JPS5617026A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5617026A JPS5617026A JP9360379A JP9360379A JPS5617026A JP S5617026 A JPS5617026 A JP S5617026A JP 9360379 A JP9360379 A JP 9360379A JP 9360379 A JP9360379 A JP 9360379A JP S5617026 A JPS5617026 A JP S5617026A
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor device
- smooth
- substrate
- implanted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000010884 ion-beam technique Methods 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To prevent disconnection of a wire in a semiconductor device by irradiating P ion beam to the surface of an oxide film to thereby smooth the surface of the film at low temperature without increasing the P density of the oxide film. CONSTITUTION:A source 2 and a drain 3 are formed in an Si substrate 1, and a gate electrode 5 is formed on the SiO2 film 4. After forming an SiO2 film 6 at approx. 450 deg.C by the reaction of SiH4+O2, P ion beam 8 is irradiated thereto to raise the surface temperature only so as to smooth the surface thereof. Since the accelerating voltage is low in this case, the ions are not implanted to the substrate 1, the P ion is implanted slightly into the film 6 to form a PSG so as to lower the melting point thereof. Since this configuration can eliminate the step of flattening the surface at high temperature, it can remarkably improve the reliability of the semiconductor device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9360379A JPS5617026A (en) | 1979-07-20 | 1979-07-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9360379A JPS5617026A (en) | 1979-07-20 | 1979-07-20 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5617026A true JPS5617026A (en) | 1981-02-18 |
Family
ID=14086894
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9360379A Pending JPS5617026A (en) | 1979-07-20 | 1979-07-20 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5617026A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007324573A (en) * | 2006-05-30 | 2007-12-13 | Sharp Corp | Compound semiconductor-on-silicon wafer with thermally softened insulator |
US7696671B2 (en) | 2004-10-15 | 2010-04-13 | Olympus Medical Systems Corporation | Array ultrasonic transducer having piezoelectric devices |
-
1979
- 1979-07-20 JP JP9360379A patent/JPS5617026A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7696671B2 (en) | 2004-10-15 | 2010-04-13 | Olympus Medical Systems Corporation | Array ultrasonic transducer having piezoelectric devices |
JP2007324573A (en) * | 2006-05-30 | 2007-12-13 | Sharp Corp | Compound semiconductor-on-silicon wafer with thermally softened insulator |
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