JPS6464237A - Forming method for multilayered interconnection in semiconductor device - Google Patents
Forming method for multilayered interconnection in semiconductor deviceInfo
- Publication number
- JPS6464237A JPS6464237A JP22280087A JP22280087A JPS6464237A JP S6464237 A JPS6464237 A JP S6464237A JP 22280087 A JP22280087 A JP 22280087A JP 22280087 A JP22280087 A JP 22280087A JP S6464237 A JPS6464237 A JP S6464237A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- wiring
- pattern
- inter
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
PURPOSE:To prevent leakage among wirings by patterning a second wiring layer sputtered onto an inter-layer insulating film, using a resist pattern as a mask and etching the surface of the inter-layer insulating film by O2 plasma, employing the resist pattern and a second wiring pattern as masks. CONSTITUTION:Through-holes are bored to an inter-layer insulating film 10, a second wiring layer 12 is formed through a sputtering method, and a photo- resist pattern 13 is shaped onto a second wiring pattern region. The second wiring layer 12 is etched, using the pattern 13 as a mask to shape a second wiring pattern 12a. A desired quantity of a conductive modified layer 11 shaped at the time of the formation of the second wiring layer 12 on the surface of the inter-layer insulating film 10 is removed through O2 plasma etching, employing the photo-resist pattern 13 and the second wiring pattern 12a as masks. Accordingly, the conductive modified layer 13 among wirings in the layer 13 can be gotten rid of by O2 plasma, thus preventing leakage among the wirings.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22280087A JPH0680740B2 (en) | 1987-09-03 | 1987-09-03 | Method for forming multi-layer wiring of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22280087A JPH0680740B2 (en) | 1987-09-03 | 1987-09-03 | Method for forming multi-layer wiring of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6464237A true JPS6464237A (en) | 1989-03-10 |
JPH0680740B2 JPH0680740B2 (en) | 1994-10-12 |
Family
ID=16788096
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22280087A Expired - Lifetime JPH0680740B2 (en) | 1987-09-03 | 1987-09-03 | Method for forming multi-layer wiring of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0680740B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0590426A (en) * | 1991-09-27 | 1993-04-09 | Nec Corp | Manufacture of semiconductor device |
WO2011089878A1 (en) | 2010-01-19 | 2011-07-28 | 株式会社カネカ | Curable composition |
US8872040B2 (en) | 2011-08-29 | 2014-10-28 | Fujitsu Limited | Wiring structure and manufacturing method thereof, and electronic apparatus and manufacturing method thereof |
-
1987
- 1987-09-03 JP JP22280087A patent/JPH0680740B2/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0590426A (en) * | 1991-09-27 | 1993-04-09 | Nec Corp | Manufacture of semiconductor device |
WO2011089878A1 (en) | 2010-01-19 | 2011-07-28 | 株式会社カネカ | Curable composition |
US8872040B2 (en) | 2011-08-29 | 2014-10-28 | Fujitsu Limited | Wiring structure and manufacturing method thereof, and electronic apparatus and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
JPH0680740B2 (en) | 1994-10-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |