JPS6484639A - Al wiring and manufacture thereof - Google Patents

Al wiring and manufacture thereof

Info

Publication number
JPS6484639A
JPS6484639A JP24235487A JP24235487A JPS6484639A JP S6484639 A JPS6484639 A JP S6484639A JP 24235487 A JP24235487 A JP 24235487A JP 24235487 A JP24235487 A JP 24235487A JP S6484639 A JPS6484639 A JP S6484639A
Authority
JP
Japan
Prior art keywords
wiring
gas
nitrogen
thin film
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24235487A
Other languages
Japanese (ja)
Inventor
Kenji Kondo
Kazuo Akamatsu
Takeshi Yamauchi
Toru Yamaoka
Atsushi Komura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP24235487A priority Critical patent/JPS6484639A/en
Publication of JPS6484639A publication Critical patent/JPS6484639A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To inhibit the generation of an electromigration and to make long the longevity of an Al wiring by a method wherein nitrogen is contained in the Al wiring and the amount of this nitrogen is adjusted. CONSTITUTION:Ar gas, which is inert gas, is added in a chamber 5, which is brought in a vacuum state by a vacuum pump 6, being controlled by a mass flow controller 7 in such a way that its flow rate comes to 20cc/min. With that, N2 gas is added while its flow rate is controlled by a mass flow controller 7 in such a way as to come to 0.14-18cc/min. A high voltage is applied between a wafer holder 1 and a target 3 in a state that the amount of gas in the chamber 5 is adjusted and a reactive sputtering is performed to deposit an Al-Si-N2 thin film on the surface of a semiconductor wafer 2. This thin film is patterned by performing a photolithography process after that to form an Al wiring.
JP24235487A 1987-09-25 1987-09-25 Al wiring and manufacture thereof Pending JPS6484639A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24235487A JPS6484639A (en) 1987-09-25 1987-09-25 Al wiring and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24235487A JPS6484639A (en) 1987-09-25 1987-09-25 Al wiring and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6484639A true JPS6484639A (en) 1989-03-29

Family

ID=17087943

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24235487A Pending JPS6484639A (en) 1987-09-25 1987-09-25 Al wiring and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6484639A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0542271A2 (en) * 1991-11-15 1993-05-19 Casio Computer Company Limited Thin-film device with a compound conductive layer
JP2009006093A (en) * 2007-06-27 2009-01-15 Hisato Aramaki Bathtub-attached type bathing care assisting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0542271A2 (en) * 1991-11-15 1993-05-19 Casio Computer Company Limited Thin-film device with a compound conductive layer
EP0542271A3 (en) * 1991-11-15 1994-01-19 Casio Computer Co Ltd
JP2009006093A (en) * 2007-06-27 2009-01-15 Hisato Aramaki Bathtub-attached type bathing care assisting device

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