JPS5814393A - Magnetic bubble memory device - Google Patents
Magnetic bubble memory deviceInfo
- Publication number
- JPS5814393A JPS5814393A JP56111899A JP11189981A JPS5814393A JP S5814393 A JPS5814393 A JP S5814393A JP 56111899 A JP56111899 A JP 56111899A JP 11189981 A JP11189981 A JP 11189981A JP S5814393 A JPS5814393 A JP S5814393A
- Authority
- JP
- Japan
- Prior art keywords
- bubble memory
- voltage
- driver circuit
- circuit
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0875—Organisation of a plurality of magnetic shift registers
Abstract
Description
【発明の詳細な説明】
本発明社磁気パブルメ借り装置に係り、特にバブルメモ
リパッケージの使用温度範囲を広げる方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetic bubble memory device, and particularly to a method for expanding the operating temperature range of a bubble memory package.
この種装置のシステム構成線通常第１図に示す如く、図
示せぬバブルメモリチップとバイアス磁石および回転磁
界発生用のＸ、Ｙ駆動コイルを少なくとも債えたバブル
メモリパッケージ１と、諌パッケージ１を制御するため
のコイルドライバ回路２とジェネレータゲートドライバ
回路３やスワップゲートドライバ回路４やレプリケータ
ゲーシドツイバ回路５等からなるファンクシ璽ンドライ
バ回路とセンス回路６を含むリニア系回路と、該リニア
系回路全制御するコントーー２７とを備えた構成になり
でいる。そして、該リニア系回路は全て電源回路８に接
続しており、コイルドライバ回路２の場合は、それがコ
ントローラ７によシ起動されるとパッケージ１内ＯＸ、
Ｙ駆動コイルに対し電源回路８よ）電流供給させる制御
を行ない、この結果所定周波数の回転駆動磁界がパズル
メモリチップに与えられる。またパズルメモリチップは
周知の如くバブルを保持する磁性薄膜上にパズル制御用
の導体パターン、とバブル転、送用のパーマロイパター
ンが形成されており、導体パターンによってパズルを発
生させるジェネレータゲート中バブルを入れ替えゐスワ
ップゲートやバブルｔ−分割させるレプリケータ、ゲー
ト等の各種ゲートが形成されている。従って、ファンク
シ曹ンド２イパ回路がラントローラ７によ〉起動された
場合にはジェネレータゲートドライバ回路３はジェネレ
−タゲートに対し、又スワップゲートドツィパ回路４社
スワＶプゲートに対し、且つレプリケータゲートドライ
バ回路Ｓはレプリケータゲートに対し夫々電源回路８よ
〉電流供給させゐ制御を行ない、この結果バブルの発生
１分割、入れ替えが行なわれる。センス回路６はパズル
メモリチップのディテタタゲートよ〕のパズル検出電圧
と電源回路８０電圧とを比較して、バブルの有無情報を
；ント讐−ラγに与える。As shown in FIG. 1, the system configuration of this type of device usually controls a bubble memory package 1, which has at least a bubble memory chip (not shown), a bias magnet, and X and Y drive coils for generating a rotating magnetic field, and a cylindrical package 1. A linear circuit including a sense circuit 6 and a function driver circuit including a coil driver circuit 2, a generator gate driver circuit 3, a swap gate driver circuit 4, a replicator gate driver circuit 5, etc. The configuration includes a controller 27 that controls the entire system. All of the linear circuits are connected to the power supply circuit 8, and in the case of the coil driver circuit 2, when it is activated by the controller 7, the OX in the package 1,
Control is performed to supply current (by the power supply circuit 8) to the Y drive coil, and as a result, a rotational drive magnetic field of a predetermined frequency is applied to the puzzle memory chip. In addition, as is well known, the puzzle memory chip has a conductor pattern for puzzle control and a permalloy pattern for bubble transfer and transmission formed on a magnetic thin film that holds bubbles, and the conductor pattern holds bubbles in the generator gate that generates puzzles. Various gates such as a swap gate, a bubble T-splitting replicator, and a gate are formed. Therefore, when the funxy driver circuit 2 is activated by the run roller 7, the generator gate driver circuit 3 is connected to the generator gate, the swap gate driver circuit 4 swap gate, and the replicator driver circuit 3 to the generator gate. The gate driver circuit S controls the power supply circuit 8 to supply current to each of the replicator gates, and as a result, bubbles are generated, divided, and replaced. The sense circuit 6 compares the puzzle detection voltage of the detector gate of the puzzle memory chip with the voltage of the power supply circuit 80, and provides information on the presence or absence of a bubble to the enemy controller γ.
