JPH065522A - High frequency plasma cvd device - Google Patents
High frequency plasma cvd deviceInfo
- Publication number
- JPH065522A JPH065522A JP15830792A JP15830792A JPH065522A JP H065522 A JPH065522 A JP H065522A JP 15830792 A JP15830792 A JP 15830792A JP 15830792 A JP15830792 A JP 15830792A JP H065522 A JPH065522 A JP H065522A
- Authority
- JP
- Japan
- Prior art keywords
- cathode electrode
- high frequency
- plasma cvd
- reaction gas
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はａ−Ｓｉ薄膜、ＳｉＮx
（窒化シリコン）薄膜などの半導体膜や絶縁膜などを形
成する化学蒸着（Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ Ｄｅ
ｐｏｓｉｔｉｏｎ、以下ＣＶＤという）型薄膜形成に用
いられる高周波プラズマＣＶＤ装置に関する。The present invention relates to an a-Si thin film, SiN x.
Chemical Vapor Deposition for forming semiconductor films such as (silicon nitride) thin films and insulating films
position, hereinafter referred to as CVD) type high frequency plasma CVD apparatus used for forming a thin film.
【０００２】[0002]
【従来の技術】図６は従来の平行平板型高周波（ＲＦ）
プラズマＣＶＤ装置を示す概略構成図である。反応容器
１６内には、カソード電極１１、カソード電極１１と対
向する位置にアノード電極１２、カソード電極１１のア
ノード電極１２と対向しない部分にアースシールド１３
が配置されている。カソード電極１１は中空になってお
り、アノード電極１２に対向した部分に直径０．１〜
０．５ｍｍ程度の多数の穴１７が設けられている。カソ
ード電極１１にはガス供給管１５が接続されている。ま
た、アノード電極１２上に基板１４が設置される。2. Description of the Related Art FIG. 6 shows a conventional parallel plate type high frequency (RF).
It is a schematic block diagram which shows a plasma CVD apparatus. In the reaction vessel 16, a cathode electrode 11, an anode electrode 12 at a position facing the cathode electrode 11, and a ground shield 13 at a portion of the cathode electrode 11 not facing the anode electrode 12.
Are arranged. The cathode electrode 11 is hollow and has a diameter of 0.1 to 0.1 at the portion facing the anode electrode 12.
A large number of holes 17 of about 0.5 mm are provided. A gas supply pipe 15 is connected to the cathode electrode 11. Further, the substrate 14 is placed on the anode electrode 12.
【０００３】この装置により例えばアモルファスシリコ
ン薄膜（以下ａ−Ｓｉ薄膜という）を形成する場合につ
いて説明する。反応容器１６内は真空ポンプ（図示省
略）により薄膜形成に必要な所定の真空度に真空引きさ
れる。ＳｉＨ4 などの反応ガスはガス供給管１５よりカ
ソード電極１１の中空部に供給され、アノード電極１２
側に設けられた微小な穴１７よりシャワー状に放出さ
れ、アノード電極１２上に設置された基板１４の表面に
均一に供給される。通常、この方式はシャワー方式と呼
ばれ、大面積の基板表面にも均一にガスを供給できると
いう特徴をもっている。高周波電源（図示省略）より１
３．５６ＭＨｚの高周波電力がインピーダンス整合器
（図示省略）を介してカソード電極１１に供給される。
カソード電極１１のアノード電極１２と対向しない部分
はアースシールド１３で囲われているので、この部分で
はプラズマは発生しない。つまり、前述の高周波電力に
より、カソード電極１１とアノード電極１２との間でグ
ロー放電プラズマが発生する。カソード電極１１の穴１
７よりシャワー状に供給される反応ガス（ＳｉＨ4 ）は
プラズマにより解離され、基板１４表面にａ−Ｓｉ薄膜
が堆積する。A case where an amorphous silicon thin film (hereinafter referred to as an a-Si thin film) is formed by this apparatus will be described. The inside of the reaction vessel 16 is evacuated by a vacuum pump (not shown) to a predetermined degree of vacuum required for thin film formation. The reaction gas such as SiH 4 is supplied from the gas supply pipe 15 to the hollow portion of the cathode electrode 11,
It is emitted in the shape of a shower from the minute holes 17 provided on the side, and is uniformly supplied to the surface of the substrate 14 placed on the anode electrode 12. Usually, this method is called a shower method and has a feature that gas can be uniformly supplied to the surface of a large-area substrate. 1 from a high frequency power source (not shown)
High frequency power of 3.56 MHz is supplied to the cathode electrode 11 via an impedance matching device (not shown).
