JPS5756970A - Manufacture of insulated gate type field effect semiconductor device - Google Patents

Manufacture of insulated gate type field effect semiconductor device

Info

Publication number
JPS5756970A
JPS5756970A JP55130606A JP13060680A JPS5756970A JP S5756970 A JPS5756970 A JP S5756970A JP 55130606 A JP55130606 A JP 55130606A JP 13060680 A JP13060680 A JP 13060680A JP S5756970 A JPS5756970 A JP S5756970A
Authority
JP
Japan
Prior art keywords
film
oxidized
layer
manufacture
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55130606A
Other languages
Japanese (ja)
Other versions
JPH0243340B2 (en
Inventor
Fumio Kiyozumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP55130606A priority Critical patent/JPS5756970A/en
Publication of JPS5756970A publication Critical patent/JPS5756970A/en
Publication of JPH0243340B2 publication Critical patent/JPH0243340B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To improve the yield and the reliability of an MISFET device by injecting nitrogen ions through an oxidized film on an element forming region isolated with selectively oxidized layer, and thermally nitriding it after removing the oxidized film in nitriding atmosphere to form a gate film. CONSTITUTION:An oxidized film 4(200-2,000Angstrom ) is formed on an Si substrate formed thickly with a selectively oxidized film 2, and nitrogen ions are injected in the amount of 10<15>-10<17>cm<-2> on the overall surface, thereby forming an injected layer 5. Then, the film 4 is removed. NH3 or N2 or mixture gas of NH3 or N2 is used as an atmosphere, it is heat treated at 1,000-1,200 deg.C, and the layer 5 is converted to thermally nitrided film 6. Subsequently, a polysilicon gate electrode 7 is formed, source and drain diffused layers 8, 9 are formed, and an FET having the film 6 as a gate film is prepared. In this manner, the film 6 is increased in thickness (to approx. 2,000Angstrom ) readily, and is adapted for the MISFET, thereby increasing the yeild and the reliability.
JP55130606A 1980-09-22 1980-09-22 Manufacture of insulated gate type field effect semiconductor device Granted JPS5756970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55130606A JPS5756970A (en) 1980-09-22 1980-09-22 Manufacture of insulated gate type field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55130606A JPS5756970A (en) 1980-09-22 1980-09-22 Manufacture of insulated gate type field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS5756970A true JPS5756970A (en) 1982-04-05
JPH0243340B2 JPH0243340B2 (en) 1990-09-28

Family

ID=15038227

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55130606A Granted JPS5756970A (en) 1980-09-22 1980-09-22 Manufacture of insulated gate type field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5756970A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6153910A (en) * 1994-06-22 2000-11-28 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with nitrogen implanted channel region

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52146568A (en) * 1976-05-31 1977-12-06 Nec Corp Production of silicon gate mos type semiconductor integrated circuit device
JPS55110037A (en) * 1979-02-19 1980-08-25 Fujitsu Ltd Method for making semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52146568A (en) * 1976-05-31 1977-12-06 Nec Corp Production of silicon gate mos type semiconductor integrated circuit device
JPS55110037A (en) * 1979-02-19 1980-08-25 Fujitsu Ltd Method for making semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6153910A (en) * 1994-06-22 2000-11-28 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with nitrogen implanted channel region
US6380036B1 (en) 1994-06-22 2002-04-30 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
JPH0243340B2 (en) 1990-09-28

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