JPS58137225A - Substrate loading/unloading mechanism - Google Patents
Substrate loading/unloading mechanismInfo
- Publication number
- JPS58137225A JPS58137225A JP1949782A JP1949782A JPS58137225A JP S58137225 A JPS58137225 A JP S58137225A JP 1949782 A JP1949782 A JP 1949782A JP 1949782 A JP1949782 A JP 1949782A JP S58137225 A JPS58137225 A JP S58137225A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- gas
- substrate holder
- wafer
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Abstract
Description
【発明の詳細な説明】
この発明は、真空容器内における基板の加熱冷却の際に
用いる基板着脱機構に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a substrate attachment/detachment mechanism used for heating and cooling a substrate in a vacuum container.
従来、複数枚の基板、例えばウェハーをセットした基板
支持体を自動的に冷却及び加熱基板ホルダーに着脱する
機構において、基板ホルダーの上に基板支持体をのせる
方式では基板支持体の重量（通常１〜２ＩｃｆＩ）Ｋよ
る接触だけなので、基板ホルダーを冷却又は加熱した時
基板支持体の精密温度制御はほとんど不可能であった。Conventionally, in a mechanism that automatically attaches and detaches a substrate support on which multiple substrates, such as wafers, are set, to and from a cooling and heating substrate holder, the weight of the substrate support (usually Since the contact was only at 1-2 IcfI)K, precise temperature control of the substrate support was almost impossible when the substrate holder was cooled or heated.
又基板ホルダーが下向ｌＩＫあシ、つめと機械的な力、
例えばバネの反発力を利用して基板支持体〜１００穆程
度が限界であシ、この場合例えば基板ホルダー８７０℃
に加熱した時、室温（２５℃）から１時間しても温度上
昇が１０℃〜３０℃であｐ充分な制御性が得られていな
かった。これは基板支持体と基板ホルダーの双方の表面
が触れていても微視的にみえ場鳥面〆面とが完全に接触
していない丸めである。充分平滑な精度で仕上げられた
表面をもつ２枚の板を向いあわせて押しつけたとき通常
複数の極めて微細な面積で接触している通常２枚の板の
極めて狭い空間は空気の層が占めてお９熱伝達はガス分
子を介して行われている。In addition, when the board holder is facing downward, the legs, claws and mechanical force,
For example, using the repulsive force of a spring, the limit is about 100 degrees Celsius for the substrate support.
When heated to 100°C, the temperature increased by 10°C to 30°C even after 1 hour from room temperature (25°C), and sufficient controllability of p was not obtained. This is a rounded shape in which the surfaces of both the substrate support and the substrate holder are in contact, but the microscopically visible surface is not in complete contact with the final surface. When two plates with sufficiently smooth and precisely finished surfaces are pressed against each other, a layer of air occupies the extremely narrow space between the two plates, which are usually in contact at multiple extremely small areas. 9. Heat transfer takes place via gas molecules.
しかし真空装置内部ではガス分子の密度が非常に低いた
めにガス分子による熱伝達も殆んど期待できない。そし
て通常の真空装置内での２つの噛れた系の熱伝達は輻射
によりて行われることになる。However, since the density of gas molecules inside the vacuum device is extremely low, almost no heat transfer by gas molecules can be expected. Heat transfer between the two interlocking systems in a normal vacuum apparatus is performed by radiation.
しかし輻射による熱伝達はガス分子の対流及び熱伝導と
比較して効率が悪く特に精密な温度制御は困峻である。However, heat transfer by radiation is less efficient than convection and heat conduction of gas molecules, making precise temperature control particularly difficult.
本発明の目的は、上記の従来の欠点を改善し、温度制御
を精密に行ないうる基板着脱機構を提供することである
。SUMMARY OF THE INVENTION An object of the present invention is to improve the above-mentioned conventional drawbacks and provide a substrate attachment/detachment mechanism that can accurately control temperature.
本発明は、２枚の面と面とが接触する板の間の熱伝導に
よる熱伝達の効率をあげることにより真空内における高
精度な温度制御を行なうために基板支持体と基板ホルダ
ーの間に気体、液体あるいは固体の熱伝達媒体を介在さ
せることを特徴とするＯ
以下図面に基づいてこの発明を説明する。The present invention provides for highly accurate temperature control in a vacuum by increasing the efficiency of heat transfer by heat conduction between two plates in contact with each other. The present invention will be described below with reference to the drawings.