Since the portion of the cathode electrode 11 that does not face the anode electrode 12 is surrounded by the earth shield 13, plasma is not generated in this portion. That is, glow discharge plasma is generated between the cathode electrode 11 and the anode electrode 12 by the high frequency power described above. Hole 1 for cathode electrode 11
The reaction gas (SiH 4 ) supplied in a shower form from 7 is dissociated by plasma, and an a-Si thin film is deposited on the surface of the substrate 14.
【０００４】[0004]
【発明が解決しようとする課題】従来の装置では、基板
の大きさが５００ｍｍ×５００ｍｍ以上の場合には、次
のような問題が生じる。In the conventional apparatus, the following problems occur when the size of the substrate is 500 mm × 500 mm or more.
【０００５】カソード電極とアノード電極との間隔およ
び反応容器内のガス圧力などに依存するが、図７および
図８に示すように電極間の中央部または周辺部に偏って
プラズマが発生する。その結果、図９および図１０に示
すように、基板に堆積されるアモルファスシリコンなど
の膜厚は、基板中央部で厚くなったり、逆に基板周辺部
で厚くなったりする。このような現象は、基板の大きさ
が５００ｍｍ×５００ｍｍ以上になると顕著に現れる
が、基板の全面にわたって膜厚分布を一様にすることは
実際上極めて困難である。したがって、従来の装置は、
大面積基板を対象とする場合は実用性に欠けていた。こ
れらの問題の原因としては、電力密度の不均一、および
反応ガスの流量や流速の不均一などが考えられる。Although depending on the distance between the cathode electrode and the anode electrode and the gas pressure in the reaction vessel, plasma is eccentrically generated in the central portion or the peripheral portion between the electrodes as shown in FIGS. 7 and 8. As a result, as shown in FIGS. 9 and 10, the film thickness of the amorphous silicon or the like deposited on the substrate becomes thicker in the central portion of the substrate and, conversely, thicker in the peripheral portion of the substrate. Such a phenomenon appears remarkably when the size of the substrate is 500 mm × 500 mm or more, but it is actually extremely difficult to make the film thickness distribution uniform over the entire surface of the substrate. Therefore, the conventional device is
When it was applied to a large area substrate, it was not practical. Possible causes of these problems are uneven power density, uneven flow rate and flow velocity of the reaction gas, and the like.
【０００６】本発明は前記問題点を解決するためになさ
れたものであり、大面積の基板上に均一に膜質の良好な
薄膜を形成できる高周波プラズマＣＶＤ装置を提供する
ことを目的とする。The present invention has been made to solve the above problems, and an object of the present invention is to provide a high frequency plasma CVD apparatus capable of uniformly forming a thin film having a good film quality on a large-area substrate.
【０００７】[0007]
【課題を解決するための手段】本発明の高周波プラズマ
ＣＶＤ装置は、反応容器内に、カソード電極と、前記カ
ソード電極の側面および裏面を囲うアースシールドと、
前記カソード電極に対向して設けられ基板が設置される
ヒーター内蔵アノード電極とを有するとともに、反応ガ
ス供給管および反応ガス排気管とを有し、高周波電源か
らインピーダンス整合器を介して前記電極間に高周波電
力を供給することにより前記反応容器内でプラズマを発
生させる高周波プラズマＣＶＤ装置において、前記カソ
ード電極の表面に波状の凹凸を設けたことを特徴とする
ものである。A high frequency plasma CVD apparatus according to the present invention comprises a cathode electrode, a ground shield surrounding a side surface and a back surface of the cathode electrode, in a reaction vessel.
