JPS5775033A - Gate circuit for gate turn-off thyristor - Google Patents

Gate circuit for gate turn-off thyristor

Info

Publication number
JPS5775033A
JPS5775033A JP55151918A JP15191880A JPS5775033A JP S5775033 A JPS5775033 A JP S5775033A JP 55151918 A JP55151918 A JP 55151918A JP 15191880 A JP15191880 A JP 15191880A JP S5775033 A JPS5775033 A JP S5775033A
Authority
JP
Japan
Prior art keywords
gate
voltage
current
switch
turn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55151918A
Other languages
Japanese (ja)
Inventor
Katsuhiko Naganami
Hiroaki Okaji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55151918A priority Critical patent/JPS5775033A/en
Publication of JPS5775033A publication Critical patent/JPS5775033A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents

Landscapes

  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)

Abstract

PURPOSE:To increase the controllable anode current of a gate turn-off thyristor (GTO), by applying a DC voltage across the gate and the cathode of the GTO when the GTO is turned off and by applying next a DC voltage lower than this DC voltage. CONSTITUTION:A driving signal is supplied from a switch control circuit 36 to a switch 40 to turn off a GTO10. Then, a voltage of a DC power source 32 higher than the breakdown voltage is applied across a gate G and a cathode K of the GTO10, and a gate current IG starts flowing. Next, when the supply of the driving signal to the switch 40 is stopped, the driving signal is supplied to a switch 44 simultaneously; and when the gate current IG reaches a current by which an anode current iT is turned off, the gate current iG is reduced rapidly. At this time, the voltage of the DC power source 42 is set to a value equal to the breakdown voltage between the gate G and the cathode K of the GTO10.
JP55151918A 1980-10-29 1980-10-29 Gate circuit for gate turn-off thyristor Pending JPS5775033A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55151918A JPS5775033A (en) 1980-10-29 1980-10-29 Gate circuit for gate turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55151918A JPS5775033A (en) 1980-10-29 1980-10-29 Gate circuit for gate turn-off thyristor

Publications (1)

Publication Number Publication Date
JPS5775033A true JPS5775033A (en) 1982-05-11

Family

ID=15529037

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55151918A Pending JPS5775033A (en) 1980-10-29 1980-10-29 Gate circuit for gate turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS5775033A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2705513A1 (en) * 1993-05-14 1994-11-25 Telemecanique Static circuit breaker contactor using gate turn-on (GTO) thyristors
JP2008274584A (en) * 2007-04-26 2008-11-13 Jfe Metal Products & Engineering Inc Anchor device setting method and anchor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5530238A (en) * 1978-08-24 1980-03-04 Toshiba Corp Gate driver for gate turn-off thyristor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5530238A (en) * 1978-08-24 1980-03-04 Toshiba Corp Gate driver for gate turn-off thyristor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2705513A1 (en) * 1993-05-14 1994-11-25 Telemecanique Static circuit breaker contactor using gate turn-on (GTO) thyristors
JP2008274584A (en) * 2007-04-26 2008-11-13 Jfe Metal Products & Engineering Inc Anchor device setting method and anchor device

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