第１図は、従来の着脱構造の例を示す断面図である。基
板支持体搬送用台座８に乗ってきた基板支持体３が定位
蓋に止ると、冷却及び加熱基板ホルダー１が１．ａの位
置まで下シ基板支持体着税用つめ２が２ｍの位置から２
ｂの位置に回転して基板支持体を装着する。次に基板ホ
ルダー１は再び上昇し、もとの位置に止る。この時基板
支持体３は基板ホルダーＩＫ基板支持体に取付けられた
バネ４０反発力によシ約１０＃〜１００＃の力で押しつ
けられる。第４図にその時の温ｆ特性のデータを示す。FIG. 1 is a sectional view showing an example of a conventional attachment/detachment structure. When the substrate support 3 that has been placed on the substrate support transfer pedestal 8 stops on the stereotactic lid, the cooling and heating substrate holder 1 is moved to 1. Lower the substrate support to position a from position 2 of 2m.
Rotate to position b and attach the substrate support. Next, the substrate holder 1 rises again and remains at the original position. At this time, the substrate support 3 is pressed with a force of about 10# to 100# by the repulsive force of the spring 40 attached to the substrate holder IK substrate support. Figure 4 shows data on the temperature f characteristics at that time.
例えば基板ホルダーが６０℃に加熱されている時基板支
持体の温度は接触した後１時間しても室温２７℃から１
０℃〜３０℃しか上昇しない。For example, when the substrate holder is heated to 60°C, the temperature of the substrate support remains 1 hour after contact with the room temperature of 27°C.
The temperature rises only from 0°C to 30°C.
第２図は、この発明の第１の実施例で基板支持体と基板
ホルダーの間に気体を介在させることにより熱伝達効率
をあげる例である。基板ホルダー１′に真空室外から導
ｆ１２を通して気体を基板ホルダー１′と基板支持体３
０間の空間１ｏに真空度α１〜７（３ＱＴｏｒｒの範囲
で導入する。なお、空間１０は０リング９によプ真空シ
ールされている。この時（ｆｆ６０Ｔｏｒｒの場合）冷
却及び加熱基板ホルダー１′の温度を６０℃にすると第
５図に示すように接触後約１０分で基板支持体の温度が
ｇｏ’ｏｔで上昇した。従って、基板ホルダーと基板支
持体の温度差はほとんどなくなり、良好な熱接触を得ら
れたことになる。FIG. 2 is an example of increasing the heat transfer efficiency by interposing gas between the substrate support and the substrate holder in the first embodiment of the present invention. Gas is introduced into the substrate holder 1' from outside the vacuum chamber through the conductor F12 and the substrate holder 1' and the substrate support 3.
A vacuum level α1 to α7 (3Q Torr) is introduced into the space 1o between 0 and 0. The space 10 is vacuum-sealed by an 0 ring 9. At this time (in the case of ff60Torr), the cooling and heating substrate holder 1' When the temperature of the substrate holder was set to 60°C, the temperature of the substrate support rose rapidly in about 10 minutes after contact, as shown in Figure 5.Therefore, the temperature difference between the substrate holder and the substrate support almost disappeared, and a good condition was achieved. This means that thermal contact has been achieved.
導入ガスの種類と圧力をか木て実験を行なったところ熱
伝達の効率はガスの種類によって若干異るが、むしろ圧
力によって非常に大きな影響を受け１０−”Ｔｏｒｒ以
下の圧力では殆んど効果がないことがわかった。実用的
には０．１Ｔｏｒｒ以上７６０Ｔａｒｔ以下が望ましい
。上記実施例では気体の場合を述べたが液体を用いても
よい。Experiments were conducted by varying the type and pressure of introduced gas and found that the efficiency of heat transfer differs slightly depending on the type of gas, but it is rather greatly influenced by pressure, with almost no effect at pressures below 10-"Torr. It was found that there was no difference.Practically speaking, it is desirable that the pressure be 0.1 Torr or more and 760 Tart or less.In the above embodiments, the case of gas was described, but liquid may also be used.
第３図はこの発明の第２の実施例で基板支持体と基板ホ
ルダーの間に固体を介在させることにより熱伝達の効率
をあげた例である。厚さα５ｗｓ程１１ｎシート１１ｔ
−基板支持体３と基板ホルダー１０間に装置させた場合
％第６図に示すように３５分後に基板ホルダーの温度と
等しくなった。FIG. 3 shows a second embodiment of the present invention in which a solid body is interposed between the substrate support and the substrate holder to improve heat transfer efficiency. Thickness α5ws 11n sheet 11t
- When the device is installed between the substrate support 3 and the substrate holder 10, the temperature becomes equal to that of the substrate holder after 35 minutes as shown in FIG.