ところで、バブルメモリチップの各ゲートの温度依存Ｉ
ｋ祉＃ｌ１２１ａ（２）、＠、（０のよう表彰をしてぃ
ゐのが着通である。すなわち、ジェネレータゲートとレ
プリケータグー）田１０に実線で示す如く、温度と電流
値の関係が、温度が高い時は最低電流値が下が〉、且つ
温度が低い時は最低電流値が上−り、動作マージン幅が
増幅する。これに対しスワップゲートに関しては俤）Ｋ
実線で示す如く、温度が下がるに従って最高電流値が下
が〉、動作！−、ジン幅が狭くなる。このようにスワッ
プグー）Ｏｍｉｍｌ依存性は他のゲートと傾向が異なる
ため、このｔｔでは他のゲートと同じ方向に温度補正す
ることができない。By the way, the temperature dependence I of each gate of the bubble memory chip
k welfare #l121a (2), @, (The one with the award like 0 is the arrival. In other words, the generator gate and the replicator) As shown by the solid line in field 10, the relationship between temperature and current value is When the temperature is high, the minimum current value decreases, and when the temperature is low, the minimum current value increases, and the operating margin width is amplified. On the other hand, regarding swap gates, 俤)K
As shown by the solid line, the maximum current value decreases as the temperature decreases, and it works! -, the width becomes narrower. In this way, since the Omiml dependence (swap goo) has a different tendency from that of other gates, temperature correction cannot be made in the same direction as the other gates in this tt.
従来の磁気パズルメモリ装置においては、バブルメモリ
パッケージの使用温度範囲を広げる手段として第１図に
示す如く、パッケージ１内に設は要因示せぬ熱電対等の
温度−電気変換素子によ）℃
パッケージ１内の温度を電圧に変換し、これを増幅器（
ＡＭＰ）９にて増幅してコン）ａ−ツ償奇を生成し、該
コントロール信号にて７アンクシ冒ンドツイパ回路の各
々のドライバ回路もしくは一部のドライバ回路とセンス
回路に対し電流ｌ１ｌＩＯ電流補正を行なっていた。こ
の従来手段では各回路の部品点数が増すという欠点があ
り、実際にはジェネレータゲートドライバ回路３とセン
ス回路６の電流補正が行なわれているにすぎなかりた。In the conventional magnetic puzzle memory device, as a means of expanding the operating temperature range of the bubble memory package, as shown in FIG. Converts the temperature inside to voltage, which is then passed through an amplifier (
AMP) 9 to generate a control signal, and the control signal is used to correct the current l1lIO current for each driver circuit or a part of the driver circuit and sense circuit of the seven anxy amplifier circuit. I was doing it. This conventional means has the disadvantage that the number of components in each circuit increases, and in reality, only the current correction of the generator gate driver circuit 3 and the sense circuit 6 is performed.
ｔた、スフツブゲートについては、上限の温度特性の傾
向が他のものと逆であシ、他のゲートと開方
、。However, for the soft gate, the tendency of the upper limit temperature characteristics is opposite to that of other gates, and the opening speed is different from that of other gates.
,.
向に補正することができなかりた。It was not possible to make corrections in that direction.
本発明は、−このような従来の問題点を解決するもので
、第３図と第４図によ〉本発明の一実施例を説明する。The present invention is intended to solve these conventional problems, and an embodiment of the present invention will be described with reference to FIGS. 3 and 4.
