JPS57204169A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57204169A JPS57204169A JP8903981A JP8903981A JPS57204169A JP S57204169 A JPS57204169 A JP S57204169A JP 8903981 A JP8903981 A JP 8903981A JP 8903981 A JP8903981 A JP 8903981A JP S57204169 A JPS57204169 A JP S57204169A
- Authority
- JP
- Japan
- Prior art keywords
- metallic silicide
- superposing
- oxide film
- amorphous
- enhance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 229910021332 silicide Inorganic materials 0.000 abstract 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 6
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To enhance qulaity of the device, by providing an electrode wiring for superposing on a gate electrode constituted of a metallic silicide covered with an oxide film over the surface at the both ends thereof on an insulating substrate to adhere an amorphous Si layer on the metallic silicide. CONSTITUTION:The high melting point metallic silicide 15 is adhered on an insulating substrate selectively to form an Si oxide film 1 16 on the metallic silicide. The source and drain electrodes 7, 8 are selectively adhered for superposing at the both ends of the metallic silicide. Then, an amorphous Si layer is formed on the metallic silicide for superposing on the source and drain electrodes to obtain a MOS FET. Thus, a gate oxide film without pin holes which is thin and not easy to contaminate is formed to enhance the quality.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8903981A JPS57204169A (en) | 1981-06-10 | 1981-06-10 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8903981A JPS57204169A (en) | 1981-06-10 | 1981-06-10 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57204169A true JPS57204169A (en) | 1982-12-14 |
Family
ID=13959746
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8903981A Pending JPS57204169A (en) | 1981-06-10 | 1981-06-10 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57204169A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0738118A (en) * | 1992-12-22 | 1995-02-07 | Korea Electron Telecommun | Manufacture of thin film transistor |
-
1981
- 1981-06-10 JP JP8903981A patent/JPS57204169A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0738118A (en) * | 1992-12-22 | 1995-02-07 | Korea Electron Telecommun | Manufacture of thin film transistor |
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