウェハチャック６に接着固定８されたリテーナである
。前記ウェハチャック面６は、シリコンウェハを平面仕
上げした薄板で、その平面度は±２〜±１．０μｍのも
のである。このフェノ・チャック面６上に接着固定８さ
れるリテーナ７は、厚さむらのないリン青銅板ステンレ
ス板等をエツチング加工し、第３図（イ）、（ロ）に示
す如く、外周部はリング状７＆に閉じており、リング７
ａ内は、上下に貫通する穴７ｂと、リングと等厚の凸部
７Ｃおよびリングよシ薄い凹部７ｄとを形成する。この
ようにエツチング加工し死後、表面を硬くするため、ク
ロムメッキを施し、メッキ面をラッグ加工することによ
シ、厚さむらを１μｍ以下にする。Figure 3 (A), (In the bow, 6 is the pheno chuck surface 9 glued and fixed on the stand 10 with the vacuum hole, 7
is a retainer 8 fixed to the wafer chuck 6 with adhesive. The wafer chuck surface 6 is a thin plate made of a silicon wafer and has a flatness of ±2 to ±1.0 μm. The retainer 7, which is adhesively fixed 8 on the pheno chuck surface 6, is made by etching a phosphor bronze plate or stainless steel plate with an even thickness, and as shown in FIGS. 3(a) and 3(b), the outer periphery is It is closed in a ring shape 7&, and the ring 7
Inside a, a hole 7b penetrating vertically, a convex portion 7C having the same thickness as the ring, and a concave portion 7d thinner than the ring are formed. In order to harden the surface after etching after death, chrome plating is applied and the plated surface is lagged to reduce the thickness unevenness to 1 μm or less.
このように平面度±２〜１．０μｍに形成したウェハチ
ャック面６は、前記の如く台１０に接着固定９され、そ
のチャック面６に厚さむらが１μｍ以下のリテーナ７が
接着固定されているので、フェノ−１とチャック面６と
の間を等間隔に保つことができる。を九前記チャック面
６の吸着力は凹部７ｄの面積と真空力の積により決定さ
れ、従来のリング溝や放射溝よシも大きくなる。さらに
メンテナンスは接着部８からの部品交換であるから簡単
である。The wafer chuck surface 6 formed to have a flatness of ±2 to 1.0 μm is adhesively fixed 9 to the table 10 as described above, and the retainer 7 having a thickness unevenness of 1 μm or less is adhesively fixed to the chuck surface 6. Therefore, the distance between the phenol 1 and the chuck surface 6 can be maintained at equal intervals. The suction force of the chuck surface 6 is determined by the product of the area of the recess 7d and the vacuum force, and is larger than the conventional ring groove or radial groove. Furthermore, maintenance is simple since parts are replaced from the adhesive part 8.
以上述べえ如く１本実施例のリテーナ式つエノ・チャッ
クは、吸着力が強く、平面度が良く、かつ硬いので耐久
力がＴｏｌ＞、メンテナンスも簡単であるからウェハチ
ャックに最も必要な条件を満たしている。As mentioned above, the retainer type chuck of this embodiment has strong suction force, good flatness, and hardness, so it has durability and is easy to maintain, so it satisfies the most necessary conditions for a wafer chuck. Satisfied.
第４図ビ）は本発明の第２の実施例を示すリテーナ式チ
ャックの一部値断平面図で、同図（ロ）はその断面図で
ある。本実施例においては、リテーナ７は前述の実施例
の如く、厚さむらのないリン青銅板によ）リング状に構
成し、その内部に同一径の一球１１を井桁状に並べて固
定したものである。本実施例においてもリテーナ７は真
空吸着用の貫通穴と、外周部はりンダにより閉ざされて
いる。゛このリテーナ７とウェハチャック面６との固着
は、厚さむらが生じなければどこで固定しても良く、さ
らに接着剤で固定しなくても機械的に動かないように、
例えば周囲をリングで囲って動かないようにしても良い
。またウェハチャック面６は必ずしもシリコンウェハで
なくても、ガラス、リン青銅、ペリリューム鋼等平坦な
板であれば何んでも使用できる。またリテーナも厚さむ
らが許容範囲であれば何んでも良い。FIG. 4(b) is a partial cross-sectional plan view of a retainer type chuck showing a second embodiment of the present invention, and FIG. 4(b) is a sectional view thereof. In this embodiment, the retainer 7 is constructed in the form of a ring (made of a phosphor bronze plate with an even thickness), as in the previous embodiment, and balls 11 of the same diameter are arranged and fixed in a grid pattern inside the ring. It is. In this embodiment as well, the retainer 7 is closed with a through hole for vacuum suction and an outer periphery with lumber.゛The retainer 7 and the wafer chuck surface 6 may be fixed anywhere as long as there is no unevenness in thickness.
