JPS5789476A - Dry etching method - Google Patents
Dry etching methodInfo
- Publication number
- JPS5789476A JPS5789476A JP16431380A JP16431380A JPS5789476A JP S5789476 A JPS5789476 A JP S5789476A JP 16431380 A JP16431380 A JP 16431380A JP 16431380 A JP16431380 A JP 16431380A JP S5789476 A JPS5789476 A JP S5789476A
- Authority
- JP
- Japan
- Prior art keywords
- contact hole
- wafer
- film
- etching process
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To easily remove etching residue, when an etched pattern is formed in an oxide film on the surface of a Si wafer in a dry etching process involving reactive ion etching, by irradiating laser beams to the etched part.
CONSTITUTION: A phosphorus silicide glass film 15 is accumulated on the whole surface of a field oxide film 12, a gate oxide film 13 and a gate electrode 14 on a silicon wafer 11. This glass film-formed Si wafer is heated to diffuse phosphorus into the surface layer of the wafer 11. Thus, a cource and drains 16a, 16b as n+ type diffusion layers are formed. Thereafter, a positive photoresist film 17 is applied to the film 15, and a contact hole-forming resist pattern is formed by an optical etching process. A contact hole 18 is then formed in a reactive ion etching process using the gaseous mixture of CF4 and H2. Laser beams are irradiated to the contact hole 18 in vacuo, to remove C, F-contng. residue the hole 18. Thus, the electric resistance of the contact hole 18 is reduced.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16431380A JPS5789476A (en) | 1980-11-21 | 1980-11-21 | Dry etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16431380A JPS5789476A (en) | 1980-11-21 | 1980-11-21 | Dry etching method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5789476A true JPS5789476A (en) | 1982-06-03 |
Family
ID=15790763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16431380A Pending JPS5789476A (en) | 1980-11-21 | 1980-11-21 | Dry etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5789476A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60253230A (en) * | 1984-05-29 | 1985-12-13 | Mitsubishi Electric Corp | Formation of fine pattern |
| US4875971A (en) * | 1987-04-05 | 1989-10-24 | Elron Electronic Industries, Ltd. | Fabrication of customized integrated circuits |
| US4924287A (en) * | 1985-01-20 | 1990-05-08 | Avner Pdahtzur | Personalizable CMOS gate array device and technique |
| CN108155144A (en) * | 2016-12-02 | 2018-06-12 | 中芯国际集成电路制造(上海)有限公司 | A kind of production method of semiconductor devices |
-
1980
- 1980-11-21 JP JP16431380A patent/JPS5789476A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60253230A (en) * | 1984-05-29 | 1985-12-13 | Mitsubishi Electric Corp | Formation of fine pattern |
| US4924287A (en) * | 1985-01-20 | 1990-05-08 | Avner Pdahtzur | Personalizable CMOS gate array device and technique |
| US4875971A (en) * | 1987-04-05 | 1989-10-24 | Elron Electronic Industries, Ltd. | Fabrication of customized integrated circuits |
| CN108155144A (en) * | 2016-12-02 | 2018-06-12 | 中芯国际集成电路制造(上海)有限公司 | A kind of production method of semiconductor devices |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS56160050A (en) | Semiconductor device and manufacture thereof | |
| JPS5734331A (en) | Manufacture of semiconductor device | |
| JPS5448484A (en) | Forming method of insulation film | |
| JPS5588352A (en) | Manufacture of semiconductor device | |
| JPS5789476A (en) | Dry etching method | |
| KR19990077120A (en) | 3D etching method | |
| JPS5585068A (en) | Preparation of semiconductor device | |
| JPS5772333A (en) | Manufacture of semiconductor device | |
| JPS56100420A (en) | Plasma etching method for oxidized silicon film | |
| JPS5783059A (en) | Manufacture of mos type semiconductor device | |
| JPS5490032A (en) | Plasma etching method | |
| JPS5789477A (en) | Dry etching method | |
| JPS5666038A (en) | Formation of micro-pattern | |
| JPS56131948A (en) | Manufacture of semiconductor element | |
| JPS57180144A (en) | Manufacture of semiconductor device | |
| JPS5526637A (en) | Manufacturing of semiconductor device | |
| JPS57180176A (en) | Manufacturing method for semiconductor device | |
| JPS5710262A (en) | Manufacture of semiconductor device | |
| JPS57173956A (en) | Manufacture of semiconductor device | |
| JPS56115537A (en) | Forming method of infinitesimal pattern | |
| JPS5790940A (en) | Manufacture of semiconductor device | |
| JPS5791537A (en) | Manufacture of semiconductor device | |
| JPS5710930A (en) | Dry development method | |
| JPS5693315A (en) | Manufacture of semiconductor device | |
| JPS5792833A (en) | Manufacture of semiconductor device |