基板ホルダーと基板支持体の間に介在させる固体の材料
及び形状の影響について調査したところ次のような仁と
が明らかになった。基板ホルダーと基板支持体の２枚の
板にはシート状の固体を挿入するのが最も簡便である。An investigation into the influence of the material and shape of the solid material interposed between the substrate holder and the substrate support revealed the following findings. It is most convenient to insert sheet-like solids into the two plates, the substrate holder and the substrate support.
シートはその両面で基板ホルダーと基板支持体にそれぞ
れ微視的にみてできるだけ広い接触面積をもつことが望
ましく、このためそれぞれの面に沿って充分に接触でき
るようシートをはさんだ状態で圧力をかけることが必要
である。また一定圧力下では柔軟な材質のシートはど接
触面積が広くなると考えられる。様々な材質のシートの
中で柔軟性をもつ金、銀、鋼。It is desirable for the sheet to have as wide a microscopic contact area as possible with the substrate holder and the substrate support on both sides, and for this reason, pressure is applied while sandwiching the sheet to ensure sufficient contact along each surface. It is necessary. It is also believed that under constant pressure, the contact area of the sheet of flexible material increases. Gold, silver, and steel are flexible among sheets of various materials.
アルｔ＝ウム、鉛＊４＊亜鉛、イ／ジウム等の金属がす
ぐれた熱伝達効率を示した。また金−鋼。Metals such as aluminum, lead*4*zinc, and i/dium showed excellent heat transfer efficiency. Also gold-steel.
銀−鋼、鉛−−−インジウム等の合金は金、銀。Silver-steel, lead--indium, etc. alloys are gold and silver.
インジウムに比較して廉価で充分な性能をもつことがわ
かった。金属及び合金以外の材料ではグラファイトをシ
ートとして使うこともできる。一方有効接触面積はシー
トの材料とシートを押しつける圧力のみならずシートの
厚みによって影響を受けることがわかり九。上記金属の
中でアル１＝ウム、鋼等比較的硬い金属の場合には、シ
ートの厚みがｌ騙以上であるとシート自身が変形しにく
くなる丸めに微視的な接触面積が狭ぐなプ熱伝達の効率
が低下してしまうことがわかった。これらの ４゜材
質のシートは０．１１以下に薄くすること及び焼きなま
しなどして軟質にすることなどで効率を向上することが
できる。他方インジウム、鉛などのシートは５４程度ま
で厚いシートを使用しても比較的良好な熱伝達効率が得
られた。第３図の実施例ではシートｘｌｔｉ連続した１
枚のもので形成されているが、実用的には基板支持体と
基板ホルダーにはさまれた全面をシートで覆うことは必
ずしも必要ではない。部分的にシートを設けることによ
りても充分効率のよい熱伝達を達成することが可能であ
る。It was found that it is cheaper and has sufficient performance compared to indium. Graphite can also be used as a sheet for materials other than metals and alloys. On the other hand, it was found that the effective contact area is affected not only by the material of the sheet and the pressure applied to the sheet, but also by the thickness of the sheet9. Among the above metals, in the case of relatively hard metals such as aluminum and steel, if the thickness of the sheet is more than 1 inch, the microscopic contact area will become narrower due to the rounding, which will make the sheet itself difficult to deform. It was found that the efficiency of heat transfer decreases. The efficiency of these 4° material sheets can be improved by making them thinner than 0.11 and by annealing them to make them softer. On the other hand, even when sheets made of indium, lead, etc. were used as thick as 54 mm, relatively good heat transfer efficiency was obtained. In the embodiment of FIG. 3, the sheet xlti consecutive 1
However, in practice, it is not necessarily necessary to cover the entire surface sandwiched between the substrate support and the substrate holder with a sheet. It is also possible to achieve sufficiently efficient heat transfer by partially providing sheets.
以上説明したように、この発明による着脱機構熱の温度
を精密に制御できるので、薄漠形成上、ウェハーの温度
制御が重要であるリフトオツ蒸溜、リフトオフスパッタ
リング、ドライエツチング等を良好に行うことができる
。As explained above, since the temperature of the heat of the attachment/detachment mechanism according to the present invention can be precisely controlled, lift-off distillation, lift-off sputtering, dry etching, etc., in which wafer temperature control is important for desert formation, can be performed satisfactorily. .
