JPS58147026A - Apparatus for film formation by glow discharge - Google Patents

Apparatus for film formation by glow discharge

Info

Publication number
JPS58147026A
JPS58147026A JP2850882A JP2850882A JPS58147026A JP S58147026 A JPS58147026 A JP S58147026A JP 2850882 A JP2850882 A JP 2850882A JP 2850882 A JP2850882 A JP 2850882A JP S58147026 A JPS58147026 A JP S58147026A
Authority
JP
Japan
Prior art keywords
sample
circumference
glow discharge
film
auxiliary tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2850882A
Other languages
Japanese (ja)
Inventor
Genichi Adachi
元一 安達
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2850882A priority Critical patent/JPS58147026A/en
Publication of JPS58147026A publication Critical patent/JPS58147026A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain a film in the uniform thickness at the external circumference of a cylindrical sample by grow discharge by providing an auxiliary tube of the same diameter as the sample being arranged in the state to be closely attached to the sample coaxially. CONSTITUTION:An auxiliary tube 7 provided at the lower end has the same outer diameter as a sample 6. The outer circumference of upper portion of such tube is cut and is inserted into the sample 6, thereby working as a fixing base. The upper end of auxiliary tube provided at the upper portion is sealed and it is also used as an upper cover of sample 6 preventing entrance of reaction gas into said sample. Moreover, it has the same outer diameter as the sample 6 and is inserted thereto through the cutting of the circumference of the lower end. Thereby, the sample 6 and auxiliary tubes 7, 8 are integrated without stepped portions and gaps. When a thin film is formed on the circumference of the sample 6 through the glow discharge by introducing the gas 3 into the reaction chamber 1, the gas flow is not disturbed and the field becomes uniform since there exist no stepped portion and gap. Accordingly, a thin film having extremely uniform thickness can be formed and abnormal thickness at both ends of the sample 6 does not exist.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明はグロー放電によって原料ガス【分解して膜形成
を行なう装置に係り、特に円筒状試料の外周面に均一な
膜形成を行なう装置に関する０ 〔発明の技術的背景とその問題点〕 従来、グロー放電により膜形成【行なう装置において錬
試料彫状が円筒形の場合、諌試料は反応室内に設置され
九支持台上に単に垂直に載１′ＪＬは固定されているだ
けのものが一般的であった。この場合、グロー放電によ
って、該試料表面に所定の薄１Ｋｋ被着しようとすると
、試料両端において、導入されたガス流の不均一や電界
の不均一【生ずるために、均一な膜厚【得ることは困難
であった。Detailed Description of the Invention [Technical Field of the Invention] The present invention relates to an apparatus for forming a film by decomposing a source gas by glow discharge, and particularly relates to an apparatus for forming a uniform film on the outer peripheral surface of a cylindrical sample. [Technical background of the invention and its problems] Conventionally, when the shape of the sample is cylindrical in the apparatus used to form a film by glow discharge, the sample is placed in a reaction chamber and simply placed vertically on a support stand. 'JL was generally only fixed. In this case, when trying to deposit a predetermined thin layer of 1Kk on the sample surface by glow discharge, the introduced gas flow and the electric field are non-uniform at both ends of the sample, so it is difficult to obtain a uniform film thickness. was difficult.

そして、所定の均一な膜が得られない場合には例えば電
子写真感光部材としてこの膜【使用した時には膜形成に
著しい不均一をもたらすという欠点があった。When a predetermined uniform film cannot be obtained, for example, when this film is used as an electrophotographic photosensitive member, there is a drawback that the film formation becomes significantly non-uniform.

〔発明の目的〕[Purpose of the invention]

本発明は、円筒状試料の外周面に対して均一な膜厚の膜
を形成させ得るグロー放電によ。る膜形成装置を提供す
ること【目的としている。The present invention uses glow discharge to form a film with a uniform thickness on the outer peripheral surface of a cylindrical sample. The purpose is to provide a film forming apparatus that

〔発明の概要〕[Summary of the invention]

