JPS5787123A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5787123A JPS5787123A JP16187780A JP16187780A JPS5787123A JP S5787123 A JPS5787123 A JP S5787123A JP 16187780 A JP16187780 A JP 16187780A JP 16187780 A JP16187780 A JP 16187780A JP S5787123 A JPS5787123 A JP S5787123A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- ion
- injecting
- manufacture
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000137 annealing Methods 0.000 abstract 1
- 239000000470 constituent Substances 0.000 abstract 1
- 238000001465 metallisation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To increase the thickness of a semiconductive layer by ion-injecting at 1X10<21>/cm<3> or more of constituent elements into the semiconductor layer whereby crystallizing it through annealing. CONSTITUTION:A base 3 is formed by injecting B ion into an n epitaxitial layer on an n<+> Si substrate and an n<+> emitter is formed by deffusing As through the opening of SiO24. More than 1X10<21>/cm<3> of Si ion is injected and crystallized by a treatment for more than one hour at 800 deg.C. By this method an emitter push-up disappears and so does a necking 6 and the emitter 5 comes up from the opening. Metallization can prevent the short-circuit between the emitter electrode and the base.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16187780A JPS5787123A (en) | 1980-11-19 | 1980-11-19 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16187780A JPS5787123A (en) | 1980-11-19 | 1980-11-19 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5787123A true JPS5787123A (en) | 1982-05-31 |
Family
ID=15743671
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16187780A Pending JPS5787123A (en) | 1980-11-19 | 1980-11-19 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5787123A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8794905B2 (en) | 2008-04-08 | 2014-08-05 | Ihi Corporation | Turbocharger |
-
1980
- 1980-11-19 JP JP16187780A patent/JPS5787123A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8794905B2 (en) | 2008-04-08 | 2014-08-05 | Ihi Corporation | Turbocharger |
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