JPS57210657A - Array substrate for display device - Google Patents
Array substrate for display deviceInfo
- Publication number
- JPS57210657A JPS57210657A JP56093756A JP9375681A JPS57210657A JP S57210657 A JPS57210657 A JP S57210657A JP 56093756 A JP56093756 A JP 56093756A JP 9375681 A JP9375681 A JP 9375681A JP S57210657 A JPS57210657 A JP S57210657A
- Authority
- JP
- Japan
- Prior art keywords
- array
- display device
- substrate
- capacitor
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
Abstract
PURPOSE:To reduce the defects of an array for a display device by forming a capacitor and switching transistor array in a semiconductor layer formed through an insulating film on an Si single crystal substrate and forming an array driving circuit section in the substrate. CONSTITUTION:An insulative film 32 made of a silicon nitride or the like is formed on an Si single crystal substrate 31, an array of switching transistors 34 using an amorphous silicon layer 33 and capacitor 35 to be controlled by the transistor is formed on the film, a circuit 37 for driving the array is formed in the substrate 31, and a picture element array and an array driving circuit are integrated. In this manner, an array for a display device having less defects such as defect of wire of integrated drive circuit can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56093756A JPS57210657A (en) | 1981-06-19 | 1981-06-19 | Array substrate for display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56093756A JPS57210657A (en) | 1981-06-19 | 1981-06-19 | Array substrate for display device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57210657A true JPS57210657A (en) | 1982-12-24 |
Family
ID=14091269
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56093756A Pending JPS57210657A (en) | 1981-06-19 | 1981-06-19 | Array substrate for display device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57210657A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63101829A (en) * | 1986-10-17 | 1988-05-06 | Nec Corp | Active matrix liquid crystal display device and its production |
US5386382A (en) * | 1992-01-06 | 1995-01-31 | Samsung Electronics Co., Ltd. | Semiconductor memory device and a manufacturing method thereof |
JPH08190106A (en) * | 1995-01-10 | 1996-07-23 | Victor Co Of Japan Ltd | Active matrix device and its driving method |
-
1981
- 1981-06-19 JP JP56093756A patent/JPS57210657A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63101829A (en) * | 1986-10-17 | 1988-05-06 | Nec Corp | Active matrix liquid crystal display device and its production |
JPH0567208B2 (en) * | 1986-10-17 | 1993-09-24 | Nippon Electric Co | |
US5386382A (en) * | 1992-01-06 | 1995-01-31 | Samsung Electronics Co., Ltd. | Semiconductor memory device and a manufacturing method thereof |
JPH08190106A (en) * | 1995-01-10 | 1996-07-23 | Victor Co Of Japan Ltd | Active matrix device and its driving method |
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