JPS5796573A - Semiconductor strain transducer - Google Patents

Semiconductor strain transducer

Info

Publication number
JPS5796573A
JPS5796573A JP17204680A JP17204680A JPS5796573A JP S5796573 A JPS5796573 A JP S5796573A JP 17204680 A JP17204680 A JP 17204680A JP 17204680 A JP17204680 A JP 17204680A JP S5796573 A JPS5796573 A JP S5796573A
Authority
JP
Japan
Prior art keywords
gauge resistance
substrate
metallic
resistance element
resistance elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17204680A
Other languages
Japanese (ja)
Other versions
JPH0241183B2 (en
Inventor
Yukio Takahashi
Michitaka Shimazoe
Yoshitaka Matsuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP17204680A priority Critical patent/JPS5796573A/en
Publication of JPS5796573A publication Critical patent/JPS5796573A/en
Publication of JPH0241183B2 publication Critical patent/JPH0241183B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE:To remove drift with time and the hysteresis of temperature by coating the surface of an insulating substance covering a gauge resistance element selectively formed with a conductive substance thinner than a metallic film for an electrode of the gauge resistance element. CONSTITUTION:The P type strain gauge resistance elements 2 are shaped selectively to a substrate such as an N type Si single crystal substrate 1 through diffusion, etc. The surfaces of the substrate 1 and the gauge resistance element 2 are coated with the insulating substance 3 such as silicon dioxide. The metallic electrodes 4 in aluminum, etc. are mounted to the gauge resistance elements 2. Shield metallic films 7 in aluminum, etc. thinner than the metallic electrodes 4 are formed onto the surfaces of the insulating substances 3 coating the gauge resistance elements 2, and wire bonding pads 8 for extracting external lead wires are shaped to the metallic films 7. Accordingly, the mechanical deformation of the shield metallic films has not effects on the substrate, and the drift with time and the hysteresis of temperature are removed.
JP17204680A 1980-12-08 1980-12-08 Semiconductor strain transducer Granted JPS5796573A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17204680A JPS5796573A (en) 1980-12-08 1980-12-08 Semiconductor strain transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17204680A JPS5796573A (en) 1980-12-08 1980-12-08 Semiconductor strain transducer

Publications (2)

Publication Number Publication Date
JPS5796573A true JPS5796573A (en) 1982-06-15
JPH0241183B2 JPH0241183B2 (en) 1990-09-14

Family

ID=15934526

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17204680A Granted JPS5796573A (en) 1980-12-08 1980-12-08 Semiconductor strain transducer

Country Status (1)

Country Link
JP (1) JPS5796573A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5853169B2 (en) * 2010-12-15 2016-02-09 パナソニックＩｐマネジメント株式会社 Semiconductor pressure sensor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5533092A (en) * 1978-08-28 1980-03-08 Babcock & Wilcox Co Pressure transducer having piezooresistance sensor electrically shielded

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5533092A (en) * 1978-08-28 1980-03-08 Babcock & Wilcox Co Pressure transducer having piezooresistance sensor electrically shielded

Also Published As

Publication number Publication date
JPH0241183B2 (en) 1990-09-14

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