JPS5793552A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5793552A
JPS5793552A JP55170077A JP17007780A JPS5793552A JP S5793552 A JPS5793552 A JP S5793552A JP 55170077 A JP55170077 A JP 55170077A JP 17007780 A JP17007780 A JP 17007780A JP S5793552 A JPS5793552 A JP S5793552A
Authority
JP
Japan
Prior art keywords
parasitic capacitance
electrode
semiconductor element
impedance conversion
impedance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55170077A
Other languages
Japanese (ja)
Other versions
JPS6043023B2 (en
Inventor
Naofumi Tsuzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55170077A priority Critical patent/JPS6043023B2/en
Publication of JPS5793552A publication Critical patent/JPS5793552A/en
Publication of JPS6043023B2 publication Critical patent/JPS6043023B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Constitution Of High-Frequency Heating (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To form a transformer necessary for an impedance conversion by employing an insultor provided as a part of an enclosure for hermetically sealing a semiconductor element as a parasitic capacitance element and adding the capacitor as a variable control mechanism thereto. CONSTITUTION:A microwave oscillating semiconductor element 11 such as an IMPATT diode or the like is placed on a heat-sink 12, a metallized layer 19 is formed at the inner periphery of a ceramic ring 13 formed as a part of the atmospheric air as one electrode of a parasitic capacitance element, a threaded cap 17 is provided in contact with a metallic ring 14, a variable capacitance electrode 18 is provided to be engaged with the cap, and the capacity of the element is controlled. Thus, a transformer necessary for the prescribed impedance conversion can be formed, and the characteristic loss upon mismatching of the impedance can be largely reduced.
JP55170077A 1980-12-02 1980-12-02 semiconductor equipment Expired JPS6043023B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55170077A JPS6043023B2 (en) 1980-12-02 1980-12-02 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55170077A JPS6043023B2 (en) 1980-12-02 1980-12-02 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5793552A true JPS5793552A (en) 1982-06-10
JPS6043023B2 JPS6043023B2 (en) 1985-09-26

Family

ID=15898207

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55170077A Expired JPS6043023B2 (en) 1980-12-02 1980-12-02 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS6043023B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996026540A1 (en) * 1995-02-21 1996-08-29 Japan Energy Corporation Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996026540A1 (en) * 1995-02-21 1996-08-29 Japan Energy Corporation Semiconductor device

Also Published As

Publication number Publication date
JPS6043023B2 (en) 1985-09-26

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