JPS56115563A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56115563A JPS56115563A JP1797180A JP1797180A JPS56115563A JP S56115563 A JPS56115563 A JP S56115563A JP 1797180 A JP1797180 A JP 1797180A JP 1797180 A JP1797180 A JP 1797180A JP S56115563 A JPS56115563 A JP S56115563A
- Authority
- JP
- Japan
- Prior art keywords
- regions
- base
- becoming
- high resistance
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000000463 material Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain relatively high resistance between the emitter and the base of the semiconductor device forming a Darlington transistor by diffusing both the base regions so as to be superposed one another. CONSTITUTION:P type diffused layers 2, 3 becoming base regions are so formed on a semiconductor substrate 1 formed of N type silicon becoming a collector region that a part is superposed along a main surface, and N type diffused layers 4, 13 becoming emitter regions are formed on the regions 2, 3. In the Darlington structure formed of transistors T1, T2, the part having low density in the lateral expansion of the diffused layer is used as a resistance to efficiently obtain high resistance, and it is not necessary to isolate the base region to obtain high resistance. Thus, the chip size can be reduced to save the semiconductor material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1797180A JPS56115563A (en) | 1980-02-15 | 1980-02-15 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1797180A JPS56115563A (en) | 1980-02-15 | 1980-02-15 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56115563A true JPS56115563A (en) | 1981-09-10 |
Family
ID=11958609
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1797180A Pending JPS56115563A (en) | 1980-02-15 | 1980-02-15 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56115563A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61206260A (en) * | 1985-03-11 | 1986-09-12 | Shindengen Electric Mfg Co Ltd | High withstanding-voltage planar type semiconductor device |
-
1980
- 1980-02-15 JP JP1797180A patent/JPS56115563A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61206260A (en) * | 1985-03-11 | 1986-09-12 | Shindengen Electric Mfg Co Ltd | High withstanding-voltage planar type semiconductor device |
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