本発明は、反応室内におかれる円筒状試料の両端に、こ
の試料と同一の外ａｔ有する補助管を試料と同軸に装着
して試料両端の形状的な特異性上皇かけ上除去するよう
にしたものである０この際、前記補助管は、試料本体と
の段差衾生じない１う同一〇外径であることが必要であ
り又、補助管【装着する際試料本体との間に空Ｗｔ−生
じないように密着させることが必要である。何故ならば
上述のＲ１ｉ中空隙はガス流Ｏすれや電界の不均−ｔも
几らすからである０尚、上述の補助管は、゛グ四−放電
の方式により、円筒状試料と同一〇素材であることが必
要な場合もあり、そうでない場合もある０又、補助管の
長さはりアクタナイズ等の条件が決められるべきもので
ある口 〔発明の効果〕 本発明により、円筒試料の外周面に均一な厚さｏ＊ｉ＊
を形成することが可能となつｆｔ。In the present invention, auxiliary tubes having the same outer diameter as the sample are attached to both ends of a cylindrical sample placed in a reaction chamber coaxially with the sample, so that the shape specificity of both ends of the sample can be removed. In this case, it is necessary that the auxiliary tube has the same outer diameter as the sample body so that there is no step between the auxiliary tube and the sample body. -It is necessary to ensure close contact to prevent this from occurring. This is because the above-mentioned hollow gap R1i also reduces the gas flow O and the electric field non-uniformity. (10) It may or may not be necessary to use the same material as the material (0), and the conditions such as the length of the auxiliary tube, actanization, etc. should be determined. Uniform thickness o*i* on the outer peripheral surface of
ft.

〔発明の実施例°〕[Embodiments of the invention°]

次に本発明を実施例を用いて詳細に説明する０第１Ｗは
本発明を示すグ四−放電装置の概略図、第２図はその要
部の縦断面図であるＯ反応基１には周囲に誘導コイル２
が装着され、上部に原料ガス導入口３、下部に排気口４
が設けられている。５はパルプである０反応ｉｉＪ内に
円筒状試料６がその上下両端に補助管１，８【設けた状
態で配置されゐ。下端側の補助管２は試料Ｃの固定台【
兼ねるもので、ｌ５ｚＥのように試料Ｃ′と同一外径を
有し、試料を固定するためその上部は外周【切削して試
料６内に挿入できるようになっている。上端側の補助ｙ
ｇは試料Ｃ内へのガス侵入【防止する上蓋【兼ねるよう
に上端１＊じてあり、試料６と同一外径で、その下部を
切削して試料６内に挿入されている。Next, the present invention will be explained in detail using examples. 01 W is a schematic diagram of a four-discharge device showing the present invention, and FIG. 2 is a longitudinal cross-sectional view of the main part. Induction coil 2 around
is installed, with raw material gas inlet 3 at the top and exhaust port 4 at the bottom.
is provided. 5 is pulp. A cylindrical sample 6 is placed in a reaction iiJ with auxiliary tubes 1 and 8 provided at both its upper and lower ends. The auxiliary tube 2 on the lower end side is a fixing stand for sample C [
It has the same outer diameter as sample C' like 15zE, and in order to fix the sample, its upper part can be cut from the outer periphery and inserted into sample 6. Upper end side auxiliary y
g is the upper end 1* which also serves as an upper cover to prevent gas intrusion into the sample C. It has the same outer diameter as the sample 6, and its lower part is cut and inserted into the sample 6.

具体例【挙げれば、試料６は外径８０襲、長さ２７０１
１％、厚さ２簡のＵ円筒であり、補助管Ｖ、ｔは挿入部
が２０１１１１．全体ではそれぞれ長さ１２０ｓＥＩの
Ｕ円筒である。Specific example [For example, sample 6 has an outer diameter of 80 mm and a length of 270 mm.
It is a U cylinder with a thickness of 1% and a thickness of 2.The insertion part of the auxiliary tube V, t is 201111. In total, each is a U-cylinder with a length of 120 sEI.

試料Ｃと補助管２．８は、段差なく、かつ空隙も無い状
態となっている。The sample C and the auxiliary tube 2.8 are in a state where there is no difference in level and there is no gap.

このようにし艮後、以下に述べる操作に１ってアモルフ
ァスシリコンｊ［【、試料６の外周面上に堆積させ次。After this process, amorphous silicon was deposited on the outer peripheral surface of the sample 6 using the following procedure.