先ず、第２図（２）のスフツブゲートの温ｌｌｌ！轡性
図を参照されたい。諌図（至）においで、点線はｘ、Ｙ
駆動＝、イルへの駆動電流を増し駆動磁界を強めた鳩舎
Ｏスワシプ電流一温度特性であ〉、スフツブゲートは駆
動磁界が強すると低温での動作マージンが広がることが
理解される。また、この際他のジ凰ネレータゲー）とレ
プリケータゲートについては、第３図（２）、Ｏに点Ｉ
Ｉ″ｅ示す如く駆動磁界が強くなっても電流一温度特性
はほとんど変化しないＯ
次に第３図（２）であるが、これはＸ、Ｙ駆動コイルへ
Ｏ駆動電流−温ｌｌ！特性であって、駆動電流は１１度
が上昇するに従りて減少する特性ｔもっており、この曽
条スワｔプゲートの電流一温度特性は′駆動電流（駆動
磁界）の強さを変えてやあと第３図（６）の如く温度に
対する傾向が低温になるにつれて上下限共に増加する特
性となり、ジ菖ネレータゲート中レプリケートゲートお
よび図示せぬデイテタタゲートＯ電流一温度特性と一致
する。First of all, the temperature of the smooth gate in Figure 2 (2)! Please refer to the diagram. In the diagram (to), the dotted lines are x, Y
Drive = pigeonhole O swap current vs. temperature characteristic where the drive current to the coil is increased and the drive magnetic field is strengthened.It is understood that the stronger the drive magnetic field, the wider the operation margin at low temperatures for the soft gate. At this time, for other digital generator games) and replicator gates, please refer to Figure 3 (2), point I at O.
As shown in I''e, even if the driving magnetic field becomes stronger, the current-temperature characteristic hardly changes.Next, as shown in Figure 3 (2), this is the driving current-temperature characteristic for the X and Y drive coils. Therefore, the drive current has the characteristic that it decreases as the temperature rises, and the current-temperature characteristic of this Soga swap gate is '11. As shown in FIG. 3 (6), the tendency with respect to temperature is such that both the upper and lower limits increase as the temperature decreases, which coincides with the O current-temperature characteristic of the replicate gate in the generator gate and the data gate (not shown).
これらのことを総合的に見ると、駆動磁界を同時に温度
補正することによ〉、低温側で線電流を増し、高温側で
は電流を滅せば使用温度範囲が広がることがわかる。If we look at these things comprehensively, we can see that by simultaneously temperature-correcting the driving magnetic field, we can increase the line current on the low temperature side and eliminate the current on the high temperature side, thereby expanding the usable temperature range.
第４図は上記のことを考慮した本発明に係る磁気パプル
メ篭り装置の例である。本実施例のシステム構成紘第１
図の従来例と比較すれば明らかな如く、増幅器９よりの
コン）１＝−ル信号が電源回路８の電源電圧を制御して
いる点でそれと異なりている。すなわち、パズルメモリ
パッケージ１０温度を電圧に変換し増幅した増幅器９よ
シのコントロール信号で電源回路８に与えられる外部か
らの電圧を；ントｐ−ルし、適正な電圧に変換する。FIG. 4 shows an example of a magnetic paplumme cage device according to the present invention, which takes the above into consideration. System configuration of this example Hiro 1
As is clear from the comparison with the conventional example shown in the figure, the difference is that the control signal from the amplifier 9 controls the power supply voltage of the power supply circuit 8. That is, the voltage applied from the outside to the power supply circuit 8 is controlled by the control signal of the amplifier 9 which converts and amplifies the temperature of the puzzle memory package 10 into a voltage, and converts it into an appropriate voltage.
この電圧をリニア系回路の各々の回路２，３゜４．５．
６に供給することによ少電流の増減による補正が行なわ
れる。この時、駆動磁界−同時に補正され為ことは明ら
かであシ、これによりバブルメモリチップの各ゲートの
動作マージンが広がル、バブルメモリチップ１の使用温
度範囲を広げることができる。This voltage is applied to each of the linear circuits 2, 3, 4, 5.
By supplying the current to 6, corrections are made due to increases and decreases in the low current. At this time, it is clear that the driving magnetic field is corrected at the same time, thereby widening the operating margin of each gate of the bubble memory chip and widening the operating temperature range of the bubble memory chip 1.
尚、第４図実施例において、電源回路を外部におＩ−ン
）−一ル信号を外部に出してもよい。また、この実施例
ではパッケージ内温度を検出したが、バックーシ周囲環
境温度を検出して補正叡りなりてもよいこと社言う壜で
もない。Incidentally, in the embodiment of FIG. 4, the power supply circuit may be connected to the outside and the I-1 signal may be outputted to the outside. Further, in this embodiment, the temperature inside the package is detected, but it is not necessarily the case that the temperature around the back cover can be detected and corrected.
