JPS58100854A - Electrophotographic receptor - Google Patents

Abstract

PURPOSE:To obtain a receptor for a laser printer having superior durability and causing little reduction of the potential by forming the 1st, the 2nd and the 3rd photosensitive layers on an electrically conductive support by vacuum deposition while specifying the elements used in the layers and the thickness of the layers. CONSTITUTION:A support 1 such as an Al plate is set on a support holding section in a vacuum deposition apparatus and heated to 70 deg.C. Se-As contg. 0.5- 5wt% As is deposited in 30-80mum thickness to form a charge transferring layer as the 1st layer 2. Se-Te-halogen contg. 25-60wt% Te and 10-200ppm halogen is deposited on the layer 2 in 1-10mum thickness to form a charge generating layer as the 2nd layer 3. Se-As contg. 0.5-2wt% As is then deposited on the layer 3 in 1-6mum thickness to form a charge retaining layer as the 3rd layer 4. Thus, an electrophotographic receptor for a laser printer is obtd. The resulting receptors A, B have high spectral sensitivity up to a longer wavelength range and high durability.

Description

【発明の詳細な説明】 本発明は、電子写真用感光体に関する。[Detailed description of the invention] The present invention relates to an electrophotographic photoreceptor.

現在、高速、高解惨、任意パターンの印字が可能な電子
写真方式が広く使用されている。特にレーザープリンタ
ーが主流で主として高速プリンターとしての開発が盛ん
である。Currently, electrophotographic methods, which are capable of high speed, high resolution, and printing of arbitrary patterns, are widely used. In particular, laser printers are mainstream and are being actively developed mainly as high-speed printers.

電子写真方式に使用される感光体は、耐久性に優れ、疲
労机象あるいは電位低下が少ない等の性能が請求される
、又、レーザープリンターにおいては長波長域まで分光
ＩＩＩＡｆが伸びている必要がある。Photoreceptors used in electrophotography are required to have excellent durability, low fatigue phenomena and potential drop, and in laser printers, the spectral IIIAf must extend to a long wavelength range. be.

従来より、感光体材料としてＳ・がよ（用いられている
が１％性改畳のためにＡｍ、　８ｂ、　Ｔ・等を添加す
る方法がとられている。特にＴｅ　の添加によれば、無
添加Ｓ・の分光感度に比べ著じ（長波長域に感度ｔＷす
る感光体が可能となる。Traditionally, S. gayo has been used as a photoreceptor material, but a method of adding Am, 8b, T., etc. is used for 1% modification. In particular, by adding Te, Compared to the spectral sensitivity of non-additive S, it is possible to create a photoreceptor with sensitivity tW in the long wavelength range.

このように、Ｓ・に添加物を加えた従来の感光体として
は、特開昭５６−５７０４０号公報。As described above, a conventional photoreceptor in which additives are added to S. is disclosed in Japanese Patent Application Laid-Open No. 56-57040.

特開昭５６−１２６４７号公報及び横須賀通研沖電気に
よる画倫電子学会予稿（８０−０１１−９）等がある。There are Japanese Unexamined Patent Publication No. 12647/1983 and the Proceedings of the Society of Artistic Ethics and Electronics (80-011-9) by Yokosuka Tsuken Oki Electric.

これらは、単独Ｓ＠の感光体に比べ分光ｌｌ７Ａ度が良
好でレーザープリンターに使用可能なものではあるが、
いずれも１１惜品質に大きな影響？与える残留電位の上
昇の問題は十分に解決これていない。Although these have a better spectral 117A degree than the single S@ photoreceptor and can be used in laser printers,
Do any of them have a big impact on the quality of the 11th grade? The problem of increased residual potential has not been satisfactorily solved.

又、感光体は央用上、連続繰り返しの便用に耐えられる
ことか必須であり、残留電位の上昇は感光体の繰り返し
使用に比して顕著になる。Furthermore, since the photoreceptor is used for central use, it is essential that it can withstand repeated use, and the increase in residual potential becomes more significant than when the photoreceptor is used repeatedly.

本発明の目的は、前述し皮工うな電子写真画感光体に必
ｌ！Ｌな諸条件、つまり耐久性に優れ。The object of the present invention is to provide the above-mentioned electrophotographic photoreceptor with a leather finish. L conditions, that is, excellent durability.

