JPS5793552A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5793552A JPS5793552A JP55170077A JP17007780A JPS5793552A JP S5793552 A JPS5793552 A JP S5793552A JP 55170077 A JP55170077 A JP 55170077A JP 17007780 A JP17007780 A JP 17007780A JP S5793552 A JPS5793552 A JP S5793552A
- Authority
- JP
- Japan
- Prior art keywords
- parasitic capacitance
- electrode
- semiconductor element
- impedance conversion
- impedance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Constitution Of High-Frequency Heating (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
PURPOSE:To form a transformer necessary for an impedance conversion by employing an insultor provided as a part of an enclosure for hermetically sealing a semiconductor element as a parasitic capacitance element and adding the capacitor as a variable control mechanism thereto. CONSTITUTION:A microwave oscillating semiconductor element 11 such as an IMPATT diode or the like is placed on a heat-sink 12, a metallized layer 19 is formed at the inner periphery of a ceramic ring 13 formed as a part of the atmospheric air as one electrode of a parasitic capacitance element, a threaded cap 17 is provided in contact with a metallic ring 14, a variable capacitance electrode 18 is provided to be engaged with the cap, and the capacity of the element is controlled. Thus, a transformer necessary for the prescribed impedance conversion can be formed, and the characteristic loss upon mismatching of the impedance can be largely reduced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55170077A JPS6043023B2 (en) | 1980-12-02 | 1980-12-02 | semiconductor equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55170077A JPS6043023B2 (en) | 1980-12-02 | 1980-12-02 | semiconductor equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5793552A true JPS5793552A (en) | 1982-06-10 |
JPS6043023B2 JPS6043023B2 (en) | 1985-09-26 |
Family
ID=15898207
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55170077A Expired JPS6043023B2 (en) | 1980-12-02 | 1980-12-02 | semiconductor equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6043023B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996026540A1 (en) * | 1995-02-21 | 1996-08-29 | Japan Energy Corporation | Semiconductor device |
-
1980
- 1980-12-02 JP JP55170077A patent/JPS6043023B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996026540A1 (en) * | 1995-02-21 | 1996-08-29 | Japan Energy Corporation | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6043023B2 (en) | 1985-09-26 |
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