JPS5527637A - Photo-resist-pattern forming method - Google Patents

Photo-resist-pattern forming method

Info

Publication number
JPS5527637A
JPS5527637A JP10066478A JP10066478A JPS5527637A JP S5527637 A JPS5527637 A JP S5527637A JP 10066478 A JP10066478 A JP 10066478A JP 10066478 A JP10066478 A JP 10066478A JP S5527637 A JPS5527637 A JP S5527637A
Authority
JP
Japan
Prior art keywords
photo
film
resist
wiring layer
fine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10066478A
Other languages
Japanese (ja)
Inventor
Yoshio Takahashi
Tomio Kume
Junzo Toda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10066478A priority Critical patent/JPS5527637A/en
Publication of JPS5527637A publication Critical patent/JPS5527637A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE: To remarkably improve fine pattern forming precision by operating a double exposure process consisting of No.1 and No.2 exposure, in forming a photo- resist pattern on high level surfaces on a base having high level differences.
CONSTITUTION: Aluminum wiring layer 3 is formed on the upper surface of silicon oxide insulating film 4, which is provided on the surface of permalloy thin film layer 2. On top of this is formed silicon oxide insulating film 5. When a negative photo- resist is coated on this by a spinner, thick photo-resist film 6 is formed on the surface of film 4 and thin photo-resist film 6' is formed on the upper surface of wiring layer 3. By covering the upper surface of wiring layer 3 with photo-mask, other regions are exposed by taking a sufficient time to expose film 6. A proper second- stage exposure is operated on film 6 by using fine photo-mask, and thereby a fine photo-resist pattern is obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP10066478A 1978-08-18 1978-08-18 Photo-resist-pattern forming method Pending JPS5527637A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10066478A JPS5527637A (en) 1978-08-18 1978-08-18 Photo-resist-pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10066478A JPS5527637A (en) 1978-08-18 1978-08-18 Photo-resist-pattern forming method

Publications (1)

Publication Number Publication Date
JPS5527637A true JPS5527637A (en) 1980-02-27

Family

ID=14280051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10066478A Pending JPS5527637A (en) 1978-08-18 1978-08-18 Photo-resist-pattern forming method

Country Status (1)

Country Link
JP (1) JPS5527637A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54116201A (en) * 1978-03-02 1979-09-10 Hitachi Ltd Electroplating apparatus of magnetic discs

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54116201A (en) * 1978-03-02 1979-09-10 Hitachi Ltd Electroplating apparatus of magnetic discs

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