JPS6436060A - Static electricity protective device of mis integrated circuit - Google Patents
Static electricity protective device of mis integrated circuitInfo
- Publication number
- JPS6436060A JPS6436060A JP62192828A JP19282887A JPS6436060A JP S6436060 A JPS6436060 A JP S6436060A JP 62192828 A JP62192828 A JP 62192828A JP 19282887 A JP19282887 A JP 19282887A JP S6436060 A JPS6436060 A JP S6436060A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- integrated circuit
- mis transistor
- static electricity
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To improve protection capacity of a gate insulation film and to obtain an integrated circuit of high reliability, by supplying a gate potential of a MIS transistor, which functions as a protective element for static electricity and is non-conductive on its stationary state, through a MIS transistor which is of the same conduction type and conductive on its stationary state. CONSTITUTION:Positive static electricity is applied between a terminal 51 and an earth power source, and so a high electrical field is temporarily applied between a drain and a gate of an N channel MIS transistor 1-2. Then an alternating current is made to flow through a coupling capacitor connected between the drain and the gate, and this current is released to the earth power source through an N channel MIS transistor 2-2 so that discharge is performed. The betavalues of the respective N channel MIS transistors are made to be beta1-2 and beta2-2, and the set relation is made beta2-2<=beta1-2/10 or so. Thereupon, an on resistance during discharge is made sufficiently high and so an electric field between the gate and the drain can be suppressed to be very low. The design of the resistance value is facilitated so that this integrated circuit can be manufactured with high protection capacity in its gate insulation film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62192828A JPH07101710B2 (en) | 1987-07-31 | 1987-07-31 | MIS integrated circuit electrostatic protection device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62192828A JPH07101710B2 (en) | 1987-07-31 | 1987-07-31 | MIS integrated circuit electrostatic protection device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6436060A true JPS6436060A (en) | 1989-02-07 |
JPH07101710B2 JPH07101710B2 (en) | 1995-11-01 |
Family
ID=16297654
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62192828A Expired - Lifetime JPH07101710B2 (en) | 1987-07-31 | 1987-07-31 | MIS integrated circuit electrostatic protection device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07101710B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02277265A (en) * | 1989-04-18 | 1990-11-13 | Nec Corp | Input protecting circuit for semiconductor integrated circuit |
JPH03154380A (en) * | 1989-11-10 | 1991-07-02 | Matsushita Electric Ind Co Ltd | Surge protective circuit |
US5110441A (en) * | 1989-12-14 | 1992-05-05 | Monsanto Company | Solid state ph sensor |
US5271820A (en) * | 1992-06-19 | 1993-12-21 | Monsanto Company | Solid state pH sensor |
JP4829880B2 (en) * | 2004-06-03 | 2011-12-07 | アルテラ コーポレイション | Electrostatic discharge protection circuit |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55101063U (en) * | 1978-12-30 | 1980-07-14 |
-
1987
- 1987-07-31 JP JP62192828A patent/JPH07101710B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55101063U (en) * | 1978-12-30 | 1980-07-14 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02277265A (en) * | 1989-04-18 | 1990-11-13 | Nec Corp | Input protecting circuit for semiconductor integrated circuit |
JPH03154380A (en) * | 1989-11-10 | 1991-07-02 | Matsushita Electric Ind Co Ltd | Surge protective circuit |
US5110441A (en) * | 1989-12-14 | 1992-05-05 | Monsanto Company | Solid state ph sensor |
US5271820A (en) * | 1992-06-19 | 1993-12-21 | Monsanto Company | Solid state pH sensor |
JP4829880B2 (en) * | 2004-06-03 | 2011-12-07 | アルテラ コーポレイション | Electrostatic discharge protection circuit |
Also Published As
Publication number | Publication date |
---|---|
JPH07101710B2 (en) | 1995-11-01 |
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