It has an anode electrode with a built-in heater which is provided so as to face the cathode electrode and on which a substrate is placed, and also has a reaction gas supply pipe and a reaction gas exhaust pipe, and between a high frequency power supply and an impedance matching device between the electrodes. In a high-frequency plasma CVD apparatus for generating plasma in the reaction vessel by supplying high-frequency power, a corrugated unevenness is provided on the surface of the cathode electrode.
【０００８】[0008]
【作用】成膜時の条件としては、反応ガスを多量に流
し、かつ電極間の電力密度分布を一様にすることが好ま
しい。すなわち図３に示すように、一般的に、反応ガス
流量が多量であれば、成膜速度は電力に比例する関係が
ある。したがって、電極間の電力密度を制御すれば、膜
厚分布を一様にできる。It is preferable that a large amount of reaction gas is flown and the power density distribution between the electrodes is made uniform as conditions for film formation. That is, as shown in FIG. 3, generally, when the flow rate of the reaction gas is large, the film formation rate has a relationship proportional to the electric power. Therefore, the film thickness distribution can be made uniform by controlling the power density between the electrodes.
【０００９】この条件を実現するために、本発明の装置
では、カソード電極の表面に凹凸の溝を設けて表面積の
増加させている。このような構成を採用すれば、凹凸の
溝を設けた部分では、カソード電極とアノード電極間の
静電容量（コンダクタンス）が局所的に大きくなり、高
周波に対する局所的共振周波数が小さくなるので、高周
波電力の強さを弱めることができる。したがって、図４
に示すように、電極間の全面にわたってプラズマを一様
の強さで発生させることができる。これは、従来の装置
のようにカソード電極とアノード電極とが平板である場
合に、図７または図８に示すように電極間の中央部また
は周辺部でプラズマが強く発生するのとは対照的であ
る。本発明において、カソード電極中央部に設けられる
凹凸の形状は、深さ３〜６ｍｍ、ピッチ４〜１０ｍｍ程
度の丸みのある波状が好ましい。In order to realize this condition, in the device of the present invention, an uneven groove is provided on the surface of the cathode electrode to increase the surface area. If such a configuration is adopted, the electrostatic capacitance (conductance) between the cathode electrode and the anode electrode is locally increased in the portion where the concave and convex grooves are provided, and the local resonance frequency with respect to the high frequency is reduced. The power strength can be reduced. Therefore, FIG.
As shown in, plasma can be generated with uniform intensity over the entire surface between the electrodes. This is in contrast to the case where the cathode electrode and the anode electrode are flat plates as in the conventional device, in which plasma is strongly generated in the central portion or the peripheral portion between the electrodes as shown in FIG. 7 or 8. Is. In the present invention, the shape of the unevenness provided in the central portion of the cathode electrode is preferably a wavy shape having a depth of 3 to 6 mm and a pitch of about 4 to 10 mm.
【００１０】[0010]
【実施例】以下、本発明の実施例を図面を参照して説明
する。図１は本発明に係る高周波プラズマＣＶＤ装置の
概略構成図である。なお、図６に示す従来の装置と同一
の部材には同一の符号を付している。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic configuration diagram of a high-frequency plasma CVD apparatus according to the present invention. The same members as those of the conventional device shown in FIG. 6 are designated by the same reference numerals.
【００１１】図１において、反応容器１６内には、グロ
ー放電プラズマを発生させるためのカソード電極１１と
アノード電極１２とが互いに平行に配置されている。カ
ソード電極１１は絶縁物１９を介して反応容器１６に固
着されている。アノード電極１２は図示しない支持台に
より反応容器１６に固着され、かつ電気的にも導通状態
になっている。In FIG. 1, in a reaction vessel 16, a cathode electrode 11 and an anode electrode 12 for generating glow discharge plasma are arranged in parallel with each other. The cathode electrode 11 is fixed to the reaction vessel 16 via an insulator 19. The anode electrode 12 is fixed to the reaction container 16 by a support (not shown), and is also electrically conductive.
