JPS5575276A - 3[5 group compound semiconductor device - Google Patents

3[5 group compound semiconductor device

Info

Publication number
JPS5575276A
JPS5575276A JP14926378A JP14926378A JPS5575276A JP S5575276 A JPS5575276 A JP S5575276A JP 14926378 A JP14926378 A JP 14926378A JP 14926378 A JP14926378 A JP 14926378A JP S5575276 A JPS5575276 A JP S5575276A
Authority
JP
Japan
Prior art keywords
layer
electrode layer
aluminum
evaporated
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14926378A
Other languages
Japanese (ja)
Inventor
Katsumi Tsujii
Yoshinobu Asai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP14926378A priority Critical patent/JPS5575276A/en
Publication of JPS5575276A publication Critical patent/JPS5575276A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/05139—Silver [Ag] as principal constituent
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Abstract

PURPOSE: To maintain a good wiring bonding property, by providing a barrier metal layer between a surface aluminum layer and an electrode layer for ohmic contact with a crystal substrate to prevent mutual diffusion between the surface aluminum layer and the electrode layer.
CONSTITUTION: An Ag-Be alloy is evaporated on the surface of a p-layer 9 of a Gap substrate. Silver is then evaporated on the alloy, thereby providing an electrode layer 11. Titanium is evaporated as an electrode layer 12 on the former 11. Aluminum is then evaporated as a surface electrode layer 13. An electrode consisting of the layers 11∼13 is photoetched to a desired pattern. As a result, the electrode layer 12 serves as a barrier metal layer between the electrode layer 11 and the aluminum layer 13 to prevent mutual diffusion between them. The aluminum on the surface of the electrode is prevented from being denatured due to heat treatment for obtaining ohmic contact. Therefore, a good bonding property is maintained.
COPYRIGHT: (C)1980,JPO&Japio
JP14926378A 1978-12-02 1978-12-02 3[5 group compound semiconductor device Pending JPS5575276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14926378A JPS5575276A (en) 1978-12-02 1978-12-02 3[5 group compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14926378A JPS5575276A (en) 1978-12-02 1978-12-02 3[5 group compound semiconductor device

Publications (1)

Publication Number Publication Date
JPS5575276A true JPS5575276A (en) 1980-06-06

Family

ID=15471412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14926378A Pending JPS5575276A (en) 1978-12-02 1978-12-02 3[5 group compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS5575276A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117283A (en) * 1981-01-13 1982-07-21 Sharp Corp 3-5 group compound semiconductor device
JPS57117284A (en) * 1981-01-13 1982-07-21 Sharp Corp 3-5 group compound semiconductor device
JPS62162327A (en) * 1985-12-23 1987-07-18 Sharp Corp Electrode forming method for iii-v compound semiconductor element

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117283A (en) * 1981-01-13 1982-07-21 Sharp Corp 3-5 group compound semiconductor device
JPS57117284A (en) * 1981-01-13 1982-07-21 Sharp Corp 3-5 group compound semiconductor device
JPS6244836B2 (en) * 1981-01-13 1987-09-22 Sharp Kk
JPS6244837B2 (en) * 1981-01-13 1987-09-22 Sharp Kk
JPS62162327A (en) * 1985-12-23 1987-07-18 Sharp Corp Electrode forming method for iii-v compound semiconductor element

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