疲労現象あるいは電位低下が少なく、レーザープリンタ
ーに使用し得える十分な分光ＩＩＩＡ度を有し、繰り返
し使用時の残留電位の非常に少ない等を具備した総合的
に優れ友特性を示す電子写真用感光体を供与することに
あり１本発明者らは鋭意検討を重ねた結果１本発明を完
成した０即ち１本発明の電子写真用感光体は、第ｉｌｌ
が８ｅ−Ａｓ（Ａｓ　Ｏ，５〜５ｗｔ％　ｒ膜厚３０−
８０μｍ）。An electrophotographic photosensitive material that exhibits excellent overall characteristics, such as little fatigue or potential drop, sufficient spectral IIIA degree for use in laser printers, and extremely low residual potential during repeated use. 1 The inventors of the present invention have completed the present invention as a result of intensive studies.
is 8e-As (As O, 5~5wt% r film thickness 30-
80μm).

纂２拳がａｓ−Ｔｏ−ｉｓロゲン元素（Ｔ＠２５〜６０
ｖｔｉハロゲン元素１０〜２００ｐｐｍｉ編厚１〜ｌＯ
Ａｍ）及び第３層が８ｅ−Ａｓ（ＡｓＯ，５〜２　ｗｔ
４　Ｉ膜厚１〜６μｍ）からなる感光層を有することｔ
−＊徴とするものである。The second fist is as-To-is Rogen element (T@25~60
vti halogen element 10~200ppmi thickness 1~1O
Am) and the third layer is 8e-As (AsO, 5~2 wt
4. Having a photosensitive layer consisting of a film thickness of 1 to 6 μm)
−*This is a sign.

一般に、Ｔ・　の添加によって分光感ｆｔ長波長域に伸
ばすことができるが１反面、固有抵抗が低下して帯電能
力の低下を招く。更に、正孔トラップの数が増大し、正
孔の移ｌ１ｌｌｌＷＬが低下して残留電位の上昇を助長
することになる。Generally, the spectral sensitivity can be extended to a long wavelength region by adding T. However, on the other hand, the specific resistance decreases, leading to a decrease in the charging ability. Furthermore, the number of hole traps increases, and the hole transfer l1llllWL decreases, which helps increase the residual potential.

この間ＩＩＩを解決するには、Ｓ・−丁・　鳩を極数に
薄（するか、トラップを消去するための元素を添加する
必要がわる。Ｓ・−Ｔ＠　層を極度に薄（する（例えば
０．０５〜０．５μｍ程度］と、電荷発生又は絶対感度
が不十分となる。In order to solve the problem III, it is necessary to make the S・-T@ layer extremely thin (or add an element to eliminate the trap). For example, about 0.05 to 0.5 μm], charge generation or absolute sensitivity becomes insufficient.

しかるに、絶対悪Ｉｆを維持しつつ、・残留電位の上昇
を防止するためにノ・ロゲン元素（Ｃ）、Ｉ。However, in order to maintain the absolute evil If and prevent the residual potential from increasing, the rogen elements (C) and I.

Ｂｒ等）を添加する。Br, etc.).

又、長波長増感の几めＴｅｔ　２５　ｖｔ４以上添加す
るが、比抵抗が１０１１Ω・ａ以下となり帯電能力の低
下を招（ことになるので、これを補助する鳩を設ける必
要がある。In addition, although Tet 25 vt4 or more is added to increase long-wavelength sensitization, the specific resistance becomes less than 10 11 Ω·a, resulting in a decrease in charging ability (this results in a decrease in charging ability), so it is necessary to provide a support for this.

本発明のＳ−を体ｔｚ、ｔ＃に以上の点を留意して完成
されたものであり、ｊ！！に感光体の概略−に基づいて
本発明を詳述する。The S- of the present invention has been completed with the above points in mind, and the S- body tz, t# has been completed with the above points in mind. ! The present invention will be explained in detail based on the outline of the photoreceptor.

第１図は１本発明の感光体の概略図である。FIG. 1 is a schematic diagram of a photoreceptor according to the present invention.

支持体１１＋上に、第１層（２）、藁２噛（３）及び第
１ＩＩＩ（４１からなる感光層を設けである。支持体口
ＩはＭ等の導電性のものが使用される。第１ｐｍ（２）
はＳ＠Ｋ　Ａｓｆ：０．５〜５　ｗｔ％添加しておｐ、
ｍ荷輸送鳩の役目を果す。Ａｍは、結１化防止の働きを
し。A photosensitive layer consisting of a first layer (2), a layer of straw (3) and a first layer (41) is provided on the support 11+.A conductive material such as M is used for the support opening I. 1st pm (2)
Add S@K Asf: 0.5 to 5 wt%,
m It plays the role of a cargo transporting pigeon. Am acts as a preventive agent.

