JPS56115563A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56115563A
JPS56115563A JP1797180A JP1797180A JPS56115563A JP S56115563 A JPS56115563 A JP S56115563A JP 1797180 A JP1797180 A JP 1797180A JP 1797180 A JP1797180 A JP 1797180A JP S56115563 A JPS56115563 A JP S56115563A
Authority
JP
Japan
Prior art keywords
regions
base
becoming
high resistance
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1797180A
Other languages
Japanese (ja)
Inventor
Masami Yamaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP1797180A priority Critical patent/JPS56115563A/en
Publication of JPS56115563A publication Critical patent/JPS56115563A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain relatively high resistance between the emitter and the base of the semiconductor device forming a Darlington transistor by diffusing both the base regions so as to be superposed one another. CONSTITUTION:P type diffused layers 2, 3 becoming base regions are so formed on a semiconductor substrate 1 formed of N type silicon becoming a collector region that a part is superposed along a main surface, and N type diffused layers 4, 13 becoming emitter regions are formed on the regions 2, 3. In the Darlington structure formed of transistors T1, T2, the part having low density in the lateral expansion of the diffused layer is used as a resistance to efficiently obtain high resistance, and it is not necessary to isolate the base region to obtain high resistance. Thus, the chip size can be reduced to save the semiconductor material.
JP1797180A 1980-02-15 1980-02-15 Semiconductor device Pending JPS56115563A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1797180A JPS56115563A (en) 1980-02-15 1980-02-15 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1797180A JPS56115563A (en) 1980-02-15 1980-02-15 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56115563A true JPS56115563A (en) 1981-09-10

Family

ID=11958609

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1797180A Pending JPS56115563A (en) 1980-02-15 1980-02-15 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56115563A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61206260A (en) * 1985-03-11 1986-09-12 Shindengen Electric Mfg Co Ltd High withstanding-voltage planar type semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61206260A (en) * 1985-03-11 1986-09-12 Shindengen Electric Mfg Co Ltd High withstanding-voltage planar type semiconductor device

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