JPS5736874A - Semiconductor photoelectric converter - Google Patents

Semiconductor photoelectric converter

Info

Publication number
JPS5736874A
JPS5736874A JP11133880A JP11133880A JPS5736874A JP S5736874 A JPS5736874 A JP S5736874A JP 11133880 A JP11133880 A JP 11133880A JP 11133880 A JP11133880 A JP 11133880A JP S5736874 A JPS5736874 A JP S5736874A
Authority
JP
Japan
Prior art keywords
semiconductor
region
electrode
substrate
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11133880A
Other languages
Japanese (ja)
Inventor
Eiichi Yamaguchi
Takeshi Kobayashi
Yoshitaka Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP11133880A priority Critical patent/JPS5736874A/en
Publication of JPS5736874A publication Critical patent/JPS5736874A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/1443Devices controlled by radiation with at least one potential jump or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To improve the S/N ratio of a semiconductor photoelectric converter by arranging an electrode via an insulating layer on a low specific resistance semiconductor region set at the main surface side of a semiconductor substrate. CONSTITUTION:Sets of the first and second semiconductor regions 3, 4 and of the third and fourth semiconductor regions 5, 6 having low specific resistance are formed at the main surface 2 side of a semiconductor substrate 1. The first and second electrodes 11, 12 are respectively arranged via the first and second insulating layers 9, 10 on the surface of the main surface 2 side of the region between the first and the second semiconductor regions 3 and 4 and the region between the third and the fourth semiconductor regions 5 and 6 of the substrate 1. The first electrode 11 and the first layer 9 have light transmitting property, and first region 3 and the second electrode 12 are connected via a wiring layer 13 extending as an insulation of the substrate 1 between the region 3 and the electrode 12.
JP11133880A 1980-08-13 1980-08-13 Semiconductor photoelectric converter Pending JPS5736874A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11133880A JPS5736874A (en) 1980-08-13 1980-08-13 Semiconductor photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11133880A JPS5736874A (en) 1980-08-13 1980-08-13 Semiconductor photoelectric converter

Publications (1)

Publication Number Publication Date
JPS5736874A true JPS5736874A (en) 1982-02-27

Family

ID=14558658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11133880A Pending JPS5736874A (en) 1980-08-13 1980-08-13 Semiconductor photoelectric converter

Country Status (1)

Country Link
JP (1) JPS5736874A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5410690A (en) * 1977-06-24 1979-01-26 Mitsubishi Electric Corp Photo detector

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5410690A (en) * 1977-06-24 1979-01-26 Mitsubishi Electric Corp Photo detector

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