【００１２】カソード電極面１００の中央部には深さ３
〜６ｍｍ、ピッチ４〜１０ｍｍの正弦波状の溝１０１が
設けられている。図２に示すように、カソード電極面１
００の中央部とは、カソード電極１１の直径（円形の場
合）または一辺の長さ（四角形の場合）をＤとして、カ
ソード電極１１中央の直径または一辺の長さがＤ／２程
度の範囲の部分をいう。カソード電極１１は中空になっ
ており、反応ガスを電極間に均一に放出するために、ア
ノード電極１２に対向する部分に直径０．１〜０．５ｍ
ｍ程度の微小な反応ガス噴出孔１７が多数設けられてい
る。カソード電極１１には反応ガス供給管１５が接続さ
れている。図示しない反応ガス供給装置より供給された
反応ガスは、反応ガス供給管１５を介して反応ガス噴出
孔１７から噴出する。カソード電極１１のアノード電極
１２と対向しない部分には、異常放電を抑制するために
アースシールド１３が配置されている。At the center of the cathode electrode surface 100, there is a depth of 3
A sinusoidal groove 101 having a pitch of ˜6 mm and a pitch of 4 to 10 mm is provided. As shown in FIG. 2, the cathode electrode surface 1
The central part of 00 is a diameter (in the case of a circle) or the length of one side (in the case of a quadrangle) of the cathode electrode 11 is D, and the diameter of the center of the cathode electrode 11 or the length of the side is in the range of about D / 2. Refers to the part. The cathode electrode 11 is hollow, and has a diameter of 0.1 to 0.5 m at a portion facing the anode electrode 12 in order to uniformly discharge the reaction gas between the electrodes.
A large number of minute reaction gas ejection holes 17 of about m are provided. A reaction gas supply pipe 15 is connected to the cathode electrode 11. The reaction gas supplied from a reaction gas supply device (not shown) is ejected from the reaction gas ejection hole 17 through the reaction gas supply pipe 15. A ground shield 13 is arranged at a portion of the cathode electrode 11 that does not face the anode electrode 12 in order to suppress abnormal discharge.
【００１３】アノード電極１２上には図示しない基板ホ
ルダにより基板１４が設置される。アノード電極１２は
図示しないヒータを内蔵しており、基板１４の温度を４
００℃以下の任意の値に設定できる。A substrate 14 is placed on the anode electrode 12 by a substrate holder (not shown). The anode electrode 12 has a built-in heater (not shown) and controls the temperature of the substrate 14 to 4
It can be set to any value below 00 ° C.
【００１４】反応容器１６内のガスは、排気孔２０、２
１より排気される。カソード電極１１およびアノード電
極１２には、図示しないインピーダンス整合器付き高周
波電源より電力供給線１８および反応容器１６を介して
電力が供給される。The gas in the reaction vessel 16 is exhausted through the exhaust holes 20, 2
Exhausted from 1. Electric power is supplied to the cathode electrode 11 and the anode electrode 12 through a power supply line 18 and a reaction vessel 16 from a high frequency power source with an impedance matching device (not shown).
【００１５】この装置によりａ−Ｓｉ薄膜を形成する場
合について以下に説明する。図示しない真空ポンプを稼
動して、反応容器１６内を排気する。例えば１×１０-7
Ｔｏｒｒの圧力になった後、図示しない反応ガス供給装
置より反応ガス供給管１５を通してモノシランガスを５
０〜１００ｃｃ／ｍｉｎの流量で供給し、反応容器１６
内の圧力を０．１〜０．５Ｔｏｒｒに保つ。次いで、図
示しないインピーダンス整合器付き高周波電源より電力
供給線１８および反応容器１６を介してカソード電極１
１およびアノード電極１２間に電力を供給する。こうし
て、電極間にモノシランガスのグロー放電プラズマが発
生する。The case of forming an a-Si thin film with this apparatus will be described below. A vacuum pump (not shown) is operated to exhaust the inside of the reaction vessel 16. For example, 1 × 10 -7
After reaching the pressure of Torr, the reaction gas supply device (not shown) supplies the reaction gas supply pipe 15 to supply the monosilane gas to
The reaction vessel 16 is supplied at a flow rate of 0 to 100 cc / min.