第１図は従来の例を示す断面図、第２図、第３図は本発
明の実施例の主要部分の断面図、第４〜６図は基板支持
体の温度上昇を示すグラフである。
１．１′・・・・・・基板ホルダ、２・・・・・・着脱
用つめ、３・・・・・・基板支持体、４・・・・・・バ
ネ、５・・・・・・バネ押え、６・・・・・・被処理基
板、７・・・・・ｉ′真空室、８・・・・・・搬送用台
座、９・・・・・・０リング、１０・・・・・・気体封
入用空間、１１・・・・・・固体熱接触用媒体、１２・
・・・・・気体封入用空間。
第１閉
す
第３閉
□FIG. 1 is a sectional view showing a conventional example, FIGS. 2 and 3 are sectional views of main parts of an embodiment of the present invention, and FIGS. 4 to 6 are graphs showing temperature rise of the substrate support. 1.1'...Board holder, 2...Attachment/detaching pawl, 3...Board support, 4...Spring, 5...・Spring holder, 6...Substrate to be processed, 7...i' vacuum chamber, 8...Transfer pedestal, 9...0 ring, 10... ... Space for gas enclosure, 11 ... Solid thermal contact medium, 12.
...Space for gas inclusion. 1st close 3rd close □
Claims (4)
加熱基板ホルダとを自動的に着脱する機構において、両
者の間の良好な熱接触を得る九めに前記基板支持体と冷
却及び加熱基板ホルダとの間に熱を伝達するための気体
、液体あるいは固体媒体を介在させた構造を有する基板
着脱機＊。(1) In a mechanism that automatically attaches and detaches the substrate support on which the substrate to be processed is set and the cooling and heating substrate holder, the substrate support and the cooling and heating are used to obtain good thermal contact between the two. A substrate attachment/detachment machine* that has a structure in which a gas, liquid, or solid medium is interposed to transfer heat between the substrate holder and the substrate holder.
ム、蛤、錫、亜鉛、インジウムのうちのひとつあるいは
それらの合金からなる軟らかな材料を用いた特１ｆｆ−
請求の範囲第Ｃ１）項記載の基板着脱機構。(2) A special method using a soft material consisting of one of gold, silver, copper, aluminum, clam, tin, zinc, and indium or an alloy thereof as the solid medium.
A substrate attachment/detachment mechanism according to claim C1).
いた％杵請求の範囲第１項記載の基板着脱機構。(3) The substrate attachment/detachment mechanism according to claim 1, wherein the solid medium is made of flexible graphite.
ある％許請求の範囲第（１）項記載の基板着脱機構。(4) The substrate attachment/detachment mechanism according to claim (1), wherein the pressure of the heat transfer gas is α1 to 760 To/r.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1949782A JPS58137225A (en) | 1982-02-09 | 1982-02-09 | Substrate loading/unloading mechanism |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1949782A JPS58137225A (en) | 1982-02-09 | 1982-02-09 | Substrate loading/unloading mechanism |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58137225A true JPS58137225A (en) | 1983-08-15 |
Family
ID=12001002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1949782A Pending JPS58137225A (en) | 1982-02-09 | 1982-02-09 | Substrate loading/unloading mechanism |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58137225A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6473724A (en) * | 1987-09-16 | 1989-03-20 | Hitachi Ltd | Fixation of wafer |
| JPH021951A (en) * | 1988-06-09 | 1990-01-08 | Nissin Electric Co Ltd | Cooling method for sheet material to be treated in vacuum |
| EP1002887A1 (en) * | 1998-11-20 | 2000-05-24 | Philips Patentverwaltung GmbH | Method and apparatus for producing a luminescent layer |
| WO2003088326A3 (en) * | 2002-04-05 | 2005-03-24 | Asm Inc | Method of loading a wafer onto a wafer holder to reduce thermal shock |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53106576A (en) * | 1977-02-28 | 1978-09-16 | Nec Corp | Ion etching device |
-
1982
- 1982-02-09 JP JP1949782A patent/JPS58137225A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53106576A (en) * | 1977-02-28 | 1978-09-16 | Nec Corp | Ion etching device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6473724A (en) * | 1987-09-16 | 1989-03-20 | Hitachi Ltd | Fixation of wafer |
| JPH021951A (en) * | 1988-06-09 | 1990-01-08 | Nissin Electric Co Ltd | Cooling method for sheet material to be treated in vacuum |
| JPH0682749B2 (en) * | 1988-06-09 | 1994-10-19 | 日新電機株式会社 | Cooling method of plate-like processed material in vacuum processing |
| EP1002887A1 (en) * | 1998-11-20 | 2000-05-24 | Philips Patentverwaltung GmbH | Method and apparatus for producing a luminescent layer |
| WO2003088326A3 (en) * | 2002-04-05 | 2005-03-24 | Asm Inc | Method of loading a wafer onto a wafer holder to reduce thermal shock |
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