For example, you may surround it with a ring to prevent it from moving. Further, the wafer chuck surface 6 is not necessarily a silicon wafer, but any flat plate such as glass, phosphor bronze, perylium steel, etc. can be used. Further, any retainer may be used as long as the thickness unevenness is within an allowable range.
さらにまえ、第５図は本発明の第３の実施例を示すもの
であって、同図は平坦面１２が真の平坦面でなくてもリ
テーナ７の厚さを、図示の如く中央部分に厚みをもたせ
るようにコントロールすることによりチャック面１３を
真の平坦面に近ずけることができ、上述の例と同様の効
果が得られる。Further, FIG. 5 shows a third embodiment of the present invention, in which even if the flat surface 12 is not a true flat surface, the thickness of the retainer 7 can be adjusted to the central portion as shown. By controlling the thickness, the chuck surface 13 can be brought closer to a truly flat surface, and the same effect as in the above example can be obtained.
以上説明したように本発明によれば、平板部材で形成し
たウェハチャック・面に、リテーナが固定されているの
で、リテーナに吸着されたウェハ１とウェハチャック面
との間は等間隔に保持され、機械加工歪が発生するとい
うおそれはなくなシ、加工平面度を高精度に出すことが
できる等の効果がある。As explained above, according to the present invention, since the retainer is fixed to the wafer chuck surface formed of a flat plate member, the wafer 1 attracted to the retainer and the wafer chuck surface are held at equal intervals. , there is no fear that machining distortion will occur, and the machining flatness can be achieved with high accuracy.
ＪＩＩ１図（イ）は従来のウェハチャックの一部破断の
平面図、同図（ロ）はその断面図、第２図（イ）は従来
のウェハを平坦にするダイヤフラム式ウェハチャックの
一部破断の平面図、同図（ロ）はその断面図、第３図（
（イ）は本発明のリテーナを適用したウェハチャック部
の一例を示す一部破断の平面図、同図（ロ）はその断面
図、第４図（イ）は本発明の第２の実施例を示すリテー
ナ式ウェハチャックの一部破断の平面図、同図（ｃ４は
その断面図、第５図は本発明の第３の実施例を示すウェ
ハチャック部の断面図である。
ｌ・・・ウェハ、２・・・真空引き用穴、３・・・真空
吸引、４・・・ウェハチャックｍ、５・・・ダイヤフラ
ム式チャック面、６・・・本発明のウェハチャック面、
７・・・リテーナ、７ｍ・・・りンダ、７ｂ・・・貫通
穴、７Ｃ・・・凸部、７礁・・・凹部に８．９・・・接
着固定、１０・・・台、１１・・・鋼球。
代理人 弁理士 秋 本 正 実
第１Ｆｊ！Ｊ
（１）
第２図
（イ）
（ロ）
第３図
（イ）
（ロ）JII 1 (a) is a partially broken plan view of a conventional wafer chuck, the same figure (b) is a cross-sectional view, and Fig. 2 (a) is a partially broken plan of a conventional diaphragm type wafer chuck that flattens wafers. The plan view of , the same figure (b) is its sectional view, and the figure 3 (
(A) is a partially broken plan view showing an example of a wafer chuck part to which the retainer of the present invention is applied, (B) is a cross-sectional view thereof, and FIG. 4 (A) is a second embodiment of the present invention. A partially broken plan view of a retainer type wafer chuck showing the same figure (c4 is a cross-sectional view thereof, and FIG. 5 is a cross-sectional view of a wafer chuck part showing a third embodiment of the present invention. l... wafer, 2... vacuum hole, 3... vacuum suction, 4... wafer chuck m, 5... diaphragm type chuck surface, 6... wafer chuck surface of the present invention,
7...Retainer, 7m...Linda, 7b...Through hole, 7C...Convex part, 7 Reef...in recessed part 8.9...Adhesive fixation, 10...Stand, 11 ···wrecking ball. Agent Patent Attorney Tadashi Akimoto Minoru 1st Fj! J (1) Figure 2 (a) (b) Figure 3 (a) (b)
Claims (1)
上にリテーナを載置し、該リテーナの外周はリング状に
閉ざされ、リング内は上下に貫通する穴と、りンダと等