The internal pressure is kept at 0.1 to 0.5 Torr. Then, the cathode electrode 1 is fed from a high frequency power source with an impedance matching device (not shown) through the power supply line 18 and the reaction vessel 16.
Power is supplied between 1 and the anode electrode 12. Thus, glow discharge plasma of monosilane gas is generated between the electrodes.
【００１６】本発明の装置では、カソード電極１１の表
面の正弦波状の溝１０１が設けられている中央部では、
溝が設けられていない部分よりも、局所的静電容量が大
きくなる。このため、その部分では共振周波数が小さく
なるので、インピーダンス整合器付き高周波電源より供
給される電力が小さくなる。したがって、従来の装置に
おいて図７に示すように電極間の中央部で強いプラズマ
が発生していたのが抑制されて、図４に示すように電極
間の全面にわたってプラズマを一様の強さで発生させる
ことができる。In the device of the present invention, in the central portion where the sinusoidal groove 101 is provided on the surface of the cathode electrode 11,
The local capacitance is larger than that in the portion where the groove is not provided. For this reason, the resonance frequency becomes small in that portion, and the electric power supplied from the high frequency power source with the impedance matching device becomes small. Therefore, in the conventional device, strong plasma is suppressed from being generated in the central portion between the electrodes as shown in FIG. 7, and the plasma is uniformly distributed over the entire surface between the electrodes as shown in FIG. Can be generated.
【００１７】実際に本発明の装置を用い、基板表面にａ
−Ｓｉ薄膜を堆積させた。実験は、電極の大きさ１２０
０ｍｍ×１２００ｍｍ、ガラス基板の大きさ１０００ｍ
ｍ×１０００ｍｍ、反応ガス流量５０ｃｃ／ｍｉｎ、圧
力０．３Ｔｏｒｒ、高周波電力２００Ｗという条件で実
施した。その結果、図５に示すように、一様な膜厚分布
を示すａ−Ｓｉ薄膜が得られた。Actually, using the apparatus of the present invention, a
-Si thin film was deposited. The experiment was conducted with the size of the electrode 120.
0 mm x 1200 mm, glass substrate size 1000 m
m × 1000 mm, reaction gas flow rate 50 cc / min, pressure 0.3 Torr, and high frequency power 200 W. As a result, as shown in FIG. 5, an a-Si thin film having a uniform film thickness distribution was obtained.
【００１８】また、図１１にアノード電極面において隣
接する溝（深さ５ｍｍ）の間隔を変化させた場合のａ−
Ｓｉ薄膜の膜厚分布を示す。縦軸は膜厚のばらつきを％
で表したものであり、小さい値であるほど膜厚が均一で
あることを示す。図１１から明らかなように、隣接する
溝のピッチが４〜１０ｍｍの場合に膜厚分布が非常に良
好である。Further, in FIG. 11, a- in the case where the interval between adjacent grooves (depth 5 mm) on the anode electrode surface is changed
The film thickness distribution of a Si thin film is shown. The vertical axis shows the variation of the film thickness in%
The smaller the value, the more uniform the film thickness. As is clear from FIG. 11, the film thickness distribution is very good when the pitch between adjacent grooves is 4 to 10 mm.
【００１９】なお、前記実施例ではアモルファスシリコ
ン薄膜を成膜したが、本発明の装置は、反応ガスを変え
るだけで窒化シリコン（Ｓｉ3 Ｎ4 ）やシリカ（ＳｉＯ
2 ）などの成膜にも容易に適用できることはいうまでも
ない。Although the amorphous silicon thin film is formed in the above-mentioned embodiment, the apparatus of the present invention can change the reaction gas to silicon nitride (Si 3 N 4 ) or silica (SiO 2 ).
It goes without saying that it can be easily applied to film formation such as 2 ).