添加量が５　ｗｔ４以上では残留電位の増加の友め好し
くな（、０，５ｗｔ４以下では結晶化防止の効果がない
、又、第１智（２）の膜厚は、良好な帯電能力を得るた
めに３０〜８０μｍが望ましい。If the amount added is 5wt4 or more, the residual potential will increase (but if it is less than 0.5wt4, there is no crystallization prevention effect, and the film thickness of the first wisdom (2) does not have a good charging ability. 30 to 80 μm is desirable to obtain.

纂２階（３）は、電荷発生Ｌ−の役目を果し、第３層（
４）全透過し次光で数多（の電子−正孔対を発生して、
その全てが有効に働（必要がある。この目的を達成させ
る友めにａＳに増感材としてＴ＠を２５〜６０　ｗｔ４
　（好ましくは３０〜５５　ｖｔ％）添加した。２５　
ｗｔ％以下では感度不足となり。The second layer (3) plays the role of charge generation L-, and the third layer (
4) A large number of (electron-hole pairs) are generated by the completely transmitted light,
All of them work effectively (it is necessary. To achieve this purpose, add 25 to 60 wt
(preferably 30-55 vt%). 25
Below wt%, sensitivity will be insufficient.

６０　ｗｔ傷以上では解憐力の低下を招く。A wound of 60 wt or more will lead to a decline in healing power.

更に、Ｔｓ添加による前述したような間Ｉ！を解決する
ためにハロゲン元素ｔ−１０〜２００　ｐｐｍ（ｔｋｆ
ｌしくは２０〜１００　ｐｐｍ　）　１にｍ　（３）に
添加した。１θｐｐｍ　Ｔ：は効果がな（，２００ｐｐ
ｍ以上では固有抵抗が極度に下が９．高＃［のＴ。Furthermore, the above-mentioned interval I! due to the addition of Ts! In order to solve the problem, halogen element t-10~200 ppm (tkf
or 20 to 100 ppm) was added to 1 m (3). 1θppm T: has no effect (,200ppm
Above m, the specific resistance becomes extremely low.9. High #[T.

の岳加とあいまって１儂の解像力の低下の原因となる。Combined with the addition of light, this causes a decrease in the resolution of the first image.

膜厚は２〜１０μｍが好ましい。The film thickness is preferably 2 to 10 μm.

第３層（４）は、電荷保持１−の役目を果し、Ｓ・に結
晶化防止のためＡｓ　　をＯ，Ｓ〜２　Ｗｔ憾添加した
。The third layer (4) plays the role of charge retention 1-, and As is added to S to prevent crystallization.

膜厚は１〜６　ＪＪｍが好ましく、ｍ三層（４）は波長
が７００　ｎｍ以上の＋、が透過する必要があることと
、絹二Ｆｔｌ　１３＋で発生した電子−正孔対の電子が
着層の電荷に向って迅速に移動する必ｌ！があるため、
第三ｌＩ＃を厚くする仁とは好ましくない一又、Ａｓの
必要以上の添加は正孔の移動板の低下を招くため好まし
くない。The film thickness is preferably 1 to 6 JJm, and the three layers (4) must allow light with a wavelength of 700 nm or more to pass through, and the electrons of the electron-hole pairs generated in the silk two Ftl 13+ must be attached. It is necessary to move quickly towards the charge of the layer! Because there is
Addition of more than necessary As is undesirable because it increases the thickness of the third lI#, and it is also undesirable because it lowers the hole transfer plate.

以下に実施例を示す。Examples are shown below.

実施例 小型真空蒸着装置において、着面処理を施したアルミニ
ウム板を温度７０ｔＫ設定した基板支持部にセットし、
１〜２　Ｘ　１　ｏ−’Ｔｏｒｒまで排気して１本発明
及び比較用感光体の感光試料をアルミニウム板上に、１
！１−から順次蒸着して第１表に示される組成及び膜厚
からなる本発明及び比較用Ｊ１元体を得た。Example In a small-sized vacuum evaporation apparatus, an aluminum plate subjected to surface deposition treatment was set on a substrate support section whose temperature was set to 70 tK,
The photosensitive samples of the present invention and the comparative photoreceptor were placed on an aluminum plate by evacuation to 1 to 2 X 1 o-' Torr.
! The present invention and comparative J1 element having the compositions and film thicknesses shown in Table 1 were obtained by sequentially depositing from 1- to 1-.

（以下余白） 次に、得られた感光体ｔ−２日間暗鵬応させた後、川口
電機製ペーノゼ−アナライザー（ＢＰ−４２８）？電気
特性Ｙｔ測足シ、結果ｔ＠２１！に示した。(The following is a margin) Next, the obtained photoreceptor was subjected to a dark test for t-2 days, and then used with Kawaguchi Denki's Penose Analyzer (BP-428). Electrical characteristics Yt measurement, result t@21! It was shown to.

