JPS5728359A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5728359A JPS5728359A JP10342180A JP10342180A JPS5728359A JP S5728359 A JPS5728359 A JP S5728359A JP 10342180 A JP10342180 A JP 10342180A JP 10342180 A JP10342180 A JP 10342180A JP S5728359 A JPS5728359 A JP S5728359A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- electrode
- metallic layer
- auzn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000926 separation method Methods 0.000 abstract 2
- 229910018885 Pt—Au Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Abstract
PURPOSE:To prevent the separation of an ohmic electrode by forming a first metallic layer ohmically contacting with the surface of a semiconcuctor substrate or a semiconductor layer and by providing a second metallic layer on the first metallic layer and around the circumference of the first layer. CONSTITUTION:On an Si or compound semiconductor substrate 14, an SiO2 film 15 and an opening 16 are formed. Then, a metallic layer 17 of, for example, AuZn or AuSn etc is evaporatd on the substrae. Next, the metallic layer 17 is etched to form an electrode 17a and then Ti, Pt, Au are evaporated successively to obtain a metal covered layer 18. For example, in a semiconductor laser formed by depositing epitaxial layers 6-9 on an N type 1nP substrate 5, and AuZn electrode 11 is provided on a Zn-diffused layer 10 and the substrate back face, and then a Ti-Pt-Au layer 13 is formed on the substrate top face, obtaining an ohmic electrode. The stickness of the Ti layers on the electrodes 11, 17a is highly improved, so that almost no separation occurs on the electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10342180A JPS5728359A (en) | 1980-07-28 | 1980-07-28 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10342180A JPS5728359A (en) | 1980-07-28 | 1980-07-28 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5728359A true JPS5728359A (en) | 1982-02-16 |
Family
ID=14353567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10342180A Pending JPS5728359A (en) | 1980-07-28 | 1980-07-28 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5728359A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4695869A (en) * | 1983-05-31 | 1987-09-22 | Kabushiki Kaisha Toshiba | GAAS semiconductor device |
| JP2012123184A (en) * | 2010-12-08 | 2012-06-28 | Sumitomo Electric Ind Ltd | Semiconductor optical modulation element and method for manufacturing the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53110465A (en) * | 1977-03-09 | 1978-09-27 | Nec Corp | Semiconductor device |
-
1980
- 1980-07-28 JP JP10342180A patent/JPS5728359A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53110465A (en) * | 1977-03-09 | 1978-09-27 | Nec Corp | Semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4695869A (en) * | 1983-05-31 | 1987-09-22 | Kabushiki Kaisha Toshiba | GAAS semiconductor device |
| JP2012123184A (en) * | 2010-12-08 | 2012-06-28 | Sumitomo Electric Ind Ltd | Semiconductor optical modulation element and method for manufacturing the same |
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