【００２０】[0020]
【発明の効果】以上詳述したように本発明の高周波プラ
ズマＣＶＤ装置を用いれば、大面積の基板上に薄膜を均
一に成膜できる。したがって、太陽電池や液晶ディスプ
レイの分野では、大面積化によるコスト低減および性能
向上が達成でき、工業上の価値が著しく大きい。As described in detail above, by using the high frequency plasma CVD apparatus of the present invention, a thin film can be uniformly formed on a large area substrate. Therefore, in the fields of solar cells and liquid crystal displays, cost reduction and performance improvement can be achieved by increasing the area, and the industrial value is extremely large.
【図１】本発明の一実施例における高周波プラズマＣＶ
Ｄ装置の概略構成図。FIG. 1 is a high-frequency plasma CV according to an embodiment of the present invention.
The schematic block diagram of D apparatus.
【図２】同装置のカソード電極に設けられる凹凸を示す
断面図。FIG. 2 is a cross-sectional view showing unevenness provided on a cathode electrode of the same device.
【図３】プラズマ発生電力と成膜速度との関係を反応ガ
ス流量をパラメータとして示す図。FIG. 3 is a diagram showing the relationship between plasma generation power and film formation rate using a reaction gas flow rate as a parameter.
【図４】本発明の一実施例の高周波プラズマＣＶＤ装置
でのプラズマの発生状況を示す説明図。FIG. 4 is an explanatory diagram showing a plasma generation state in the high frequency plasma CVD apparatus according to the embodiment of the present invention.
【図５】本発明の一実施例の高周波プラズマＣＶＤ装置
で成膜されるアモルファスシリコンの膜厚分布の一例を
示す図。FIG. 5 is a diagram showing an example of a film thickness distribution of amorphous silicon formed by a high frequency plasma CVD apparatus according to an embodiment of the present invention.
【図６】従来の高周波プラズマＣＶＤ装置の概略構成
図。FIG. 6 is a schematic configuration diagram of a conventional high-frequency plasma CVD apparatus.
【図７】従来の高周波プラズマＣＶＤ装置でのプラズマ
の発生状況の一例を示す説明図。FIG. 7 is an explanatory diagram showing an example of a plasma generation state in a conventional high-frequency plasma CVD apparatus.
【図８】従来の高周波プラズマＣＶＤ装置でのプラズマ
の発生状況の他の例を示す説明図。FIG. 8 is an explanatory diagram showing another example of a plasma generation state in a conventional high-frequency plasma CVD apparatus.
【図９】従来の高周波プラズマＣＶＤ装置で成膜される
アモルファスシリコンの膜厚分布の一例を示す図。FIG. 9 is a diagram showing an example of a film thickness distribution of amorphous silicon formed by a conventional high-frequency plasma CVD apparatus.
【図１０】従来の高周波プラズマＣＶＤ装置で成膜され
るアモルファスシリコンの膜厚分布の他の例を示す図。FIG. 10 is a diagram showing another example of the film thickness distribution of amorphous silicon formed by a conventional high-frequency plasma CVD apparatus.
【図１１】本発明の一実施例の高周波プラズマＣＶＤ装
置において、カソード電極に設けられる凹凸の間隔とア
モルファスシリコンの膜厚分布との関係を示す図。FIG. 11 is a diagram showing a relationship between an interval between irregularities provided on the cathode electrode and a film thickness distribution of amorphous silicon in the high frequency plasma CVD apparatus according to the embodiment of the present invention.
１１…カソード電極、１２…アノード電極、１４…基
板、１５…ガス供給管、１６…反応容器、１７…噴出
孔、２０、２１…排気孔、１００…カソード電極面、１
０１…溝。11 ... Cathode electrode, 12 ... Anode electrode, 14 ... Substrate, 15 ... Gas supply pipe, 16 ... Reaction vessel, 17 ... Jet hole, 20, 21 ... Exhaust hole, 100 ... Cathode electrode surface, 1
01 ... groove.
Claims (1)
ソード電極の側面および裏面を囲うアースシールドと、
前記カソード電極に対向して設けられ基板が設置される
ヒーター内蔵アノード電極とを有するとともに、反応ガ
ス供給管および反応ガス排気管とを有し、高周波電源か
らインピーダンス整合器を介して前記電極間に高周波電
力を供給することにより前記反応容器内でプラズマを発
生させる高周波プラズマＣＶＤ装置において、前記カソ
ード電極の表面に波状の凹凸を設けたことを特徴とする
高周波プラズマＣＶＤ装置。1. A cathode electrode, an earth shield surrounding a side surface and a back surface of the cathode electrode, in a reaction vessel,
It has an anode electrode with a built-in heater which is provided so as to face the cathode electrode and on which a substrate is placed, and also has a reaction gas supply pipe and a reaction gas exhaust pipe, and between a high frequency power supply and an impedance matching device between the electrodes. A high-frequency plasma CVD apparatus for generating plasma in the reaction vessel by supplying high-frequency power, characterized in that corrugated irregularities are provided on the surface of the cathode electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15830792A JPH065522A (en) | 1992-06-17 | 1992-06-17 | High frequency plasma cvd device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15830792A JPH065522A (en) | 1992-06-17 | 1992-06-17 | High frequency plasma cvd device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH065522A true JPH065522A (en) | 1994-01-14 |
Family
ID=15668774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15830792A Withdrawn JPH065522A (en) | 1992-06-17 | 1992-06-17 | High frequency plasma cvd device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH065522A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998032154A1 (en) * | 1997-01-17 | 1998-07-23 | Balzers Aktiengesellschaft | Capacitively coupled rf-plasma reactor |
| EP0887836A2 (en) * | 1997-06-26 | 1998-12-30 | Sharp Kabushiki Kaisha | Electronic device fabrication apparatus |
| US6326304B1 (en) | 1999-02-26 | 2001-12-04 | Kaneka Corporation | Method of manufacturing amorphous silicon based thin film photoelectric conversion device |
| KR20170113093A (en) * | 2016-03-25 | 2017-10-12 | 시바우라 메카트로닉스 가부시끼가이샤 | Plasma processing apparatus |
| JPWO2017149738A1 (en) * | 2016-03-03 | 2018-12-06 | コアテクノロジー株式会社 | Structure of plasma processing apparatus and reaction container for plasma processing |
-
1992
- 1992-06-17 JP JP15830792A patent/JPH065522A/en not_active Withdrawn
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998032154A1 (en) * | 1997-01-17 | 1998-07-23 | Balzers Aktiengesellschaft | Capacitively coupled rf-plasma reactor |
| US5981899A (en) * | 1997-01-17 | 1999-11-09 | Balzers Aktiengesellschaft | Capacitively coupled RF-plasma reactor |
| US6281469B1 (en) | 1997-01-17 | 2001-08-28 | Unaxis Balzers Aktiengesellschaft | Capacitively coupled RF-plasma reactor |
| EP0887836A2 (en) * | 1997-06-26 | 1998-12-30 | Sharp Kabushiki Kaisha | Electronic device fabrication apparatus |
| US5935374A (en) * | 1997-06-26 | 1999-08-10 | Sharp Kabushiki Kaisha | Electronic device fabrication apparatus |
| EP0887836A3 (en) * | 1997-06-26 | 2000-10-18 | Sharp Kabushiki Kaisha | Electronic device fabrication apparatus |
| US6326304B1 (en) | 1999-02-26 | 2001-12-04 | Kaneka Corporation | Method of manufacturing amorphous silicon based thin film photoelectric conversion device |
| JPWO2017149738A1 (en) * | 2016-03-03 | 2018-12-06 | コアテクノロジー株式会社 | Structure of plasma processing apparatus and reaction container for plasma processing |
| US11227748B2 (en) | 2016-03-03 | 2022-01-18 | Core Technology, Inc. | Plasma treatment device and structure of reaction vessel for plasma treatment |
| KR20170113093A (en) * | 2016-03-25 | 2017-10-12 | 시바우라 메카트로닉스 가부시끼가이샤 | Plasma processing apparatus |
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| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
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