JPS5756970A - Manufacture of insulated gate type field effect semiconductor device - Google Patents
Manufacture of insulated gate type field effect semiconductor deviceInfo
- Publication number
- JPS5756970A JPS5756970A JP55130606A JP13060680A JPS5756970A JP S5756970 A JPS5756970 A JP S5756970A JP 55130606 A JP55130606 A JP 55130606A JP 13060680 A JP13060680 A JP 13060680A JP S5756970 A JPS5756970 A JP S5756970A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxidized
- layer
- manufacture
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 238000005121 nitriding Methods 0.000 abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 2
- -1 nitrogen ions Chemical class 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To improve the yield and the reliability of an MISFET device by injecting nitrogen ions through an oxidized film on an element forming region isolated with selectively oxidized layer, and thermally nitriding it after removing the oxidized film in nitriding atmosphere to form a gate film. CONSTITUTION:An oxidized film 4(200-2,000Angstrom ) is formed on an Si substrate formed thickly with a selectively oxidized film 2, and nitrogen ions are injected in the amount of 10<15>-10<17>cm<-2> on the overall surface, thereby forming an injected layer 5. Then, the film 4 is removed. NH3 or N2 or mixture gas of NH3 or N2 is used as an atmosphere, it is heat treated at 1,000-1,200 deg.C, and the layer 5 is converted to thermally nitrided film 6. Subsequently, a polysilicon gate electrode 7 is formed, source and drain diffused layers 8, 9 are formed, and an FET having the film 6 as a gate film is prepared. In this manner, the film 6 is increased in thickness (to approx. 2,000Angstrom ) readily, and is adapted for the MISFET, thereby increasing the yeild and the reliability.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55130606A JPS5756970A (en) | 1980-09-22 | 1980-09-22 | Manufacture of insulated gate type field effect semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55130606A JPS5756970A (en) | 1980-09-22 | 1980-09-22 | Manufacture of insulated gate type field effect semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5756970A true JPS5756970A (en) | 1982-04-05 |
JPH0243340B2 JPH0243340B2 (en) | 1990-09-28 |
Family
ID=15038227
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55130606A Granted JPS5756970A (en) | 1980-09-22 | 1980-09-22 | Manufacture of insulated gate type field effect semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5756970A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6153910A (en) * | 1994-06-22 | 2000-11-28 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with nitrogen implanted channel region |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52146568A (en) * | 1976-05-31 | 1977-12-06 | Nec Corp | Production of silicon gate mos type semiconductor integrated circuit device |
JPS55110037A (en) * | 1979-02-19 | 1980-08-25 | Fujitsu Ltd | Method for making semiconductor device |
-
1980
- 1980-09-22 JP JP55130606A patent/JPS5756970A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52146568A (en) * | 1976-05-31 | 1977-12-06 | Nec Corp | Production of silicon gate mos type semiconductor integrated circuit device |
JPS55110037A (en) * | 1979-02-19 | 1980-08-25 | Fujitsu Ltd | Method for making semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6153910A (en) * | 1994-06-22 | 2000-11-28 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with nitrogen implanted channel region |
US6380036B1 (en) | 1994-06-22 | 2002-04-30 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
JPH0243340B2 (en) | 1990-09-28 |
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