厚の凸部およびりングよシ薄い凹部からなシ、これが前
記平坦な面上に動かないように固定されてお塾、咳リテ
ーナ上に載置され九ウェハをリテーナを介して平坦な面
上に真空吸着されることを特徴とするリテーナ式つエノ
・チャック。 ２、 エツチングにより製作されたリテーナを使用する
ことを特徴とする特許請求の範囲、第１項記載のリテー
ナ式つエノ１チャック。 ３、 リテーナに鋼球を固定し、外周部を鋼球と等厚の
りンダで囲んだことを特徴とする特許請求の範囲第１項
記載のリテーナ式つエノ〜チャック。 ４、 ウェハチャック面が真の平坦面でない場合、リテ
ーナＯＦＩ＃さを調節してチャックするリテーナの表面
を真の平坦面に近づけることを特徴とする特許請求−の
範囲第１項記載のリテーナ式ウェー・チャック。[Claims] 1. A retainer is placed on the vacuum chuck surface with a round hole, the outer periphery of the retainer is closed in a ring shape, and the inside of the ring has holes penetrating vertically and a ring. The ring is made of a convex part of equal thickness and a concave part that is thinner than the ring, which is fixed so as not to move on the flat surface, and is placed on the retainer and the nine wafers are flattened through the retainer. A retainer-type chuck that is vacuum-adsorbed onto a flat surface. 2. The retainer type chuck according to claim 1, which uses a retainer manufactured by etching. 3. The retainer type chuck according to claim 1, characterized in that steel balls are fixed to the retainer, and the outer periphery is surrounded by a cylinder having the same thickness as the steel balls. 4. The retainer type according to claim 1, characterized in that when the wafer chuck surface is not a true flat surface, the retainer OFI# is adjusted to bring the surface of the retainer to be chucked close to a true flat surface. Way chuck.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3375982A JPS58153344A (en) | 1982-03-05 | 1982-03-05 | Retainer type wafer chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3375982A JPS58153344A (en) | 1982-03-05 | 1982-03-05 | Retainer type wafer chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58153344A true JPS58153344A (en) | 1983-09-12 |
| JPH0361340B2 JPH0361340B2 (en) | 1991-09-19 |
Family
ID=12395355
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3375982A Granted JPS58153344A (en) | 1982-03-05 | 1982-03-05 | Retainer type wafer chuck |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58153344A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021138974A1 (en) * | 2020-01-09 | 2021-07-15 | 诚瑞光学(常州)股份有限公司 | Glass wafer suction device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54120585A (en) * | 1978-01-23 | 1979-09-19 | Western Electric Co | Method of placing and smoothing substrate wafer having front and rear surfaces |
| JPS56162642U (en) * | 1980-05-02 | 1981-12-03 |
-
1982
- 1982-03-05 JP JP3375982A patent/JPS58153344A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54120585A (en) * | 1978-01-23 | 1979-09-19 | Western Electric Co | Method of placing and smoothing substrate wafer having front and rear surfaces |
| JPS56162642U (en) * | 1980-05-02 | 1981-12-03 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021138974A1 (en) * | 2020-01-09 | 2021-07-15 | 诚瑞光学(常州)股份有限公司 | Glass wafer suction device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0361340B2 (en) | 1991-09-19 |
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