第　　２　　表 ＶＭ：＋１１１μＡのコロナ電流印加２ｏ秒後の帯電電
位 ＲＤＤ　：　ＶＭより２０秒後のＦｌｉ減衰比８ｗ：１
０００Ｖ帯電後２１．１ｉ　２　／ＪＷ　／　６ｗ諺の
２エネルギーを与えて１００Ｖｊで低下するに要する時
間 ＳＲ二上記元エネルギーにＢｅ−ｇｏ（コダックラツテ
ンフィルターを組合わせて１００ＯＶよｔ）１００ＶＫ
低下する＃Ｃ要する時間■Ｄ二ＩＩＡ元光体００回繰り
返し使用後の残留電位 更に分光感ｆを求め、結果を幻覚波長で３１１２図に示
した。（Ａは実施例１．Ｂは冥施例２゜Ｃは比較例１の
曲線である。） 以上から明らかなように１本発明の記録体は帯電電位、
暗減衰比とも良好で、残留電位においてを工２００１！
Ｉｌｌの繰り返し使用後の比較例のそれと比べ非常に小
さく、長波長域での分光ａｍ’も申し分な（総合的に優
れ交感光体であることか判明し友。Table 2 VM: Charging potential RDD 20 seconds after application of +111 μA corona current: Fli attenuation ratio 20 seconds after VM 8w:1
After charging to 000V 21.1i 2 / JW / 6w The time required to give the proverbial 2 energy and drop to 100Vj SR 2 Be-go to the above original energy (100OV in combination with Kodak Ratten filter) 100VK
Required time for #C to decrease ■ D2 IIA original light body Residual potential after repeated use 00 times In addition, the spectral sensitivity f was determined, and the results are shown in Figure 3112 at the hallucinatory wavelength. (A is the curve of Example 1, B is the curve of Comparative Example 2, and C is the curve of Comparative Example 1.) As is clear from the above, the recording material of the present invention has a charging potential of
The dark decay ratio is good, and the residual potential is 2001!
It is very small compared to that of the comparative example after repeated use of Ill, and the spectroscopic am' in the long wavelength range is also perfect (it turns out that it is an excellent sympathizer overall).

なお、Ｓ光体の耐結晶においても問題はなかった。There were no problems with the crystallization resistance of the S light body.

【図面の簡単な説明】[Brief explanation of the drawing]

第１−は５本発明の電子写真用７１１元体の概略図であ
る。纂２図は１本発明及び比較用感光体の光波長に対す
る分１１［の変化を示すグラフである。 ｌ・・・支持体　　　　　２・・・ＩＫ　１１ｍ３・・
・＠　２１＠　　　　　　４・・・ｍ３噛Ａ・・・実施
例１の曲線　　Ｂ・・・実施例２の曲線Ｃ・・・比較例
１の曲線No. 1- is a schematic diagram of the 711 element for electrophotography according to the present invention. Figure 2 is a graph showing the change in the wavelength of light for the photoreceptors of the present invention and for comparison. l...Support 2...IK 11m3...
・＠ 21＠ 4...m3 bite A...Curve of Example 1 B...Curve of Example 2 C...Curve of Comparative Example 1

Claims (1)

【特許請求の範囲】[Claims] １、＠１１９１がＢｅ−Ａｓ　（Ａｓ　ｏ、　５〜５ｖ
ｔ４　ｉ膜厚３０〜ｓｏＪＡｍ　）ｌＬ２ｔ―が５ｓ−
Ｔｏ−７％　Ｃｌゲン元素（Ｔ・２５＝６０ｖｔ憾、ハ
ロゲン元素ｌＯ〜２００　ｐｐｆｎ　ｉ膜厚１〜１０μ
ｍ）及び第３層か５ｅ−Ａｓ（λＩ　Ｑ、１ｓ〜２　Ｗ
　ｔ　Ｔｏ　ｉ膜厚１〜６　ａｍ）からなるｌ＆元層を
有することを特徴とする電子写真用感光体。1, @1191 is Be-As (As o, 5~5v
t4 i film thickness 30~soJAm)lL2t- is 5s-
To-7% Cl gene element (T・25=60vt, halogen element lO~200 ppfn i film thickness 1~10μ
m) and the third layer 5e-As (λI Q, 1s~2W
A photoreceptor for electrophotography, characterized in that it has a base layer having a film thickness of 1 to 6 am).