JPS5764933A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5764933A
JPS5764933A JP14098480A JP14098480A JPS5764933A JP S5764933 A JPS5764933 A JP S5764933A JP 14098480 A JP14098480 A JP 14098480A JP 14098480 A JP14098480 A JP 14098480A JP S5764933 A JPS5764933 A JP S5764933A
Authority
JP
Japan
Prior art keywords
resist
pattern
film
wire
polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14098480A
Other languages
Japanese (ja)
Inventor
Juro Yasui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP14098480A priority Critical patent/JPS5764933A/en
Publication of JPS5764933A publication Critical patent/JPS5764933A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Abstract

PURPOSE:To prevent the disconnection and the shortcircuiting of an upper layer wire of a semiconductor device by forming a thin film pattern with a resist pattern, then removing the prescribed quantity of the side surface of the resist, etching the prescribed thickness of the exposed pattern, thereby alleviating the stepwise difference of a multilayer wiring configuration. CONSTITUTION:In the step of, for example, forming a gate polysilicon pattern of an MOSIC, a polysilicon film is selectively etched with a resist mask 5, and a gate electrode 41 and a wire 42 are formed. The side surface of the mask 5 is so removed thereafter by a method, e.g., a treatment with an O2 gas plasma (or illumination of ultraviolet rays for development) or the like that only a resist film 50 remains only on the center of the patterns 41, 42. Subsequently, the exposed patterns 41, 42 are, for example, etched and removed in the amount of approx. 1/3 of the thickness of the polysilicon film by a sputtering etching. In this manner the step coverage of the interlayer film can be improved, thereby facilitating the formation of the electrode wire formed via the interlayer film.
JP14098480A 1980-10-07 1980-10-07 Manufacture of semiconductor device Pending JPS5764933A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14098480A JPS5764933A (en) 1980-10-07 1980-10-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14098480A JPS5764933A (en) 1980-10-07 1980-10-07 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5764933A true JPS5764933A (en) 1982-04-20

Family

ID=15281419

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14098480A Pending JPS5764933A (en) 1980-10-07 1980-10-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5764933A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6395643B1 (en) * 1998-05-29 2002-05-28 Applied Materials, Inc. Gas manifold for uniform gas distribution and photochemistry

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54105476A (en) * 1978-02-06 1979-08-18 Sony Corp Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54105476A (en) * 1978-02-06 1979-08-18 Sony Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6395643B1 (en) * 1998-05-29 2002-05-28 Applied Materials, Inc. Gas manifold for uniform gas distribution and photochemistry

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