□まず反応１ｉ［Ｊ内【排気してＩ　ＸＩ　Ｏ−’　Ｔ
ｏｒｒまで到達させた０この時、試料Ｃの＊面はヒータ
ー（ｌ示せず）Ｋより２５０℃まで加熱されている。次
いでガス供給系を操作してＨ！ベースのＢＩＨ４ガス及
びＢ！Ｈ，ガスを混食してガス導入凸３より反応基１内
へ導入する。そして排気系のパルプ操作により反応車内
圧力ｔ　０．５　Ｔｏｒｒ　　とする。しかる後、高周
波電力【反応皇外偶に巻かれたコイル２に印加してアス
シリコン膜を堆積させ九ところ、約２０μ犀の膜が形成
され、試料外周面での膜厚バ２ツキは１０ｎ以内であり
、−に試料両端での膜厚の異常は見出されなかつ九。□First, reaction 1i [in J [exhaust I XI O-' T
At this time, the * side of the sample C was heated to 250° C. by a heater (not shown) K. Next, operate the gas supply system to H! Base BIH4 gas and B! H and gas are mixed and introduced into the reaction group 1 through the gas introduction convex 3. Then, the pressure inside the reaction vehicle is set to t 0.5 Torr by pulp operation of the exhaust system. After that, high-frequency power was applied to the coil 2 wound around the reactor to deposit an asilicon film, and a film of about 20 μm was formed, with a film thickness variation of 10 nm on the outer circumferential surface of the sample. Within -9, no abnormality in film thickness was found at both ends of the sample.

更に１本試料【電子写真用感光ドラムとして使用し九時
、全くム２の無い電子写真儂が形成されることが確認さ
れた口In addition, one sample [a sample that was used as a photosensitive drum for electrophotography and was confirmed to form an electrophotographic image without any porosity at 9 o'clock.

【図面の簡単な説明】[Brief explanation of drawings]

ｊＩＩＷＪは本発明の実施例の装置を示す概略図、５１
１１２図はその要部を示す断面図である。 ・１：・・コ反応富、２・・・高周波誘導コイル、Ｊ・
・・ガス、導Ｊ谷口、４・・・排気口、５・・・パルプ
、６・・・円筒状試料、１．＃・・・補助管０ 出鵬人代理人　弁理士　　鈴　江　武　彦第１図 第２図jIIWJ is a schematic diagram showing an apparatus according to an embodiment of the present invention, 51
FIG. 112 is a sectional view showing the main part thereof.・1:... Co-reaction wealth, 2... High frequency induction coil, J.
...Gas, J Taniguchi, 4...Exhaust port, 5...Pulp, 6...Cylindrical sample, 1. ＃・・・Auxiliary pipe 0 Patent attorney Suzue Takehiko Figure 1 Figure 2

Claims (1)

【特許請求の範囲】 反応室内に原料ガスを導入し、これｔグロー放電により
分解させて円筒状試料の外周面に膜を形成する装置にお
いて、前記試料の両端に、試料と同一外径を有する補助
管【試料と同軸に、かつ試料に密着させて配置するよう
にし危とと【特徴とＴ石グロー放電による膜形成装置０[Scope of Claims] An apparatus for introducing a raw material gas into a reaction chamber and decomposing it by glow discharge to form a film on the outer peripheral surface of a cylindrical sample, wherein both ends of the sample have the same outer diameter as the sample. Auxiliary tube [It should be placed coaxially with the sample and in close contact with the sample.[Characteristics and T-stone film forming device using glow discharge]
JP2850882A 1982-02-24 1982-02-24 Apparatus for film formation by glow discharge Pending JPS58147026A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2850882A JPS58147026A (en) 1982-02-24 1982-02-24 Apparatus for film formation by glow discharge

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2850882A JPS58147026A (en) 1982-02-24 1982-02-24 Apparatus for film formation by glow discharge

Publications (1)

Publication Number Publication Date
JPS58147026A true JPS58147026A (en) 1983-09-01

Family

ID=12250619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2850882A Pending JPS58147026A (en) 1982-02-24 1982-02-24 Apparatus for film formation by glow discharge

Country Status (1)

Country Link
JP (1) JPS58147026A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4821858A (en) * 1986-07-10 1989-04-18 Kabushiki Kaisha Daikin Seisakusho Release mechanism for a clutch

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118111A (en) * 1982-01-07 1983-07-14 Ulvac Corp Plasma cvd apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118111A (en) * 1982-01-07 1983-07-14 Ulvac Corp Plasma cvd apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4821858A (en) * 1986-07-10 1989-04-18 Kabushiki Kaisha Daikin Seisakusho Release mechanism for a clutch

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