JPS5799780A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5799780A JPS5799780A JP55176723A JP17672380A JPS5799780A JP S5799780 A JPS5799780 A JP S5799780A JP 55176723 A JP55176723 A JP 55176723A JP 17672380 A JP17672380 A JP 17672380A JP S5799780 A JPS5799780 A JP S5799780A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- constitution
- dust
- decrease
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 2
- 239000000428 dust Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To decrease occupied area, and to prevent the effect of a defect due to dust, etc. by vertically forming a MOS transistor to the surface of a substrate. CONSTITUTION:The P type Si substrate 1 is separated by a SiO2 film 2, and an N layer 3 is diffused annularly. A P layer 4 and an N layer 5 are formed selectively onto the substrate surrounded by the N layer 3, including one part of the layer 3. Gate oxide films 14, gate electrodes 6 and a protective oxide film 7 are shaped, and electrodes 8-13 are attached. According to this constitution, a parallel circuit of the four vertical FETs with the sources 3, the drains 5, channels 15 (layer 4 side sections) and the gates 6 is obtained the occupied area is reduced, the defects due to dust, etc. on the surface of an element also decrease, and yield is improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55176723A JPS5799780A (en) | 1980-12-11 | 1980-12-11 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55176723A JPS5799780A (en) | 1980-12-11 | 1980-12-11 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5799780A true JPS5799780A (en) | 1982-06-21 |
Family
ID=16018645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55176723A Pending JPS5799780A (en) | 1980-12-11 | 1980-12-11 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5799780A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6070757A (en) * | 1983-09-28 | 1985-04-22 | Hitachi Ltd | Semiconductor integrated circuit |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5574174A (en) * | 1978-11-30 | 1980-06-04 | Toshiba Corp | Interpolation type insulating gate field effect transistor |
-
1980
- 1980-12-11 JP JP55176723A patent/JPS5799780A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5574174A (en) * | 1978-11-30 | 1980-06-04 | Toshiba Corp | Interpolation type insulating gate field effect transistor |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6070757A (en) * | 1983-09-28 | 1985-04-22 | Hitachi Ltd | Semiconductor integrated circuit |
JPH0527267B2 (en) * | 1983-09-28 | 1993-04-20 | Hitachi Ltd |
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