JPS5724539A - Formation of pattern - Google Patents

Formation of pattern

Info

Publication number
JPS5724539A
JPS5724539A JP10019180A JP10019180A JPS5724539A JP S5724539 A JPS5724539 A JP S5724539A JP 10019180 A JP10019180 A JP 10019180A JP 10019180 A JP10019180 A JP 10019180A JP S5724539 A JPS5724539 A JP S5724539A
Authority
JP
Japan
Prior art keywords
film
photoresist
photoresist film
ultraviolet rays
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10019180A
Other languages
Japanese (ja)
Inventor
Tadahiro Hashimoto
Tsutomu Tashiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10019180A priority Critical patent/JPS5724539A/en
Publication of JPS5724539A publication Critical patent/JPS5724539A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To provide mutlilayer wiring easily by a method wherein a substrate provided with an oxide film is covered with a photoresist film, exposed to ultraviolet rays, again covered with a second photoresist film, and then exposed to a large amont of ultraviolet rays via a mask to form a T-shaped photoresist film. CONSTITUTION:A silicon dioxide film 2 is provided on an Si substrate 1 and a photoresist film 3 which is 1mum thick as a first layer is placed on the film 2. 3,500Angstrom or less of ultraviolet rays are sent onto the photoresist film 3. Next a photoresist film 4 which is 1mum thick as a second photoresist layer is placed on the film 3 and 3,500Angstrom or less of ultraviolet rays in great quantities are sent onto the photoresist films 3, 4 duplicatedly placed via a mask 5. The cross section of these photoresist films after development shows a T shape. An Al wiring film 6 is attached to the photoresist film by means of evaporation. Due to the T-shaped cross section of the photoresist films, the cross sectional configuration for metal wiring after lift-off can be adjusted, thus making it easier to provide multi-layer wiring without discontinuance between layers.
JP10019180A 1980-07-22 1980-07-22 Formation of pattern Pending JPS5724539A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10019180A JPS5724539A (en) 1980-07-22 1980-07-22 Formation of pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10019180A JPS5724539A (en) 1980-07-22 1980-07-22 Formation of pattern

Publications (1)

Publication Number Publication Date
JPS5724539A true JPS5724539A (en) 1982-02-09

Family

ID=14267403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10019180A Pending JPS5724539A (en) 1980-07-22 1980-07-22 Formation of pattern

Country Status (1)

Country Link
JP (1) JPS5724539A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005268441A (en) * 2004-03-17 2005-09-29 Seiko Epson Corp Method for manufacturing semiconductor film, method for manufacturing semiconductor device, integrated circuit, electric optical device and electronic equipment
JP2007194641A (en) * 2006-01-20 2007-08-02 Palo Alto Research Center Inc Electronic device manufacturing process

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005268441A (en) * 2004-03-17 2005-09-29 Seiko Epson Corp Method for manufacturing semiconductor film, method for manufacturing semiconductor device, integrated circuit, electric optical device and electronic equipment
JP4711042B2 (en) * 2004-03-17 2011-06-29 セイコーエプソン株式会社 Semiconductor film manufacturing method and semiconductor device manufacturing method
JP2007194641A (en) * 2006-01-20 2007-08-02 Palo Alto Research Center Inc Electronic device manufacturing process

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