JPS5692543A - Preparation of electrophotographic receptor - Google Patents

Preparation of electrophotographic receptor

Info

Publication number
JPS5692543A
JPS5692543A JP16916679A JP16916679A JPS5692543A JP S5692543 A JPS5692543 A JP S5692543A JP 16916679 A JP16916679 A JP 16916679A JP 16916679 A JP16916679 A JP 16916679A JP S5692543 A JPS5692543 A JP S5692543A
Authority
JP
Japan
Prior art keywords
glow discharge
electrophotographic receptor
amorphous silicon
preparation
silicon film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16916679A
Other languages
Japanese (ja)
Inventor
Nobuyoshi Takagi
Kiyoshi Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16916679A priority Critical patent/JPS5692543A/en
Publication of JPS5692543A publication Critical patent/JPS5692543A/en
Pending legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

PURPOSE: To prepare an electrophotographic receptor superior in sensitivity to a long wavelength region, by decomposing monosilane gas containing a specified amount of oxygen gas by glow discharge to form an amorphous silicon film.
CONSTITUTION: A conductive substrate, such as a glass substrate provided with a nesa film is arranged in a high frequency glow discharge device, monosilane gas, such as SiH4 containing 0.5W6vol% oxygen gas is introduced, decomposed by glow discharge, and deposition on the substrate, thus permitting an amorphous silicon film to be formed and to be used as a photoreceptor.
COPYRIGHT: (C)1981,JPO&Japio
JP16916679A 1979-12-27 1979-12-27 Preparation of electrophotographic receptor Pending JPS5692543A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16916679A JPS5692543A (en) 1979-12-27 1979-12-27 Preparation of electrophotographic receptor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16916679A JPS5692543A (en) 1979-12-27 1979-12-27 Preparation of electrophotographic receptor

Publications (1)

Publication Number Publication Date
JPS5692543A true JPS5692543A (en) 1981-07-27

Family

ID=15881484

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16916679A Pending JPS5692543A (en) 1979-12-27 1979-12-27 Preparation of electrophotographic receptor

Country Status (1)

Country Link
JP (1) JPS5692543A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4835507A (en) * 1985-12-06 1989-05-30 Canon Kabushiki Kaisha Photosensor array for image processing apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54145539A (en) * 1978-05-04 1979-11-13 Canon Inc Electrophotographic image forming material

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54145539A (en) * 1978-05-04 1979-11-13 Canon Inc Electrophotographic image forming material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4835507A (en) * 1985-12-06 1989-05-30 Canon Kabushiki Kaisha Photosensor array for image processing apparatus

Similar Documents

Publication Publication Date Title
JPS54145539A (en) Electrophotographic image forming material
BR8305222A (en) PROCESS FOR FORMING AMORPHIC SEMICONDUCTOR ALLOYS AND DEVICE USING MICROWAVE ENERGY
JPS52140267A (en) Vapor epitaxial crystal growing device
JPS5625743A (en) Electrophotographic receptor
JPS55108780A (en) Thin film solar cell
JPS56115573A (en) Photoconductive element
JPS5662254A (en) Electrophotographic imaging material
JPS54145540A (en) Electrophotographic image forming material
JPS55166647A (en) Photoconductive composition and electrophotographic receptor using this
JPS55159445A (en) Electrophotographic receptor
JPS57158650A (en) Amorphous silicon photoconductor layer
JPS5744154A (en) Electrophotographic image formation member
JPS564150A (en) Electrophotographic receptor
JPS5692543A (en) Preparation of electrophotographic receptor
JPS57132155A (en) Photoelectric transducer
JPS5739588A (en) Solid state image pickup device
JPS5664346A (en) Electrophotographic receptor and its preparation
JPS5624356A (en) Electrophotographic receptor
JPS5614241A (en) Electrophotographic receptor
JPS558092A (en) Fine film solar cell and its production method
JPS5665142A (en) Manufacture of electrophotographic receptor
JPS5662255A (en) Electrophotographic receptor
JPS55127080A (en) Photoconductive element
JPS5271241A (en) Electrophotographic light sensitive material
JPS56153782A (en) Photoconductive thin-film for television camera tube using photosensitizer layer containing amorphous silicon