JPS57202735A - Manufacture of integrated circuit device - Google Patents

Manufacture of integrated circuit device

Info

Publication number
JPS57202735A
JPS57202735A JP8866481A JP8866481A JPS57202735A JP S57202735 A JPS57202735 A JP S57202735A JP 8866481 A JP8866481 A JP 8866481A JP 8866481 A JP8866481 A JP 8866481A JP S57202735 A JPS57202735 A JP S57202735A
Authority
JP
Japan
Prior art keywords
etching
slope
resist
wiring
degrees
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8866481A
Other languages
Japanese (ja)
Inventor
Shigeru Murakami
Osamu Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8866481A priority Critical patent/JPS57202735A/en
Publication of JPS57202735A publication Critical patent/JPS57202735A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To provide a slope at the side of a hole by a method wherein photo etching is applied to a layer insulating film for opening and then the resist is removed and ion beam etching is applied to the whole surface. CONSTITUTION:In ion beam etching, fast etching speed is provided to have a peak when the angle between a beam axis and etched surface forms between 0 degree and 90 degrees. Photo etching is applied by using a photoresist 105 and after applying two-stage etching of isotropy and anisotropy to Si3N4104, the resist 105 is removed and Ar ion beams are vertically aimed and the removal of etching is applied to about 1/5 of film thickness. As a result, the end fringe of the opening is provided with a slope of about 40 degrees. At that time, the level difference C of the Al wiring 103 at a lower layer has a gentle slope like parts A, B and the Al wiring 106 at an upper layer will have no disconnection.
JP8866481A 1981-06-09 1981-06-09 Manufacture of integrated circuit device Pending JPS57202735A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8866481A JPS57202735A (en) 1981-06-09 1981-06-09 Manufacture of integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8866481A JPS57202735A (en) 1981-06-09 1981-06-09 Manufacture of integrated circuit device

Publications (1)

Publication Number Publication Date
JPS57202735A true JPS57202735A (en) 1982-12-11

Family

ID=13949083

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8866481A Pending JPS57202735A (en) 1981-06-09 1981-06-09 Manufacture of integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57202735A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6113629A (en) * 1984-06-28 1986-01-21 Yamagata Nippon Denki Kk Manufacture of semiconductor device
JPH01125882A (en) * 1987-08-21 1989-05-18 Nippon Denso Co Ltd Magnetism detector
JPH05182932A (en) * 1992-06-15 1993-07-23 Hitachi Ltd Micro-ion beam processing method
JP2008249124A (en) * 2007-03-30 2008-10-16 Toyoda Gosei Co Ltd Piston ring

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6113629A (en) * 1984-06-28 1986-01-21 Yamagata Nippon Denki Kk Manufacture of semiconductor device
JPH01125882A (en) * 1987-08-21 1989-05-18 Nippon Denso Co Ltd Magnetism detector
JPH05182932A (en) * 1992-06-15 1993-07-23 Hitachi Ltd Micro-ion beam processing method
JP2008249124A (en) * 2007-03-30 2008-10-16 Toyoda Gosei Co Ltd Piston ring

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