以上の本発明によれば、回路の部品数をほとんど増すこ
となしに使用温度範囲の広い磁気パプルメ４ｖ＃＆置を
提供することができ、その実用上の効果は大である。According to the present invention as described above, it is possible to provide a magnetic paplume 4V#& which can be used over a wide temperature range without substantially increasing the number of circuit components, and its practical effects are great.
第１図は従来の磁気バブルメモリ装置のシステム構成図
、第２図（２）、＠、（Ｑはバブルメモリチップの各ゲ
ーＦの電流一温度特性図、第３図も電流−温ｆ４Ｉ性図
で（２）が駆動電流一温度特性図、（２）がスワｔプゲ
ー）の温度補正された状態の電流一温度特性図、第４図
は本発明に係る磁気バブルメ毫す装置のシステム構成図
である。
〔符号の説明〕
１−一・バブルメモリパッケージ
２．３，４．５・・・−・ドライバ回路６−・・・・セ
ンス回路
７・・・−ラントローラ
８・・・・・・電源回路
９・・・−・増幅器Figure 1 is a system configuration diagram of a conventional magnetic bubble memory device, Figure 2 (2), @, (Q is a current-temperature characteristic diagram for each game F of the bubble memory chip, and Figure 3 is also a current-temperature characteristic diagram. In the figure, (2) is a drive current-temperature characteristic diagram, (2) is a current-temperature characteristic diagram in a temperature-corrected state (swap game), and FIG. 4 is a system configuration of the magnetic bubble printing device according to the present invention. It is a diagram. [Explanation of symbols] 1-1 Bubble memory package 2.3, 4.5...-Driver circuit 6--Sense circuit 7--Run roller 8...Power supply circuit 9...--Amplifier
Claims (1)
値によシコイルドライバ回路とファンクシーンドライバ
回路およびセンス回路からなるリニア系回路に供給され
る電源電圧を変え、バブルメモリパッケージの使用温度
範囲を広げるようにしたことを特徴とする磁気バブルメ
モリ装置。Detects the temperature of the bubble memory package and changes the power supply voltage supplied to the linear circuit consisting of the coil driver circuit, funk scene driver circuit, and sense circuit according to the value of Il&, thereby expanding the operating temperature range of the bubble memory package. A magnetic bubble memory device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56111899A JPS5814393A (en) | 1981-07-17 | 1981-07-17 | Magnetic bubble memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56111899A JPS5814393A (en) | 1981-07-17 | 1981-07-17 | Magnetic bubble memory device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5814393A true JPS5814393A (en) | 1983-01-27 |
Family
ID=14572915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56111899A Pending JPS5814393A (en) | 1981-07-17 | 1981-07-17 | Magnetic bubble memory device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5814393A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59118200U (en) * | 1983-01-31 | 1984-08-09 | 富士通株式会社 | bubble memory device |
| JPS60157797A (en) * | 1983-12-23 | 1985-08-19 | ゼネラル モ−タ−ズ コ−ポレ−シヨン | Temperature compensation type bubble memory system |
| JPS6296371A (en) * | 1985-10-21 | 1987-05-02 | 品川白煉瓦株式会社 | Spraying material for repairing blast furnace |
| JPS62235240A (en) * | 1986-04-02 | 1987-10-15 | 関西ペイント株式会社 | Manufacture of phosphate bonded composition of copper slag |
-
1981
- 1981-07-17 JP JP56111899A patent/JPS5814393A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59118200U (en) * | 1983-01-31 | 1984-08-09 | 富士通株式会社 | bubble memory device |
| JPS6319999Y2 (en) * | 1983-01-31 | 1988-06-03 | ||
| JPS60157797A (en) * | 1983-12-23 | 1985-08-19 | ゼネラル モ−タ−ズ コ−ポレ−シヨン | Temperature compensation type bubble memory system |
| JPS6222198B2 (en) * | 1983-12-23 | 1987-05-16 | Gen Motors Corp | |
| JPS6296371A (en) * | 1985-10-21 | 1987-05-02 | 品川白煉瓦株式会社 | Spraying material for repairing blast furnace |
| JPH0227309B2 (en) * | 1985-10-21 | 1990-06-15 | Shinagawa Refractories Co | |
| JPS62235240A (en) * | 1986-04-02 | 1987-10-15 | 関西ペイント株式会社 | Manufacture of phosphate bonded composition of copper slag |
| JPH0240012B2 (en) * | 1986-04-02 | 1990-09-10 | Kansai Peinto Kk |
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