JPS5768055A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5768055A
JPS5768055A JP55144648A JP14464880A JPS5768055A JP S5768055 A JPS5768055 A JP S5768055A JP 55144648 A JP55144648 A JP 55144648A JP 14464880 A JP14464880 A JP 14464880A JP S5768055 A JPS5768055 A JP S5768055A
Authority
JP
Japan
Prior art keywords
fet1
resistor
manner
insulating substrate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55144648A
Other languages
Japanese (ja)
Inventor
Kiyoharu Kiyono
Toshio Nakazawa
Koji Ogiso
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55144648A priority Critical patent/JPS5768055A/en
Publication of JPS5768055A publication Critical patent/JPS5768055A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To simplify the manufacturing steps of a microwave semiconductor device made of FETs and to reduce the cost of the device and to shorten the manufacturing period of time by forming two positions of a strip conductor formed on an insulating substrate in a structure in which they are connected with metal and using as a resistor. CONSTITUTION:Input/output matching circuits 6, 7, an FET1 and bias circuits 2, 8 made of microstrip are arranged on an insulating substrate 10, the source of an FET1 is grounded via a resistor 3, and an amplifier is, for example, composed. This resistor 3 is composed of a strip conductor 14 formed on the substrate 10 in such a manner that the prescribed two points on the conductor 14 and shortcircuitted with a wire 11 to alter the length, thereby varying the resistance value. In this manner, the operating voltage of the FET1 is set to the prescribed value without preparation of a plurality of resistors 3 nor selection of the FET1, and the manufacturing steps can be simplified.
JP55144648A 1980-10-16 1980-10-16 Semiconductor device Pending JPS5768055A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55144648A JPS5768055A (en) 1980-10-16 1980-10-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55144648A JPS5768055A (en) 1980-10-16 1980-10-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5768055A true JPS5768055A (en) 1982-04-26

Family

ID=15366957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55144648A Pending JPS5768055A (en) 1980-10-16 1980-10-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5768055A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6332954A (en) * 1986-07-25 1988-02-12 Nec Corp Semiconductor device
US5157357A (en) * 1991-02-07 1992-10-20 Mitsubishi Denki Kabushiki Kaisha Monolithic microwave ic oscillator
US6308047B1 (en) 1996-08-05 2001-10-23 Mitsubishi Denki Kabushiki Kaisha Radio-frequency integrated circuit for a radio-frequency wireless transmitter-receiver with reduced influence by radio-frequency power leakage
EP1184965A3 (en) * 2000-08-29 2004-01-02 Matsushita Electric Industrial Co., Ltd. Voltage controlled oscillator with power amplifier
JP2016058920A (en) * 2014-09-10 2016-04-21 住友電気工業株式会社 Travelling wave amplifier

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6332954A (en) * 1986-07-25 1988-02-12 Nec Corp Semiconductor device
US5157357A (en) * 1991-02-07 1992-10-20 Mitsubishi Denki Kabushiki Kaisha Monolithic microwave ic oscillator
US6308047B1 (en) 1996-08-05 2001-10-23 Mitsubishi Denki Kabushiki Kaisha Radio-frequency integrated circuit for a radio-frequency wireless transmitter-receiver with reduced influence by radio-frequency power leakage
EP1184965A3 (en) * 2000-08-29 2004-01-02 Matsushita Electric Industrial Co., Ltd. Voltage controlled oscillator with power amplifier
JP2016058920A (en) * 2014-09-10 2016-04-21 住友電気工業株式会社 Travelling wave amplifier

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