JPS5736874A - Semiconductor photoelectric converter - Google Patents
Semiconductor photoelectric converterInfo
- Publication number
- JPS5736874A JPS5736874A JP11133880A JP11133880A JPS5736874A JP S5736874 A JPS5736874 A JP S5736874A JP 11133880 A JP11133880 A JP 11133880A JP 11133880 A JP11133880 A JP 11133880A JP S5736874 A JPS5736874 A JP S5736874A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- region
- electrode
- substrate
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 9
- 239000000758 substrate Substances 0.000 abstract 4
- 238000009413 insulation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To improve the S/N ratio of a semiconductor photoelectric converter by arranging an electrode via an insulating layer on a low specific resistance semiconductor region set at the main surface side of a semiconductor substrate. CONSTITUTION:Sets of the first and second semiconductor regions 3, 4 and of the third and fourth semiconductor regions 5, 6 having low specific resistance are formed at the main surface 2 side of a semiconductor substrate 1. The first and second electrodes 11, 12 are respectively arranged via the first and second insulating layers 9, 10 on the surface of the main surface 2 side of the region between the first and the second semiconductor regions 3 and 4 and the region between the third and the fourth semiconductor regions 5 and 6 of the substrate 1. The first electrode 11 and the first layer 9 have light transmitting property, and first region 3 and the second electrode 12 are connected via a wiring layer 13 extending as an insulation of the substrate 1 between the region 3 and the electrode 12.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11133880A JPS5736874A (en) | 1980-08-13 | 1980-08-13 | Semiconductor photoelectric converter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11133880A JPS5736874A (en) | 1980-08-13 | 1980-08-13 | Semiconductor photoelectric converter |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5736874A true JPS5736874A (en) | 1982-02-27 |
Family
ID=14558658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11133880A Pending JPS5736874A (en) | 1980-08-13 | 1980-08-13 | Semiconductor photoelectric converter |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5736874A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5410690A (en) * | 1977-06-24 | 1979-01-26 | Mitsubishi Electric Corp | Photo detector |
-
1980
- 1980-08-13 JP JP11133880A patent/JPS5736874A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5410690A (en) * | 1977-06-24 | 1979-01-26 | Mitsubishi Electric Corp | Photo detector |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5710992A (en) | Semiconductor device and manufacture therefor | |
DE69132358D1 (en) | SOLAR CELL | |
UST100501I4 (en) | Integrated circuit layout utilizing separated active circuit and wiring regions | |
JPS5613777A (en) | Photoelectric converter | |
JPS5613779A (en) | Photoelectric converter and its preparation | |
HK103693A (en) | Integrated circuit with an electroconductive flat element | |
JPS5736874A (en) | Semiconductor photoelectric converter | |
JPS5394780A (en) | Manufacture of semiconductor device | |
ATE330331T1 (en) | VERTICAL IGBT WITH A SOI STRUCTURE | |
JPS57114292A (en) | Thin film image pickup element | |
JPS57106084A (en) | Amorphous silicon diode | |
JPS5430785A (en) | Manufacture of semiconductor device | |
JPS57184255A (en) | Solar cell | |
JPS6417446A (en) | Semiconductor device and manufacture thereof | |
JPS5739571A (en) | Constant current diode | |
JPS5791566A (en) | Solar battery element | |
JPS5466089A (en) | Semiconductor capacitor device | |
JPS57201050A (en) | Multilayer wiring structure | |
JPS5368970A (en) | Solder electrode structure | |
JPS53126270A (en) | Production of semiconductor devices | |
JPS5736875A (en) | Semiconductor photoelectric converter | |
JPS6419759A (en) | Semiconductor integrated circuit | |
JPS6436123A (en) | A/d converter | |
JPS56158466A (en) | Semiconductor device | |
JPS566463A (en) | Integrated resistor |