JPS574151A - Mos integrated circuit device - Google Patents

Mos integrated circuit device

Info

Publication number
JPS574151A
JPS574151A JP7773680A JP7773680A JPS574151A JP S574151 A JPS574151 A JP S574151A JP 7773680 A JP7773680 A JP 7773680A JP 7773680 A JP7773680 A JP 7773680A JP S574151 A JPS574151 A JP S574151A
Authority
JP
Japan
Prior art keywords
voltage
junction
area
yield
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7773680A
Other languages
Japanese (ja)
Other versions
JPS6360547B2 (en
Inventor
Riichi Uetsuki
Toshiharu Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7773680A priority Critical patent/JPS574151A/en
Publication of JPS574151A publication Critical patent/JPS574151A/en
Publication of JPS6360547B2 publication Critical patent/JPS6360547B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To provide a positive prevention of damage of insulation in all gate oxidation films by a method wherein a yield junction voltage generated among a power supply, a drain electric pole and a substrate plate is set lower than an insulating breaking voltage in the gate oxidation film. CONSTITUTION:Withstand voltage in the parasitic diode caused by p<+>n junction between a source electrode 22 or a drain electrode 23 in all MOSFET 24a, 24b connected to the power supply terminal 12 and the output terminal and Si base plate 28 of different polarity, and n<+>p junction with p area 29 is set lower than the insulative breakdown voltage. A concentration degree of impurities Nt at a high specific resistance producing yield voltage at the junction is derived separately and a concentration degree of impurities at the area of different polarity other than channel parts 26a, 26b adjacent to the electrodes 22, 23 is set as a value of Nt. As a result, a protective diode having p<+>n or n<+>p junction formed between the electric poles 23, 22 and the substrate plate 28 as well as the area 29 is operated as a constant voltage element, thus only the yield voltage of these junctions may be applied to the gate Si oxidation film of MOSFET 24a, and 24b.
JP7773680A 1980-06-11 1980-06-11 Mos integrated circuit device Granted JPS574151A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7773680A JPS574151A (en) 1980-06-11 1980-06-11 Mos integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7773680A JPS574151A (en) 1980-06-11 1980-06-11 Mos integrated circuit device

Publications (2)

Publication Number Publication Date
JPS574151A true JPS574151A (en) 1982-01-09
JPS6360547B2 JPS6360547B2 (en) 1988-11-24

Family

ID=13642186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7773680A Granted JPS574151A (en) 1980-06-11 1980-06-11 Mos integrated circuit device

Country Status (1)

Country Link
JP (1) JPS574151A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58159363A (en) * 1982-03-17 1983-09-21 Nec Corp Input/output protecting device for semiconductor integrated circuit
JPS5969957A (en) * 1982-10-15 1984-04-20 Nec Corp Protective device for output
JPS59191371A (en) * 1983-04-14 1984-10-30 Nec Corp Complementary type metal oxide semiconductor field-effect device
JPS6010767A (en) * 1983-06-30 1985-01-19 Fujitsu Ltd Semiconductor device
JPH02369A (en) * 1987-11-24 1990-01-05 Nec Corp Semiconductor device
JP2009099679A (en) * 2007-10-15 2009-05-07 Mitsumi Electric Co Ltd Mos transistor, and semiconductor integrated circuit device using the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132065A (en) * 1979-04-02 1980-10-14 Sharp Corp Cmos circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132065A (en) * 1979-04-02 1980-10-14 Sharp Corp Cmos circuit

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58159363A (en) * 1982-03-17 1983-09-21 Nec Corp Input/output protecting device for semiconductor integrated circuit
JPH0312472B2 (en) * 1982-03-17 1991-02-20 Nippon Electric Co
JPS5969957A (en) * 1982-10-15 1984-04-20 Nec Corp Protective device for output
JPS59191371A (en) * 1983-04-14 1984-10-30 Nec Corp Complementary type metal oxide semiconductor field-effect device
JPH0313754B2 (en) * 1983-04-14 1991-02-25 Nippon Electric Co
JPS6010767A (en) * 1983-06-30 1985-01-19 Fujitsu Ltd Semiconductor device
JPH0410225B2 (en) * 1983-06-30 1992-02-24
JPH02369A (en) * 1987-11-24 1990-01-05 Nec Corp Semiconductor device
JP2508826B2 (en) * 1987-11-24 1996-06-19 日本電気株式会社 Semiconductor device
JP2009099679A (en) * 2007-10-15 2009-05-07 Mitsumi Electric Co Ltd Mos transistor, and semiconductor integrated circuit device using the same

Also Published As

Publication number Publication date
JPS6360547B2 (en) 1988-11-24

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