JPS5490032A - Plasma etching method - Google Patents
Plasma etching methodInfo
- Publication number
- JPS5490032A JPS5490032A JP15835877A JP15835877A JPS5490032A JP S5490032 A JPS5490032 A JP S5490032A JP 15835877 A JP15835877 A JP 15835877A JP 15835877 A JP15835877 A JP 15835877A JP S5490032 A JPS5490032 A JP S5490032A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- injected
- base plate
- halogen ion
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To perform etching with faster speed without unevenness by the procedure in which a halogen ion or a halide ion is injected in advance into the layer to be removed by etching of semiconductor, metal, or insulating material and then it is subjected to a plasma etching treatment.
CONSTITUTION: The main face 3a of the Si base plate 3, for example, is provided with the photo resist 9 selectively, and then a halogen ion, e.g., F+, etc., is injected into a depth corresponding to the etching depth of the base plate 3 to form the halogen ion-injected layer 10. The Si-base plate 3 with the injected layer 10 is put in a plasma-etching apparatus and then subjected to a gas plasma etching treatment by CF4 gas, using the photo resist 9 as a mask to form a plural number of the grooves 11. Thus, the unevenness of the depths between the plural grooves 11 can be greatly reduced compared to the conventional methods and also the etching speed can be hastened.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15835877A JPS5490032A (en) | 1977-12-28 | 1977-12-28 | Plasma etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15835877A JPS5490032A (en) | 1977-12-28 | 1977-12-28 | Plasma etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5490032A true JPS5490032A (en) | 1979-07-17 |
Family
ID=15669915
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15835877A Pending JPS5490032A (en) | 1977-12-28 | 1977-12-28 | Plasma etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5490032A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56133835A (en) * | 1980-03-24 | 1981-10-20 | Nec Home Electronics Ltd | Manufacture of semiconductor device |
JPS5789225A (en) * | 1980-08-25 | 1982-06-03 | Gen Electric | Method of rapidly isolating and diffusing |
JPS584923A (en) * | 1981-06-30 | 1983-01-12 | Fujitsu Ltd | Forming method of selective stacked-layer using ion beam radiation |
JPS6265320A (en) * | 1985-09-14 | 1987-03-24 | Agency Of Ind Science & Technol | Manufacture of semiconductor crystal |
US6957683B2 (en) | 1997-11-04 | 2005-10-25 | Toti Andrew J | Spring drive system and window cover |
-
1977
- 1977-12-28 JP JP15835877A patent/JPS5490032A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56133835A (en) * | 1980-03-24 | 1981-10-20 | Nec Home Electronics Ltd | Manufacture of semiconductor device |
JPS5789225A (en) * | 1980-08-25 | 1982-06-03 | Gen Electric | Method of rapidly isolating and diffusing |
JPH0210576B2 (en) * | 1980-08-25 | 1990-03-08 | Gen Electric | |
JPS584923A (en) * | 1981-06-30 | 1983-01-12 | Fujitsu Ltd | Forming method of selective stacked-layer using ion beam radiation |
JPH0412024B2 (en) * | 1981-06-30 | 1992-03-03 | Fujitsu Ltd | |
JPS6265320A (en) * | 1985-09-14 | 1987-03-24 | Agency Of Ind Science & Technol | Manufacture of semiconductor crystal |
JPH051973B2 (en) * | 1985-09-14 | 1993-01-11 | Kogyo Gijutsuin | |
US6957683B2 (en) | 1997-11-04 | 2005-10-25 | Toti Andrew J | Spring drive system and window cover |
US8887788B2 (en) | 1997-11-04 | 2014-11-18 | Russell L. Hinckley, SR. | Methods for operating window covers |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5656636A (en) | Processing method of fine pattern | |
JPS5490032A (en) | Plasma etching method | |
JPS57197827A (en) | Semiconductor substrate | |
JPS57130431A (en) | Manufacture of semiconductor device | |
JPS5666038A (en) | Formation of micro-pattern | |
JPS5789476A (en) | Dry etching method | |
JPS5527623A (en) | Semiconductor wafer dividing method | |
JPS5429573A (en) | Fine machining method of semiconductor | |
JPS5683942A (en) | Plasma etching of poly-crystal semiconductor | |
JPS5230185A (en) | Process for producing semiconductor device | |
JPS55110037A (en) | Method for making semiconductor device | |
JPS5516423A (en) | Forming method of thick metal film pattern | |
JPS579878A (en) | Plasma etching method and apparatus | |
JPS54124687A (en) | Production of semiconductor device | |
JPS5255865A (en) | Gas etching method of stain film | |
JPS51151081A (en) | Mos type semiconductor apparatus and that manufacturing method | |
JPS5378780A (en) | Preparation for semiconductor device | |
JPS5493360A (en) | Plasma etching method | |
JPS5496369A (en) | Mask forming method | |
JPS60253230A (en) | Formation of fine pattern | |
JPS5667941A (en) | Forming method of electrode and wiring layer | |
JPS5693310A (en) | Manufacture of magnetic bubble device | |
JPS5492179A (en) | Removing method for photo resist film | |
JPS5693315A (en) | Manufacture of semiconductor device | |
JPS57100734A (en) | Etching method for semiconductor substrate |