JPS52119172A - Forming method of fine pattern - Google Patents

Forming method of fine pattern

Info

Publication number
JPS52119172A
JPS52119172A JP3646476A JP3646476A JPS52119172A JP S52119172 A JPS52119172 A JP S52119172A JP 3646476 A JP3646476 A JP 3646476A JP 3646476 A JP3646476 A JP 3646476A JP S52119172 A JPS52119172 A JP S52119172A
Authority
JP
Japan
Prior art keywords
forming method
fine pattern
resist layer
type resist
negativetype
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3646476A
Other languages
Japanese (ja)
Other versions
JPS5819127B2 (en
Inventor
Kenichi Kawashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP51036464A priority Critical patent/JPS5819127B2/en
Publication of JPS52119172A publication Critical patent/JPS52119172A/en
Publication of JPS5819127B2 publication Critical patent/JPS5819127B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE: To obtain the fime negative-type resist pattern by coating the negativetype resist layer, the metal film and the positive type resist layer on the semiconductor substrate in sequence and by applying the electron beam or the Xray and by performing the etching process in these order.
COPYRIGHT: (C)1977,JPO&Japio
JP51036464A 1976-03-31 1976-03-31 Fine pattern formation method Expired JPS5819127B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51036464A JPS5819127B2 (en) 1976-03-31 1976-03-31 Fine pattern formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51036464A JPS5819127B2 (en) 1976-03-31 1976-03-31 Fine pattern formation method

Publications (2)

Publication Number Publication Date
JPS52119172A true JPS52119172A (en) 1977-10-06
JPS5819127B2 JPS5819127B2 (en) 1983-04-16

Family

ID=12470523

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51036464A Expired JPS5819127B2 (en) 1976-03-31 1976-03-31 Fine pattern formation method

Country Status (1)

Country Link
JP (1) JPS5819127B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54118175A (en) * 1978-02-22 1979-09-13 Ibm Method of exposing radiation sensitive layer with xxray
JPS55153191A (en) * 1979-05-17 1980-11-28 Nec Corp Manufacture of cylindrical magnetic-domain element
JPS5672847U (en) * 1979-11-09 1981-06-15
JPS5679428A (en) * 1979-12-03 1981-06-30 Hitachi Ltd Working of ultra-fine article
JPS5694351A (en) * 1979-12-26 1981-07-30 Perkin Elmer Corp Mask for xxray lithograph and production thereof
JPS57172736A (en) * 1981-03-30 1982-10-23 Yokogawa Hewlett Packard Ltd Multilayer photoresist processing
JPS6122625A (en) * 1984-07-10 1986-01-31 Toshiba Corp Pattern forming method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61203227A (en) * 1985-03-07 1986-09-09 Nippon Steel Corp Mounting and demounting of shaft

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54118175A (en) * 1978-02-22 1979-09-13 Ibm Method of exposing radiation sensitive layer with xxray
JPS588129B2 (en) * 1978-02-22 1983-02-14 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション How to expose the radiation-sensitive layer to X-rays
JPS55153191A (en) * 1979-05-17 1980-11-28 Nec Corp Manufacture of cylindrical magnetic-domain element
JPS5672847U (en) * 1979-11-09 1981-06-15
JPS5679428A (en) * 1979-12-03 1981-06-30 Hitachi Ltd Working of ultra-fine article
JPS5694351A (en) * 1979-12-26 1981-07-30 Perkin Elmer Corp Mask for xxray lithograph and production thereof
JPH0142134B2 (en) * 1979-12-26 1989-09-11 Perkin Elmer Corp
JPS57172736A (en) * 1981-03-30 1982-10-23 Yokogawa Hewlett Packard Ltd Multilayer photoresist processing
JPS6122625A (en) * 1984-07-10 1986-01-31 Toshiba Corp Pattern forming method

Also Published As

Publication number Publication date
JPS5819127B2 (en) 1983-04-16

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