JPS5799732A - Semi-amorphous semiconductor - Google Patents

Semi-amorphous semiconductor

Info

Publication number
JPS5799732A
JPS5799732A JP56167583A JP16758381A JPS5799732A JP S5799732 A JPS5799732 A JP S5799732A JP 56167583 A JP56167583 A JP 56167583A JP 16758381 A JP16758381 A JP 16758381A JP S5799732 A JPS5799732 A JP S5799732A
Authority
JP
Japan
Prior art keywords
type
film
added
semi
photoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56167583A
Other languages
English (en)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP56167583A priority Critical patent/JPS5799732A/ja
Publication of JPS5799732A publication Critical patent/JPS5799732A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Led Devices (AREA)
JP56167583A 1981-10-20 1981-10-20 Semi-amorphous semiconductor Pending JPS5799732A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56167583A JPS5799732A (en) 1981-10-20 1981-10-20 Semi-amorphous semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56167583A JPS5799732A (en) 1981-10-20 1981-10-20 Semi-amorphous semiconductor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2638880A Division JPS56122123A (en) 1980-03-03 1980-03-03 Semiamorphous semiconductor

Publications (1)

Publication Number Publication Date
JPS5799732A true JPS5799732A (en) 1982-06-21

Family

ID=15852435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56167583A Pending JPS5799732A (en) 1981-10-20 1981-10-20 Semi-amorphous semiconductor

Country Status (1)

Country Link
JP (1) JPS5799732A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6442120A (en) * 1987-07-27 1989-02-14 Energy Conversion Devices Inc Manufacture of n-type and p-type fine crystalline semiconductor alloy material
JP2010062536A (ja) * 2008-08-05 2010-03-18 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ、及び当該薄膜トランジスタを有する表示装置とその駆動方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J.NON-CRYST.SOLIDS=1979 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6442120A (en) * 1987-07-27 1989-02-14 Energy Conversion Devices Inc Manufacture of n-type and p-type fine crystalline semiconductor alloy material
JP2010062536A (ja) * 2008-08-05 2010-03-18 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ、及び当該薄膜トランジスタを有する表示装置とその駆動方法
US9000441B2 (en) 2008-08-05 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device

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